Growth of TiO2 nanosheet-array thin films by quick chemical bath deposition for dye-sensitized solar cells

Rutile TiO₂ nanofilms, which were composed of many nanosheet-array domains with different orientations, were synthesized directly on fluorine-doped SnO₂ conductive glass (FTO) substrates by a chemical deposition method in a short time in this paper. The average thickness of the nanosheets is about 10 nm; the nanosheets in each domain were parallel to each other and perpendicular to the substrate. The size and profile of the domains have a good correspondence to those of the FTO grains of the substrate, indicating a coherent nucleating and epitaxial growing nature of the films. The nanosheets split gradually and finally developed into nanofibers on prolonging the growing time to 20 h. Dye-sensitized solar cells, which were fabricated with the films, present an open-circuit voltage of 0.63 V and a short-circuit current of 7.02 mA/cm², respectively.     

Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO2 thin films by DC magnetron sputtering

Titanium dioxide (TiO₂) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO₂ films has been analyzed by X-ray photoelectron spectroscopy. The TiO₂ films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO₂ into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO₂/p-Si have been fabricated. The leakage current density of unbiased films was 1 × 10⁻⁶ A/cm² at a gate bias voltage of 1.5 V and it was decreased to 1.41 × 10⁻⁷ A/cm² with the increase of substrate bias voltage to −150 V owing to the increase in thickness of interfacial layer of SiO₂. Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at −150 V. The capacitance at 1 MHz for unbiased films was 2.42 × 10⁻¹⁰ F and it increased to 5.8 × 10⁻¹⁰ F in the films formed at substrate bias voltage of −150 V. Dielectric constant of TiO₂ films were calculated from capacitance–voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at −150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to −150 V.     

Effects of ZnO coating on the performance of TiO2 nanostructured thin films for dye-sensitized solar cells

ZnO-coated TiO₂ (ZTO) thin films were deposited on ITO substrates by a sol–gel method for application as the work electrode for dye-sensitized solar cells (DSSCs). The I–V curve and the incident photon-to-current conversion efficiency (IPCE) value of DSSCs for ZTO thin films were studied and compared with single TiO₂ films. The results show that the short-circuit photocurrent (J _sc) and open-circuit voltage (V _oc) values increased from 3.7 mA/cm² and 0.68 V for the DSSCs with a single TiO₂ film to 4.5 mA/cm² and 0.72 V, respectively, for the DSSCs with a ZTO thin film. It indicated that the DSSCs with a ZTO thin film contributed to provide an inherent energy barrier that suppressed charge recombination significantly. In addition, the higher IPCE value in the ZTO thin film is attributed to the better charge separation by a fast electron transfer process using two semiconductors with different conduction band edges and energy positions.     

TiO2表面质子化对染料敏化太阳能电池性能及吸附染料稳定性的影响

采用致密平整TiO₂薄膜作为染料敏化太阳能电池光电极,并研究了HCl处理表面质子化对电池性能的影响. 结果表明,HCl处理后电池的短路电流显著提升,电池的开路电压则有轻微的下降,电池电流提升了31%,而能量转化效率则提升了25%. 这是因为TiO₂的表面质子化增强了吸附染料与TiO₂间的电学耦合,提高了染料中激发电子向TiO₂导带的注入速率. 而电压的下降,一方面是由于质子化会引起TiO₂导带能级     

Synthesis and field emission of diamond-like carbon nanorods on TiO2/Ti nanotube arrays

Highly ordered TiO₂/Ti nanotube arrays were fabricated by anodic oxidation method in 0.5 wt% HF. Using prepared TiO₂/Ti nanotube arrays deposited Ni nanoparticles as substrate, high quality diamond-like carbon nanorods (DLCNRs) were synthesized by a conventional method of chemical vapor deposition at 750 °C in nitrogen atmosphere. DLCNRs were analyzed by filed emission scanning electron microscopy and Raman spectrometer. It is very interesting that DLCNRs possess pagoda shape with the length of 3–10 μm. Raman spectra show two strong peaks about 1332 cm⁻¹ and 1598 cm⁻¹, indicating the formation of diamond-like carbon. The field emission measurements suggest that DLCNRs/TiO₂/Ti has excellent field emission properties, a low turn-on field about 3.0 V/μm, no evident decay at 3.4 mA/cm² in 480 min.     

TiO2 Nanoparticles Produced by Electric-Discharge-Nanofluid-Process as Photoelectrode of DSSC

利用自制TiO₂纳米粒子研究敏化染敏太阳能电池. 使用自制的旋转涂布加热平台装置将产出的TiO₂粒子均匀的涂布在ITO导电玻璃上形成薄膜,浸泡于N-719 染料中12小时以上作为DSSCs的光电极 元件,最后完成染料敏化太阳能电池的系统组装并进行光电转换效率测量. 实验结果表明,放电过程产出的TiO₂纳米粒子具有锐钛矿晶相,粒径尺寸可控制在20～70 nm,粒子表面电位约为-30 mV,是稳定的纳米悬浮夜. 添加0.5 mL 的Triton X-100在导电玻璃表面上,利用的旋转涂布加热到22 oC可以制得厚度均匀缜密的薄膜结构,不但粒子不受到热处理效应与介面活性剂的影响而发生晶相改变,并且薄膜也有良好的染料吸附效果. 较厚二氧化钛薄膜的光电极会提升敏化染敏太阳能电池的效率. 实验结果得知,以15 μm的二氧化钛薄膜组装DSSCs测得最高效率2.15%,但是当薄膜厚度超过15 μm 则会导致开路电压与充填因子逐渐下降,光电转换效率变差.     

TiO2/CdSe多层膜结构的制备及光电化学性能研究

采用电化学方法在导电的ITO/TiO₂ 薄膜上沉积了棕红色CdSe薄膜, 并制得TiO₂/CdSe多层膜体系,研究了多层膜的微结构和光电化学性能. 实验表明, CdSe薄膜沿着(111)方向择优生长, 多层膜结构的厚度和紫外-可见光吸收强度随着沉积层数的增加而增加. 通过测定多层膜电极的光电化学性能表明, 二层膜体系的开路电压和短路电流密度最大,光电化学性能最好.     

Properties of K0.5Bi0.5TiO3 thin films deposited on different substrates

K_0.5Bi_0.5TiO₃ thin films were deposited on fused quartz, n-type Si(100) and Pt/TiO₂/SiO₂/Si substrates by repeated coating/dying cycles. X-ray diffraction analysis shows that the films annealed at 700 °C for 10 min present perovskite phase. Atomic force microscopy reveals that the surface morphology is smooth, the grain sizes of the films on Si(100) are quite larger than on fused quartz. The capacitance-voltage hysteresis loops at various sweeping speed are collected as are polarization types. The films in the ON and OFF states are relatively stable. The films also exhibit a hysteresis loop at an applied voltage of 4 V, with a remanent polarization of 9.3 μC/cm² and a coercive voltage of 2 V. The insulating property of negative bias voltage is better than that of positive bias voltage. The transmittance of the films is between 74 and 82% in the wavelength range of 200-2000 nm.     

Synthesis and characterization of TiO2 thin films coated on metal substrate

Nanostructured titanium dioxide (TiO₂) thin films have been prepared on metal substrates using a facile layer-by-layer dip-coating method. The phase structure and morphologies of preparing samples were characterized by means of X-ray powder diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The results confirm that films are highly crystalline anatase TiO₂ and free from other phases of titanium dioxide. Scanning electron microscopy (SEM) shows that the nanoparticles are sintered together to form a compact structure. The electrical properties of samples were investigated by cutternt-voltage analysis, the result indicates that a rectifying junction between the nanocrystalline TiO₂ film and metal substrate was formed. The photoelectrochemical characteristics recorded under 1.5 AM illumination indicates that the as-fabricated thin film electrode possesses the highest photocurrent density at 450 °C, which is 1.75 mA/cm² at 0 V vs. Ag/AgCl.     

Characteristics of sandwich-structured Al2O3/HfO2/Al2O3 gate dielectric films on ultra-thin silicon-on-insulator substrates

Sandwich-structure Al₂O₃/HfO₂/Al₂O₃ gate dielectric films were grown on ultra-thin silicon-on-insulator (SOI) substrates by vacuum electron beam evaporation (EB-PVD) method. AFM and TEM observations showed that the films remained amorphous even after post-annealing treatment at 950 °C with smooth surface and clean silicon interface. EDX- and XPS-analysis results revealed no silicate or silicide at the silicon interface. The equivalent oxide thickness was 3 nm and the dielectric constant was around 7.2, as determined by electrical measurements. A fixed charge density of 3 × 10¹⁰ cm⁻² and a leakage current of 5 × 10⁻⁷A/cm² at 2 V gate bias were achieved for Au/gate stack /Si/SiO₂/Si/Au MIS capacitors. Post-annealing treatment was found to effectively reduce trap density, but increase in annealing temperature did not made any significant difference in the electrical performance.     

Photosensitization of nanocrystalline TiO2 film electrode with cadmium sulphoselenide

Nanocrystalline titanium dioxide (TiO₂) thin films composed of densely packed nanometer-sized grains have been successfully deposited onto an indium-doped-tin oxide (ITO) substrate. Then cadmium sulphoselenide (CdSSe) thin film was deposited onto pre-deposited TiO₂ to form a TiO₂/CdSSe film, at low temperature using a simple and inexpensive chemical method. The X-ray diffraction, selected area electron diffraction, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and water contact angle techniques were used for film characterization. Purely rutile phase of TiO₂ with super-hydrophilic and densely packed nanometer-sized spherical grains of approximate diameter 30-40 (±2) nm was observed. The increase in optical absorption was observed after CdSSe film deposition. Nest like surface morphology of CdSSe on TiO₂ surface results in air trapping in the crevices which prevents water from adhering to the film with increase in water contact angle. Photosensitization of TiO₂ with CdSSe was confirmed with light illumination intensity of 80 mW/cm².     

Visible-light-activated Ce-Si co-doped TiO2 photocatalyst

To enhance the visible photocatalytic activity and thermal stability of TiO₂, Ce-Si co-doped TiO₂ materials were synthesized through a nonaqueous method of which the purpose was to reduce the aggregation between TiO₂ particles. The obtained materials maintained anatase phase and large surface area of 103.3 m² g⁻¹ even after calcined at 800 °C. The XPS results also indicated that Si was weaved into the lattice of TiO₂, and Ce mainly existed as oxides on the surface of TiO₂ particles. The doped Si might enhance surface area and suppress transformation from anatase to rutile, while the doped Ce might cause visible absorption and inhibit crystallite growth during heat treatment. Evaluated by decomposing dye Rhodamine B, visible photocatalytic activity of Ce-Si co-doped TiO₂ was obviously higher than that of pure TiO₂ and reached the maximum at Ce and Si contents of 0.5 mol% and 10 mol%.     

Light intensity and temperature dependence on performance of a photoelectrochemical cells of ITO/TiO<Subscript>2</Subscript>/PVC-LiClO<Subscript>4</Subscript>/graphite

The photovoltaic characteristics of a photoelectrochemical cell of ITO/TiO₂/PVC-LiClO₄/graphite are reported. This paper is concerned with the influence of light intensity and temperature on short-circuit current density, J_sc and open-circuit voltage, V_oc of the device. The photoelectrochemical cell material was a screen-printed layer of titanium dioxide onto an ITO-covered glass substrate, which was used as a working electrode of the cell. The solid electrolyte was polivinylchloride-lithium perchlorate. The graphite film serves as a counter electrode of the cell. The current density–voltage characteristics of the device under an illumination of 20, 40, 60, 80 and 100 mW cm⁻² light from a tungsten halogen lamp were recorded at 40 °C as well as under an illumination of 100 mW cm⁻² at 30, 35, 40, 45 and 50 °C, respectively. It was found that the short-circuit current density, J_sc of the device increases with both light intensity and temperature. The J_sc obtained at 100 mW cm⁻² was 1.0 μAcm⁻² and that at 50 °C was 0.7 μAcm⁻².     

TiO2 thick films supported on reticulated macroporous Al2O3 foams and their photoactivity in phenol mineralization

TiO₂ thick films deposited on macroporous reticulated Al₂O₃ foams with pore size of 10 ppi and 15 ppi were prepared using dip coating from slurries of Aeroxide^® P25 nanopowder and precipitated titania. All prepared films have sufficiently good adhesion to the surface of the substrate also in case of strongly cracked films. No measurable release of deposited TiO₂ after repeated photocatalytic cycles was observed. The photocatalytic activity was characterized as the rate of mineralization of aqueous phenol solution under irradiation of UVA light by TOC technique. The best activity was obtained with Aeroxide^® P25 coated Al₂O₃ foam with the pore size of 10 ppi, annealed at 600 °C. The optimal annealing temperature for preparation of films from precipitated titania could be determined at 700 °C. Films prepared by sol-gel deposition technique were considerably thinner compared to coatings made of suspensions and their photocatalytic activity was significantly smaller.     

A combined experimental and theoretical analysis of Fe-implanted TiO2 modified by metal plasma ion implantation

Photocatalyst titanium dioxide (TiO₂) thin films were prepared using sol-gel process. To improve the photosensitivity of TiO₂ at visible light, transition metal of Fe was implanted into TiO₂ matrix at 20 keV using the metal plasma ion implantation process. The primary phase of the Fe-implanted TiO₂ films is anatase, but X-ray diffraction revealed a slight shift of diffraction peaks toward higher angles due to the substitutional doping of iron. The additional band gap energy levels were created due to the formation of the impurity levels (Fe-O) verified by X-ray photoelectron spectroscopy, which resulted in a shift of the absorption edge toward a longer wavelength in the absorption spectra. The optical band gap energy of TiO₂ films was reduced from 3.22 to 2.87 eV with an increase of Fe ion dosages from 0 to 1 × 10¹⁶ ions/cm². The band gap was determined by the Tauc plots. The photocatalysis efficiency of Fe-implanted TiO₂ was assessed using the degradation of methylene blue under ultraviolet and visible light irradiation. The calculated density of states for substitutional Fe-implanted TiO₂ was investigated using the first-principle calculations based on the density functional theory. A combined experimental and theoretical Fe-implanted TiO₂ film was formed, consistent with the experimentally observed photocatalysis efficiency of Fe-implanted TiO₂ in the visible region.     

Quantum confinement effects of CdTe nanocrystals sequestered in TiO2 matrix: effect of oxygen incorporation

Thin films of TiO₂ with high volume fraction (40–55%) and crystallite size (6–40 nm) of CdTe nanoparticles had been prepared by rf magnetron sputtering from a composite TiO₂:CdTe target at room temperature and 373 K. A detailed optical properties of nanocrystalline CdTe:TiO₂ films as-deposited and after thermal treatment (300 °C) are studied. The absorbance of the TiO₂ films with CdTe nanocrystallite dispersions depends both on the nanocrystallite size and volume fraction. The blue-shifts of the optical absorption edge concurrent with the CdTe nanocystal size reduction for as-deposited and after thermal treatment of nanocrystalline CdTe:TiO₂ thin films with respect to the bulk semiconductor agrees quite well with the strong quantum confinement theory. A slight deviation in absorption edge values than the predicted values from the strong quantum confinement model can be attributed to change in interplanar distance due to oxygen incorporation and inhomogeneous size distribution of CdTe nanocrystallites in these films.     

Electrochemical properties of electrosynthesized TiO2 thin films

Titanium dioxide (TiO₂) thin films prepared by cathodic electrodeposition on indium-tin-oxide coated glass substrates from simple aqueous peroxo-titanium complex solutions have been studied as a function of sintering temperature (25-500 °C). The films crystallized in to anatase phase at relatively low temperature (300 °C). Electrochemical properties of amorphous and anatase films were investigated by cyclic voltammogram (CV) in lithium ion containing organic electrolyte. All the films were found to show reversible electrochemical properties upon Li⁺ ion intercalation. The effects of sintering temperature on the crystallinity and consequently on the electrochemical properties of TiO₂ has been discussed.     

Characterization of TiO2/Au/TiO2 films deposited by magnetron sputtering on polycarbonate substrates

Transparent and conducting TiO₂/Au/TiO₂ (TAuT) films were deposited by reactive magnetron sputtering on polycarbonate substrates to investigate the effect of the Au interlayer on the optical, electrical, and structural properties of the films. In TAuT films, the Au interlayer thickness was kept at 5 nm. Although total thickness was maintained at 100 nm, the stack structure was varied as 50/5/45, 70/5/25, and 90/5/5 nm.In XRD pattern, the intermediate Au films were crystallized, while all TAuT films did not show any diffraction peaks for TiO₂ films with regardless of stack structure. The optical and electrical properties were dependent on the stack structure of the films. The lowest sheet resistance of 23 Ω/□ and highest optical transmittance of 76% at 550 nm were obtained from TiO₂ 90 nm/Au 5 nm/TiO₂ 5 nm films. The work function was dependent on the film stack. The highest work function (4.8 eV) was observed with the TiO₂ 90 nm/Au 5 nm/TiO₂ 5 nm film stack. The TAuT film stack of TiO₂ 90 nm/Au 5 nm/TiO₂ 5 nm films is an optimized stack that may be an alternative candidate for transparent electrodes in flat panel displays.     

溶胶-凝胶法制备(Ba0.7Sr0.3)TiO3/LaNiO3异质薄膜及其结构和介电性质研究

采用改进的溶胶-凝胶方法在单晶Si(100)衬底上制备了介电性能优异的(Ba_0.7Sr_0.3)TiO₃/LaNiO₃异质薄膜.实验发现，在750 ℃下 、O₂气氛中晶化的LaNiO₃薄膜的电阻率最小.C-V与I-V特性测量表明(Ba_0.7Sr_0.3)TiO₃薄膜具有优异的介电性能，在频率为50kHz、零偏压下的相对介电常数ε_r>300，偏压为6V时漏电流密度J_L<1.2×10^-6A/cm². 关键词： xSr_1-x)TiO_３铁电薄膜')" href="#">(Ba_xSr_1-x)TiO_３铁电薄膜 ３底电极')" href="#">LaNiO３底电极 溶胶-凝胶法     

Structural and morphological characterization of TiO2 nanostructured films grown by nanosecond pulsed laser deposition

TiO₂ has attracted a lot of attention due to its photocatalytic properties and its potential applications in environmental purification and self cleaning coatings, as well as for its high optical transmittance in the visible-IR spectral range, high chemical stability and mechanical resistance. In this paper, we report on the growth of TiO₂ nanocrystalline films on Si (1 0 0) substrates by pulsed laser deposition (PLD). Rutile sintered targets were irradiated by KrF excimer laser (λ = 248 nm, pulse duration ∼30 ns) in a controlled oxygen environment and at constant substrate temperature of 650 °C. The structural and morphological properties of the films have been studied for different deposition parameters, such as oxygen partial pressure (0.05-5 Pa) and laser fluence (2- 4 J/cm²). X-ray diffraction (XRD) shows the formation of both rutile and anatase phases; however, it is observed that the anatase phase is suppressed at the highest laser fluences. X-ray photoelectron spectroscopy (XPS) measurements were performed to determine the stoichiometry of the grown films. The surface morphology of the deposits, studied by scanning electron (SEM) and atomic force (AFM) microscopies, has revealed nanostructured films. The dimensions and density of the nanoparticles observed at the surface depend on the partial pressure of oxygen during growth. The smallest particles of about 40 nm diameter were obtained for the highest pressures of inlet gas.