Boron electrical activation in dual B+ + N+ + and B+ + Ar+ ion-implanted silicon

Silicon wafers were implanted with 40 keV B⁺ ions and then with 50 keV N⁺ or 100 keV Ar+ ions to doses from 1.2 x 1014 to 1.2 x 1015 cm^–2. The implanted samples were studied using the Hall effect and standard van der Pauw methods. The dependences of the sheet resistivity and the sheet concentration of charge carriers on the annealing temperature in the range from 700 to 1300 K were obtained. Models describing the influence of additional implantation of nitrogen and argon ions on the process of boron electrical activation during annealing are proposed.     

Electron impact ionization of Zn+ and Ga+

We have investigated the contribution of excitation-autoionization to the electron impact ionization of Zn⁺ and Ga⁺ using the binary encounter approximation. Hartree-Fock velocity distributions for the bound electrons have been used throughout the calculations of direct and indirect ionization cross-sections. The calculated cross-sections are in good agreement with recent experiments. We have also compared our results with other theoretical calculations.     

Observation of Au + Au → Au + Au + ρ 0 and Au + Au → Au* + Au* + ρ 0 with STAR

We report the first observation of the reactions Au + Au → Au + Au + ρ ⁰ and Au + Au → Au* + Au* + ρ ⁰ with the STAR detector. The ρ are produced at small perpendicular momentum, as expected if they couple coherently to both nuclei. We discuss models of vector meson production and the correlation with nuclear breakup, and present a fundamental test of quantum mechanics that is possible with the system.     

锰原子的二步多光子与三步三光子共振电离研究

激光共振电离技术是痕量分析中的重要手段之一。文章以速率方程理论为基础,对锰原子的激光共振电离过程进行了分析,讨论了电离过程中各级激发光功率密度及激光作用时间对电离效率的影响;提出了根据所要求的电离效率和激光作用时间计算所需要的各激发光或电离激光的功率密度的方法;得到了饱和激发或饱和电离的规律及阈值条件。研究发现,在激光作用时间为10 ns时,锰原子饱和电离的激光强度阈值基本都在108 W·cm-2的量级,只有“1+1”双色双共振低三个量级;而“1+1”和“1+1+1”饱和激发的激光强度阈值则在102～103 W·cm-2量级;并且随着激光作用时间的增加,各过程的饱和激发和饱和电离的激光强度阈值将单调减少。     

Elastic π + p and π + π + scattering at LHC

We discuss the possibility of measuring leading neutron production at the LHC. These data could be used to extract from it π ⁺ p and π ⁺ π ⁺ cross sections. In this note we give some estimates for the case of elastic cross sections and discuss related problems and prospects.     

K+-Na+和Ag+-Na+两步离子交换技术制作玻璃基光波导研究

利用K+-Na+和Ag+-Na+两步离子交换得到掩埋型光波导.该方法抑制Ag+-Na+离子交换时产生的Ag+微粒,降低波导损耗,增加波导截面的圆对称性,从而提高光波导器件的性能.用该方法制作了1×8光功分器,其插入损耗平均为10.9 dB.     

主成分回归法同时测定Cu2+、Pb2+、Hg2+和Cd2+

研究了用双硫腙光度法结合多元线性回归技术直接分析水相中有毒重金属离子的方法.结果表明,在β-环糊精和非离子表面活性剂Triton X-100的存在下,金属离子-双硫腙配位体系具有更高的灵敏度和稳定性.使用多元线性回归技术,可以在多种干扰金属离子共存的条件下,不经萃取和化学分离直接分析4种常见的有毒重金属离子.     

Metastable Decomposition of Ar3+ Cluster Ions Into Ar2+ and Ar+

In this note we present the first account of a study of metastable (unimolecular decay) and collision-induced dissociation of Ar₃+ cluster ions using an experimental setup consisting of a molecular beam-electron impact ion source and a double focussing (reversed Nier Johnson geometry) mass spectrometer. The existence of the following metastable decay processes (accessible by our sampling time window) could be demonstrated: Ar₃⁺* → Ar₂+ and Ar₃⁺* → Ar⁺. The processes were studied as a function of electron impact energy. The present results are of importance in order to provide some guidance for the development of appropriate theoretical models for the dissociation of cluster ions.     

H+4, H+5和H+7团簇离子的测量和确认

报告了H+4, H+5, H+7等团簇离子的测量结果. 确认可以由H+3与一个或多个H和H2相互作用形成较大的H+4, H+5, H+7等团簇离子.     

The reaction γ +d → π+ + π− +p + n between 570 and 850 MeV andΔ ++ Δ − production

The reaction γ+d → π⁺+π^? +p + n has been measured in a kinematically complete way at incident photon energies from 570 to 850 MeV in steps of 40 MeV. From detailed comparison of measured data with results of event simulations, it is concluded that three different mechanisms, the quasi-free, double-delta and phase space productions, contribute to the reaction. Each of the cross sections corresponding to these mechanisms is determined separately.     

Localization of carbon atoms and extended defects in silicon implanted separately with C+ and B+ ions and jointly with C+ and B+ ions

The possibility to control the localization of implanted carbon in sites and interstices in silicon immediately during the implantation has been demonstrated. The formation of residual extended defects in silicon implanted separately with C⁺ and B⁺ ions and jointly with C⁺ and B⁺ ions has been shown. It has been found that the formation of residual defects can be suppressed due to annihilation of point defects at C atoms (the Watkins effect). The positive effect is attained if implanted carbon is localized over lattice sites, which is provided by its implantation with the effective current density of the scanning ion beam no lower than 1.0 μA cm^?2.