Superhard coatings — Production and analysis

In the development of diamond and c-BN products the analytical methods for characterizing the surface, bulk and interface of the diamond coatings are very important. SEM, Raman, XRD and IR are the methods used for characterization and SIMS, TEM, AES, NRA, RBS, XPS, STM, etc. are used for the investigation of special problems. The techniques for diamond and c-BN production are briefly summarized to give an idea of the complex interactions between production, application and analytical characterization. The analytical methods for diamond characterization and many relevant results are summarized in this paper; some physical properties (e.g. thermal conductivity, transparency, etc.) and their interaction with applications are also discussed.Abbreviations AES Auger electron spectroscopy - AFM atomic force microscopy - c-BN cubic boron nitride - CL cathodoluminescence - CVD chemical vapour deposition - EELS electron energy loss spectroscopy - EPMA electron probe microanalysis - ERDA elastic recoil detection analysis - h-BN hexagonal boron nitride - HP-HT high-pressure high-temperature - HF hot-filament - IR infra-red - LEED low energy electron diffraction - MW microwave - NAA neutron activation analysis - NRA nuclear reaction analysis - PL photoluminescence - PVD physical vapour deposition - RBS Rutherford backscattering spectrometry - RHEED reeflected high energy electron diffraction - SAD selected area diffraction - SEM scanning electron microscopy - SIMS secondary ion mass spectrometry - STM secondary ion mass spectrometry - TEM transmission electron microscopy - TMB trimethylborate - XPS X-ray photoelectron spectroscopy - XRD X-ray diffraction Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Quantitative AES,XPS and RBS determination of intergranular bismuth coverage in copper bicrystals at 500 °C

We report on a comparative measurement of intergranular bismuth coverage on a copper substrate using Auger electron spectroscopy (AES), x‐ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). Bicrystalline copper samples were put in presence of bismuth vapour at 500 °C (consequently embrittled by the grain‐boundary penetration of Bi atoms), water‐quenched and subsequently fractured at room temperature. Each fracture surface was analysed by AES, XPS and RBS with the help of quantitative procedures developed for each of the three techniques. All possible sources of discrepancy were carefully examined. The combined quantitative approaches have led to excellent agreement. Such a good agreement constitutes a necessary condition to begin a critical discussion on the mechanisms potentially involved in the liquid metal embrittlement (LME) phenomenon. Copyright © 2005 John Wiley & Sons, Ltd.     

Surface cosegregationp phenomena on alloys and steels: Structural features and phase transitions

In recent years surface cosegregation phenomena have been studied on various alloy and steel surfaces using surface sensitive techniques such as Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), x-ray photoelectron diffraction (XPD) and low energy electron diffraction (LEED). Surface cosegregation causes the formation of two-dimensional surface compounds which may be stabilized by epitaxy on substrate surfaces of suitable structure and orientation. It has been found that in many cases surface compounds undergo phase transitions which are reviewed in this short report.     

合金电子谱定量分析中离子溅射修正因子的研究

离子溅射修正是电子谱(俄歇电子谱,AES和X射线光电子谱,XPS)、离子谱(二次离子质谱,SIMS和低能离子散射谱,ISS)定量分析中的关键问题之一。本文根据作者最近提出的离子轰击合金表面成分再分布关系,得到了表面分析中离子溅射修正因子的分析表达式,总结了近十多年来合金离子溅射修正因子的一些较普遍的实验结果,用本文报道的计算关系较好地解释了这些实验结果。讨论了溅射修正因子受轰击离子参数(入射角、能量)、组分浓度等因素的影响。同时用本文给出的分析计算关系讨论了择优溅射、离子辐照诱导偏析和增强扩散效应对溅射修正因子的影响。     

Automatic spike correction using UNIFIT 2020

The improvement of the software UNIFIT 2020 from an analysis processing software for photoelectron spectroscopy (XPS) only to a powerful tool for XPS, Auger electron spectroscopy (AES), X-ray absorption spectroscopy (XAS), and Raman spectroscopy requires new additional programme routines. Particularly, the implementation of the analysis of Raman spectra needs a well-working automatic spike correction. The application of the modified discrete Laplace operator method allows for a perfect localization and correction of the spikes and finally a successful peak fit of the spectra. The theoretical basis is described. Test spectra allow for the evaluation of the presented method. A comparison of the original and spike-corrected real measurements demonstrates the high quality of the method used.     

Summary of ISO/TC 201 Standard: XX ISO 18118: 2004 – Surface chemical analysis – Auger electron spectroscopy and X‐ray photoelectron spectroscopy – Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials

ISO 18118 provides guidance on the measurement and use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials by Auger electron spectroscopy (AES) and X‐ray photoelectron spectroscopy (XPS). This article provides a brief summary of this International Standard. Copyright © 2005 John Wiley & Sons, Ltd.     

X-ray and electron induced Auger processes for I2 adsorption on uranium

The accurate determination of the kinetic energy of X-ray induced Auger electrons, which is necessary in XPS experiments, e.g. for calculating the Auger parameter, is sometimes hampered by peak interferences or by the high secondary electron background. The latter is of special importance for low kinetic energy electrons like e.g. the U(OPV) and U(OVV) Auger electrons. These problems can be circumvented by using electron induced Auger transitions (AES). However, since XPS and AES use different reference points for the energy scales, both scales have to be matched. This can be done by measuring the kinetic energy of an appropriate Auger transition in XPS and relating this value to the maximum of the second derivative of the same peak in AES.     

Interfacial characterization of chemical solution‐deposited thin films of PbSe on GaAs(100)

The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high‐resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x‐ray photoelectron spectroscopy (XPS) and energy‐filtered TEM. The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga₂O₃ at the PbSe/GaAs interface. Copyright © 2008 John Wiley & Sons, Ltd.     

Characterization of molybdenum carbide nanoparticles formed on Au(111) using reactive-layer assisted deposition

Temperature programmed desorption (TPD), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and scanning tunneling microscopy (STM) have been used to characterize molybdenum carbide nanoparticles prepared on a Au(111) substrate. The MoC(x) nanoparticles were formed by Mo metal deposition onto a reactive multilayer of ethylene, which was physisorbed on a Au(111) substrate at low temperatures (<100 K). The resulting clusters have an average diameter of approximately 1.5 nm and aggregate in the fcc troughs located on either side of the elbows of the reconstructed Au(111) surface. Core level XPS shows that the electronic environment of the Mo and C atoms in the nanoparticles is similar to that found in Mo(2)C(0001) single crystals and carburized Mo metal surfaces. Peak intensities in XPS and AES spectra were used to estimate an average Mo/C atomic ratio of 1.2 +/- 0.3 for nanoparticles annealed above 600 K.     

电化学方法测定氢在TiNi貯氢合金中的扩散系数

在20±0.3 ℃时, 用电化学方法测得氢在TiNi贮氢合金中的扩散系数为(6.45±0.78)×10~(-7)cm~2sec~(-1), 氢在这种合金中扩散过程的活化能为16.59 kJ mol~(-1)。TiNi合金电极在NaOH溶液中, 经过多次电化学渗氢以后, 在合金表面覆盖着一层钛的氧化物, 在这氧化物层的下面为富镍层。     

Understanding delamination in microelectronic devices using AES,XPS and chemometrics

The recent development of XPS instrumentation with near‐micron spatial resolution has advanced the capability of elemental and chemical‐state imaging accompanied by small‐area analysis (down to 15 µm). In this paper, the combined use of X‐ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) at enhanced spatial resolution is shown to have significantly improved the understanding of interfacial delamination and related problems encountered in the production of electronic devices in the field of microelectronics. An example of the application of surface analysis for ITO/Mo adhesion problems will be presented. The mathematical procedure using principal component analysis (PCA) in the reduction of noise in XPS images will also be described. The dramatic improvements in the image contrast and chemical component determination from multispectral image data sets will be presented. This study is intended to explore the contributions given by advanced surface analysis tools to solve real‐world problems. Copyright © 2007 John Wiley & Sons, Ltd.     

Temperature-dependent electronic and vibrational structure of the 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)amide room-temperature ionic liquid surface: a study with XPS, UPS, MIES, and HREELS

The near-surface structure of the room-temperature ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)amide has been investigated as a function of temperature between 100 and 620 K. We used a combination of photoelectron spectroscopies (XPS and UPS), metastable induced electron spectroscopy (MIES), and high-resolution electron energy loss spectroscopy (HREELS). The valence band and HREELS spectra are interpreted on the basis of density functional theory (DFT) calculations. At room temperature, the most pronounced structures in the HREELS, UPS, and MIES spectra are related to the CF3 group in the anion. Spectral changes observed at 100 K are interpreted as a change of the molecular orientation at the outermost surface, when the temperature is lowered. At elevated temperatures, early volatilization, starting at 350 K, is observed under reduced pressure.     

Surface characterisation of laser irradiated SiC ceramics by AES and XPS

Samples of sintered silicon carbide (SSiC) were irradiated with a KrF excimer laser (λ = 248 nm) at energy densities of 10, 15 and 25 J/cm² in He atmosphere. The composition of the near surface region was investigated by Auger electron spectroscopy (AES) and photoelectron spectroscopy (XPS) after lapping, laser irradiation and tribological treatment, respectively. By laser irradiation a surface layer is formed which contains about 30% oxygen. The existence of different bonding states of Si, C and O was established by factor analysis of the AES depth profiles and by XPS. By laser irradiation SiC is decomposed and a siliconoxycarbide with the average composition SiC_3.5O_1.5 is formed. Beneath the oxidised surface layer the nominal elemental composition SiC is found but the sample represents a mixture of Si, graphite and siliconoxycarbide with a small amount of SiC only. Obviously, the decomposition zone exceeds in a depth > 300 nm.     

Compositional and electrical properties of Cr,Nb, Cr/Nb,CrNbN, and CrN/NbN multilayers grown using the d.c. magnetron sputtering technique

Cr, Nb, Cr/Nb, CrN_x, NbN_x, CrNbN, and (CrN/NbN)_n structures were produced on Si and glass substrates, using the d.c. magnetron sputtering technique. Compositional analysis, based on binding energies of Cr, Nb, and N, was carried out by means of X-ray photoelectron spectroscopy (XPS). Through Auger electron spectroscopy (AES), depth profiles were obtained, allowing to demonstrate the multilayers production. Surface morphological characteristics, as roughness and grain size, were evaluated by atomic force microscopy (AFM), revealing very smooth surfaces, that is a consequence of the deposition parameters used in the synthetization experiments. Finally, for different configurations, conductivity measurements were carried out, revealing the influence of nitrogen content and temperature on electron transport. It was found that substoichiometric nitrides (CrN_0.35 and NbN_0.12) exhibited the highest conductivity, because the nitrogen atoms act as donor of electrons.     

Summary of ISO/TC 201 Standard: ISO 29081: 2010, surface chemical analysis—Auger electron spectroscopy—reporting of methods used for charge control and charge correction

This international standard specifies the minimum amount of information required for describing the methods of charge control and charge correction in measurements of Auger electron transitions from insulating specimens by electron‐stimulated AES to be reported with the analytical results. Information is provided in an Annex on methods that have been found useful for charge control prior to or during AES analysis. The Annex also includes a summary table of methods or approaches, ordered by simplicity of approach. A similar international standard has been published for XPS (ISO 19318: 2003(E), Surface chemical analysis—XPS—reporting of methods used for charge control and charge correction. Copyright © 2010 John Wiley & Sons, Ltd.     

Evaluation of elastic‐scattering cross sections for electrons and positrons over a wide energy range

Quantification of surface‐ and bulk‐analytical methods, e.g. Auger‐electron spectroscopy (AES), X‐ray photoelectron spectroscopy (XPS), electron‐probe microanalysis (EPMA), and analytical electron microscopy (AEM), requires knowledge of reliable elastic‐scattering cross sections for describing electron transport in solids. Cross sections for elastic scattering of electrons and positrons by atoms, ions, and molecules can be calculated with the recently developed code ELSEPA (Elastic Scattering of Electrons and Positrons by Atoms) for kinetic energies of the projectile from 10 eV to 50 eV. These calculations can be made after appropriate selection of the basic input parameters: electron‐density distribution, a model for the nuclear‐charge distribution, and a model for the electron‐exchange potential (the latter option applies only to scattering of electrons). Additionally, the correlation‐polarization potential and an imaginary absorption potential can be considered in the calculations. We report comparisons of calculated differential elastic‐scattering cross sections (DCSs) for silicon and gold at selected energies (500 eV, 5 keV, 30 keV) relevant to AES, XPS, EPMA, and AEM, and at 100 MeV as a limiting case. The DCSs for electrons and positrons differ considerably, particularly for medium‐ and high‐atomic‐number elements and for kinetic energies below about 5 keV. The DCSs for positrons are always monotonically decreasing functions of the scattering angle, while the DCSs for electrons have a diffraction‐like structure with several minima and maxima. A significant influence of the electron‐exchange correction is observed at 500 eV. The correlation‐polarization correction is significant for small scattering angles at 500 eV, while the absorption correction is important at energies below about 10 keV. Copyright © 2005 John Wiley & Sons, Ltd.     

RuB-PEG催化剂对喹啉加氢性能研究

以PEG做稳定剂制备了RuB非晶态纳米催化剂.采用X射线衍射(XRD)、X射线光电子能谱(XPS)、透射电镜(TEM)和等离子发射光谱(ICP)对催化剂进行了表征.结果表明,RuB以高分散态存在,其中金属钌的平均粒径约为2.4 nm.该研究考察了聚合度、溶剂、催化剂用量、催化剂中硼钌比、压强和添加剂等因素对喹啉加氢反应...     

Electrochemical self-assembly of alkanethiolate molecules on Ni(111) and polycrystalline Ni surfaces

In this work, the electrochemical formation of alkanethiolate self-assembled monolayers (SAMs) on Ni(111) and polycrystalline Ni surfaces from alkanethiol-containing aqueous 1 M NaOH solutions was studied by combining Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), electrochemical techniques, and density functional theory (DFT) calculations. Results show that alkanethiolates adsorb on Ni concurrent with NiO electroreduction. The resulting surface coverage depends on the applied potential and hydrocarbon chain length. Electrochemical and XPS data reveal that alkanethiolate electroadsorption at room temperature takes place without S-C bond scission, in contrast to previous results from gas-phase adsorption. A complete and dense monolayer, which is stable even at very high cathodic potentials (-1.5 V vs SCE), is formed for dodecanethiol. DFT calculations show that the greater stability against electrodesorption found for alkanethiolate SAMs on Ni, with respect to SAMs on Au, is somewhat related to the larger alkanethiolate adsorption energy but is mainly due to the larger barrier to interfacial electron transfer present in alkanethiolate-covered Ni. A direct consequence of this work is the possibility of using electrochemical self-assembly as a straightforward route to build stable SAMs of long-chained alkanethiolates on Ni surfaces at room temperature.     

Ba deposition and oxidation on theta-Al2O3/NiAl(100) ultrathin films. Part I: Anaerobic deposition conditions

Room-temperature Ba deposition on an oxygen-terminated theta-Al(2)O(3)/NiAl(100) ultrathin film substrate under ultrahigh vacuum (UHV) conditions is studied using X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD) techniques. In addition, Ba oxidation by the ions of the alumina substrate at 300 K < T < 1200 K in the absence of a gas-phase oxidizing agent is investigated. Our results indicate that at room temperature Ba grows in a layer-by-layer fashion for the first two layers, and Ba is partially oxidized. Annealing at T < 700 K results in further oxidation of the Ba species, whereas annealing at higher temperatures leads to loss of Ba from the surface via desorption and subsurface diffusion.     

Quantitative Analysis of Ti-Si-Ge/Si-Ge/Si Structures by EDS and AES

 A method for quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures with submicron thick layers by energy dispersive spectroscopy (EDS) in transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) was developed. Quantitation of the results of both AES and EDS techniques was performed on the basis of a single reference specimen for the Ti-Si-Ge system comprising a uniform layer of the Ti(Si_0.85Ge_0.15)₂ phase on a silicon substrate. The reference sample was prepared by the same procedure as the samples used in the study, and was thoroughly characterized by X-ray diffractometry, transmission electron microscopy and energy dispersive spectroscopy in scanning electron microscopy. Using this reference sample the elemental sensitivity factors relative to Si were found for both techniques, which enable us to obtain the elemental depth distributions for the studied samples. Good agreement between the results obtained by EDS/TEM, AES and supplementary techniques was found.