Enhanced magnetic properties of Nd–Fe–B thin films crystallized by heat treatment

Nd₂Fe₁₄B Φ phase crystallites were formed in Nd_16.7Fe_65.5B_17.8 thin films prepared by RF sputtering with subsequent heat treatment. The 2 μm-thick films were deposited onto 0.1 mm Mo sheets at an average substrate temperature (T_s) of 365°C. The enhanced magnetic properties of the magnetically anisotropic thin films were investigated using different heating rates (h_r) of 10°C, 20°C, 50°C and 100°C/min in an annealing experiment. Transformation from the amorphous phase to the crystalline phase is clearly manifested by the formation of fine crystallites embedded as a columnar matrix of Nd₂Fe₁₄B phase. High-resolution scanning electron microscope data of the cross-section of the annealed films show columnar stacking of Nd₂Fe₁₄B crystallites with sizes <500 nm. Transmission electron microscope observations revealed that the microstructure of these films having out-of-plane magnetization consists of uniformly distributed Φ phase with grain size around 400 nm together with small Nd rich particles. This grain size of Φ phase is comparable to the single domain particle diameter of Nd₂Fe₁₄B. Significant change in _iH_c, 4πM_r and 4πM_s with h_r was confirmed. Annealing conditions with a heating rate of 50°C/min to an annealing temperature (T_a) of 650°C for 30 min was consequently found to give optimum properties for the NdFeB thin films. The resulting magnetic properties, considered to be the effect of varying h_r were _iH_c= 1307–1357 kA/m, 4πM_r=0.78–1.06 T and 4πM_s=0.81–1.07 T.     

Superconductivity and pseudogap states studied by microwave conductivity measurements of λ-(BEDT-TSF)2GaCl4

We have investigated the microwave response at 45 GHz in an organic superconductor λ-(BEDT-TSF)₂GaCl₄ with T_c = 4.8 K. We determine the μ₀H_c2–T phase diagram from microwave loss and find that the superconducting state is in the pure limit (l/ξ_GL  10). Although the real part of the complex conductivity (=σ₁ + iσ₂) does not show a coherence peak just below T_c, the London penetration depth completely saturates at low temperatures down to T/T_c = 0.2, which may provide an evidence for a conventional s-wave pairing. In the metallic state below about 50 K, (parallel to the c-axis) deviates downward from , while σ₂, which should be zero in a conventional metal, increases exponentially toward T_c. In spite of the fact that the Hagen–Rubens limit is well satisfied as far as the dc conductivity is concerned, a Drude model is unable to explain the large positive σ₂. In order to explain such anomalies in the metallic state, we propose a possible existence of so-called a pseudogap near a Fermi level. The anomalous increase of the positive σ₂ may be attributed to an appearance of pre-formed electron pairs in the pseudogap state. This appearance can be regarded as a precursor to the superconducting transition. Such a precursory phenomenon has been observed also in the isostructural FeCl₄ salt with the anomalous metallic states, which shows a negative σ₂ in contrast to the GaCl₄ salt. Just the opposite of ground states in between the GaCl₄ and FeCl₄ salts may result in the contrasting anomalous metallic states with different precursory phenomena with opposite signs of σ₂.     

Observation of unrecoverable domains in two-dimensional-arrayed Pr0.5Ca0.5MnO3−y junctions

Two-dimensional-arrayed 14×14 sandwich-type junctions of Au–Pr_1−xCa_xMnO_3−y (PCMO, x=0.5)–SrRuO₃ were fabricated on SrTiO₃ (0 0 1) substrates. The resistivity–voltage (ρ–V) characteristics of each junction was measured by a two-probe method. The junctions that return to the insulating state after removing the voltage (recoverable) and the ones that remain metallic (unrecoverable) were found to co-exist in one PCMO film. The variation in the lattice constant of the PCMO film, rather than the variation of the composition, is thought to be related to the separation of recoverable–unrecoverable domains. Among several samples with a PCMO layer fabricated under various conditions, the junctions with thin PCMO layers deposited at low temperature showed a pronounced hysteresis in their ρ–V characteristics. The clear hysteresis and good crystallinity of PCMO films were correlated.     

The order of magnetic phase transition in La(Fe1−xCox)11.4Si1.6 compounds

Magnetic transitions in La(Fe_1−xCo_x)_11.4Si_1.6 compounds with x=0–0.08, have been studied by DC magnetic measurements and Mössbauer spectroscopy. The temperature dependence of the Landau coefficients has been derived by fitting the magnetization, M(μ₀H), using the Landau expansion of the magnetic free energy. For x0.02 there is a strongly first-order magnetic phase transition between ferromagnetic and paramagnetic (F–P) states in zero external field and a metamagnetic transition from paramagnetic to ferromagnetic (P–F) above T_c. Increasing the cobalt content drives the F–P transition towards second order and eliminates the metamagnetic transition.     

Anisotropic dielectric properties of PbYb1/2Ta1/2O3 single crystals

PbYb_1/2Ta_1/2O₃ single crystals were obtained for the first time. They were grown by the flux method. The PbOPbF₂B₂O₃ system was used as a solvent. Dielectric investigations were carried out in 1 0 0_c, 1 1 0_c and 1 1 1_c pseudocubic directions. These studies pointed to anisotropy of dielectric properties. Frequency-independent ε′(T) and ε″(T) maxima related to the antiferroelectric–paraelectric (AFE—PE) phase transition are observed for all directions at 562 K. The frequency-dependent ε′(T) and ε″(T) maxima near 400 K related to the ferroelectric (FE)–AFE phase transition are observed only in 1 1 1_c direction. The hysteresis loops were observed in this direction only. These results point that ferroelectric relaxor properties appear only in 1 1 1_c direction. We propose to consider the ferroelectric phase as ferrielectric one.     

Structural study and magnetoresistance effect of epitaxial La0.67Sr0.33MnO3–δ and Pr0.7Ca0.3MnO3−δ multilayer films

La_0.67Sr_0.33MnO_3−δ (LSMO) and Pr_0.7Ca_0.3MnO_3−δ (PCMO) multilayer epitaxial films, which were fabricated with different LSMO and PCMO layer thickness on LaAlO₃ single crystal substrates of (0 0 1) orientation by a direct current magnetron sputtering technique, were studied further, after the structure, magnetoresistance effect and magnetic properties of LSMO/PCMO/LSMO (LPL) trilayer epitaxial films were systemically studied. The superlattice structures of multilayer films were observed according to the diffraction peaks of X-ray diffraction patterns at small angles. The metal–insulator transition temperature (T_P) and peak resistivity (ρ_max) obviously changed when we altered the thickness of PCMO middle layer and the intra-field related with the thickness of those layers and their interaction. Considering the effect of the distribution of electrical field and current, and the interaction among the layers of LSMO and PCMO, an effective fact n* was introduced to replace n (the number of layer). All the calculated values of ρ (the resistivity of multilayer films) accorded with the experimental values.     

Magnetic properties of the Bi1.95Sr2.05−xLaxCuOy (Bi-2201) superconducting phase

We have investigated the reversible mixed-state magnetization M of three lanthanum substituted Bi_1.95Sr_2.05−xLa_xCuO_y (Bi-2201) ceramic samples having different critical temperatures T_c ranging from 20.0 to 35.5 K. As for the Bi₂Sr₂CaCu₂O_8+δ (Bi-2212) phase, we found that anisotropy of Bi-2201 is large. A manifestation of this anisotropy is the field independent magnetization M^* observed at a temperature T^*. In the framework of the London model, and including thermal fluctuations of vortices, we found for the temperature dependence of the penetration depth λ_ab(T) = λ_ab(0)[1 − (T/T_c0)ⁿ]^−1/2, with n 1.7 and λ_ab (T = 0) 4000 Å. The estimated upper critical fields μ₀H_c2,c are of the order of 10 T. We observe a peculiar negative slope M/T at low temperature and sufficiently high external magnetic field. This feature seems to be a characteristic of the Bi-2201 phase. However, we do not know whether it is associated with the superconducting mixed-state. A small amount of magnetic impurities could also be responsible for this behavior. Finally, the behavior of the reversible magnetization of the Bi-2201 samples investigated, which are situated at the optimal and in the overdoped region, did not indicate any unusual temperature dependence for the upper critical field H_c2,c.     

Magnetic phase transition in (Ba, Sr)Fe12O19 single crystals

The critical exponents β, γ and δ of single crystals of hexagonal ferrites BaFe₁₂O₁₉ and SrFe₁₂O₁₉ were determined from modified Arrott plots, scaling plots, ln(J) versus ln(μ₀H) plots and the method of Kouvel and Fisher. The results resemble those of the strong anisotropic ferromagnet Nd₂Fe₁₄B. Crossover effects are discussed by estimating the ranges within which dipolar and anisotropic interactions dominate, and by analyzing the temperature-dependent exponents β(T) and γ(T). In addition, the λ-line was determined from measurements in the hard direction, and the critical exponent ω was fitted.     

Low-temperature AC conductivity of Bi2Sr2CaCu2O8+δ

We report measurements of anamolously large dissipative conductivities, σ₁, in Bi₂Sr₂CaCu₂O_8+δ at low temperatures. We have measured the complex conductivity of Bi₂Sr₂CaCu₂O_8+δ thin films at 100–600 GHz as a function of doping from the underdoped to the overdoped state. At low temperatures there exists a residual σ₁ which scales with the T=0 superfluid density as the doping is varied. This residual σ₁ is larger than the possible contribution to σ₁ from a thermal population of quasiparticles (QP) at the d-wave gap nodes.     

Out-of-plane conductivity in Bi2Sr2CuOy crystals

We present extensive measurements of anisotropic resistivity on Bi₂Sr₂CuO_y crystals grown from melts with different Bi/Sr ratios and doped with Pb. We find that the temperature variation of the c-axis resistivity _c(T) is correlated with the in-plane resistivity _ab. Depending on the starting compositions, the normal-state in-plane resistivity _ab can either show localized conduction at low temperature or be metallic (d_ab/dT < 0) in the whole temperature range. Correspondingly, a change of the T dependence of _c from nonmetallic (d_c/dT < 0) in the whole measured temperature range (4.2–300 K) to a mixed (d_c/dT < 0 at low T but d_c/dT> 0 at high T) conduction is observed. In accompany, the magnitude of _c at low T decreases by about two orders. We have quantified the trend of the _c(T) and examined some current proposals concerning the out-of-plane transport.     

The dependence of I–V and C–V characteristics on temperature in the H-terminated Pb/p-Si(1 0 0) Schottky barrier diodes

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of H-terminated Pb/p-Si/Al contacts fabricated by us have been measured in the temperature range of 77–300 K. The experimental values of the barrier height (BH) Φ_bo and the ideality factor n for the device range from 0.674 and 1.072 eV (at 300 K) to 0.352 and 2.452 eV (at 77 K), respectively. The ideality factors become larger with lowering temperature while the barrier height decreases. The Φ_bo(n) plot shows a linear dependence in the temperature range of 77–300 K that can be explained by the barrier inhomogeneity at the metal/semiconductor interface. The extrapolation of the linear Φ_bo(n) plot to n = 1 has given a homogeneous barrier height of approximately 0.713 eV for the Pb/p-Si(1 0 0) contact. A Φ_bo versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of and σ_s = 80.5 mV for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Then, a modified versus 1/T plot gives and A^* as 0.828 eV and 54.89 A/cm² K², respectively. Furthermore, an average value of −0.687 meV/K for the temperature coefficient has been obtained, the value of −0.687 meV/K for hydrogen terminated p-type Si differs from those given for p-type Si without hydrogen termination in the literature.     

Magnetization reversal process in thin Co nanowires

The magnetoresistance of single Co nanowires of various widths is investigated at low temperatures applying magnetic fields μ₀H up to 4.5 T. The in-plane longitudinal magnetoresistance shows pronounced features at coercive fields H_c explained by the anisotropic magnetoresistance indicating the magnetization reversal process. Monte Carlo simulations present the magnetization distribution during the reversal process, revealing different mechanisms depending on the wire width.     

Pressure–temperature studies on conductivity of TlX(X=Cl,Br,I) compounds:: I: phase diagram. II: ionic mobility

We have measured the conductivity σ of TlX(X=Cl, Br, I) compounds up to 5.3 GPa and between 300–823 K. The σ–T dependence for all compounds can be divided into three distinct regions: (i) low temperature (LT), <400 K, with unusual negative σ–T dependence, (ii) intermediate temperature (IT), 400<650 K, with positive σ–T dependence and (iii) high temperature (HT), T>650 K, with positive σ–T dependence. The σ–T isobars were used to construct the T–P solid phase diagram for each compound. The LT region data indicate a new meta-stable phase in the 1.0–3.5 GPa range. The LT→IT transition is characterized by an inverse σ–T dependence followed by normal Arrhenius behavior up to and including the HT region. The extrapolation to 1 atm of the P-dependent boundary between IT and HT regions above 3 GPa for each compound in the P–T plot yields a value close to its respective normal (1 atm) T_melt suggesting a solid order–disorder transition type paralleling -AgI behavior. The abrupt drop in conductivity in the LT region for P between 2.5–4.1 GPa of all compounds is at variance with the Arrhenius behavior observed for unperturbed ion migration implying the appearance of a second factor overriding the Arrhenius temperature dependence. Normal Arrhenius σ–T dependence prevails in both IT and HT regions with Q_c values of 85–100 kJ mol⁻¹ and 50–75 kJ mol⁻¹, respectively. The higher conductivities at 0.4 GPa for TlBr and TlI relative to their 1 atm data and the increasing σ with P are in strong contrast to the normal σ-P behavior of TlCl. The dependence of activation volume ΔV^‡ on T for TlCl, i.e. ΔV^‡>0, shows abnormally high values with a maximum at 500 K for P<3.0 GPa but reasonable ΔV^‡ values appear above 3.0 GPa. The ΔV^‡–T dependence for both TlBr and TlI with ΔV^‡<0 is incompatible with an ion transport mechanism suggesting an electronic conduction process and implying an ionic–metallic transition at higher pressures. These contrasting conductivity features are discussed and interpreted in terms of electronegativity differences and bonding character rather than structure.     

Magnetic and electronic phase transitions and magnetoresistance effect in the Pr0.5−xLaxSr0.5MnO3 (, 0.15) system

The electronic and magnetic phase transitions of Pr_0.5−xLa_xSr_0.5MnO₃ with x=0.10 and 0.15 were investigated. The M(T) and ρ(T) curves for these samples clearly show transitions from antiferromagnetic insulator to ferromagnetic semiconductor, ferromagnetic metal and finally to paramagnetic semiconductor as the temperature is increased from 5 to 300 K. Especially, two obvious protrudent peaks in the magnetoresistance curves MR(T) for these samples were clearly observed in the relative low magnetic field, 1 T. One peak appears at around the antiferromagnet-ferromagnet transition temperature T_N (150 K) with MR≈−23%, another occurs at around the ferromagnet-paramagnet transition temperature T_C(275 K ) with MR≈−8.2%. In addition, when the magnetic field was increased, the temperature corresponding to the MR peak at T_N shifts to lower temperature while the temperature corresponding to the MR peak at T_C is fixed.     

Vortex penetration depth of κ-(ET)2Cu[N(CN)2]Br

The magnetic field dependence of the in-plane penetration depth λ_|(H) for single crystal κ-(ET)₂Cu[N(CN)₂]Br has been measured at 3, 9.6, and 36 MHz. Over a limited range, λ_| scales with a characteristic field H^*(T) that coincides with a shoulder in the λ_| vs. H curves. Above that field, λ_| increases sharply toward a second inflection point at H^**(T) that coincides with is close to the irreversibility line measured by magnetization. For fields larger than H^** the penetration depth diverges, suggesting that the vortex lattice has melted. The field dependence at one frequency agrees qualitatively with a model of pinned vortices at low fields giving way to flux flow at higher fields. However, the observed frequency dependence deviates significantly from the predictions of this model, suggesting that collective effects play a major role. Our technique also yields a new measurement for the interplane penetration depth λ 300 μm, implying an anisotropy λ/λ_| > 200.     

Incommensurate antiferromagnetic structures in NdIn3

Among the AuCu₃-type RIn₃ series where R is a rare earth, the NdIn₃ compound presents a complex magnetic phase diagram. In this compound, which orders antiferromagnetically at T_N = 5.9 K, three magnetic phases are separated by two sharp first-order transitions. The phase diagrams, determined for the main crystallographic directions, by magnetization measurements in fields up to 7 T show a strong dependence of the transition temperatures. In order to determine the actual magnetic structures in NdIn₃, a neutron diffraction experiment has been performed on a single crystal under magnetic field. It shows that the magnetic structures are collinear (single q) with the magnetic moments aligned along the fourfold axis. They clearly evidence the existence of two incommensurate phases with q = (1/2, 1/2, τ): for T_N T 5.5 K, τ₁ ≈ 0.037 2π/a and the structure is sine-wave modulated, for 5.5 K > T > 4.7 K, τ₂ = 0.017 2π/a and the structure squares up. Below 4.7 K the q = (1/2, 1/2, 0) commensurate structure is stabilized.     

Sign reversal of anisotropic magnetoresistance and anomalous thickness-dependent resistivity in Sr2CrWO6/SrTiO3 films

High-quality Sr₂CrWO₆ (SCWO) films have been grown on SrTiO₃ (STO) substrate by pulsed laser deposition under low oxygen pressure. With decrease of the film thickness, a drastic conductivity increase is observed. The Hall measurements show that the thicker the film, the lower the carrier density. An extrinsic mechanism of charge doping due to the dominance of oxygen vacancies at SCWO/STO interfaces is proposed. The distribution and gradient of carrier concentration in SCWO films are considered to be related to this phenomenon. Resistivity behavior observed in these films is found to follow the variable range hopping model. It is revealed that with increase of the film thickness, the extent of disorder in the lattice increases, which gives a clear evidence of disorder-induced localization charge carriers in these films. Magnetoresistance measurements show that there is a negative magnetoresistance in SCWO films, which is considered to be caused by the magnetic scattering of magnetic elements Cr³⁺ and W⁵⁺. In addition, a sign reversal of anisotropic magnetoresistance (AMR) in SCWO film is observed for the first time, when the temperature varies across a characteristic value, T_M. Magnetization—temperature measurements demonstrate that this AMR sign reversal is caused by the direction transition of easy axis of magnetization from the in-plane ferromagnetic order at T > T_M to the out-of-plane at T < T_M.     

Investigation of light scalar resonances a0(980)/ƒ0(980) with ANKE

A program to investigate the light scalar resonances a₀(980)/ƒ₀(980) in hadronic interactions via their decay into the πη and channels has started at the ANKE spectrometer of COSY-Jülich. As the first step the reactions pp → dπ⁺X and pp → dK⁺X have been measured at two energies, T_p = 2.65 GeV and 2.83 GeV. The status of the analysis at T_p = 2.65 GeV is presented. A total cross section of about 50 nb has been determined for the reaction .     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.     

Structure determination, magnetic and optical properties of a new chromium(II) thioantimonate, [Cr((NH2CH2CH2)3N)]Sb4S7

The chromium(II) antimony(III) sulphide, [Cr((NH₂CH₂CH₂)₃N)]Sb₄S₇, was synthesised under solvothermal conditions from the reaction of Sb₂S₃, Cr and S dissolved in tris(2-aminoethyl)amine (tren) at 438 K. The products were characterised by single-crystal X-ray diffraction, elemental analysis, SQUID magnetometry and diffuse reflectance spectroscopy. The compound crystallises in the monoclinic space group P2₁/n with a=7.9756(7), b=10.5191(9), c=25.880(2) Å and β=90.864(5)°. Alternating SbS₃³⁻ trigonal pyramids and Sb₃S₆³⁻ semi-cubes generate Sb₄S₇²⁻ chains which are directly bonded to Cr(tren)²⁺ pendant units. The effective magnetic moment of 4.94(6)μ_B shows a negligible orbital contribution, in agreement with expectations for Cr(II):d⁴ in a ⁵A ground state. The measured band gap of 2.14(3) eV is consistent with a correlation between optical band gap and framework density that is established from analysis of a wide range of antimony sulphides.