Phase transformation of boron nitride under hypothermal conditions

Phase transformation among different boron nitride (BN) phases in hydrothermal solution was investigated. It was found that hexagonal boron nitride (hBN) firstly formed in the solution at relatively low temperature (i.e., 220 °C). After that, a spot of hBN began to transform into wurtzite boron nitride (wBN) and cubic boron nitride (cBN) at 230 °C. More and more hBN converted into wBN and cBN with the increase in temperature, and this transformation process completed at 300 °C. In this paper, we have explained the mechanism of the above phase transformation by using a reported “puckering mechanism”.     

Studying the growth of cubic boron nitride on amorphous tetrahedral carbon interlayers

The growth of cubic boron nitride (cBN) films on bare silicon and amorphous tetrahedral carbon (ta-C) layers prepared on silicon substrates was studied. The cBN films were prepared by radio frequency magnetron sputter deposition at approximately 870 degrees C. The original ta-C interlayers were graphitized and restructured under high temperature and possibly under ion bombardment during BN deposition. The majority of graphitic basal planes were nearly perpendicular to the surface of silicon substrates. The BN films grown on these restructured carbon layers were deposited with higher content of cubic phase and did not show delamination signs. Turbostratic BN (tBN) basal planes extended carbon basal planes and their edges served as cBN nucleation sites. The cBN films grown on textured ta-C interlayers were insensitive to the ambient environment. The residual sp(3)-bonded carbon phase confined in the interlayers probably acts as a diffusion barrier preventing the oxidation of dangling bonds near BN interface and thus precludes weakening the interface as a result of volume expansion. The carbon interlayers also improve the crystallinity of the oriented tBN because they are continuation of carbon graphitic basal planes so that the volume fraction of nitrogen-void (N-void) defects in the sp(2)-bonded BN intermediate layers is reduced. The strong sp(3)-bonded carbon matrix could thereto withstand large compressive stress and facilitates deposition of thicker cBN films.     

Thermal stability of cubic boron nitride films deposited by chemical vapor deposition

Thermal stability of well-crystallized cubic boron nitride (cBN) films grown by chemical vapor deposition has been investigated by cathodoluminescence (CL), Raman spectroscopy, and scanning electron microscopy (SEM) with the cBN films annealed at various temperatures up to 1,300 degrees C. The crystallinity of the cBN films further improves, as indicated by a reduction of the relevant Raman line width, when the annealing temperature exceeds 1,100 degrees C. Structural damage or amorphization was observed on the grain boundaries of the cBN crystals when annealing temperature reaches 1,300 degrees C. The CL spectra are found to be unchanged up to 1,100 degrees C after annealing at 500 degrees C, showing the stability of the cBN films in electronic properties up to this temperature. New features were observed in the CL spectra when annealing temperature reaches 1,200-1,300 degrees C.     

Interfacial study of cubic boron nitride films deposited on diamond

We have studied the nucleation and growth of cubic boron nitride (cBN) films deposited on silicon and diamond-coated silicon substrates using fluorine-assisted chemical vapor deposition (CVD). These comparative studies substantiate that the incubation amorphous/turbostratic BN layers, essential for the cBN nucleation on silicon, are not vital precursors for cBN nucleation on diamond, and they are inherently eliminated. At vastly reduced critical bias voltage, down to -10 V, cBN growth is still maintained on diamond surfaces, and cBN and underlying diamond crystallites exhibit an epitaxial relationship. However, the epitaxial growth is associated with stress in the cBN-diamond interfacial region. In addition, some twinning of crystallites and small-angle grain boundaries are observed between the cBN and diamond crystallites because of the slight lattice mismatch of 1.36%. The small-angle grain boundaries could be eliminated by imposing a little higher bias voltage during the initial growth stage. The heteroepitaxial growth of cBN films on different substrate materials are discussed in the view of lattice matching, surface-energy compatibility, and stability of the substrate against ion irradiation.     

Low-temperature solid state synthesis and in situ phase transformation to prepare nearly pure cBN

Cubic boron nitride (cBN) is synthesized by a low-temperature solid state synthesis and in situ phase transformation route with NH(4)BF(4), B, NaBH(4) and KBH(4) as the boron sources and NaN(3) as the nitrogen source. Furthermore, two new strategies are developed, i.e., applying pressure on the reactants during the reaction process and introducing the structural induction effect. These results reveal that the relative contents of cBN are greatly increased by applying these new strategies. Finally, almost pure cBN (～90%) crystals are obtained by reacting NH(4)BF(4) and NaN(3) at 250 °C and 450 MPa for 24 h, with NaF as the structural induction material. The heterogeneous nucleation mechanism can commendably illuminate the structure induction effect of NaF with face center cubic structure. In addition, the induction effect results in the cBN nanocrystals presenting obvious oriented growth of {111} planes.     

Multi-step Reaction Route Developed for Improving Crystallinity of Boron Nitride Nanoparticles

A multi-step reaction route was developed to synthesize boron nitride(BN) nanoparticles via the reaction between NaN₃ and BCl₃ in a benzene-thermal solution. By means of this route, the crystallinity of BN nanoparticles was improved via increasing the reaction steps. Meanwhile, a phase transformation from hexagonal BN(hBN) or turbostratic BN(tBN) to cubic BN(cBN) occurred, resulting in the increase of cBN content. Moreover, the content of cBN also slightly increased when the temperature was elevated from 265 ℃ to 280 ℃.     

Chemical Composition and Structure of Thin Films Produced by Chemical Vapor Deposition

This paper reports results from studies of the chemical composition and structure of semiconducting, dielectric, and metallic films produced from molecular precursors by the chemical vapor deposition method. A study was made of films of zinc sulfides, mixed copper, cadmium, and zinc sulfides, boron nitride, carbonitride, silicon carbonitride, and iridium films. It is shown that the use of metal compounds with different ligands (zinc and manganese) enables production of zinc sulfide films in which manganese ions are uniformly incorporated into the zinc sulfide crystal lattice to substitute zinc at the lattice sites. For the films of simple and mixed cadmium, copper, and zinc sulfides, the film structure depends on the type of substrate. The thin layers of mixed cadmium and zinc sulfides are asubstitution solution with a hexagonal structure. The thin layers of boron nitride produced from borazine exhibit a nanocrystalline structure and are a mixture of cubic and hexagonal phases. Composite layers were produced from alkylamine boranes and their mixtures with ammonia. Depending on synthesis conditions, the layers are mixtures of hexagonal boron nitride, carbide, and carbonitride or pure boron nitride. Using silyl derivatives of asymmetric dimethylhydrazine containing Si—N and C—N bonds in the starting molecule, we produced silicon carbonitride films whose crystal habit belongs to a tetragonal structure with lattice parameters a = 9.6 and c = 6.4 . The iridium films obtained by thermal decomposition of iridium trisacetylacetonate(III) on quartz substrates in the presence of hydrogen have a polycrystalline structure with crystallite sizes of 50 to 500 . A method for determining grainsize composition was proposed, and grain shapes for the iridium films were analyzed. The influence of substrate temperature on the internal microstructure and growth of the iridium films is demonstrated. At the iridium–substrate interface, a transition layer forms, whose composition depends on the substrate material and deposition conditions.     

水热法合成立方氮化硼微晶

低温低压条件下, 在水溶液中利用反应耦合效应成功地合成了立方氮化硼微晶. 利用X射线衍射(XRD), 傅里叶红外吸收(FTIR)测试确定了产物的物相组成, 根据透射电镜(TEM)和选区电子衍射(SAED)的测试结果分析产物的形貌和表面特征, 高分辨电镜(HRTEM)和X射线能谱仪(XPS)测试结果证明了立方氮化硼的存在.     

氮化硼薄膜内应力的红外光谱研究

用射频(RF)磁控溅射制备了立方氮化硼(c-BN)薄膜。FTIR光谱和电子衍射实验表明:该薄膜是纯的,其结晶度很高。FTIR光谱研究指出,基板负偏压是c-BN相形成的重要因素,但也由此产生了c-BN薄膜的应力,且负偏压越高,产生的应力越大。比较透射谱和反射谱的结果,c-BN薄膜表面层的应力小于内部的。按照c-BN形成的压力模型,表面应力小到一定程度可能影响c-BN的继续生长。一个特制的分层结构BN薄膜保留了由于应力造成的c-BN的裂纹,这个裂纹分布在一些同心圆上,中心是缺陷或杂质,同心圆之间有明显的分界线,把c-BN表层分割成许多应力区。     

PCVD法制备ZrO~2和YSZ薄膜

以金属β-二酮类有机螯合物Zr(DPM)~4和Y(DPM)~3为挥发性源物质, 采用微波等离子体化学气相淀积法于较低的温度下(420～560℃)成功地在多孔α-Al~2O~3陶瓷,非晶玻璃等衬底上制备出致密的ZrO~2和YSZ薄膜材料.XRD分析结果表明,纯ZrO~2薄膜中除了单斜相外还存在着亚稳态的四方相.当掺入的Y~2O~3 摩尔百分含量大于或等于7%时,ZrO~2完全被稳定成立方相.SEM观察表明, 在等离子体内的不同区域中生成的薄膜形貌有所不同.XPS检测了YSZ薄膜中Zr3d~5~/~2和Zr3d~3~/~2 的电子结合能,发现较ZrO~2的标准值低0.7eV.由TEM观察和由XRD衍射峰半宽度计算, 所制备的ZrO~2和YSZ薄膜中微晶粒径在10nm左右     

高温高压Li3N-hBN体系cBN转变的热力学分析

以经典热力学第二定律ΔG<0为依据,分析了静态高温高压触媒法合成立方氮化硼(cBN)过程中发生的可能反应.考虑温度和压强对反应物相体积的影响,计算了六方氮化硼(Li3N-hBN)体系中hBN+Li3N→Li3BN2,h BN→cBN及Li3BN2→Li3N+cBN反应在高温高压条件下的ΔG.结果证实,Li3BN2由Li3N与hBN在高温高压(T>1300 K,P>3.0 GPa)条件下反应得到,在cBN的合成(T=1600～1800 K,P=4.6～6.0 GPa)条件下,hBN和Li3BN2都有向cBN转化的倾向,但由hBN向cBN直接转变的反应自由能比Li3BN2分解生成cBN的反应自由能更负,反应的可能性更大.探讨了高温高压条件下立方氮化硼的转变机理。     

利用水热合成方法制备正交氮化硼微晶

利用水热方法制备了正交氮化硼微晶, 于400 ℃时制备的氮化硼结晶质量较高, 主要物相为正交氮化硼(oBN). 在反应原料中加入水合肼和氯化铵都有利于样品结晶质量的改善和产率的提高. 在合成氮化硼反应过程中, 适当减慢反应体系的升温速率有利于提高oBN的结晶质量和产率, 但是当升温速率过慢时, oBN的稳定性有所降低, 立方氮化硼(cBN)的稳定性则在一定程度上得到提高. 此外, 反应过程中的原料配比对样品的物相及其结晶质量也有很大影响.     

Preparation and characterization of SiO<Subscript>2</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–Na<Subscript>2</Subscript>O glass coated cBN abrasive particles via sol–gel route

SiO₂–Al₂O₃–Na₂O glass coated cubic boron nitride (cBN) abrasive particles were prepared by sol–gel technique. The results indicated that SiO₂–Al₂O₃–Na₂O glass was excellent material for oxidation protection of cBN abrasive grains because coefficient of thermal expansion of this glass closely matched that of cBN materials. The single particle compressive strength and impact toughness of this glass coated cBN abrasive particles were significantly increased. For the application of glass coated cBN abrasives to vitrified grinding wheels, it was evident that the glass coating provided high bonding strength between cBN abrasive grains and vitrified bond system.     

Preparation of SiBN films deposited by MOCVD

SiBN films were prepared by the MOCVD method using triethylsilane and triethylboron as source materials. The SiBN films were a mixture of boron nitride and silicon nitride determined by IR spectra. The relationship between the ratio of mixture and the preparation condition is clarified. The ratio of silicon nitride to boron nitride in the films was proportional to the ratio of triethylsilane to triethylboron under a large excess of ammonia flow condition. The reaction temperature also influenced the ratio of boron nitride and silicon nitride in the films. The deposition rate of the film increased up to 800°C with a maximum at 1000°C, and decreased up to 1300°C with small value. The crystallinity of SiBN films was very poor because the crystal growth was obstructed.     

Phase and Element Contents of the cBN Based Composites as Estimated by XPS

X-ray photoelectron spectroscopy (XPS) is used to estimate phase and element contents of the composites based on cubic boron nitride. A composite is a mixture of several compounds and the use of traditional X-ray diffraction for phase analysis in many cases can be difficult. By using XPS, we were able to evaluate the atomic concentration of elements and the content of different compounds of each element. SEM and XPS showed that samples are heterogeneous. The TiB₂ phase, expecting from thermodynamic calculations, was formed in both investigated samples of cBN/Ti₃SiC₂/TiC but in different amount. The Ti₃SiC₂ additive was found more chemically active then TiC.     

Formation of niobium nitride by rapid thermal processing

The formation of group V transition metal nitride films by means of rapid thermal processing (RTP) has been investigated. Here we focus on the nitridation of niobium films of 200-500 nm thickness in the temperature range from 500 to 1,100 degrees C under laminar flow of molecular nitrogen or ammonia. The nitride phases formed were characterized by X-ray diffraction (XRD). Secondary neutral mass spectrometry (SNMS) and transmission electron microscopy (TEM) in combination with electron energy loss spectroscopy (EELS) were carried out on samples of selected experiments to provide more detailed information about the initial stages of nitride formation and the microstructure of the films. A classical formation sequence of nitride phases was observed with increasing nitrogen content in the order: alpha-Nb(N) --> beta-Nb2N --> gamma-Nb4N3 --> delta'-NbN --> Nb5N6. Furthermore, oxide enriched regions were discovered inside the metal films. These turned out to be formed mainly in the nitride sequence between the a-alphaNb(N) and beta-Nb2N-phases at the Nb/SiO2 interface due to a reaction of the Nb with the SiO2 layer of the silicon substrates on which the films had been deposited. The SiO2 layer acts as diffusion barrier for nitrogen but also as source for oxygen, according to SNMS and TEM/EELS studies, resulting in the formation of Nb-oxides and/or oxynitrides at the Nb/SiO2 interface.     

Niobium nitride films formed by rapid thermal processing (RTP): a study of depth profiles and interface reactions by complementary analytical techniques

The nitridation of niobium films approximately 250 and 650 nm thick by rapid thermal processing (RTP) at 800 °C in molecular nitrogen or ammonia was investigated. The niobium films were deposited by electron beam evaporation on silicon substrates covered by a 100 or 300 nm thick thermally grown SiO₂ layer. In these investigations the reactivity of ammonia and molecular nitrogen was compared with regard to nitride formation and reaction with the SiO₂ substrate layer. The phases formed were characterized by X-ray diffraction (XRD). Depth profiles of the elements in the films were recorded by use of secondary neutral mass spectrometry (SNMS). Microstructure and spatial distribution of the elements were imaged by transmission electron microscopy (TEM) and energy-filtered TEM (EFTEM). Electron energy loss spectra (EELS) were taken at selected positions to discriminate between different nitride, oxynitride, and oxide phases. The results provide clear evidence of the expected higher reactivity of ammonia in nitride formation and reaction with the SiO₂ substrate layer. Outdiffusion of oxygen into the niobium film and indiffusion of nitrogen from the surface of the film result in the formation of oxynitride in a zone adjacent to the Nb/SiO₂ interface. SNMS profiles of nitrogen reveal a distinct tail which is attributed to enhanced diffusion of nitrogen along grain boundaries.     

Boron nitride synthesized at ambient pressure and room temperature by plasma electrolysis

A mixture of cubic boron nitride (c-BN) and extra-diamond boron nitride (E-BN) has been synthesized at ambient pressure and room temperature by plasma electrolysis. The formation of c-BN was characterized by FTIR and TEM measurements. This method may not only offer a facile technique for c-BN production, but also provide a new research field in c-BN thermodynamics.     

Electronic structure and magnetic properties of hexagonal and cubic forms of aluminum nitride doped with <Emphasis Type="Italic">sp</Emphasis> impurities (B,C, O)

A comparative study of the band structure and magnetic properties of the hexagonal and cubic modifications of aluminum nitride doped with boron, carbon, and oxygen in the nitrogen sublattice has been performed using the ab initio FLAPW-GGA method. Preliminary conclusions on the comparative chemical activity of these phases are drawn from estimates for the energies of substitution of nitrogen atoms by dopants. It has been shown that the doping with boron and nitrogen leads to transition of hexagonal AlN into a magnetic state with high spin polarization of near-Fermi electrons, but for cubic AlN, this effect is absent.     

聚苯乙烯/聚二甲基硅氧烷嵌段共聚物的表面形态研究

采用原子力显微镜(AFM)和透射电镜(TEM)研究了聚苯乙烯/聚二甲基硅氧烷嵌段共聚物(PS-b-PDMS)薄膜的相形态.结果表明,当采用甲苯作为溶剂,旋转涂膜的薄膜样品呈现网络状的形态分布在表面,而样品所对应的透射电镜照片中,PDMS相作为球状分布在PS的连续相中.退火温度对共聚物表面形态有一定的影响,当退火温度高于PDMS的玻璃化温度,表面中PDMS相增多.PS-b-PDMS嵌段共聚物的表面形态随着所用溶剂的变化而有所不同,当采用甲苯作为溶剂时,样品的PS相形成凹坑分布在PDMS的相区之中,而采用环己烷作为溶剂时,PS相作为突起分布在PDMS相区之中.另外,基底对共聚物薄膜表面形态的有较大的影响,当采用硅晶片作为基底时,样品中的PDMS相和PS相呈现近似平行于表面的层状结构.