用动量为70亿电子伏/c和80亿电子伏/c的π~-介子产生Ξ~-超子

本文研究了用动量为68亿电子伏/c和80亿电子伏/c的刀π~-介子产生Ξ~-超子,得到了π~-介子的动量为68和80亿电子伏/c的Ξ~-产生的截面(当68亿电子伏/c时σ=3.6_(-2.1)~( 2.5)μδ/N,当80亿电子伏/c时σ=10.6_(-3.2)~( 4.4)μδ/N),Ξ~-的质量(M_Ξ~-=1317.0±2.2兆电子伏)和Ξ的寿命τ_0=3.5_(-1.2)~( 3.4)×10~(-10)秒。     

Probing the sign-changeable interaction between dark energy and dark matter with current observations

We consider the models of vacuum energy interacting with cold dark matter in this study, in which the coupling can change sigh during the cosmological evolution. We parameterize the running coupling b by the form b(a) = b_0 a + b_e(1-a), where at the earlytime the coupling is given by a constant b_e and today the coupling is described by another constant b_0. We explore six specific models with(i) Q = b(a)H_0ρ_0,(ii) Q = b(a)H_0ρ_(de),(iii) Q = b(a)H_0ρ_c,(iv) Q = b(a)Hρ_0,(v) Q = b(a)Hρ_(de), and(vi) Q = b(a)Hρ_c.The current observational data sets we use to constrain the models include the JLA compilation of type Ia supernova data, the Planck 2015 distance priors data of cosmic microwave background observation, the baryon acoustic oscillations measurements,and the Hubble constant direct measurement. We find that, for all the models, we have b_0 0 and b_e 0 at around the 1σ level,and b_0 and b_e are in extremely strong anti-correlation. Our results show that the coupling changes sign during the evolution at about the 1σ level, i.e., the energy transfer is from dark matter to dark energy when dark matter dominates the universe and the energy transfer is from dark energy to dark matter when dark energy dominates the universe.     

改性的Pb(Mg1/3Nb2/3)O3-PbTiO3-PbZrO3陶瓷及其在超声实时显像线阵的应用

Ph(Mg_(1/3)Nb_(2/3)_(0.380)Ti_(0.360)Zr_(0.260)O_3中的Pb为6％mol的Ba所置换的晶片,比置换量为5％mol的Ba,有更优良的压电性和均匀性,其K_t=0.503,K_p=0.658,N_t=2050KC·mm,tgδ=2.5×10~(-3),ρ=7.8g/cm~3,ε_(33)~T/ε_0=3188,用3％molBa和3％molSr复合置换Pb(Mg_(1/3)Nb_(2/3))_0.380Ti_(0.360)Zr_(0.260)O_3的Pb时仍保持纯Ba置换的良好均匀性和压电性,其K_t=0.504,K_p=0.660,N_t=2060KC·mm,thδ=2.5×10~(-3),ρ=7.8g/cm~3,ε_(33)~T/ε_0=3356.它们良好的压电性和均匀性合乎制作超声实时显像线阵晶片的要求.在线阵晶片中重现这些优良性能的工艺条件是现实的,因而得到实际应用.     

金属间化合物Ce(Ni1-xCux)2Al3的制备和热电特性

我们以Cu替代Ni,制备了金属间化合物Ce(Ni-xCux)2Al3(x=0.0,0.1,0.2,0.3,0.4),利用粉末X射线衍射法(XRD)对样品进行了表征.电阻率ρ(T)和热电势S(T)测量结果表明,由于Cu替代Ni使得单胞体积和3d传导电子数目增加,4f电子与传导电子之间的杂化减弱.近藤温度T-K随着x的增加而降低,体系趋于形成重电子系统.     

La0.5Sm0.2Sr0.3MnO3/x（Sb2O3）体系电输运性质及MR温度稳定性

用固相反应法制备La0.5Sm0.2Sr0.3MnO3/x(Sb2O3)(x=0.00,0.02,0.04,0.05,0.075,0.10,0.15)系列样品,通过X射线衍射(XRD)谱、电阻率-温度(ρ～T)曲线、ρ～T拟合曲线、磁电阻-温度(MR～T)曲线,研究了该体系的电输运性质及MR的温度稳定性.所有样品的电输运性质都表现出绝缘体-金属相变,相变温度很高(312K)且基本保持不变,随Sb2O3复合量增大,电阻率迅速增大,类金属导电可以用ρ=ρ0+AT2公式拟合,表明导电机制是电子-电子相互作用,x=0.075的样品,在200～320K温区磁电阻基本保持不变,MR的温度稳定性是晶界引起的隧穿磁电阻与钙钛矿颗粒体相本征磁电阻竞争的结果.     

La_(0.822)Sr_(0.178)Mn_xO_3薄膜的输运性质

本文报道了用La、Sr、Mn的环烷酸盐溶液 ,采用两次旋转覆盖的溶胶 凝胶方法 ,在LaA lO3( 10 0 )基底上合成了La0 .82 2 Sr0 .178MnxO3薄膜 .Mn含量x在 0 .94 4～ 1.196范围内 ,电阻率随着温度的变化关系 ,是从绝缘体向金属导电行为转变 ;对x =0 .9样品则表现为绝缘体 .对x=0 .94 4样品 ,当T >Tc 时 ,ρ∝exp(E/kT) ,说明载流子的迁移是以热激活方式进行的 ,热激活能为 2 1meV ;当T 相似文献   

离子组态效应对电子传导不透明度的影响

基于相对论Hartree-Fock-Slater 自洽场原子结构模型, 考虑电子-离子间的弹性散射机制, 用分波法和扩展的Ziman 公式对电子传导不透明度作了计算。考虑到等离子体离子环境的影响, 不仅引进了等离子体的结构因子, 而且更细致地考虑了等离子体内离子类型 (组态) 对电子传导     

离子组态效应对电子传导不透明度的影响

 基于相对论Hartree-Fock-Slater 自洽场原子结构模型, 考虑电子-离子间的弹性散射机制, 用分波法和扩展的Ziman 公式对电子传导不透明度作了计算。考虑到等离子体离子环境的影响, 不仅引进了等离子体的结构因子, 而且更细致地考虑了等离子体内离子类型 (组态) 对电子传导     

铍原子里德堡能级的计算(英文)

依据最弱受约束电子势模型理论,计算了铍原子1s~22sns~1S_0(n=3～50)、1s~22snp~1P_1~0(n=3～50)_和1s~22snd~1D_2(n=3～50)里德堡系列能级和量子亏损.计算结果与已有的实验结果符合得很好.     

关于πρ(1200MeV/c~2)共振态和SU_3群的27维表示

不久前,由实验发现,在质量m=1200MeV/c~2附近存在一个π~+ρ~0共振态A,其宽度Γ=350MeV/c~2。后来,更细致的实验指出,存在两个π~+ρ~0共振态,一个是A_1(1080MeV/c~2),另一个是A_2(1320MeV/c~2);二者的宽度分别为Γ_1=80±10MeV/c~2和Γ_2=100±10MeV/c~2。本文只考察A_1的分类问题。 由于A_1的宽度较大,而A_1→πρ的衰变动量不太大,因此,A_1→πρ衰变较大的可能是通过S波、P波或D波。这样,A_1的量子数(同位旋T、自旋J、宇称P和G宇称G)只可能是 当S波衰变时,     

Reflection of slow electrons from the (110) face of a tungsten crystal

Secondary-electron emission from the (110) face of tungsten was studied at low primaryelectron energies (1–30 eV). The electrons reflected from the target surface were distinguished by analyzing the retardation curves of the secondary particles found in retardation in a spherical capacitor. The reflection coefficient R for an electron energy of about 1 eV is 0.08; it increases with increasing energy, reaching a maximum (0.34) at 3.3 eV; then it decreases; passing through a low maximum near 13 eV. Contamination of the target surface shifts the maximum by 0.7 eV and reduces the maximum reflection coefficient to 0.22. The total secondary-emission yield at the clean surface also reaches a maximum at 3.3 eV. Above 13 eV, increases, reaching a value of 0.5 at 30 eV. The value for a contaminated target is lower than that for a clean target. On a clean target the yield corresponding to true secondaries and inelastically reflected electrons remains at 0.1 for primary energies below 5 eV (down to 1 eV), while the value of this yield for a contaminated surface is nearly 0 for a primary energy of 1 eV.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 88–94, November, 1970.The authors thank Prof essor G. N. Shuppe for his interest in this study, A. Kashetov for assistance in the experiments, and master glassblower G. S. Rubets for constructing the apparatus.     

Doubly-differential ionization cross sections of positron impact on argon

We report the first measurement of doubly-differential ionization cross sections for positron impact on argon atoms. Energy- and angle-resolved measurements of ejected electrons in time correlation with the produced and detected ions have been performed. Corresponding measurements with incident electrons were made for comparison. With positrons and electrons as primary particles of 100 eV energy and ejected electrons of 15 eV, our measurements were extended over electron-emission angles from 0 to 90. Lacking theoretical predictions for the doubly-differential ionization of argon, we compare our measured data with the theoretical doubly-differential ionization cross sections, calculated for positron and electron impact on hydrogen by Klar and Berakdar (Freiburg) [1]. The angular dependence of positron and electron cross sections for argon agrees well with the theory for hydrogen. In particular, we found that for small angles of electron ejection the cross section for positron impact ionization exceeds that for electron impact by an order of magnitude in accordance with the predictions of Klar and Berakdar.     

Effects of electron irradiation on the properties of GZO films deposited with RF magnetron sputtering

Transparent conductive GZO films were deposited on polycarbonate substrates by electron beam assisted radio frequency (RF) magnetron sputtering and then the influence of electron irradiation on the structural, optical and electrical properties of GZO films was investigated by using X-ray diffractometry, UV-vis spectrophotometry, four point probes, atomic force microscopy and UV photoelectron spectroscopy. Sputtering power was kept constant at 3 W/cm² during deposition, while electron irradiation energy varied from 450 to 900 eV.Electron irradiated GZO films show larger grain sizes than those of films prepared without electron irradiation, and films irradiated at 900 eV show higher optical transmittance in the visible wavelength region and lower sheet resistance (120 Ω/□) than other films. The work-function is also increased with electron irradiation energy. The highest work-function of 4.4 eV was observed in films that were electron irradiated at 900 eV.     

Electronic quasiparticle structure of ferromagnetic bcc iron

We investigate the influence of electron correlations on the temperature-dependence of the electronic structure of ferromagnetic bcc iron by use of a manybody evaluation of a generalized model of magnetism. The single-particle part of the model-Hamiltonian is taken from an LDA band structure calculation. The manybody interactions are described by only two parameters, an intraband Coulomb interactionU and an interband exchangeJ. WithU=1.8 eV andJ=0.2 eV the self-consistent model solution yields aT=0 moment of about 2.04 µ_B and a Curie-temperature of 1044K. Details of the magnetic behaviour of Fe can be traced back to a striking temperature variation of the quasiparticle density of states. A novel explanation for the experimentally-observed non-collapsing exchange splitting is demonstrated in terms of the temperature-dependent spectral density for wave-vectors near the -point. Typical differences in the magnetic behaviour of Fe and Ni are worked out.     

Laser gain by electron collisional pumping of Ar VII–V XII

Gain coefficients have been calculated for transitions of singlet levels ns–np of orbital n=4 and n=5 in magnesium-like ions with atomic numbers Z=18, 19, 20, 21, 22 and 23. Population inversions for 4p and 5p levels in these ions were also calculated, via electron collisional excitation, for electron temperature range of 93–231 eV and electron density range of 10¹⁶–10¹⁷ cm⁻³. Under these plasma conditions, the maximum gain that occurred for 4s–4p transition was at electron temperature of 231 eV and electron density of 4×10¹⁷ cm⁻³. Scaling of the maximum gain coefficients with atomic number Z and the plasma parameters is also presented.     

Calculation of the Electron Efficiency for a Two-Cavity Gyroklystron Amplifier by Using a Self-Consistent Code

The beam-wave interaction in a Ka-band, two-cavity fundamental gyroklystron amplifier is studied by using a self-consistent nonlinear simulation code. The electron efficiency for this gyroklystron amplifier is calculated, and the effect of various parameters, such as beam voltage, beam current, electron guiding center radius, velocity pitch ratio and drift tube length on the electron efficiency is discussed in detail.     

Assessment of persistent-photoconductivity centers in MBE grown Al x Ga1-x as using capacitance spectroscopy measurements

Deep-level transient spectroscopy and thermally stimulated capacitance measurements were used to investigate the properties of deep traps in Si-dopedn-Al _x Ga_1–xAl layers grown by molecular beam epitaxy. Two electron traps at electron emission activation energies of 0.44 and 0.57 eV have been detected. Both traps were studied in detail and found to be the origin of the persistent-photo-conductivity phenomenon in this material. The nature of both traps is the same as of the DX center in liquid phase epitaxial material reported by Lang et al. The electron capture cross-sections are _n 1 = _n 2=8.3×10^–22cm² atT=205K. Activation energies ofE 1= 0.33eV andE 2=0.37eV at temperatures higher than 125 K were determined by DLTS measurements and by direct measurements of the capture transient. In order to allow for the variation of the free-electron concentration during the capture process, a new method for the evaluation of the electron capture crosssection was developed.     

L to M shell transitions and model comparisons for radiative opacities of sodium fluoride plasma

The radiative opacities of hot dense sodium fluoride (NaF) plasma have been studied in the case of local thermodynamic equilibrium (LTE). The spectrally resolved opacity in the case of and is taken as an example to illustrate the absorption structures of the NaF plasma. The transitions from L to M shells of sodium and fluoride are the main contributions for the plasma absorptions. The isodense opacities of NaF plasma are studied at a density of and temperatures of 20-60 eV. Detailed comparisons among the results of the detailed term accounting (DTA), detailed configuraion accounting (DCA), unresolved transition array (UTA) and average atom (AA) model codes, which have been developed independently in China in the past few years, are performed for both the spectral resolved and mean opacities. Good agreements are found at a temperature of 40 eV and a density of , but discrepancies appear at a temperature of 50 eV and a density of .     

Combined effects of donor and acceptor impurities on the thermoelectric properties of cadmium antimonide

A study was made of the effect of the simultaneous doping with donor (Te) and acceptor (Cu, Ag, Au) elements on the thermoelectric properties of CdSb. Doping with tellurium changes the p-type conductivity of the CdSb crystals to an n-type conductivity with an impurity (Te) activation energy of E_d = (0. 11 ± 0. 01) eV. Doping with an acceptor impurity changes the energy of the donor level, by E_d = 0. 14 eV for doping with silver, by E_d = 0. 10 eV for doping with gold and by E_d = 0. 095 eV for doping with copper. It is shown that the type of conductivity and the thermoelectric properties of CdSb can be adjusted in the desired direction through simultaneous doping with two impurities.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 90–94, June, 1970.     

The Optical Spectra of the Arsenic Triselenide Crystal in the Range from 1 to 10 eV

Full complexes of fundamental optical functions of the As₂Se₃ single crystal in the region from 1 to 10 eV are calculated at 10 K (1–5.5 eV) and 77 K (5.5–10 eV) for three light polarizations (E a, E b, and E c). Their main characteristic features are established. The experimental reflection spectra and the spectra of other optical functions calculated on their basis are compared with the known literature data.