Surface reaction mechanism of atomic layer deposition of HfO2 on Ge(1 0 0)-2 × 1: A density functional theory study

Density functional theory is employed to investigate atomic layer deposition mechanism of HfO₂ on Ge(1 0 0)-2 × 1 surface. Both the HfCl₄ and H₂O half-reactions proceed through an analogous trapping-mediated mechanism. The neighboring hydroxyl in the reaction of HfCl₄ with two Ge-OH* sites has a major effect on the formation of HfCl₄ adsorbed complex. In addition, both the Ge and Si reaction pathways are qualitatively similar, however, adsorption of HfCl₄ is favorable on Ge than on Si surface hydroxyl sites. By comparison of the reactions of H₂O on the different surfaces, the differences in energy are negligible to alter the reaction mechanism.     

Surface reaction mechanism of Y2O3 atomic layer deposition on the hydroxylated Si(1 0 0)-2 × 1: A density functional theory study

The surface reaction mechanism of Y₂O₃ atomic layer deposition (ALD) on the hydroxylated silicon surface is investigated by using density functional theory. The ALD process is designed into two half-reactions, i.e., Cp₃Y (Cp = cyclopentadienyl) and H₂O half-reactions. For the Cp₃Y half-reaction, the chemisorbed complex is formed along with the change of metal-Cp bonding from Y-C(π) to Y-C₁(σ). For the H₂O half-reactions, the chemisorbed energies are increased with the relief of steric congestion around yttrium metal center. In addition, Gibbs free energy calculations show that it is thermodynamically favorable for the Cp₃Y half-reactions. By comparing with the reaction of H₂O with {Si}-(O₂)YCp, it is thermodynamically more favorable and kinetically less favorable for the reactions of H₂O with {Si}-OYCp₂ as well as with {Si}-OYCp(OH).     

Theoretical studies on the adsorption and decomposition of H2O on Pd(1 1 1) surface

To provide information about the chemistry of water on Pd surfaces, we performed density functional slab model studies on water adsorption and decomposition at Pd(1 1 1) surface. We located transition states of a series of elementary steps and calculated activation energies and rate constants with and without quantum tunneling effect included. Water was found to weakly bind to the Pd surface. Co-adsorbed species OH and O that are derivable from H₂O stabilize the adsorbed water molecules via formation of hydrogen bonds. On the clean surface, the favorable sites are top and bridge for H₂O and OH, respectively. Calculated kinetic parameters indicate that dehydrogenation of water is unlikely on the clean regular Pd(1 1 1) surface. The barrier for the hydrogen abstraction of H₂O at the OH covered surface is approximately 0.2-0.3 eV higher than the value at the clean surface. Similar trend is computed for the hydroxyl group dissociation at H₂O or O covered surfaces. In contrast, the O-H bond breaking of water on oxygen covered Pd surfaces, H₂O_ad + O_ad → 2OH_ad, is predicted to be likely with a barrier of ∼0.3 eV. The reverse reaction, 2OH_ad → H₂O_ad + O_ad, is also found to be very feasible with a barrier of ∼0.1 eV. These results show that on oxygen-covered surfaces production of hydroxyl species is highly likely, supporting previous experimental findings.     

Self-limiting growth of ZnO films on (0 0 0 1) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide

Atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N₂O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 °C in a range of DEZn flow rates from 5.7 to 8.7 μmol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 °C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N₂O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N₂O precursors.     

Density functional study of initial HfCl4 adsorption and decomposition reactions on silicon surfaces with SiON interfacial layer

The initial adsorption and decomposition of HfCl₄ on silicon surfaces with different types of SiON interfacial layers are investigated using density functional theory. We find that the reactions of HfCl₄ on both the hydroxylated and nitrided silicon surfaces proceed through similar reaction pathways. By comparison of the reaction energies of HfCl₄ with the hydroxyl and amino surface sites, we find that it is both kinetically and thermodynamically favorable for the reactions of HfCl₄ on hydroxyl site of silicon substrates. Comparing with the adjacent bridging oxygen, we also find that the neighboring hydroxyl can facilitate the adsorption of HfCl₄ on the amido surface site. Also, it is more kinetically and thermodynamically favorable for the reaction of HfCl₄ with bridging NH site than that with NH₂ site.     

Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(1 0 0) surfaces: A comparative study by density functional theory

The surface reactions in atomic layer deposition (ALD) of HfO₂, ZrO₂ and Al₂O₃ on hydroxylated and sulfur-passivated GaAs surfaces are compared by using density functional theory. The HfCl₄ and ZrCl₄ half-reactions show large similarities in energetics and geometrical structure. However, both of them show large discrepancies with the Al(CH₃)₃ (TMA) half-reaction. Calculations find that it is more energetically favorable for the Al₂O₃ deposition than the HfO₂ and ZrO₂ deposition at the initial ALD stage. In addition, calculations find that although the GaAs passivation with sulfur helps to improve the interfacial properties, it is both kinetically and thermodynamically less favorable.     

Adsorption of organic molecules by photochemical reaction on Cl:Si(1 1 1) and H:Si(1 1 1) evaluated by HREELS

The covalent attachment of alkyl groups to silicon surfaces, via carbon-silicon bond formation, has been attempted using gas-surface reactions starting from Cl-terminated Si(1 1 1) or H:Si(1 1 1) under ultraviolet light irradiation. The formation of Cl-terminated Si(1 1 1) and its resulting stability were examined prior to deposition of organic molecules. High-resolution electron energy loss spectroscopy (HREELS) was utilized for detecting surface-bound adsorbates. The detection of photo-deposited organic species on Cl:Si(1 1 1) from gas-phase CH₄ or CH₂CH₂ was not significant. On H:Si(1 1 1), it was evident that after the photoreaction with gas-phase C₂H₅Cl, C₂H₅ groups were chemically bonded to the surface Si atoms through single covalent bonds. The C₂H₅ groups were thermally stable at temperatures below 600 K. Alkyl monolayers prepared on silicon surfaces by dry process will lead to a new prospective technology of nanoscale fabrication and biochemical applications.     

Adsorption of water on TiN (1 0 0), (1 1 0) and (1 1 1) surfaces: A first-principles study

We use first-principles density functional theory-based calculations in the analysis of the interaction of H₂O with (1 0 0), (1 1 0) and (1 1 1) surfaces of TiN, and develop understanding in terms of surface energies, polarity of the surface and chemistry of the cation, through comparison with H₂O adsorption on ZrN. While water molecule physisorbs preferentially at Ti site of (1 0 0) and (1 1 1) surfaces, it adsorbs dissociatively on (1 1 0) surface of TiN with binding stronger than almost 1.32 eV/molecule. Our analysis reveals the following general trends: (a) surfaces with higher energies typically lead to stronger adsorption, (b) dissociative adsorption of H₂O necessarily occurs on a charge neutral high energy surface and (c) lower symmetry of the (1 1 0) plane results in many configurations of comparable stability, as opposed to the higher symmetry (1 0 0) and (1 1 1) surfaces, which also consistently explain the results of H₂O adsorption on MgO available in literature. Finally, weaker adsorption of H₂O on TiN than on ZrN can be rationalized in terms of greater chemical stability of Ti arising from its ability to be in mixed valence.     

Structural properties of oxygen on InN(0 0 0 1) surface

First-principles calculations are performed to study the various structures of oxygen (O) adsorbed on InN(0 0 0 1) surfaces. It is found that the formation energy of O on InN(0 0 0 1) decreases with decreasing oxygen coverage. Of all the adsorbate induced surface structures examined, the structure of InN(0 0 0 1)-(2 × 2) as caused by O adsorption at the H₃ sites with 0.25 monolayers coverage is most energetically favorable. Meanwhile, nitrogen (N) vacancy can form spontaneously. Oxygen atoms may also substitute N atoms, or accumulate at the voids inside InN film or simply stay on the surface during growth. The oxygen impurity then acts as a potential source for the n-type conductivity of InN as well as the large energy band gap measured.     

Ruthenium adsorption and diffusion on the GaN(0 0 0 1) surface

We report first principles calculations to analyze the ruthenium adsorption and diffusion on GaN(0 0 0 1) surface in a 2×2geometry. The calculations were performed using the generalized gradient approximation (GGA) with ultrasoft pseudopotential within the density functional theory (DFT). The surface is modeled using the repeated slabs approach. To study the most favorable ruthenium adsorption model we considered T₁, T₄ and H₃ special sites. We find that the most energetically favorable structure corresponds to the Ru- T₄ model or the ruthenium adatom located at the T₄ site, while the ruthenium adsorption on top of a gallium atom (T₁ position) is totally unfavorable. The ruthenium diffusion on surface shows an energy barrier of 0.612 eV. The resultant reconstruction of the ruthenium adsorption on GaN(0 0 0 1)- 2×2 surface presents a lateral relaxation of some hundredth of Å in the most stable site. The comparison of the density of states and band structure of the GaN(0 0 0 1) surface without ruthenium adatom and with ruthenium adatom is analyzed in detail.     

Formation mechanism of Si(1 0 0) surface morphology in alkaline fluoride solutions

Formation mechanism of Si(1 0 0) surface morphology in alkaline fluoride solutions was investigated both theoretically and experimentally. By analysis of Raman spectra of silicon wafer surfaces and three kinds of etching solutions (NaOH, NaOH/NH₄F, and NaOH/NH₄F/Na₂CO₃) with and without addition of Na₂SiO₃·9H₂O, no Si-F bond is formed, F⁻ and CO₃²⁻ ions accelerate the condensation of Si-OH groups. Based on experimental results, it is proposed that bare silicon and silicon oxide coexist at the wafer surface during etching process and silicon oxide of different structure, size, and site at the surface manufacture different surface morphology in alkaline fluoride solution.     

First-principles calculations of hydrogen molecule adsorption on Ti (0 0 0 1)-(2 × 1) surface

Adsorption of H₂ molecule on the Ti (0 0 0 1)-(2 × 1) surface was studied by density functional theory with generalized gradient approximation (GGA). The parallel and vertical absorption cases were investigated in detail by adsorption energy and electronic structure analysis, we obtained three stable configurations of FCC-FCC (the two H atoms adsorption on the two adjacent fcc sites of Ti (0 0 0 1) surface, respectively), HCP-HCP (the two H atoms adsorption on the two adjacent hcp sites of Ti (0 0 0 1) surface, respectively) and FCC-HCP (the one H atom adsorption on the fcc site and the other adsorption on the near hcp site) based on the six different parallel adsorption sites after the H₂ molecule dissociates. However, all the end configurations of four vertical adsorption sites were unstable, H₂ molecule was very easy to desorb from Ti surface. The H-H bond breaking and Ti-H bond forming result from the H₂ molecule dissociation. H-H bond breaking length ranges from 1.9 Å to 2.3 Å for different adsorption configurations due to the strong Ti-H bond forming. The H₂ dissociative approach and the end stable configurations formation in parallel adsorption processes are attributed to the quantum mechanics steering effects.     

Characterization of diamond (1 0 0) surface with oxygen termination

Ab initio density functional theory (DFT) was employed to study reconstructions of diamond (1 0 0) surfaces in the presence of hydrogen, oxygen and hydroxyl. Clean and (2 × 1):1H surfaces are taken as reference. The properties of oxidization diamond surfaces with several adsorption structures, namely, O-on-top (OT) site, O-bridge (BR) site, hydroxyl (-OH), hydroxyl/hydroxyl, OT/hydroxyl, BR/hydroxyl have been considered. The calculated results indicate that the BR model is much more stable than the OT model, and the most energetically favorable structures of oxygenated surfaces are those with chemisorbed hydroxyl (-OH) group. Furthermore, the stability of the structures is also discussed from the point of HOMO-LUMO gap. Analysis of electronic structures shows that the presence of hydrogen induces surface conductivity whereas oxygen weakens it.     

Methanol decomposition on the β-Ga2O3 (1 0 0) surface: A DFT approach

Density functional theory (DFT) cluster model calculations on methanol reactions on the β-Ga₂O₃ (1 0 0) surface have been realized. β-Ga₂O₃ structure has tetrahedral and octahedral ions and the results of gallia-methanol interaction are different depending on the local surface chemical composition. The surface without oxygen vacancies is very reactive and produces the methanol molecule decomposition. The unsaturated surface oxygen atoms strongly oxidize the methanol molecule. CO₂ and H₂O molecules are produced when methanol reacts with a free oxygen vacancy surface on octahedral gallium sites. On the other hand, H₂CO is found after the reaction of this molecule with a free O vacancy surface on tetrahedral gallium sites. A weak interaction between the remaining CO₂ molecule and the oxide surface was found, being this molecule easy to desorb. Otherwise, H₂CO has a stronger surface bond and it could suffer a later oxidation.     

Site-blocking effects of preadsorbed H on Pt(1 1 1) probed by 1,3-butadiene adsorption and reaction

The influence of hydrogen coadsorption on hydrocarbon chemistry on transition metal surfaces is a key aspect to an improved understanding of catalytic selective hydrogenation. We have investigated the effects of H preadsorption on adsorption and reaction of 1,3-butadiene (H₂CCHCHCH₂, C₄H₆) on Pt(1 1 1) surfaces by using temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). Preadsorbed hydrogen adatoms decrease the amount of 1,3-butadiene chemisorbed on the surface and chemisorption is completely blocked by the hydrogen monolayer (saturation) coverage (θ_H = 0.92 ML). No hydrogenation products of reactions between coadsorbed H adatoms and 1,3-butadiene were observed to desorb in TPD experiments over the range of θ_H investigated (θ_H = 0.6-0.9 ML). This is in strong contrast to the copious evolution of ethane (CH₃CH₃, C₂H₆) from coadsorbed hydrogen and ethylene (CH₂CH₂, C₂H₄) on Pt(1 1 1). Hydrogen adatoms effectively (in a 1:1 stoichiometry) remove sites from interaction with chemisorbed 1,3-butadiene, but do not affect adjacent sites. The adsorption energy of coadsorbed 1,3-butadiene is not affected by the presence of hydrogen on Pt(1 1 1). The chemisorbed 1,3-butadiene on hydrogen preadsorbed Pt(1 1 1) completely dehydrogenates to H₂ and surface carbon upon heating without any molecular desorption detected, which is identical to that observed on clean Pt(1 1 1). In addition to revealing aspects of site blocking that should have broad implications for hydrogen coadsorption with hydrocarbon molecules on transition metal surfaces in general, these results also provide additional basic information on the surface science of selective catalytic hydrogenation of butadiene in butadiene-butene mixtures.     

Comparison of O adsorption on Ni3Al (0 0 1), (0 1 1), and (1 1 1) surfaces through first-principles calculations

First-principles calculations were performed to study the properties of O adsorption on Ni₃Al (0 0 1), (0 1 1), and (1 1 1) surfaces using the Cambridge serial total package (CASTEP) code. Stable adsorption sites are identified. The atomic and electronic structures and adsorption energies are predicted. The adsorption sites for O on the Ni₃Al (0 0 1) surface are at the 2Ni–2Al fourfold hollow site, whereas O prefers to adsorb at the Ni–Al bridge site on (0 1 1) surface and 2Ni–Al threefold hollow site on (1 1 1) surface. It is found that O shows the strongest affinity for Al and the state of O is the most stabilized when O adsorbs on (0 0 1) surface, while the affinity of O for Al on (0 1 1) surface is weaker than (0 0 1) surface, and (1 1 1) surface is the weakest. The stronger O and Al affinity indicates more stable Al₂O₃ when oxidized. The experiment has shown that the oxidation resistance of single crystal superalloy in different orientations improves in the order of (1 1 1), (0 1 1), and (0 0 1) surface, suggesting that the oxidation in different crystallographic orientations may be related to the affinity of O for Al in the surface.     

Reaction of water with Ce-Au(1 1 1) and CeOx/Au(1 1 1) surfaces: Photoemission and STM studies

This article reports photoemission and STM studies for the adsorption and dissociation of water on Ce-Au(1 1 1) alloys and CeO_x/Au(1 1 1) surfaces. In general, the adsorption of water at 300 K on disordered Ce-Au(1 1 1) alloys led to O-H bond breaking and the formation of Ce(OH)_x species. Heating to 500-600 K induced the decomposition or disproportionation of the adsorbed OH groups, with the evolution of H₂ and H₂O into gas phase and the formation of Ce₂O₃ islands on the gold substrate. The intrinsic Ce ↔ H₂O interactions were explored by depositing Ce atoms on water multilayers supported on Au(1 1 1). After adsorbing Ce on ice layers at 100 K, the admetal was oxidized immediately to yield Ce³⁺. Heating to room temperature produced finger-like islands of Ce(OH)_x on the gold substrate. The hydroxyl groups dissociated upon additional heating to 500-600 K, leaving Ce₂O₃ particles over the surface. On these systems, water was not able to fully oxidize Ce into CeO₂ under UHV conditions. A complete Ce₂O₃ → CeO₂ transformation was seen upon reaction with O₂. The particles of CeO₂ dispersed on Au(1 1 1) did not interact with water at 300 K or higher temperatures. In this respect, they exhibited the same reactivity as does a periodic CeO₂(1 1 1) surface. On the other hand, the Ce₂O₃/Au(1 1 1) and CeO_2−x/Au(1 1 1) surfaces readily dissociated H₂O at 300-500 K. These systems showed an interesting reactivity for H₂O decomposition. Water decomposed into OH groups on Ce₂O₃/Au(1 1 1) or CeO_2−x/Au(1 1 1) without completely oxidizing Ce³⁺ into Ce⁴⁺. Annealing over 500 K removed the hydroxyl groups leaving behind CeO_2−x/Au(1 1 1) surfaces. In other words, the activity of CeO_x/Au(1 1 1) for water dissociation can be easily recovered. The behavior of gold-ceria catalysts during the water-gas shift reaction is discussed in light of these results.     

Comparative study of H2 adsorption on W(1 0 0)-c(2 × 2)Cu and W(1 0 0): Surface alloying effects

The interactions of H and H₂ with W(1 0 0)-c(2 × 2)Cu and W(1 0 0) have been investigated through density functional theory (DFT) calculations to elucidate the effect of Cu atoms on the reactivity of the alloy. Cu atoms do not alter the attraction towards top-W sites felt by H₂ molecules approaching the W(1 0 0) surface but make dissociation more difficult due to the rise of late activation barriers. This is mainly due to the strong decrease in the stability of the atomic adsorbed state on bridge sites, the most favourable ones for H adsorption on W(1 0 0). Still, our results show unambiguously that H₂ dissociative adsorption on perfect terraces of the W(1 0 0)-c(2 × 2)Cu surface is a non-activated process which is consistent with the high sticking probability found in molecular beam experiments at low energies.     

A periodic density functional theory study of the dehydrogenation of methanol over CuCl(1 1 1) surface

The decomposition of methanol on clean and oxygen-precovered CuCl(1 1 1) surface have been studied with the method of density functional theory-generalized gradient approximation (DFT-GGA) and the periodic slab models. The effects of different methanol coverages up to one monolayer are investigated. The activation of the O-H bond of methanol to form the methoxide intermediate, the activation of the C-H bond to form the hydroxymethyl intermediate and the activation of the C-O bond to form methyl are examined. These intermediates can subsequently react to form methoxide, hydroxymethyl, methyl, formaldehyde, formyl, and finally CO on the surface. The chemisorption energies of CH₃OH, CH₃O, H₂COH, CH₃, H₂CO, HCO, OH and CO at their most favorable adsorption sites are predicted to be −57.9, −235.3, −172.9, −170.5, −67.8, −192.4, −309.5 and −105.7 kJ/mol, respectively. We also confirm that the O-H bond-breaking paths have lower energy barrier, compared to the C-O and C-H bond-breaking paths. However, these reactions need a lower energy barrier when precovered oxygen atoms participate in these reactions.     

Oxidation mechanism of hydrogen-terminated Ge(1 0 0) surface

Control of the surface chemistry to prepare a robust termination on the Ge surface is crucial for the development of high-end Ge devices. In this study, oxidation of a H-terminated Ge surface was studied in air ambient and H₂O using a multiple internal reflection Fourier transform infrared spectroscopy (MIR FT-IR) technique. Ge surface treated in less diluted HF exhibited a stronger Ge-H peak intensity, and the surface was easily oxidized in the air ambient. Therefore, it is believed that the treatment of the Ge surface in highly diluted HF solution has an advantage in suppressing the oxidation of Ge in the air ambient. For the oxidation of Ge(1 0 0) surface in air ambient, the Ge surface is attacked by oxidizing agents to break Ge-H and Ge-Ge bonds, and the transition GeO_x layer is first formed, followed by a layer-by-layer GeO₂ formation with the increase in exposure time. When the H-terminated Ge surface was treated in H₂O, GeO_x was mainly formed, the thickness of the oxide layer was not changed with an increase in treatment time, and the Ge surface was maintained in a suboxide state, which exhibits a different oxidation mechanism from that in air ambient.