共查询到19条相似文献,搜索用时 78 毫秒
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介绍了霍尔效应实验原理,对实验数据进行曲线拟合,得出了通电双圆线圈内磁场的分布,并计算了霍尔元件的霍尔灵敏度。 相似文献
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结合大学物理实验教学中霍尔效应的讲解,阐述了霍尔效应的原理,提出了霍尔效应实验的一些改进方法,重点研究了霍尔元件的保护及对霍尔元件的应用进行了探讨. 相似文献
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霍尔效应实验是一个受系统误差影响较大的实验,特别是在霍尔效应产生的同时,伴随产生的其他效应引起的附加电场对实验影响较大.本文简单介绍该实验的原理和实验误差的来源,使用Origin 6.0软件处理实验数据,分析附加电场对霍尔电压和电流线性关系的影响,以及对霍尔系数测量值的影响.结果表明:附加电场的存在不会影响所测霍尔电压和电流U-Is的线性关系,但对霍尔系数的测量有较大影响. 相似文献
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霍尔传感器及其在物理实验中的应用 总被引:2,自引:0,他引:2
介绍了霍尔传感器的原理以及工程应用中的霍尔传感器的种类,举例澄明了开关型霍尔传感器在重力加速度测量实验中应用,同时给出了具体的应用电路。 相似文献
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介绍了霍尔传感器的原理以及工程应用中的霍尔传感器种类 ,举例说明了开关型霍尔传感器在重力加速度测量实验中的应用 ,同时给出了具体的应用电路 相似文献
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量子霍尔效应的发展历程 总被引:1,自引:0,他引:1
量子霍尔效应的发现是新兴的低维凝聚态物理发展中的一件大事,分数量子霍尔效应的发现更是开创了一个研究多体现象的新时代,并将影响到物理学的很多分支,这个领域两次被授予诺贝尔物理奖,引起了人们很大的兴趣,文章介绍了量子霍尔效应发展的历程,主要内容包括1897年霍尔发现霍尔效应、1980年Klaus von Klitzing发现整数量子霍尔效应、1982年崔琦和Horst L.Stormer发现分数量子霍 相似文献
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THEORETICAL AND EXPERIMENTAL INVESTIGATION ON ANOMALOUS HALL EFFECT OF HETEROGENOUS SEMICONDUCTOR SAMPLES 下载免费PDF全文
Based on the theoretical results of inversion layers model and interpenetrating network model, we studied the anomalous Hall effect of heterogenous semiconductor samples, and obtained the following results: (1) the wider the sample energy gap, the higher the temper-ature at which anomalous Hall effect begins to appear; (2) the lower the sample resistivity, the higher the temperature at which anomalous Hall effect begins to appear, which is further verified in our experiment; (3) mobility is the main factor which determines what role p-n junction plays in sample Hall voltage; (4) for n-Ge sample with inversion layers structure, with the increase of p-type region, the Hall effect changes from normal n-type Hall effect to anomalous Hall effect of the single dip type, then to anomalous Hall effect of the second reversal type. 相似文献
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B. A. Aronzon A. B. Granovskii S. N. Nikolaev D. Yu. Kovalev N. S. Perov V. V. Ryl’kov 《Physics of the Solid State》2004,46(8):1482-1486
The Hall effect and magnetoresistance in Cr(50 Å)/Co(200 Å) bilayer films prepared by ion sputtering on a silicon substrate are investigated at room temperature. The planar Hall effect revealed in the bilayer films differs from the planar Hall effect observed usually in that it is symmetric with respect to the sign of the change in the rotation angle of the magnetic moment in the film plane. Under conditions where the symmetric planar Hall effect is realized, the change in the Hall resistance is more than 10% and exceeds the anisotropic magnetoresistance by two orders of magnitude. The hysteresis loops are measured at different orientations of magnetic fields. The planar Hall effect is studied in a weak longitudinal magnetic field. The results obtained demonstrate that the symmetric planar Hall effect is associated with the multidomain structure of the cobalt film in Cr/Co bilayer composites. 相似文献
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《Physics letters. A》2020,384(3):126073
Hall effect measurements conventionally rely on the use of dc magnetic fields. For electronic devices made of ultrathin semiconducting materials, such as molybdenum disulfide (MoS2), the dc Hall effect measurements have practical difficulties. Here, we report the results of the Hall effect measurements using ac magnetic fields and a lock-in detection of the Hall voltage for field effect transistors with ultrathin MoS2 channels. The ac Hall effect measurements have some advantages over the dc measurements. The carrier concentration and the Hall mobility were estimated as a function of gate voltage from the results of the ac Hall effect measurements. They used a magnetic field strength that was lower by two orders of magnitude than those used in prior studies on MoS2 devices, which relied on dc magnetic fields. 相似文献
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从光束角谱理论出发建立了描述光自旋霍尔效应的傍轴传输模型, 利用这一模型分析了光自旋霍尔效应中的交叉偏振特性. 通过分析交叉偏振效应强度和入射角变化的规律, 发现交叉偏振效应越强, 光自旋霍尔效应中的自旋分裂越大. 为便于实验观察, 将入射角选在光自旋霍尔效应较强的布儒斯特角附近, 观测到了强的交叉偏振效应. 增大交叉偏振分量的同时减小初始偏振分量, 可显著增强光自旋霍尔效应. 这一调控方法为研制基于光自旋霍尔效应的新型光子器件提供了理论基础. 相似文献
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Based upon Raman spin-lattice interaction, we propose a theoretical model for the phonon Hall effect in paramagnetic dielectrics, which was discovered recently in an experiment [C. Strohm, G. L. J. A. Rikken, and P. Wyder, Phys. Rev. Lett. 95, 155901 (2005).]. The phonon Hall effect is revealed to be a phonon analogue to the anomalous Hall effect in electron systems. The thermal Hall conductivity is calculated by using the Kubo formula. Our theory reproduces the essential experimental features of the phonon Hall effect, including the sign, magnitude, and linear magnetic field dependence of the thermal Hall conductivity. 相似文献
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V. E. Arkhincheev 《Pramana》2008,70(2):271-277
Bound values for Hall conductivity under quantum Hall effect (QHE) conditions in inhomogeneous medium has been studied. It
is shown that bound values for Hall conductivity differ from bound values for metallic conductivity. This is due to the unusual
character of current percolation under quantum Hall effect conditions.
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Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers 下载免费PDF全文
The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current,respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect. 相似文献
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