Point defects in NiAl near the equiatomic composition

Perturbed γ-γ angular correlation spectroscopy was applied to study the structure and properties of point defects near¹¹¹In probes in quenched and annealed NiAl samples with five compositions in the range c_Ni=48–52%. Quadrupole interaction signals are analysed in terms of near-neighbor Ni-vacancy and nextnear-neighbor Ni antisite atom defects. Large mono- and divacancy concentrations were observed in all samples after quenching. For c_Ni<50%, the vacancy defects could not be annealed out (structural defects). For C_Ni>50%, large quenched-in vacancy concentrations annealed out near 500°C. For c_Ni=50%, most vacancies annealed out near 500°C, but about 35% of the¹¹¹In probes retained a trapped monovacancy. This is attributed to a very low value of the formation enthalpy of a vacancy next to the In probe, estimated to be 0.16(2) eV. A lesser annelaing stage detected at 300°C is tentatively attributed to diffusion of Al-vacancies.     

Fe掺杂对溶胶凝胶法制备的ZnO: Ni薄膜结构及发光特性的影响

采用溶胶凝胶法在玻璃基片上制备了ZnO及Ni, Fe共掺杂的Zn_0.95-xNi_0.05Fe_xO (x=0, 0.005, 0.01, 0.03, 0.05) 薄膜. 通过扫描电镜(SEM) 和X射线衍射(XRD) 研究了薄膜样品的表面形貌和晶体结构. 结果表明所有样品都具有(002) 择优取向, Fe掺杂导致ZnO: Ni薄膜的晶体质量变差, 晶粒尺寸减小, 但适当的Fe掺杂有利于获得致密、 均匀的薄膜. XPS测试结果表明样品中Ni离子的价态为+2价, Fe离子的价态为+2价和+3价.室温光致发光(PL) 测量表明, 所有样品均观察到较强的紫外发光峰, 蓝光双峰和绿光发光峰. ZnO: Ni薄膜的发光强度可以通过Fe掺杂进行有效调节. 进而我们讨论了Ni, Fe共掺杂ZnO样品的发光机理.     

Stability and magnetism of vacancy in NiO: A GGA+U study

Native vacancy defects in typical strongly correlated oxides NiO have been investigated using the GGA+U method. The defect formation energies under different conditions are determined and magnetisms induced by vacancies are studied. Our results indicate that the predominant defect is Ni vacancy under oxygen-rich condition and the most stable ionization state varies with different Fermi level. The Ni vacancy forms shallow acceptor, suggesting the native p-type conductivity originates from the cation vacancy. In addition, after introducing a Ni vacancy, a half-metallic antiferromagnet or half-metallic ferromagnet can form according to different ionization state of cation vacancy.     

Deformation-induced dissolution of the intermetallics Ni3Ti and Ni3Al in austenitic steels at cryogenic temperatures

An anomalous deformation-induced dissolution of the intermetallics Ni₃Al and Ni₃Ti in the matrix of austenitic Fe–Ni–Al(Ti) alloys has been revealed in experiment at cryogenic temperatures (down to 77 K) under rolling and high pressure torsion. The observed phenomenon is explained as the result of migration of deformation-stipulated interstitial atoms from a particle into the matrix in the stress field of moving dislocations. With increasing the temperature of deformation, the dissolution is replaced by the deformation-induced precipitation of the intermetallics, which is accelerated due to a sufficient amount of point defects in the matrix, gained as well in the course of deformation at lower temperatures.     

A first-principles theoretical simulation on the electronic structures and optical absorption properties for O vacancy and Ni impurity in TiO2 photocatalysts

The band structures and optical absorption spectra of O vacancy and Ni ion doped anatase TiO₂ were successfully calculated and simulated by a plane wave pseudopotential method based on density functional theory (DFT). From the calculated results, a phenomenon of “impurity compensation” was found: the lower formation energy for O vacancy than Ni impurity indicated that introducing the intrinsic defect of O vacancy into Ni ion doped TiO₂ sample was very possible; the positive binding energy for the combination of O vacancy and Ni impurity indicated that two defects were apt to bind to each other; While Ni impurity produced the donor levels in the forbidden band of TiO₂, Ni impurity with O vacancy produced the acceptor levels upon which the excitation led to the photogenerated electrons with high energy and transferability. The combination of absorption spectra for O vacancy and Ni impurity with O vacancy models could reproduce the experimental measurement very well.     

Structural and magnetic properties of Ti12M clusters (M=Sc to Zn)

The geometries, electronic, and magnetic properties of the 3d atom doped icosahedron (ICO) Ti₁₂M (M=Sc to Zn), where a dopant atom replaces either the centra l(Ti₁₂M^c) or surface (Ti₁₂M^s) Ti atom in ICO Ti₁₃ cluster, have been systematically investigated by using the density functional theory. The structures of all the optimized Ti₁₂M^c and Ti₁₂M^s clusters are distorted ICO. Sc, Ni, Cu, and Zn atoms prefer to displace surface Ti atom, V, Cr, Mn, and Fe atoms prefer to displace central Ti atom. The position of impurity atom depends on the strength of the interaction between the central atom and the surface atoms. As compared to the pure Ti₁₃ cluster, Ti₁₂M^c and Ti₁₂M^s (M=V, Fe, Co, and Ni) clusters are more stable, Ti₁₂M^c and Ti₁₂M^s (M=Sc, Cr, Mn, Cu, and Zn) are less stable. Both Ti₁₂Ni^s and Ti₁₂Ni^c are magic clusters, which originate from their electronic as well as geometric closed shells. Because the exchange interaction prevails over the crystal field in Ti₁₂M clusters, the valence electrons fill molecular orbitals in terms of Hund’s rule of maximum spin.     

锐钛矿型TiO2(101)面本征点缺陷的理论研究

采用平面波超软赝势方法计算了锐钛矿型TiO₂(101)面存在本征空位和间隙点缺陷的几何结构以及缺陷形成能.首先分析了点缺陷对表面结构的影响,发现不同类型缺陷导致缺陷周围原子有不同的位移趋势：O空位的产生导致空位周围的Ti原子向空位外移动,Ti₁和Ti₂空位的产生均使O₁自发地与周围的O原子团聚,O_i原子易被周围的氧原子吸附而成键,而Ti_i2缺陷几乎 关键词： 第一性原理 2')" href="#">TiO₂ 点缺陷 表面结构     

Point-defect properties of and sputtering events in the {001} surfaces of Ni3Al I. Surface and point-defect properties

Constant-area and fully relaxed molecular dynamics methods are employed to study the properties of the surface and point defects at and near {001} surfaces of bulk and thin-film Ni, Al and Ni₃Al respectively. The surface tension is larger than the surface energy for all {001} surfaces considered in the sequence: Al (1005?mJ?m^?2)<?Ni₃Al (mixed Ni–Al plane outermost, 1725?mJ?m^?2)<?Ni₃Al (all-Ni-atoms plane outermost, 1969?mJ?m^?2)<?Ni (1993?mJ?m^?2). For a surface of bulk Ni₃Al crystal with a Ni–Al mixed plane outermost, Al atoms stand out by 0.0679?Å compared with the surface Ni atoms and, for the all-Ni-atoms surface, Al atoms in the second layer stand out by 0.0205?Å compared with Ni atoms in the same layer. Vacancy formation energies are about half the bulk values in the first layer and reach a maximum in the second layer where the atomic energy is close to the bulk value but the change in embedding energy of neighbouring atoms before and after vacancy formation is greater than that in the bulk. Both the vacancy formation energy and the surface tension suggest that the fourth layer is in a bulk state for all the surfaces. The formation energy of adatoms, antisite defects and point-defect pairs at and near {001} surfaces of Ni₃Al are also given.     

Properties of mono-vacancy in L12-type Ni3Al ordered alloy

The relaxed structures and the formation and migration energies of the mono-vacancy in L1₂-type Ni₃Al ordered alloy have been investigated by combining the modified analytical embedded-atom method (MAEAM) with molecular dynamics (MD) simulation. The movements of the atoms in the vicinity of the mono-vacancy are toward the vacancy, except for the second-nearest-neighbor Al atoms and the fifth-nearest-neighbor Ni atoms around an Al vacancy and the third-nearest-neighbor Al atoms and the fourth-nearest-neighbor Ni atoms around a Ni vacancy that move outward from the vacancy. Furthermore, each of the atoms in the vicinity of either an Al or a Ni vacancy moves approximately along a line connected between the atom and the vacancy. From energy minimization, it is easy for a Ni vacancy to form and to migrate in one nearest-neighbor jump.     

微观相场法模拟Ni75Al5.3V19.7 中L12和D022结构反位缺陷的演化

运用微观相场法研究Ni₇₅Al_5.3V_19.7合金沉淀过程中L1₂结构和D0₂₂结构反位缺陷发现：在沉淀初期,L1₂结构反位缺陷Al_Ni,V_Ni,Ni_Al,D0₂₂结构反位缺陷V_Ni,Al_Ni关键词： 微观相场 反位缺陷 L1₂结构')" href="#">L1₂结构 D0₂₂结构')" href="#">D0₂₂结构     

Energetics of native point defects in cubic silicon carbide

In this work we present a detailed investigation of native point defects energetics in cubic SiC, using state-of-the-art first principles computational method. We find that, the carbon vacancy is the dominant defect in p-type SiC, regardless the growth conditions. Silicon and carbon antisites are the most common defects in n-type material in Si-rich and C-rich conditions respectively. Interstitial defects and silicon vacancy are less favorite from the energetic point of view. The silicon vacancy tends to transform into a carbon vacancy-antisite complex and the carbon interstitial atom prefers to pair to a carbon antisite. The dumbbell structure is the lowest-energy configuration for the isolated carbon interstitial defect, and the tetrahedral interstitial silicon is a stable structure in p-type and intrinsic conditions, while in n-type material the dumbbell configuration is the stable one. Our results suggest that, in samples grown in Si-rich stoichiometric conditions, native defects are a source of n-doping and of compositional unbalance of nominally intrinsic SiC, in accord with experimental evidence.Received: 9 January 2004, Published online: 28 May 2004PACS: 61.72.Ji Point defects (vacancies, interstitials, color centers, etc.) and defect clusters - 68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc. - 74.62.Dh Effects of crystal defects, doping and substitution     

Positron annihilation spectroscopy characterization of effect of intermetallic nanoparticles on accumulation and annealing of vacancy defects in electron-irradiated Fe–Ni–Al alloy

The effect of intermetallic nanoparticles like Ni₃Al and nanoparticles of an Fe-rich bcc phase on the evolution of vacancy defects in an fcc Fe–34.2 wt% Ni–5.4 wt% Al model alloy under electron irradiation at elevated temperatures (423 and 573 K) was investigated using positron annihilation spectroscopy. Nanosized (1–8 nm) particles, which are homogeneously distributed in the alloy matrix, cause a several-fold decrease in the accumulation of vacancies as compared to their accumulation in a quenched alloy. This effect depends on the size and the type of nanoparticles. The effect of the nanoparticles increases when the irradiation temperature increases. The irradiation-induced nucleation and the growth of intermetallic nanoparticles were also observed in an alloy pre-aged at 1023 K under irradiation at 573 K. Thus, a quantum-dot-like positron state within ultrafine intermetallic particles, which we revealed earlier, allows control of the evolution of coherent precipitates like Ni₃Al, along with vacancy defects, during irradiation and subsequent annealing. Possible mechanisms of the absorption of point defects by nanoparticles are discussed.     

Density functional theory study of MgnNi2 (n=1-6) clusters

The geometries of Mg_nNi₂ (n=1-6) clusters are studied by using the hybrid density functional theory (B3LYP) with LANL2DZ basis sets. For the ground-state structures of Mg_nNi₂ clusters, the stabilities and the electronic properties are investigated. The results show that the groundstate structures and symmetries of Mg clusters change greatly due to the Ni atoms. The average binding energies have a growing tendency while the energy gaps have a declining tendency. In addition, the ionization energies exhibit an odd-even oscillation feature. We also conclude that n=3, 5 are the magic numbers of the Mg_nNi₂ clusters. The Mg₃ Ni₂ and Mg₅Ni₂ clusters are more stable than neighbouring clusters, and the Mg₄Ni₂ cluster exhibits a higher chemical activity.     

Formation of carbon-induced dimer vacancy defects on Si(0 0 1)-2 × 1 by thermal decomposition of organic molecules-lack of dependence on the molecules’ structure

Two large and complex adsorbed organic molecules, coronene (C₂₄H₁₂) and C₆₀, have been used to produce Si dimer vacancy defects on Si(0 0 1) by thermal decomposition. Studies by STM show that the aligned structural arrangement of the dimer vacancy defects produced is independent of the chemical structure of the organic molecules. This indicates that the chemistry of the thermally decomposed carbon species produced by decomposition of the organic molecule controls the organization of the Si dimer vacancy defects. It is found that ∼1 C atom is responsible for each dimer vacancy defect for both molecules in accordance with earlier studies of C₂H₂ decomposition on Si(0 0 1).     

Theoretical study on the phase stability,elasticity, hardness and electronic structures of Ni–P compounds

A systematic investigation concerned with phase stability, elastic properties, hardness and relevant electronic structure of Ni–P compounds (Ni₃P, Ni₁₂P₅, Ni₂P, Ni₅P₄, NiP, NiP₂ and NiP₃) was carried out using first principles calculations. The calculated results show that the Ni–P compounds have strong hardness, ranging from 7.80–14.54 GPa. Also, the hardness values gradually increase with the P content. Electronic structure analysis shows that the strong Ni–P and part of P–P hybrid orbitals play important roles in the hardness of these compounds. The calculated elastic constants indicated that the Ni₃P, Ni₁₂P₅ and NiP₂ phases are significantly anisotropic, the NiP and Ni₂P exhibit some anisotropy, while the Ni₅P₄ and NiP₃ show a relatively isotropic character. At last, the properties of these Ni–P compounds including lattice constants, thermodynamic stability, elastic constants C_ij, bulk modulus B, shear modulus G, Young's modulus E and Poisson's ratio ν have been calculated.     

Unstable equilibrium and radiation defects in solids

A new type of point defect in solids genetically related with Frenkel's pairs which appears when there exists the instability zone of pair vacancy (v) - interstitial atom (i). It is shown that, at large instability zones typical of ‘loose’ crystalline structures, equilibrium concentration of unstable pairs i-v may exceed the concentration of usual Frenkel's pairs. In the example of the semiconducting crystals In₂Te₃ and Ga₂Te₃ having loose structure it is experimentally demonstrated that equilibrium point defects cannot be preserved by specimen quenching and that irradiation by large doses of high-energy particles does not result in stable radiation defects formation.     

WnNim(n+m=8)团簇结构与电子性质的理论研究

采用密度泛函理论(DFT)中的B3LYP方法,在Lanl2dz基组水平上对W_nNi_m(n+m=8)团簇的各种可能构型进行了几何参数全优化,得到了它们的基态构型;并对基态构型的平均结合能、Wiberg键级(WBI)、磁学性质、NBO进行了分析,结果表明:团簇随着W原子数的增多,稳定性增强,n≥5时,结构中都含有纯钨团簇的结构基元;W-W键级高于W-Ni键和Ni-Ni键;W₅Ni₃,W₆Ni₂团簇发生了"磁矩猝灭"的现象;在W,Ni原子内部,轨道电荷发生了转移,产生了"轨道杂化"现象,W,Ni原子之间也发生了电荷转移形成了较强的化学键. 关键词： nNi_m(n+m=8)团簇')" href="#">W_nNi_m(n+m=8)团簇 几何结构 电子性质 密度泛函理论     

Magnetic properties of Ni doped gallium nitride with vacancy induced defect

Investigations have been carried out to study the ferromagnetic properties of transition metal (TM) doped wurtzite GaN from first principle calculations using tight binding linear muffin-tin orbital (TBLMTO) method within the density functional theory. The present calculation reveals ferromagnetism in nickel doped GaN with a magnetic moment of 1.13 μ_B for 6.25% of Ni doping and 1.32 μ_B for 12.5% of nickel doping, there is a decrease of magnetic moment when two Ni atoms are bonded via nitrogen atom. The Ga vacancy (V_Ga) induced defect shows ferromagnetic state. Here the magnetic moment arises due to the tetrahedral bonding of three N atoms with the vacancy which is at a distance of 3.689 Å and the other N atom which is at a distance of 3.678 Å .On the other hand the defect induced by N vacancy (V_N) has no effect on magnetic moment and the system shows metallic character. When Ni is introduced into a Ga vacancy (V_Ga) site, charge transfer occur from the Ni ‘d’ like band to acceptor level of V_Ga and formed a strong Ni–N bond. In this Ni–V_Ga complex with an Ni ion and a Ga defect, the magnetic moment due to N atom is 0.299 μ_B .In case of Ni substitution in Ga site with N vacancy, the system is ferromagnetic with a magnetic moment of 1 μ_B.     

Ab initio study of the formation of vacancy and hydrogen-vacancy complexes in palladium and its hydride

We report on the results of ab initio calculations of vacancy and hydrogen-vacancy complexes in palladium and palladium hydride. Comparative analysis of the energies of the formation of defect complexes in palladium and its hydride has revealed that the formation of vacancy clusters is easier in the palladium hydride structure. Investigation of hydrogen-vacancy complexes in bulk crystalline palladium has shown that a hydrogen atom and a vacancy interact to form a stable hydrogen-vacancy (H-Vac) defect complex with a binding energy of E _b = ?0.21 eV. To investigate the initial stage in the formation of hydrogen-vacancy complexes (H _n -Vac _m ), we consider the clusterization of defects into clusters containing H-Vac and H₂-Vac complexes as a structural unit. It is found that hydrogen-vacancy complexes form 2D defect structures in palladium in the (100)-type planes.     

Site preference and thermodynamic properties of R3Ni13-xCoxB2（R=Y,Nd and Sm）

This paper investigates the structural stability of intermetallics R3Ni13-xCoxB2(R=Y,Nd and Sm) with Nd 3 Ni 13 B 2-type structure and the site preferences of the transition element Co by using a series of interatomic pair potentials.The space group remains unchanged upon substitution of Co for Ni in R3Ni13-xCoxB2 and the calculated lattice constants are found to agree with reports in literatures.The calculated cohesive energy curves show that Co atoms substitute for Ni with a strong preference for the 3g sites and the order of site preference is 3g,4h and 6i.Moreover,the total and partial phonon densities of states are first evaluated for the R 3 Ni 13 B 2 compounds with the hexagonal Nd 3 Ni 13 B 2-type structure.