H2O在SrTiO3-(001)TiO2表面上吸附和解离的密度泛函理论研究

利用密度泛函理论研究了0.25单层（ML）,0.5ML,0.75ML和1ML吸附率下H₂O在SrTiO₃-（001）TiO₂表面上的吸附行为.比较了不同吸附率下分子吸附和解离吸附的稳定性,利用微动弹性带（nudged elastic band）方法计算了H₂O的解离势垒.结果表明：在低吸附率（0.25ML和0.5ML）时,H₂O表现为解离吸附;在0.75ML吸附率下,分子吸附和解离吸附同时存在;而在全吸附（吸附率为1ML）时,分子吸附更稳定.基于对H₂O分子与表面之间以及H₂O分子之间的电荷转移和相互作用的分析,讨论了吸附率对H₂O吸附和解离的影响. 关键词： 2O')" href="#">H₂O 吸附 3-（001）TiO₂表面')" href="#">SrTiO₃-（001）TiO₂表面 密度泛函理论     

I掺杂金红石TiO$lt;sub$gt;2$lt;/sub$gt;(110)面的第一性原理研究

利用基于密度泛函理论的第一性原理研究了I掺杂金红石TiO₂（110）表面的形成能和电子结构,分析了不同掺杂位置的结构对TiO₂光催化性能的影响. 计算表明,氧化环境下I最容易替代掺杂表面五配位的Ti,而还原环境下最容易替代掺杂表面的桥位氧. I替位Ti或I替位O都能降低禁带宽度,可能使TiO₂吸收带出现红移现象或产生在可见光区的吸收,其中I替位桥位氧的禁带宽度最小. 吸收光谱表明,I掺杂不仅能提高TiO₂可见光响应,同时可增加紫外光的吸收能量,提高其可见光及紫外光下的光催化性能. 关键词： 第一性原理 I掺杂 2(110)')" href="#">金红石相TiO₂(110) 光催化     

过渡金属Cu、Cr掺杂TiO2表面氧化性气体NO2光学气敏传感特性

采用密度泛函理论（DFT）体系广义梯度近似（GGA）第一性原理平面波超软赝势方法,分析锐钛矿型TiO₂（101）表面吸附NO₂分子光学气敏传感的微观机理.结果表明：Cu和Cr原子易于掺入TiO₂（101）表面,掺杂表面能稳定地吸附NO₂分子且吸附后光学性质发生显著变化.表面吸附NO₂分子后,Cu掺杂TiO₂（101）表面对分子的吸附能最大,吸附后结构更稳定,分子与表面的距离最短.通过分析差分电荷密度和电荷布居数发现,NO₂分子与基底表面间发生电荷转移,转移电子数目：Cu掺杂表面 > Cr掺杂表面 > 无掺杂表面.对比吸收光谱和反射光谱发现,在Cu掺杂表面吸附分子后,光学性质变化最明显,说明表面与吸附分子间氧化还原能力是决定光学气敏传感性能的核心因素.在过渡金属中,Cu与Cr都有4s价电子结构,其4s电子降低了材料表面氧空位的氧化性,增加了其还原性.对于氧化性气体,可以提升表面与分子的氧化还原作用,而Cu的4s电子更加活泼,从而光学气敏传感特性更加明显.因此,Cu掺杂的TiO₂对氧化性气体是一种较好的光学气敏传感材料.     

基于第一性原理的石墨吸附一氧化碳倾向性研究

利用基于量子力学的第一性原理计算方法,从微观角度研究煤层对一氧化碳气体的吸附机理.根据煤层的基本成分及结构特点,用结构类似的石墨模拟复杂的煤层,建立石墨吸附一氧化碳分子的模型,讨论石墨表面的三种高对称吸附位置,分别是顶位（top位）、桥位（bridge位）、洞位（hollow位）对一氧化碳分子的吸附.结果表明：当一氧化碳分子垂直于石墨表面,且碳原子端靠近碳层时,在石墨（001）表面的桥位（bridge位）有较强的吸附能.     

H2O分子在Fe（100）, Fe（110）, Fe（111）表面吸附的第一性原理研究

采用第一性原理研究了H₂O分子在Fe（100）,Fe（110）,Fe（111）三个高对称晶面上的表面吸附.结果表明,H₂O分子在三个晶面上的最稳定结构皆为平行于基底表面的顶位吸附结构.H₂O分子与三个晶面相互作用的吸附能及几何结构计算结果表明H₂O分子与三个晶面的相互作用程度不同,H₂O分子与Fe（111）晶面的相互作用最强,其次是Fe（100）,相互作用最弱的是Fe（110）表面,而这与晶面原子 关键词： 第一性原理 Fe单晶表面 2O分子')" href="#">H₂O分子 分子吸附     

含锰钢表面氢原子/氢分子吸附行为的第一性原理研究

采用基于密度泛函理论的第一性原理方法研究了氢原子和氢分子在纯铁表面和锰原子掺杂表面的吸附与解离行为.研究结果表明,氢原子可在纯铁(001)表面稳定吸附,吸附能按照顶位,桥位和心位依次增强;而溶质原子锰降低了氢原子距离表面的位置并强化了氢原子的吸附行为.氢分子在纯铁表面的吸附解离行为取决于氢分子距离模型表面的初始距离和初始空间构型.氢分子平行于纯铁(001)表面时,距离心位1.2?发生解离,而桥位、顶位均不会发生解离;氢分子垂直放置时,距离桥位0.6?、顶位1.0?发生解离,心位不会发生解离.氢分子平行于锰掺杂纯铁(001)表面时,距离桥位0.6?、顶位0.7?、心位1.2?发生解离;氢分子垂直放置时,距离桥位、心位0.8?发生解离,而顶位放置氢分子不发生解离.归纳可知,锰溶质原子掺杂会增加铁基体表面氢原子和氢分子的吸附作用并促进氢分子发生分解.     

锐钛矿相TiO2(101)表面对有机分子不同官能团微观吸附的机制

挥发性有机化合物(VOCs)严重危害了生态环境和人体健康,因此对具有典型官能团的VOCs气体进行灵敏检测具有重要意义.文章研究了具有典型官能团的VOCs气体C₂H₂、C₂H₄、HCOOH、CH₃OH、HCHO和CH₃COCH₃分子在锐钛矿相TiO₂(101)表面吸附的传感特性.结果表明：具有氧空位缺陷的表面对极性分子吸附时,偶极矩越大,吸附体系越稳定;对非极性分子吸附时,C原子成键饱和程度越低,吸附体系越稳定.分析发现,差分电荷密度和电荷布局体现出偶极矩大小和C原子成键饱和程度对气体分子得失电子能力的影响.对于极性分子,气体分子官能团中O原子得到电子的能力为OCH₃COCH₃>OHCHO>OCH₃OH>OHCOOH;对于非极性分子,官能团中C原子得到电子的能力为CC₂H₂>CC     

H在Al(111)面上吸附的多重散射Xα自洽计算

利用多重散射X_α自洽场方法研究了H在Al(111)表面吸附的桥位和顶位模型。结果表明顶位吸附的结合能优于桥位。顶位吸附中H的1s电子与Al相互作用形成不同形式的σ键,本文分析了这些成键细节,并给出了顶位吸附的态密度。 关键词：     

Cu（001）表面CO吸附的电子结构效应

本文应用Ｒｅｃｕｒｓｉｏｎ方法，计算了ＣＯ在Ｃｕ（００１）表面不同位置（顶位、桥位和空位）吸附的电子结构，分析了ＣＯ与Ｃｕ表面原子之间的键作用。分析表明ＣＯ在顶位吸附时，Ｃｐｘ（ｐｙ）－Ｃｕｄｓ（１号）和Ｃｐｘ（ｐｙ）－Ｃｕｄ２（ｄｓ）（２号）之间存在较强的键作用，这有利于ＣＯ在顶位吸附。桥位和空位吸附时，ＣＯ与表面原子形成的键较弱，是不稳定的。计算结果得到了实验的支持。     

杂质对CO在Ni（100）表面化学吸附位置的影响

在紧束缚近似下，采用ＥＳ模型和格林函数方法，通过对含杂Ｎｉ（１００）表面ＣＯ分子顶位、桥位和心位化学吸附能的计算，讨论了替位杂质对Ｎｉ（１００）表面ＣＯ化学吸附位置的影响。     

Influence of the OH groups of hydroxylated rutile (110) surface on the Lewis acidity: an investigation of CO adsorption by quantum-mechanical simulations

The adsorption of carbon monoxide on a clean and hydroxylated rutile (110) surface has been investigated using a periodic approach at DFT/B3LYP level. The hydroxylated surface was modelled by considering both terminal and bridging OH groups. The variation of the electrophilicity of the Lewis acid site near these groups was evaluated by taking into account the adsorbate–substrate distance, the magnitude of the interaction energy and the blue-shift of the adsorbed CO stretching frequency. The results obtained suggest that the electrophilicity increases in proximity to OH terminal groups, and decreases near the OH bridging groups.     

A DFT study of CO adsorbed on clean and hydroxylated anatase TiO2 (001) surfaces

The adsorbate–substrate interaction between carbon monoxide and clean and hydroxylated surfaces of anatase (001) was simulated by periodic DFT calculations. For the clean surface, different periodicities were taken into account in order to investigate the influence of lateral effects. The results show that the molecule interacts only with the penta-coordinated titanium ion when high surface coverages are employed, whereas it interacts with both the titanium and the di-coordinated oxygen ions when the smallest surface coverage is considered. Adsorption on the hydroxylated surface, which was carried out for the first time, was studied by considering the largest used periodicity and focusing attention on the influence of both the terminal and bridging OH groups. The resulting data show that, in the case of adsorption on the hydroxylated surface, no additional bond between the surface oxygen and the carbon atom is present. Therefore, in a regime of very low surface coverage, the molecule behaves in a very different way when it interacts with a clean or a hydroxylated surface.     

Interactions of HCOOH with stoichiometric and defective TiO2(110) surfaces

Interactions of HCOOH with stoichiometric (nearly defect-free) and defective TiO₂(110) surfaces have been studied experimentally using X-ray photoelectron spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), and theoretically using electronic structure calculations. The HCOOH saturation coverages were 0.58 ML, 0.77 ML, and 0.92 ML (1 ML ≈ 5.2 × 10¹⁴ cm⁻²) for nearly defect-free surfaces, for electron-beam exposed surfaces, and for Ar⁺ ion bombarded surfaces, respectively. The excess formic acid adsorption quantitatively corresponds to the number of newly exposed sites created by electron-beam exposure. Electronic structure calculations show a strong adsorptive interaction for formate on cation sites on both stoichiometric and defective TiO₂ surfaces, consistent with the experimental observations. In spite of adsorption at defect sites, little or no defect healing (defect healing means a reduction in defect signal observed by the photoemission measurements) was observed for either electron-beam exposed or Ar⁺ bombarded surfaces by HCOOH exposure up to 10⁴L at room temperature. However, some healing will occur if extra energy provided by electrons is introduced to breakdown formate species. In contrast to water adsorption, electronic structure calculations on defective TiO₂ have found that formate is located in an asymmetric position with respect to the Ti³⁺ sites with a potential additional interaction with the Ti⁴⁺ site.     

Dissociation of liquid water on defective rutile TiO2 (110) surfaces using ab initio molecular dynamics simulations

In order to obtain a comprehensive understanding of both thermodynamics and kinetics of water dissociation on TiO₂, the reactions between liquid water and perfect and defective rutile TiO₂ (110) surfaces were investigated using ab initio molecular dynamics simulations. The results showed that the free-energy barrier (~4.4 kcal/mol) is too high for a spontaneous dissociation of water on the perfect rutile (110) surface at a low temperature. The most stable oxygen vacancy (V_o1) on the rutile (110) surface cannot promote the dissociation of water, while other unstable oxygen vacancies can significantly enhance the water dissociation rate. This is opposite to the general understanding that V_o1 defects are active sites for water dissociation. Furthermore, we reveal that water dissociation is an exothermic reaction, which demonstrates that the dissociated state of the adsorbed water is thermodynamically favorable for both perfect and defective rutile (110) surfaces. The dissociation adsorption of water can also increase the hydrophilicity of TiO₂.     

Theoretical investigation of hydroxylated oxide surfaces

A self-consistent electronic structure calculation, in the slab geometry, is performed to model the dissociative adsorption of water on several oxide surfaces in the limit of complete saturation. We discuss the adsorption characteristics along a series of oxides presenting a growing acidity: BaO, SrO, CaO, MgO, TiO₂, and SiO₂, and on three MgO surfaces: (100), (110), and (211) on which the atoms have different environments. Special emphasis is borne on the charge transfers, the densities of states and the oxide gap modification upon hydroxylation. We show that these quantities are dependent upon the coverage and that unstable MgO surfaces are more reactive towards water dissociation. Finally, by optimizing the geometry on the three MgO surfaces, we discuss the link between the electronic and structural degrees of freedom on hydroxylated surfaces.     

Adsorption of CO on Ni-promoted TiO2(110)

The valence-band structure and the vibrational modes of CO adsorbed on nickel-promoted TiO₂(110) surfaces as a function of CO exposure have been studied by means of ultraviolet photoelectron spectroscopy (UPS) and high-resolution electron energy-loss spectroscopy (HREELS). It is found that CO exists in molecular form at room temperature on the nickel-promoted TiO₂(110) surfaces and most likely binds to the Ni atoms or nickel-affected sites rather than to the substrate atoms. At saturation coverage, CO molecules adsorb simultaneously on the 2-fold bridge sites and terminal sites on the (111)-oriented Ni islands deposited upon TiO₂(110). The occupation of the edge sites of Ni islands gives rise to an anomalously low frequency of the C---O stretching vibration. This frequency, indicative of a weakened C---O bond, suggests existence of a precursor to the dissociated state.     

Density functional study of initial HfCl4 adsorption and decomposition reactions on silicon surfaces with SiON interfacial layer

The initial adsorption and decomposition of HfCl₄ on silicon surfaces with different types of SiON interfacial layers are investigated using density functional theory. We find that the reactions of HfCl₄ on both the hydroxylated and nitrided silicon surfaces proceed through similar reaction pathways. By comparison of the reaction energies of HfCl₄ with the hydroxyl and amino surface sites, we find that it is both kinetically and thermodynamically favorable for the reactions of HfCl₄ on hydroxyl site of silicon substrates. Comparing with the adjacent bridging oxygen, we also find that the neighboring hydroxyl can facilitate the adsorption of HfCl₄ on the amido surface site. Also, it is more kinetically and thermodynamically favorable for the reaction of HfCl₄ with bridging NH site than that with NH₂ site.     

Evidence for bicarbonate formation on vacuum annealed TiO2(110) resulting from a precursor-mediated interaction between CO2 and H2O

The reaction of CO₂ and H₂O to form bicarbonate (HCO⁻₃) was examined on the nearly perfect and vacuum annealed surfaces of TiO₂(110) with temperature programmed desorption (TPD), static secondary ion mass spectrometry (SSIMS) and high resolution electron energy loss spectrometry (HREELS). The vacuum annealed TiO₂(110) surface possesses oxygen vacancy sites that are manifested in electronic EELS by a loss feature at 0.75 V. These oxygen vacancy sites bind CO₂ only slightly more strongly (TPD peak at 166 K) than do the five-coordinated Ti⁴⁺ sites (TPD peak at 137 K) typical of the nearly perfect TiO₂(110) surface. Vibrational HREELS indicates that CO₂ is linearly bound at the latter sites with a ν_a(OCO) frequency similar to the gas phase value. In contrast, oxygen vacancies dissociate H₂O to bridging OH groups which recombine to liberate H₂O in TPD at 490 K. No evidence for a reaction between CO₂ and H₂O is detected on the nearly perfect surface. In sequentially dosed experiments on the vacuum annealed surface at 110 K, CO₂ adsorption is blocked by the presence of preadsorbed H₂O, adsorbed CO₂ is displaced by postdosed H₂O, and there is little or no evidence for bicarbonate formation in either case. However, when CO₂ and H₂O are simultaneously dosed, a new CO₂ TPD state is observed at 213 K, and the 166 K state associated with CO₂ at the vacancies is absent. SSIMS was used to tentatively assign the 213 K CO₂ TPD state to a bicarbonate species. The 213 K CO₂ TPD state is not formed if the vacancy sites are filled with OH groups prior to simultaneous CO₂+H₂O exposure. Sticking coefficient measurements suggest that CO₂ adsorption at 110 K is precursor-mediated, as is known to be the case for H₂O adsorption on TiO₂(110). A model explaining the circumstances under which the proposed bicarbonate species is formed involves the surface catalyzed conversion of a precursor-bound H₂O–CO₂ van der Waals complex to carbonic acid, which then reacts at unoccupied oxygen vacancies to generate bicarbonate, but falls apart to CO₂ and H₂O in the absence of these sites. This model is consistent with the conditions under which bicarbonate is formed on powdered TiO₂, and is similar to the mechanism by which water catalyzes carbonic acid formation in aqueous solution.     

Zn吸附到含有氧空位(VO)以及羟基(-OH)的锐钛矿相TiO2(101)表面电子结构的第一性原理计算

基于密度泛函理论的第一性原理平面波超软赝势方法, 计算了Zn吸附到TiO₂(101)清洁表面、含有氧空位(V_O)的缺陷表面以及既含有氧空位(V_O)又含有羟基(-OH)表面的能量、Mulliken重叠布居数以及电子结构, 并找到了Zn在每种表面的最稳定结构(分别为模型(c), 模型(aI)以及模型(aII)). 通过对三种表面稳定结构的分析、对比发现: 首先, Zn原子吸附到清洁TiO₂(101)表面上, 主要与表面氧相互作用, 形成Zn–O共价键; 其次, 当Zn原子吸附到缺陷表面时, 吸附能减小到-1.75 eV, 说明Zn更容易吸附到氧空位上(模型(aI)); 最后, 纵观表面模型的能带结构以及态密度图发现, -OH的引入并没有引进新的杂质能级, Zn吸附此表面, 即Zn-TiO₂-V_O-OH, 使得禁带宽度缩短到最小(1.85 eV), 从而有望提高TiO₂的光催化活性. 关键词： 密度泛函理论 氧空位 羟基 Zn原子     

Vibrational EELS studies of CO chemisorption on clean and carbided (111), (100) and (110) nickel surfaces

Room temperature adsorption of CO on bare and carbided (111), (100) and (110) nickel surfaces has been studied by vibrational electron energy loss spectroscopy (EELS) and thermal desorption. On the clean (100) and (110) surfaces two configurations of CO adsorbed species, namely “terminal” and bridge bonded CO, are observed simultaneously. On Ni(111), only two-fold sites are involved. The presence of superficial carbon lowers markedly the bond strength of CO on Ni(111)C and Ni(110)C surfaces, while no adsorption has been detected on the Ni(100)C surface. Moreover, on the carbided Ni(110)C surface, the adsorption mode for adsorbed CO is changed with respect to the clean surface; only “terminal” CO is then observed.