霍尔效应实验分层次内容体系的构建

以霍尔效应实验为例,结合科技前沿研究热点,探讨了基于石墨烯霍尔效应的四级分层次教学内容构建.霍尔效应基础内容包括石墨烯霍尔器件的灵敏度和伏安特性的测量;提升内容为石墨烯霍尔器件转移曲线的测量,载流子浓度和迁移率的计算;进阶内容包括石墨烯霍尔器件的制作,石墨烯霍尔器件的自主应用;高阶内容涵盖石墨烯量子霍尔效应的测量和石墨烯霍尔效应的仿真计算.构建霍尔效应实验四级内容体系,可以更好地培养学生在基础知识、实验能力、科学素养和核心价值等方面的综合能力.     

基于大学物理实验中霍尔元件的保护及探讨

结合大学物理实验教学中霍尔效应的讲解,阐述了霍尔效应的原理,提出了霍尔效应实验的一些改进方法,重点研究了霍尔元件的保护及对霍尔元件的应用进行了探讨.     

HYS-1型霍尔效应应用技术综合实验仪

设计了集霍尔效应实验和霍尔效应应用实验于一体的集成数字式多功能实验仪.使用该仪器可做直流电压隔离传送实验、直流电流隔离检测实验、直流电流越限隔离报警实验和霍尔效应实验.     

霍尔元件的动态特性曲线的测量及研究

以实验手段研究了霍尔元件在交变电流及交变磁场下的动态特性.实验以霍尔效应实验为基础,改变其中某一自变量,通以交变信号并保持其他条件不变,观察实验现象,得出霍尔电压的幅频特性以及相频特性.从实验结果可以看出霍尔元件的动态特性与静态特性有很大的不同.     

关于霍尔效应实验的误差分析

霍尔效应实验是一个受系统误差影响较大的实验,特别是在霍尔效应产生的同时,伴随产生的其他效应引起的附加电场对实验影响较大.本文简单介绍该实验的原理和实验误差的来源,使用Origin 6.0软件处理实验数据,分析附加电场对霍尔电压和电流线性关系的影响,以及对霍尔系数测量值的影响.结果表明:附加电场的存在不会影响所测霍尔电压和电流U-Is的线性关系,但对霍尔系数的测量有较大影响.     

霍尔传感器及其在物理实验中的应用

介绍了霍尔传感器的原理以及工程应用中的霍尔传感器种类 ,举例说明了开关型霍尔传感器在重力加速度测量实验中的应用 ,同时给出了具体的应用电路     

霍尔效应实验中一些问题的分析探讨

针对霍尔效应实验教学过程中,存在的一些教学难点,从实验原理出发,对实验过程中涉及的原理、半导体材料的选取、霍尔系数的计算等关键问题进行系统讨论。通过做图及计算得到了半导体材料的各项霍尔参量。对实验教学及霍尔传感器的设计提供理论和实验指导。     

霍尔传感器及其在物理实验中的应用

介绍了霍尔传感器的原理以及工程应用中的霍尔传感器的种类,举例澄明了开关型霍尔传感器在重力加速度测量实验中应用,同时给出了具体的应用电路。     

霍尔效应实验的智能化

利用单片系统控制霍尔效应实验过程，智能化地验证霍尔效应理论、测量给定元件的霍尔灵敏度，并且通过磁场的变化模拟了实际的控制系统，从而使学生对霍尔效应的理论、实验及应用有了充分的认识。     

光自旋霍尔效应的研究性实验教学

光自旋霍尔效应是由于光子的自旋-轨道相互作用导致自旋相反的光子相互分离的光学效应,极大地丰富了光学研究内涵,成为现代光学的研究前沿和热点.由于光自旋霍尔效应实验与由偏振片、望远镜、显微镜等器件组装的实验相通,因此可以把光自旋霍尔效应的研究成果进行整理,设计制作出适合于本科实验教学的仪器.本文对光自旋霍尔效应的研究进展进行了综述,并介绍了利用所开发的光自旋霍尔效应实验仪可开展的实验类型和进行研究性教学的情况.     

霍尔效应的发现

介绍了霍尔的生平,回顾了霍尔在导师罗兰的指导下,发现霍尔效应的历程;分析了罗兰和霍尔在这一研究中发挥的重要作用,以及霍尔在研究工作中的严谨作风和顽强毅力.     

Anomalous Hall effect of heavy holes in III-V semiconductor quantum wells

The anomalous Hall effect of heavy holes in semiconductor quantum wells is studied in the intrinsic transport regime, where the Berry curvature governs the Hall current properties. Based on the first--order perturbation of wave function the expression of the Hall conductivity the same as that from the semiclassical equation of motion of the Bloch particles is derived. The dependence of Hall conductivity on the system parameters is shown. The amplitude of Hall conductivity is found to be balanced by a competition between the Zeeman splitting and the spin--orbit splitting.     

Magnetism and Hall effect of the Heusler alloy Co2ZrSn synthesized by melt-spinning process

Magnetization and Hall resistivity have been measured for the Heusler alloy Co₂ZrSn synthesized by the melt-spinning process. The temperature dependence of magnetization follows the spin-wave theory at a low temperature. Abnormal behaviors are observed both in resistance and Hall effect below 8 K. The present Hall resistivity measurement shows that the anomalous Hall effects coexist with normal Hall effects. The negative value of normal Hall coefficient over the whole temperature range reveals that the major charge carriers are electrons. The anomalous Hall coefficient is proportional to the zero-field resistivity, suggesting that magnetic skew scattering is the dominant mechanism in the ferromagnetic regime. The reason for the abnormity below 8 K during transport is discussed.     

Specific features of the Hall effect in Cr/Co bilayer films

The Hall effect and magnetoresistance in Cr(50 Å)/Co(200 Å) bilayer films prepared by ion sputtering on a silicon substrate are investigated at room temperature. The planar Hall effect revealed in the bilayer films differs from the planar Hall effect observed usually in that it is symmetric with respect to the sign of the change in the rotation angle of the magnetic moment in the film plane. Under conditions where the symmetric planar Hall effect is realized, the change in the Hall resistance is more than 10% and exceeds the anisotropic magnetoresistance by two orders of magnitude. The hysteresis loops are measured at different orientations of magnetic fields. The planar Hall effect is studied in a weak longitudinal magnetic field. The results obtained demonstrate that the symmetric planar Hall effect is associated with the multidomain structure of the cobalt film in Cr/Co bilayer composites.     

霍尔线位移传感器静态特性的研究

在不同环境温度下,互换霍尔位移传感器的输入/输出端,对其静态特性进行实验测试。结果表明：在霍尔元件顺、反接及不同的环境温度下,其静态特性差异明显,从理论上对实验现象进行了分析。     

Ab initio calculation of the intrinsic spin Hall effect in semiconductors

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [approximately 100(planck/e)(Omega cm)(-1)], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the ac spin Hall conductivity is large in pure as well as doped semiconductors.     

Theory of the phonon Hall effect in paramagnetic dielectrics

Based upon Raman spin-lattice interaction, we propose a theoretical model for the phonon Hall effect in paramagnetic dielectrics, which was discovered recently in an experiment [C. Strohm, G. L. J. A. Rikken, and P. Wyder, Phys. Rev. Lett. 95, 155901 (2005).]. The phonon Hall effect is revealed to be a phonon analogue to the anomalous Hall effect in electron systems. The thermal Hall conductivity is calculated by using the Kubo formula. Our theory reproduces the essential experimental features of the phonon Hall effect, including the sign, magnitude, and linear magnetic field dependence of the thermal Hall conductivity.     

Comments on the equilibrium theory of the quantum hall effect

The relation between the thermal equilibrium Hall conductivity generated by minimal gauge transformation and the isolated Hall conductivity given by the Kubo formula is investigated. The contribution of the edge states and some general questions concerning the definition of the equilibrium Hall conductivity are discussed. It is shown that, in the case of an additive electron-impurity system, the two Hall conductivities coincide as long as the Fermi energy is situated in an energy gap.     

Quantum theory of the Hall effect

We discuss a model of both the classical and the integer quantum Hall effect which is based on a semiclassical Schrödinger-Chern-Simons action, where the Ohm equations result as equations of motion. The quantization of the classical Chern-Simons part of action under typical quantum Hall conditions results in the quantized Hall conductivity. We show further that the classical Hall effect is described by a theory which arises as the classical limit of a theory of the quantum Hall effect. The model also explains the preference and the domain of the edge currents on the boundary of samples.     

Effect of Hall and ion-slip on the peristaltic transport of nanofluid: A biomedical application

The peristaltic flow of viscous nanofluid in a channel with compliant walls is examined. The flow analysis is presented in the presence of Hall and ion-slip effects. The resulting equations through long wavelength and low Reynolds number approaches are solved. Stream function is obtained in closed form. Attention has been given to the influence of Brownian motion, thermophoresis and Hall and ion slip parameters on the velocity, temperature and concentration profiles. The results show an affective increase in the temperature and nanoparticles concentration with the increase in the strength of Brownian motion effects. Similar results are observed for Hall and ion slip parameters. Further heat transfer coefficient is an increasing function of Hall and ion-slip parameters. Also decrease in the size of trapped bolus is shown for Hall and ion-slip parameters.