Synthesis of a composite consisting of carbon nanotubes and graphite shell-encapsulated cobalt nanoparticles using plasma-enhanced chemical vapor deposition

We report a simple and effective one-step synthesis route for synthesizing a composite consisted of carbon nanotubes (CNTs) and graphite shell-encapsulated cobalt nanoparticles using plasma-enhanced chemical vapor deposition on Si (1 0 0) substrate covered with catalyst Co particles, discharging a mixture of H₂ and CH₄ gas, and characterize the obtained composite by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscope, and X-ray photoelectron spectroscopy. The results show that CNTs align perpendicularly to the substrate and graphite shell-encapsulated Co nanoparticles clung to the external surfaces of aligned CNTs. The diameter of the graphite shell-encapsulated Co nanoparticles increases with increasing the H₂ content in H₂ and CH₄ carbonaceous gas. A possible growth mechanism of the CNTs and graphite shell-encapsulated cobalt nanoparticles composite has been explored.     

Surface characteristics of Ni catalystic films on growth behavior of multi-walled carbon nanotubes

The effect of the surface characteristics of Ni catalyst films on the growth behavior of multi-walled carbon nanotubes (MWCNTs) were investigated using Ni catalyst films prepared by different physical vapor deposition methods, electron-beam evaporation and sputtering. The growth behavior of MWCNTs was dependent upon the surface roughness of the Ni films. After a pretreatment process with NH₃, the root mean squares of surface roughness of e-beam evaporated and sputtered Ni catalyst films increased to 16.6 and 3.2 nm, respectively. Curled-MWCNTs and carbon-encapsulated Ni nanoparticles were formed on the Ni film deposited by e-beam evaporation while vertically aligned-MWCNTs were grown on the sputter-deposited film. In addition, the surface roughness of the Ni films affected the field emission properties of the MWCNTs. This was considered to originate from the specific growth behavior of the MWCNTs which was primarily caused by the initial surface roughness of the Ni films.     

Synthesis of carbon nanotubes by CVD: Effect of acetylene pressure on nanotubes characteristics

The effect of acetylene partial pressure on the structural and morphological properties of multi-walled carbon nanotubes (MWCNTs) synthesized by CVD on iron nanoparticles dispersed in a SiO₂ matrix as catalyst was investigated. The general growing conditions were: 110 cm³/min flow rate, 690 °C synthesis temperature, 180 Torr over pressure and two gas compositions: 2.5% and 10% C₂H₂/N₂. The catalyst and nanotubes were characterized by HR-TEM, SEM and DRX. TGA and DTA were also carried out to study degradation stages of synthesized CNTs. MWCNTs synthesized with low acetylene concentration are more regular and with a lower amount of amorphous carbon than those synthesized with a high concentration. During the synthesis of CNTs, amorphous carbon nanoparticles nucleate on the external wall of the nanotubes. At high acetylene concentration carbon nanoparticles grow, covering all CNTs’ surface, forming a compact coating. The combination of CNTs with this coating of amorphous carbon nanoparticles lead to a material with high decomposition temperature.     

Short time synthesis of high quality carbon nanotubes with high rates by CVD of methane on continuously emerged iron nanoparticles

We report the variation of yield and quality of carbon nanotubes (CNTs) grown by chemical vapor deposition (CVD) of methane on iron oxide-MgO at 900-1000 °C for 1-60 min. The catalyst was prepared by impregnation of MgO powder with iron nitrate, dried, and calcined at 300 °C. As calcined and unreduced catalyst in quartz reactor was brought to the synthesis temperature in helium flow in a few minutes, and then the flow was switched to methane. The iron oxide was reduced to iron nanoparticles in methane, while the CNTs were growing.TEM micrographs, in accordance with Raman RBM peaks, indicate the formation of mostly single wall carbon nanotubes of about 1.0 nm size. High quality CNTs with I_G/I_D Raman peak ratio of 14.5 are formed in the first minute of CNTs synthesis with the highest rate. Both the rate and quality of CNTs degrades with increasing CNTs synthesis time. Also CNTs quality sharply declines with temperature in the range of 900-1000 °C, while the CNTs yield passes through a maximum at 950 °C. About the same CNTs lengths are formed for the whole range of the synthesis times. A model of continuous emergence of iron nanoparticle seeds for CNTs synthesis may explain the data. The data can also provide information for continuous production of CNTs in a fluidized bed reactor.     

Fabrication and characterization of magnetic Fe3O4-CNT composites

Carbon nanotubes (CNTs) decorated with magnetite nanoparticles on their external surface have been fabricated by in situ solvothermal method, which was conducted in benzene at 500 °C with ferrocene and CNTs as starting reagents. The as-prepared composites were characterized using XRD, FTIR, SEM and TEM. It has been found that the amount of magnetite nanoparticles deposited on the CNTs can be controlled by adjusting the initial mass ratio of ferrocene to CNTs. The Fe₃O₄-CNT composites display good ferromagnetic property at room temperature, with a saturation magnetization value (M_s) of 32.5 emu g⁻¹ and a coercivity (H_c) of 110 Oe.     

金镍复合膜上碳纳米管的定向生长及生长过程中金的作用

以金镍复合膜作催化剂，在96%的高氢气浓度下实现了碳纳米管的定向生长，并对其生长过 程进行了深入探讨.结果表明，高氢气浓度下碳纳米管生长的实现与本实验所选用的催化剂 ——金镍复合膜有密切关系.催化剂中金的参与，促进了碳在催化剂中的扩散，提高了碳在 催化剂中的活度.与催化剂中没有金的情况相比较，金的参与有利于镍吸收气氛中的碳，从 而使镍更容易达到碳饱和，有利于在高的氢气浓度下实现碳纳米管的定向生长. 关键词： 金镍复合膜 高氢气浓度 原子氢 碳活度     

Direct production of carbon nanotubes decorated with Cu2O by thermal chemical vapor deposition on Ni catalyst electroplated on a copper substrate

Carbon nanotubes (CNTs) decorated with Cu₂O particles were grown on a Ni catalyst layer deposited on a Cu substrate by thermal chemical vapor deposition from liquid petroleum gas. Ni catalyst nanoparticles with different sizes were produced in an electroplating system at 45 °C using the corrosive effect of H₂SO₄ which was added to solution. These nanoparticles provide the nucleation sites for CNT growth avoiding the need for a buffer layer. The surface morphology of the Ni catalyst films and CNT growth over this catalyst was studied by scanning electron microscopy (SEM). High temperature surface segregation of the Cu substrate into the Ni catalyst layer and its exposition to O₂ at atmospheric environment, during the CNTs growth, lead to the production of CNTs decorated with about 6 nm Cu₂O nanoparticles. We used SEM to study the surface characteristics of Ni catalyst films and characteristic of grown CNTs. Raman spectroscopy, transmission electron microscopy (TEM), electron diffraction (EDX), X-ray diffraction, and X-ray photoelectron spectroscopy (XPS) revealed the formation of CNTs. The selected area electron diffraction pattern, EDX, and XPS studies show that these CNTs were decorated with Cu₂O nanoparticles. This way of fabrication is the easiest and lowest cost method.     

Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate

Aligned straight silica nanowires (NWs) have been synthesized on Si wafer by thermal evaporation of mixed powders of zinc carbonate hydroxide and graphite at 1100 °C and condensation on Si substrate without using any catalyst. The straight silica NWs have diameters ranging from 50 to 100 nm, and lengths of several micrometers, with cone-shaped tips at their ends. High deposition temperature and relatively high SiO_x vapor concentration near the growth substrate would be beneficial to the formation of the aligned straight silica NWs. Different morphologies of silica nanostructures have also been obtained by varying the deposition temperature and the vapor concentration of the SiO_x molecules. Room temperature photoluminescence measurements on the oriented silica NWs show that two green emission bands at 510 and 560 nm, respectively, revealing that the aligned straight silica NWs might have potential applications in the future optoelectronic devices.     

Large scale intercalated growth of short aligned carbon nanotubes among vermiculite layers in a fluidized bed reactor

Short aligned carbon nanotubes (CNTs) were intercalated grown among vermiculite layers from ethylene using a simple fluidized bed chemical vapor deposition (CVD) process. The length of CNTs ranged from 0.5 to 1.5 μm after a synthesizing duration of 1-5 min at 650 °C. The as-grown CNTs vertically aligned to the vermiculite layers were with the mean outer and inner diameter of 6.7 and 3.7 nm, respectively. A CNT yield of 0.22 g/g_cat was obtained for a 5-min growth. Those indicated that the fluidized bed CVD was an effective way for mass production of short CNTs.     

Observation of Si(1 0 0) surfaces annealed in hydrogen gas ambient by scanning tunneling microscopy

We investigated the cleaning process of Si(1 0 0) surfaces by annealing in H₂ gas ambient following chemical treatments by scanning tunneling microscopy. We observed the monohydride Si structure: Si(1 0 0):2 × 1-H on the surfaces annealed at 1000 °C in 2.5 × 10⁴ Pa H₂ gas ambient without conspicuous contaminants. On the sample annealed for 10 min or longer times, well-defined Si(1 0 0) structures with alternating S_A and S_B steps were observed, whereas the initial roughness still remained on the surfaces annealed for only 5 min.     

Characterization of Cr/6H-SiC(0 0 0 1) nano-contacts by current-sensing AFM

The electrical properties and interface chemistry of Cr/6H-SiC(0 0 0 1) contacts have been studied by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr layers were vapor deposited under ultrahigh vacuum onto both ex situ etched in H₂ and in situ Ar⁺ ion-bombarded samples. The Cr/SiC contacts are electrically non-uniform. Both the measured I-V characteristics and the modeling calculations enabled to estimate changes of the Schottky barrier height caused by Ar⁺ bombardment. Formation of ohmic nano-contacts on Ar⁺-bombarded surfaces was observed.     

Influence of the vacuum level upon the growth of carbon nanotubes on silicon carbide surface

We have investigated the influence of the vacuum level upon the growth of carbon nanotubes (CNTs) on 6H-SiC () surface.CNTs of about 160 nm in length were formed densely and uniformly on the 6H-SiC surface during annealing at 1700 °C in a high vacuum (∼10⁻² Pa). CNTs of about 1 μm in length were formed during annealing at 1700 °C in an ultra-high vacuum (∼10⁻⁷ Pa). However, CNTs were not formed and SiO₂ layers were formed on the SiC surface at 1700 °C in air. It is found that longer CNTs can grow up in an ultra-high vacuum, moreover, a little aligned and low-density graphite layers, or carbon nanofibers can also grow up.     

Growth of multiwalled carbon nanotubes from acetylene over in situ formed Co nanoparticles on MgO support

The performance of Co catalysts supported on MgO at different Co loading (10%-75%) for the formation of carbon nanotubes through acetylene decomposition at 600 ^°C with H₂/C₂H₂ mixture for 1 h is investigated. The yield of MWNTs increases with an increase in Co loading (up to 50%). Starting from 1 g of catalyst precursor, about 8 g of MWNTs was obtained. The XRD patterns of catalyst precursor indicate the presence of cobalt in oxidic phase that eventually transformed into the catalytically active Co nanoparticles (12-18 nm) under the influence of acetylene and was responsible for the growth of coiled-like multi-walled CNTs as revealed by SEM and HRTEM images. It is suggested that bending in coil shaped MWNTs has the potential for functionalization for its biomedical applications.     

Tailoring the exchange bias of Ni/NiO nanogranular samples by the structure control

The exchange bias (EB) effect has been studied in Ni/NiO nanogranular samples obtained by annealing in H₂, at selected temperatures (200≤T_ann≤300 °C), NiO powder previously milled for 5, 10, 20 and 30 h. Both the as-milled NiO powders and the Ni/NiO samples have been analyzed by X-ray diffraction and the exchange bias properties have been investigated in the 5-200 K temperature range. The structure and the composition of the Ni/NiO samples can be satisfactorily controlled during the synthesis procedure by varying both T_ann and the milling time of the precursor NiO powders. In particular, by increasing this last parameter, the mean grain size of the NiO phase reduces down to the final value of 16 nm and the microstrain increases, which is consistent with an enhancement of the structural disorder. The structure of the milled NiO matrix strongly affects the process of nucleation and growth of the Ni nanocrystallites induced by the H₂ treatments, so that, T_ann being equal, the amount and the mean grain size D_Ni of the Ni phase vary substantially in samples having different milling times. Such features of the Ni phase determine the extent of the Ni/NiO interface and consequently the magnitude of the exchange field H_ex: the highest value (∼940 Oe) has been measured at T=5 K in a sample containing ∼7 wt% Ni and with D_Ni=19 nm. However, in Ni/NiO samples with very different structural characteristics and different values of H_ex at T=5 K, the EB effect vanishes at the same temperature (∼200 K) and the same thermal dependence of H_ex is observed. We consider that the evolution of the EB effect with temperature is ultimately determined by the microstructure of the Ni/NiO interface, which cannot be substantially modified by changing the synthesis parameters, milling time and T_ann.     

A novel continuous process for synthesis of carbon nanotubes using iron floating catalyst and MgO particles for CVD of methane in a fluidized bed reactor

A novel continuous process is used for production of carbon nanotubes (CNTs) by catalytic chemical vapor deposition (CVD) of methane on iron floating catalyst in situ deposited on MgO in a fluidized bed reactor. In the hot zone of the reactor, sublimed ferrocene vapors were contacted with MgO powder fluidized by methane feed to produce Fe/MgO catalyst in situ. An annular tube was used to enhance the ferrocene and MgO contacting efficiency. Multi-wall as well as single-wall CNTs was grown on the Fe/MgO catalyst while falling down the reactor. The CNTs were continuously collected at the bottom of the reactor, only when MgO powder was used. The annular tube enhanced the contacting efficiency and improved both the quality and quantity of CNTs.The SEM and TEM micrographs of the products reveal that the CNTs are mostly entangled bundles with diameters of about 10-20 nm. Raman spectra show that the CNTs have low amount of amorphous/defected carbon with I_G/I_D ratios as high as 10.2 for synthesis at 900 °C. The RBM Raman peaks indicate formation of single-walled carbon nanotubes (SWNTs) of 1.0-1.2 nm diameter.     

Synthesis of well-aligned carbon nanotubes by inductively coupled plasma chemical vapor deposition

Uniform and well-aligned carbon nanotubes (CNTs) have been grown using a high density inductively coupled plasma chemical vapor deposition (ICP-CVD) system. A gas mixture of methane-hydrogen was used as the source and Ni as the catalyst for the CNT growth. The effect of process parameters, such as inductive RF power, DC bias voltage and CH₄/H₂ ratio, on the growth characteristics of CNTs was investigated. It was found that both plasma intensity and ion flux to the substrate, as controlled by the inductive RF power and DC bias voltage, respectively, can greatly affect the growth of CNTs. The relative importance of the generation of ions and the subsequent transport of ions to the substrate as serial process steps are considered as the two underlying factors in determining the growth characteristics of CNTs. PACS 81.05.Uw; 81.07.De; 81.15.Gh     

Effects of Ni catalyst–substrate interaction on carbon nanotubes growth by CVD

An investigation of the effects of substrate type and various treatments on carbon nanotubes (CNT) growth, using an evaporated Ni thin film as a catalyst, is presented. Barrier layers of SiO₂, Si₃N₄, and TiN on Si were used as substrates. The catalyst-insulating substrate systems have been processed in several gaseous atmospheres (Ar, NH₃ and H₂) and in the temperature range 700–900 °C, in order to obtain the most appropriate morphology, size and density of catalyst particles as seeds for the subsequent CNT growth. On this kind of substrates, the smallest nanoparticles were obtained on SiO₂ layers, in H₂ or NH₃ atmosphere even at 700 °C. However, the best vertically aligned and well-graphitized CNT resulted from the NH₃ annealing process, followed by the CNT deposition at 900 °C in C₂H₂ and H₂.On TiN conducting substrates, the best vertically aligned CNT were deposited using a shorter annealing step and a deposition process at reduced pressure. The samples were characterized by means of scanning electron microscopy (SEM) and Raman spectroscopy analysis.     

Application of the chemical vapor-etching in polycrystalline silicon solar cells

This paper reports a study of the application of chemical vapor-etching (CVE) for the rear surface and in the emitter of polycrystalline silicon (pc-Si) solar cells. The CVE technique consists of exposing pc-Si wafers to a mixture of HF/HNO₃. This technique is used to groove the rear surface of the pc-Si wafers for acid vapors rich in HNO₃ (HNO₃/HF > 1/4), in order to realize rear-buried metallic contacts (RBMC) and the formation of a porous silicon (PS) layer on the frontal surface of the cell for volume ratio of HNO₃/HF = 1/7. A significant increase of the spectral response in the long wavelength range was observed when a RBMC is formed. This increase was attributed to the reduction of the effective thickness of the base of the cells and grain boundary Al gettering. The achievement of a PS layer on the emitter of the pc-Si cells passivates the surface and reduces the reflectivity. The dark I-V characteristics of pc-Si cells with emitter-based PS show an important reduction of the reverse current together with an improvement of the rectifying behaviour. The I-V characteristic under AM1.5 illumination shows an enhancement of both short circuit current density and fill factor. The internal quantum efficiency is improved, particularly in the short wavelengths region.     

Scanning tunneling microscopy observation of initial growth of Sn and Ge1−xSnx layers on Ge(0 0 1) substrates

We have investigated the initial growth of Sn and Ge_1−xSn_x layers on Ge(0 0 1) surface by using scanning tunneling microscopy. After the growth of a 0.035 ML-thick Sn layer at room temperature, Sn clusters lining vertically to a dimer row was observed. In the case of the 0.035-0.018 ML-thick Sn growth at 250 °C, the characteristic surface reconstruction with the step-edge undulation like a comb was observed. In the growth of a Ge_0.994Sn_0.006 layer at 250 °C, the multilayer polynuclear growth with a lot of two-dimensional small domain was observed. These surface reconstructions should be accounted for by the large compressive stress induced in the surface layer due to the incorporation of Sn atoms.     

Intrinsic coercivities of molecular beam epitaxy grown single-crystal Ni films on Ag buffer layer

Single-crystal Ni films were made by the molecular beam epitaxy (MBE) method on Si(1 0 0) and Si(1 1 0) substrates, respectively, with an 100 Å thick Ag buffer layer. The growth temperature T_S was 270 °C, and the film thickness t was 500 Å. From reflection high-energy electron diffraction (RHEED) patterns, the crystalline symmetries of the two films are clear and as expected. Intrinsic coercivities, H_C(1 0 0) and H_C(1 1 0), are plotted as a function of the angle of rotation ? around the crystal axes [1 0 0] and [1 1 0], respectively. The results show that both H_C(1 0 0) and H_C(1 1 0) exhibit mixed features of the crystalline (K_C) and the induced uniaxial magnetic (K_u) anisotropies. K_u is the magneto-elastic energy, due to lattice mismatch at the Ni/Ag interface. Moreover, the crystalline anisotropy fields, H_K(1 0 0) and H_K(1 1 0), and the induced anisotropy filed, H_u, can be calculated as a function of ?, respectively. Then, each H_C curve is fitted by the equation: H_C = H_o + H_K + H_u, where H_o is the isotropic pinning field. Meanwhile, domain structures were examined by the Bitter method, using Ferrofluid 707. On the Ni(1 0 0) film, we observed the charged cross-tie walls, and on the Ni(1 1 0) film, the un-charged Bloch walls.