Initial growth mechanism of atomic layer deposition of ZnO on the hydroxylated Si(1 0 0)-2×1: A density functional theory study

Density functional theory (DFT) is employed to investigate the initial growth mechanism of atomic layer deposition (ALD) of ZnO on the hydroxylated silicon surfaces. Both the diethylzinc (DEZn) and the H₂O half-reactions proceed through an analogous trapping-mediated mechanism. By comparison of the reactions on silicon surfaces with single and double hydroxyl sites, we find that the existence of neighboring hydroxyl can facilitate the adsorption of DEZn and lower the activation barrier. Also, we find that it is both thermodynamically and kinetically more favorable for the reactions on silicon surfaces with double hydroxyl sites. In addition, calculations show that the DEZn half-reaction is more favorable as compared to the H₂O half-reaction.     

Surface reaction mechanism of atomic layer deposition of HfO2 on Ge(1 0 0)-2 × 1: A density functional theory study

Density functional theory is employed to investigate atomic layer deposition mechanism of HfO₂ on Ge(1 0 0)-2 × 1 surface. Both the HfCl₄ and H₂O half-reactions proceed through an analogous trapping-mediated mechanism. The neighboring hydroxyl in the reaction of HfCl₄ with two Ge-OH* sites has a major effect on the formation of HfCl₄ adsorbed complex. In addition, both the Ge and Si reaction pathways are qualitatively similar, however, adsorption of HfCl₄ is favorable on Ge than on Si surface hydroxyl sites. By comparison of the reactions of H₂O on the different surfaces, the differences in energy are negligible to alter the reaction mechanism.     

Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(1 0 0) surfaces: A comparative study by density functional theory

The surface reactions in atomic layer deposition (ALD) of HfO₂, ZrO₂ and Al₂O₃ on hydroxylated and sulfur-passivated GaAs surfaces are compared by using density functional theory. The HfCl₄ and ZrCl₄ half-reactions show large similarities in energetics and geometrical structure. However, both of them show large discrepancies with the Al(CH₃)₃ (TMA) half-reaction. Calculations find that it is more energetically favorable for the Al₂O₃ deposition than the HfO₂ and ZrO₂ deposition at the initial ALD stage. In addition, calculations find that although the GaAs passivation with sulfur helps to improve the interfacial properties, it is both kinetically and thermodynamically less favorable.     

Surface reaction mechanism of Y2O3 atomic layer deposition on the hydroxylated Si(1 0 0)-2 × 1: A density functional theory study

The surface reaction mechanism of Y₂O₃ atomic layer deposition (ALD) on the hydroxylated silicon surface is investigated by using density functional theory. The ALD process is designed into two half-reactions, i.e., Cp₃Y (Cp = cyclopentadienyl) and H₂O half-reactions. For the Cp₃Y half-reaction, the chemisorbed complex is formed along with the change of metal-Cp bonding from Y-C(π) to Y-C₁(σ). For the H₂O half-reactions, the chemisorbed energies are increased with the relief of steric congestion around yttrium metal center. In addition, Gibbs free energy calculations show that it is thermodynamically favorable for the Cp₃Y half-reactions. By comparing with the reaction of H₂O with {Si}-(O₂)YCp, it is thermodynamically more favorable and kinetically less favorable for the reactions of H₂O with {Si}-OYCp₂ as well as with {Si}-OYCp(OH).     

Film forming kinetics and reaction mechanism of γ-glycidoxypropyltrimethoxysilane on low carbon steel surfaces

The film forming kinetics and reaction mechanism of γ-GPS on low carbon steel surfaces was investigated by FTIR-ATR, AFM, NSS and theoretical calculation method. The results from experimental section indicated that the reaction of γ-GPS on low carbon steel surfaces followed the conventional reaction mechanism, which can be described as reaction (I) (Me (Metal)-OH + HO-Si → Me-O-Si + H₂O) and reaction (II) (Si-OH + Si-OH → Si-O-Si + H₂O). During film forming process, the formation of Si-O-Fe bond (reaction (I)) exhibited oscillatory phenomenon, the condensation degree of silanol monomers (reaction (II)) increased continuously. The metal hydroxyl density had significant influence on the growth mechanisms and corrosion resisting property of γ-GPS films. The results from theoretical calculation section indicated that the patterns of reaction (I) and reaction (II) were similar, involving a nucleophilic attack on the silicon center. The formation of Si-O-Fe bond (reaction (I)) was kinetically and thermodynamically preferred, which had catalytic effect on its condensation with neighboring silanol monomers (reaction (II)). Our DFT calculations were good consistent with the experimental measurements.     

Dissociation of liquid water on defective rutile TiO<Subscript>2</Subscript> (110) surfaces using <Emphasis Type="Italic">ab initio</Emphasis> molecular dynamics simulations

In order to obtain a comprehensive understanding of both thermodynamics and kinetics of water dissociation on TiO₂, the reactions between liquid water and perfect and defective rutile TiO₂ (110) surfaces were investigated using ab initio molecular dynamics simulations. The results showed that the free-energy barrier (~4.4 kcal/mol) is too high for a spontaneous dissociation of water on the perfect rutile (110) surface at a low temperature. The most stable oxygen vacancy (Vo₁) on the rutile (110) surface cannot promote the dissociation of water, while other unstable oxygen vacancies can significantly enhance the water dissociation rate. This is opposite to the general understanding that Vo₁ defects are active sites for water dissociation. Furthermore, we reveal that water dissociation is an exothermic reaction, which demonstrates that the dissociated state of the adsorbed water is thermodynamically favorable for both perfect and defective rutile (110) surfaces. The dissociation adsorption of water can also increase the hydrophilicity of TiO₂.     

Density functional theory study of the NO2-sensing mechanism on a WO3 (0 0 1) surface: the role of surface oxygen vacancies in the formation of NO and NO3

The trapping and detection of nitrogen oxide with tungsten trioxide has become a popular research topic in recent years. Knowledge of the complete reaction mechanism for nitrogen oxide adsorption is necessary to improve detector performance. In this work, we used density functional theory (DFT) calculations to study the adsorption characteristics and electron transfer of nitrogen dioxide on an oxygen-deficient monoclinic WO₃ (0 0 1) surface. We observed different reactions of NO₂ on slabs with different O- and WO-terminated WO₃ (0 0 1) surfaces with oxygen vacancies. Our calculations show that the bridging oxygen atom on an oxygen defect on an O-terminated WO₃ (0 0 1) surface is the active site where an NO₂ molecule is oxidised into nitrate and is adsorbed onto the surface. On a WO-terminated (0 0 1) surface, one of the oxygen atoms from the NO₂ molecule fills the oxygen vacancy, and the resulting NO fragment is adsorbed onto a W atom. Both of these adsorption models can cause an increase in the electrical resistance of WO₃. We also calculated the adsorption energies of NO₂ on slabs with different oxygen-deficient WO₃ surfaces.     

The photochemistry of the self‐healing chromophore Disperse Orange 11

Recent interest in the self‐healing ability of the laser dye 1‐amino‐2‐methylanthraquinone, Disperse Orange 11, has lead us to investigate the possible alternative mechanisms of action, either intramolecular proton transfer (PT) or twisted intramolecular charge transfer (TICT) formation. AMPAC semiempirical PM3 CI (all single excited configurations) potential energy surfaces searches have been conducted with either reaction mechanism. Based purely on the potential energy surface results, no state, S0, T1, or S1, seems especially likely to be kinetically favorable for PT. The T1 state is favorable thermodynamically for PT. However, the S1 state TICT reaction is both thermodynamically favorable and kinetically preferred over all PT reactions. There is also a favorable T1 TICT reaction, but much slower kinetically on the triplet surface than S1 TICT. The Wentzel–Kramers–Brillouin (WKB) method has been used to ascertain proton tunneling contributions to PT. Even with proton tunneling, S1 TICT is still more highly favored, though proton tunneling could make the T1 PT reaction competitive depending on the rate of intersystem crossing. We also examine spectroscopic properties of PT transfer and TICT reaction path entities in comparison with published experimental evidence. However, this comparison leads to ambiguous findings that suggest that electronic spectral properties alone will not fully clarify the mechanism. Overall, results suggest that the TICT mechanism is the most likely for optical damage and self‐repair for Disperse Orange 11, and might be considered for the damage and repair mechanisms for other organic solid state laser materials. Copyright © 2012 John Wiley & Sons, Ltd.     

First-principles studies of H2S adsorption and dissociation on metal surfaces

Density functional theory calculations were employed to investigate the molecular and dissociative adsorption of H₂S on the closed packed surfaces of a number of important noble metals (Ag(1 1 1), Au(1 1 1) and Cu(1 1 1)) and transition metals (Ir(1 1 1), Ni(1 1 1), Pd(1 1 1) and Pt(1 1 1)). Energy minima corresponding to adsorbed states were identified with H₂S binding preferentially at the top sites. The adsorption of other S moieties (SH and S) was also examined. SH and S were found to prefer bridge sites and hollow sites, respectively. The binding of H₂S and its S-containing dissociated species is stronger on the transition metals. The elementary reactions of abstraction of H from H₂S to form a surface SH intermediate and abstraction of H from SH to form a surface S intermediate as model pathways for the dissociation of H₂S were examined. Our results suggest that H₂S decomposition on the aforementioned transition metal surfaces is more facile, both thermodynamically and kinetically.     

First-principles studies: Thiolated Au2Cr and Au6Cr clusters

The structural, energetic and magnetic properties of thiol-passivating Au₂Cr and Au₆Cr clusters are investigated by performing first-principles calculation based on density functional theory. We find that the adsorption of thiolate is energetically more favorable than thiol and that the thiolates favor “top” site adsorption on Cr atom in one methanethiolate adsorbed Au₂Cr cluster while they favor “bridge” site adsorption on top of the middle point of Cr–Au bonds in three methanethiolates adsorbed Au₂Cr cluster. In thiol-passivating Au₆Cr cluster, the thiol favor “top” site adsorption on top of atom Au while the thiolate favor “bridge” site adsorption on top of the middle point of Au–Au bonds. The energetics of the reactions indicates that these thiol-passivating Au₂Cr or Au₆Cr clusters can be used as hydrogen storage materials. There are large and positive spin populations on atom Cr. The spin populations of atoms Au, S and H are attributed to both the spin delocalization and the spin polarization mechanisms.     

Adsorption and dissociation of O2 on the Cu2O(1 1 1) surface: Thermochemistry, reaction barrier

The adsorption and dissociation of O₂ on the perfect and oxygen-deficient Cu₂O(1 1 1) surface have been systematically studied using periodic density functional calculations. Different kinds of possible modes of atomic O and molecular O₂ adsorbed on the Cu₂O(1 1 1) surface are identified: atomic O is found to prefer threefold 3Cu site on the perfect surface and O_vacancy site on the deficient surface, respectively. Cu_CUS is the most advantageous site with molecularly adsorbed O₂ lying flatly over singly coordinate Cu_CUS-Cu_CSA bridge on the perfect surface. O₂ adsorbed dissociatively on the deficient surface, which is the main dissociation pathway of O₂, and a small quantity of molecularly adsorbed O₂ has been obtained. Further, possible dissociation pathways of molecularly adsorbed O₂ on the Cu₂O(1 1 1) surface are explored, the reaction energies and relevant barriers show that a small quantity of molecularly adsorbed O₂ dissociation into two O atoms on the deficient surface is favorable both thermodynamically and kinetically in comparison with the dissociation of O₂ on the perfect surface. The calculated results suggest that the presence of oxygen vacancy exhibits a strong chemical reactivity towards the dissociation of O₂ and can obviously improve the catalytic activity of Cu₂O, which is in agreement with the experimental observation.     

甲基和羟基在Ir(111)表面吸附的密度泛函理论研究

在超原胞近似和slab模型基础上,采用周期性密度泛函理论,在0.11覆盖度（ML）下,对甲基与羟基在Ir(111)表面的吸附进行了研究,得到了甲基和羟基在Ir(111)表面不同吸附位置的吸附能和吸附构型,计算了它们的振动频率,同时分析了甲基和羟基共吸附于Ir(111)表面的情况。结果表明,甲基和羟基在Ir(111)表面的最稳定吸附位置都是top位,甲基是碳端向下吸附,羟基是通过氧端向下倾斜吸附。通过频率分析发现吸附后CH3中C-H键的对称伸缩振动、反对称伸缩振动以及剪切振动频率均发生了红移,而羟基中的O-H键的振动频率发生蓝移现象。通过计算对比发现甲醇分解为甲基和羟基过程是一个放热反应,从热力学角度来说该反应是可行的。     

H2S在氧化石墨烯表面的吸附和分解的理论研究

用周期性密度泛函方法对H₂S在氧化石墨烯(GO)上的吸附和分解进行了理论计算, 讨论了H₂S和GO上的羟基和环氧基团的反应过程．结果表明,反应过程是通过H₂S或-SH上的H转移使得GO的环氧基开环和羟基氢化,当GO相反面存在羟基时有助于环氧基团的开环和羟基氢化反应．H₂S在GO上吸附和分解到S原子的反应机理中引入了相应的中间态,计算两次脱氢过程能垒分别为3.2和10.4 kcal/mol,第二个H原子的转移是GO还原过程的速率决定步骤．结果还表明GO上的羟基和环氧基团有助于加强S原子和石墨烯的结合．     

甲醛分子在羟基化TiO2-B(100)面吸附的第一性原理研究

利用第一性原理研究TiO₂-B表面上甲醛分子（HCHO）与氧桥位羟基（BH）、钛顶位羟基（TH）共吸附时羟基基团对HCHO分子吸附的影响.结果表明：这两种羟基的存在对HCHO在清洁和羟化表面形成多种化学吸附构型产生不同影响.与HCHO分子共吸附时，氧桥位羟基弱化HCHO的吸附；而钛顶位羟基强化HCHO的吸附，且在不同面积超胞上均能显著强化其吸附.利用电子结构分析不同吸附的内在机制，为理解HCHO分子与TiO₂基材料表面的相互作用提供新的视角.     

Adsorption and dissociation of ammonia on Au(1 1 1) surface: A density functional theory study

Periodic density functional theory (DFT) calculations using plane waves had been performed to systematically investigate the stable adsorption amine and its dehydrogenated reaction on Au(1 1 1) surface. The equilibrium configuration including on top, bridge, and hollow (fcc and hcp) sites had been determined by relaxation of the system. The adsorption both NH₃ on top site and NH₂ on bridge site is favorable on Au(1 1 1) surface, while the adsorption of NH on hollow (fcc) site is preferred. The adsorbates are adsorbed on the gold surface with the interaction between p orbital of adsorbate and the d orbital of gold atoms. The interaction between adsorbate and gold slab is more evident on the first layer than on any others. Furthermore, the dissociation reaction of NH₃ on clean gold surface, as well as on the pre-covered oxygen atom and pre-covered hydroxyl group surface had been investigated. The results show that the dehydrogenated reaction energy barrier on the pre-covered oxygen gold surface is lower. The adsorbed O can promote the dehydrogenation of amine. Additionally, OH as the product of the NH₃ dissociation reaction participates in continuous dehydrogenation reaction, and the reaction energy barrier is the lowest (22.77 kJ/mol). The results indicated that OH_ads play a key role in the dehydrogenated reaction on Au(1 1 1) surface.     

First-principles calculations of precursor adsorption on substrate during atomic layer deposition: The example of SiO2 deposition using tris(dimethylamino)silane

In this study, we investigate the reaction mechanisms of precursor adsorption during the atomic layer deposition (ALD) using density functional theory (DFT) calculations and ideal-gas methods; herein, we considered adsorption of tris(dimethylamino)silane (TDMAS) on a hydroxylated SiO₂ surface to be the example for our investigation. When the reaction free energy is calculated, the DFT results obtained at 0 K suggest that the dissociation of a hydrogen atom from TDMAS is favorable upon TDMAS adsorption, which is inconsistent with the experimental results where one dimethylamino group is released. The experimental results can be accurately predicted when enthalpy and entropy changes are considered at elevated temperatures, thereby indicating the significance of finite-temperature effects in free-energy changes for solid-gas reactions. We analyze the changes in enthalpy and entropy and find that dimethylamine is a more favorable gaseous product than H₂ owing to its larger translational and rotational entropy.     

A density functional theory study on the adsorption and dissociation of N2O on Cu2O(1 1 1) surface

Density functional theory has been employed to investigate the adsorption and the dissociation of an N₂O at different sites on perfect and defective Cu₂O(1 1 1) surfaces. The calculations are performed on periodic systems using slab model. The Lewis acid site, Cu_CUS, and Lewis base site, O_SUF are considered for adsorption. Adsorption energies and the energies of the dissociation reaction N₂O → N₂ + O(s) at different sites are calculated. The calculations show that adsorption of N₂O is more favorable on Cu_CUS adsorption site energetically. Cu_CUS site exhibits a very high activity. The Cu_CUS-N₂O reaction is exothermic with a reaction energy of 77.45 kJ mol⁻¹ and an activation energy of 88.82 kJ mol⁻¹, whereas the O_SUF-N₂O reaction is endothermic with a reaction energy of 205.21 kJ mol⁻¹ and an activation energy of 256.19 kJ mol⁻¹. The calculations for defective surface indicate that O vacancy cannot obviously improve the catalytic activity of Cu₂O.     

First principles study of oxygen adsorption on nickel-doped graphite

Density functional theory is used in a spin-polarized plane wave pseudopotential implementation to investigate molecular oxygen adsorption and dissociation on graphite and nickel-doped graphite surfaces. Molecular oxygen physisorbs on graphite surface retaining its magnetic property. The calculated adsorption energy is consistent with the experimental value of ?0.1?eV. It is found that substituting a carbon atom of the graphite surface by a single doping nickel atom (2.8% content) makes the surface active for oxygen chemisorption. It is found that the molecular oxygen never adsorbs on doping nickel atom while it adsorbs and dissociates spontaneously into atomic oxygens on the carbon atoms which are bound to the nickel. The adsorption energy of ?1.4?eV and zero activation energy barrier indicate that O₂ dissociative adsorption is both thermodynamically and kinetically favoured over the surface. The large electric field near the doping nickel atom along with the excess electrons on the neighbouring carbon atoms, which are bound to the nickel induce molecular oxygen to adsorb and dissociate favourably.     

Relaxation structure analysis of Li inserted γ-Fe2O3

γ-Fe₂O₃ has a spinel structure with cation vacancy and is expected to perform as a favorable electrode material for secondary lithium-ion battery. When lithium is inserted electrochemically into γ-Fe₂O₃, prolonged potential change is observed after the insertion. In this study, we inserted various amount of Li into γ-Fe₂O₃ (x = 0.66, 1.1, 1.5 in terms of Li_XFe₂O₃), then made the circuit open, measured X-ray diffraction (XRD) patterns at various elapsed time, and analyzed the crystal structure change of γ-Fe₂O₃ with time by the Rietveld method. The X-ray Rietveld analysis revealed that the iron occupancy of 8a site decreased and that of 16c site increased with lithium insertion process and after lithium insertion, the iron occupancy of 8a site increased and that of 16c site decreased gradually with relaxation time. It is indicated that lithium prefer 8a site to occupy kinetically, on the other hand, prefer 16c site thermodynamically.     

FeO+催化N2O与CO反应的密度泛函理论研究

本文采用密度泛函理论DFT-B3LYP方法6-311+G(2d) 的基组, 计算研究了气相中六重态和四重态FeO+离子催化N2O和CO生成N2和 CO2反应的微观机理, 通过计算两种重态金属离子亲氧性（OA）, 从热力学方面说明了主题反应的可行性。分析反应过程的热力学性质和动力学因素得到FeO+与N2O复合生成反应复合物, 之后继续与CO复合成中间体是能量有利反应路径,所得结果与实验观测相符.