CsMBi(3)Te(6) and CsM(2)Bi(3)Te(7) (M = Pb, Sn): new thermoelectric compounds with low-dimensional structures

The new materials CsPbBi(3)Te(6) and CsPb(2)Bi(3)Te(7) were discovered through reactions of CsBi(4)Te(6) with PbTe, whereas the isostructural materials CsSnBi(3)Te(6) and CsSn(2)Bi(3)Te(7) were discovered through corresponding reactions with SnTe. The compounds can also be prepared from stoichiometric mixtures of Cs(2)Te, Pb (Sn), Bi, and Te. The crystal structures show a layered architecture of NaCl-type slabs alternating with layers of Cs atoms. This group of compounds offers a new quaternary system, Cs-M-Bi-Te (M = Pb and Sn), available for thermoelectric investigations, including fine-tuning of compositions and doping.     

Impressive structural diversity and polymorphism in the modular compounds ABi3Q5 (A = Rb, Cs; Q = S, Se, Te)

An outstanding example of structural diversity and complexity is found in the compounds with the general formula ABi(3)Q(5) (A = alkali metal; Q = chalcogen). gamma-RbBi(3)S(5) (I), alpha-RbBi(3)Se(5) (II), beta-RbBi(3)Se(5) (III), gamma-RbBi(3)Se(5) (IV), CsBi(3)Se(5) (V), RbBi(3)Se(4)Te (VI), and RbBi(3)Se(3)Te(2) (VII) were synthesized from A(2)Q (A = Rb, Cs; Q = S, Se) and Bi(2)Q(3) (Q = S, Se or Te) at temperatures above 650 degrees C using appropriate reaction protocols. gamma-RbBi(3)S(5) and alpha-RbBi(3)Se(5) have three-dimensional tunnel structures while the rest of the compounds have lamellar structures. gamma-RbBi(3)S(5), gamma-RbBi(3)Se(5), and its isostructural analogues RbBi(3)Se(4)Te and RbBi(3)Se(3)Te(2) crystallize in the orthorhombic space group Pnma with a = 11.744(2) A, b = 4.0519(5) A, c = 21.081(3) A, R1 = 2.9%, wR2 = 6.3% for (I), a = 21.956(7) A, b = 4.136(2) A, c = 12.357(4) A, R1 = 6.2%, wR2 = 13.5% for (IV), and a = 22.018(3) A, b = 4.2217(6) A, c = 12.614(2) A, R1 = 6.2%, wR2 = 10.3% for (VI). gamma-RbBi(3)S(5) has a three-dimensional tunnel structure that differs from the Se analogues. alpha-RbBi(3)Se(5) crystallizes in the monoclinic space group C2/m with a = 36.779(4) A, b = 4.1480(5) A, c = 25.363(3) A, beta = 120.403(2) degrees, R1 = 4.9%, wR2 = 9.9%. beta-RbBi(3)Se(5) and isostructural CsBi(3)Se(5) adopt the space group P2(1)/m with a = 13.537(2) A, b = 4.1431(6) A, c = 21.545(3) A, beta = 91.297(3) degrees, R1 = 4.9%, wR2 = 11.0% for (III) and a = 13.603(3) A, b = 4.1502(8) A, c = 21.639(4) A, beta = 91.435(3) degrees, R1 = 6.1%, wR2 = 13.4% for (V). alpha-RbBi(3)Se(5) is also three-dimensional, whereas beta-RbBi(3)Se(5) and CsBi(3)Se(5) have stepped layers with alkali metal ions found disordered in several trigonal prismatic sites between the layers. In gamma-RbBi(3)Se(5) and RbBi(3)Se(4)Te, the layers consist of Bi(2)Te(3)-type fragments, which are connected in a stepwise manner. In the mixed Se/Te analogue, the Te occupies the chalcogen sites that are on the "surface" of the layers. All compounds are narrow band-gap semiconductors with optical band gaps ranging 0.4-1.0 eV. The thermal stability of all phases was studied, and it was determined that gamma-RbBi(3)Se(5) is more stable than the and alpha- and beta-forms. Electronic band calculations at the density functional theory (DFT) level performed on alpha-, beta-, and gamma-RbBi(3)Se(5) support the presence of indirect band gaps and were used to assess their relative thermodynamic stability.     

Structure and thermoelectric properties of the new quaternary bismuth selenides A(1-x)M(4-x)Bi(11+x)Se21 (A = K and Rb and Cs; M = Sn and Pb)--members of the grand homologous series Km(M6Se8)m(M(5+n)Se(9+n))

Several members of the new family A(1-x)M(4-x)Bi(11+x)Se21 (A = K, Rb, Cs; M = Sn, Pb) were prepared by direct combination of A2Se, Bi2Se3, Sn (or Pb), and Se at 800 degrees C. The single-crystal structures of K(0.54)Sn(3.54)Bi(11.46)Se21, K(1.46)Pb(3.08)Bi(11.46)Se21, Rb(0.69)Pb(3.69)Bi(11.31)Se21, and Cs(0.65)Pb(3.65)Bi(11.35)Se21 were determined. The compounds A(1-x)M(4-x)Bi(11+x) Se21 crystallize in a new structure type with the monoclinic space group C2/m, in which building units of the Bi2Te3 and NaCl structure type join to give rise to a novel kind of three-dimensional anionic framework with alkali-ion-filled tunnels. The building units are assembled from distorted, edge-sharing (Bi,Sn)Se6 octahedra. Bi and Sn/Pb atoms are disordered over the metal sites of the chalcogenide network, while the alkali site is not fully occupied. A grand homologous series Km(M6Se8)m(M(5+n)Se(9+n)) has been identified of which the compounds A(1-x)M(4-x)Bi(11+x)Se21 are members. We discuss here the crystal structure, charge-transport properties, and very low thermal conductivity of A(1-x)M(4-x)Bi(11+x)Se21.     

A new chalcogenide homologous series A2[M(5+n)Se(9+n)] (A = Rb, Cs; M = Bi, Ag, Cd)

The ternary and quaternary selenides, beta-CsBi3Se5, Rb2CdBi6Se11, CsAg(0.5)Bi(3.5)Se6, CsCdBi3Se6, Rb2Ag(1.5)Bi(7.5)Se13, and Cs2Ag(1.5)Bi(7.5)Se13, are all members of the new homologous series A2[M(5+n)Se(9+n)] and crystallize in structures related to each other in a systematic way; these compounds are mid gap semiconductors and are of interest as thermoelectric materials.     

Disproportionation of thermoelectric bismuth telluride nanowires as a result of the annealing process

P-type thermoelectric bismuth telluride nanowires were fabricated by pulsed electrodeposition in anodic aluminium oxide (AAO) membranes. Subsequently, the nanowires were annealed at 423, 523 and 673 K in an inert atmosphere for 4 h. With increasing temperature, it was observed that the Te compound incongruently sublimates due to its high vapor pressure, leading to disproportionation (from Bi(2)Te(3) to Bi(4)Te(3)via Bi(4)Te(5)). The crystalline structure of the nanowires was then investigated using XRD and SAED, with nanowire compositions investigated using an EDX attached to a TEM. The crystallinity of the nanowires was found to be enhanced with increased annealing temperature, and nanowires annealed at 673 K were stably maintained in the Bi(4)Te(3) phase. Additionally, the Seebeck coefficient was determined and the thermopower of nanowires annealed at a temperature of 423 K was shown to be slightly enhanced. Significantly suppressed Seebeck values for annealing temperatures of 523 K and 673 K were also observed.     

Thermoelectric Properties of the CuGaTe_2 Crystal from First-principles Calculations:the Role of Doping and Temperature

The thermoelectric properties of CuGaTe2 crystal are investigated by using the first-principles method and semi-classical Boltzmann theory. We find that the electronic structure of CuGaTe2 is favorable for p-type doping. The transport coefficients can be tuned by doping and changing the work temperature to yield an optimized thermoelectric performance. The optimal doping concentration is 2 × 1020 cm-3, in which the maximum ZT value can reach 1.65 at 900 K. The results suggest CuGaTe2 might find promising applications as good thermoelectric materials, particularly at high temperature.     

CsPb3Bi3Te8 and CsPb4Bi3Te9: low-dimensional compounds and the homologous series CsPbmBi3Te5 + m

Two new thermoelectric materials of quaternary bismuth telluride CsPb3Bi3Te8 and CsPb4Bi3Te9 are reported, which are members of a homologous series featuring anionic slabs [PbmBi3Te5 + m]- (m = 1-4) of monotonically increasing thickness.     

Synthesis and Structure of the Layered Thorium Telluride CsTh(2)Te(6)

The compound CsTh(2)Te(6) has been synthesized at 800 degrees C by the reaction of Th with a Cs(2)Te(3)/Te melt as a reactive flux. The compound crystallizes in the space group -Cmcm of the orthorhombic system with two formula units in a cell of dimensions a = 4.367(2) ?, b = 25.119(10) ?, c = 6.140(3) ?, and V = 673.5(5) ?(3) at T = 113 K. The structure of CsTh(2)Te(6) has been determined from single-crystal X-ray data. The structure comprises infinite, two-dimensional double layers of ThTe(8)-bicapped trigonal prisms. The structural motif of the trigonal prisms resembles that found in UTe(2). Cs(+) cations, disordered equally over two crystallographically equivalent sites, separate the layers and are coordinated by eight Te atoms at the corners of a rectangular parallelepiped. Short Te-Te distances of 3.052(3) and 3.088(3) ? form linear, infinite, one-dimensional chains within the layers. Simple formalisms describe neither the Te-Te bonding in the chain nor the oxidation state of Th. The compound shows weak semiconducting behavior along the Th/Te layers perpendicular to the Te-Te chain.     

Pressure-induced disordered substitution alloy in Sb2Te3

A new type of disordered substitution alloy of Sb and Te at above 15.1 GPa was discovered by performing in situ high-pressure angle-dispersive X-ray diffraction experiments on antimony telluride (Sb(2)Te(3)), a topological insulator and thermoelectric material, at room temperature. In this disordered substitution alloy, Sb(2)Te(3) crystallizes into a monoclinic structure with the space group C2/m, which is different from the corresponding high-pressure phase of the similar isostructural compound Bi(2)Te(3). Above 19.8 GPa, Sb(2)Te(3) adopts a body-centered-cubic structure with the disordered atomic array in the crystal lattice. The in situ high-pressure experiments down to about 13 K show that Sb(2)Te(3) undergoes the same phase-transition sequence with increasing pressure at low temperature, with almost the same phase-transition pressures.     

The First Principles Investigations of the Thermoelectric Properties of GaN with p- and n-Type Doping

We investigate the thermoelectric properties of GaN with p-and n-type doping by the first principles calculation and the semi-classical Boltzmann theory. We find that the power factors (S2σof p-type GaN (-3500 W/mK2) is about twice that of the n-type (-1750 W/mK2), which indicates the thermoelectric properties of p-type GaN would be better. Thermal conductivity of GaN crystal decreases rapidly as the temperature increases, but it is still too large for thermoelectric applications. The figure of merit (ZT) estimated at 1500 K is 0.134 for p-type GaN crystal and 0.062 for the n-type.     

Bismuth telluride (Bi2Te3) nanowires: synthesis by cyclic electrodeposition/stripping, thinning by electrooxidation, and electrical power generation

Nanowires composed of the thermoelectric material Bi2Te3 were synthesized on highly oriented pyrolytic graphite (HOPG) electrodes using the electrochemical step edge decoration (ESED) method. Nanowire synthesis was initiated by applying a voltage pulse of -0.75 V versus SCE for 5 ms to an HOPG electrode in an aqueous solution containing both Bi3+ and TeO22-, thereby producing nuclei at the step edges. Bi2Te3 was electrodeposited onto these nuclei using a cyclic electrodeposition-stripping scheme that involved the electrodeposition of bismuth-rich Bi2Te3 on a negative-going voltammetric scan (to -0.05 V) and the subsequent anodic stripping of excess bismuth from these nanowires during a positive-going scan (to +0.35 V). When this cycle was repeated 10-50 times, Bi2Te3 nanowires in the 100-300-nm-diameter range were obtained. These nanowires were narrowly dispersed in diameter (RSDdia = 10-20%), were more than 100 microm in length, and were organized into parallel arrays containing hundreds of wires. Smaller nanowires, with diameters down to 30 nm, were obtained by electrooxidizing 150-nm-diameter Bi2Te3 nanowires at +0.37 V under conditions of kinetic control. This oxidation process unexpectedly improved the uniformity of Bi2Te3 nanowires, and X-ray photoelectron spectroscopy (XPS) shows that these nanowires retain a Bi2Te3 core but also have a thin surface layer composed of Bi and Te oxides. The ability of Bi2Te3 nanowires to generate electrical power was assessed by transferring ensembles of these nanowires onto cyanoacrylate-coated glass surfaces and evaporating 4-point nickel contacts. A dimensionless figure of merit, ZT, ranging from 0 to 0.85 was measured for fresh samples that were less than 1 day old. XPS reveals that Bi2Te3 nanowires are oxidized within a week to Bi2O3 and TeO2. These oxides may interfere with the application by evaporation of electrical contacts to these nanowires.     

New layered materials: syntheses, structures, and optical properties of K(2)TiCu(2)S(4), Rb(2)TiCu(2)S(4), Rb(2)TiaAg(2)S(4), Cs(2)TiAg(2)sS(4), and Cs(2)TiCu(2)Se(4)

The new compounds K(2)TiCu(2)S(4), Rb(2)TiCu(2)S(4), Rb(2)TiAg(2)S(4), Cs(2)TiAg(2)S(4), and Cs(2)TiCu(2)Se(4) have been synthesized by the reactions of A(2)Q(3) (A = K, Rb, Cs; Q = S, Se) with Ti, M (M = Cu or Ag), and Q at 823 K. The compounds Rb(2)TiCu(2)S(4), Cs(2)TiAg(2)S(4), and Cs(2)TiCu(2)Se(4) are isostructural. They crystallize with two formula units in space group P4(2)/mcm of the tetragonal system in cells of dimensions a = 5.6046(4) A, c = 13.154(1) A for Rb(2)TiCu(2)S(4), a =6.024(1) A, c = 13.566(4) A for Cs(2)TiAg(2)S(4), and a =5.852(2) A, c =14.234(5) A for Cs(2)TiCu(2)Se(4) at 153 K. Their structure is closely related to that of Cs(2)ZrAg(2)Te(4) and comprises [TiM(2)Q(4)(2)(-)] layers, which are separated by alkali metal atoms. The [TiM(2)Q(4)(2)(-)] layer is anti-fluorite-like with both Ti and M atoms tetrahedrally coordinated to Q atoms. Tetrahedral coordination of Ti(4+) is rare in the solid state. On the basis of unit cell and space group determinations, the compounds K(2)TiCu(2)S(4) and Rb(2)TiAg(2)S(4) are isostructural with the above compounds. The band gaps of K(2)TiCu(2)S(4), Rb(2)TiCu(2)S(4), Rb(2)TiAg(2)S(4), and Cs(2)TiAg(2)S(4) are 2.04, 2.19, 2.33, and 2.44 eV, respectively, as derived from optical measurements. From band-structure calculations, the optical absorption for an A(2)TiM(2)Q(4) compound is assigned to a transition from an M d and Q p valence band (HOMO) to a Ti 3d conduction band.     

Synthesis and reactivity of W3Te74+ clusters and chalcogen exchange in the M3Q7 (M = Mo, W; Q = S, Se, Te) cluster family

Heating WTe(2), Te, and Br(2) at 390 degrees C followed by extraction with KCN gives [W(3)Te(7)(CN)(6)](2-). Crystal structures of double salts Cs(3.5)K{[W(3)Te(7)(CN)(6)]Br}Br(1.5).4.5H(2)O (1), Cs(2)K(4){[W(3)Te(7)(CN)(6)](2)Cl}Cl.5H(2)O (2), and (Ph(4)P)(3){[W(3)Te(7)(CN)(6)]Br}.H(2)O (3) reveal short Te(2)...X (X = Cl, Br) contacts. Reaction of polymeric Mo(3)Se(7)Br(4) with KNCSe melt gives [Mo(3)Se(7)(CN)(6)](2-). Reactions of polymeric Mo(3)S(7)Br(4) and Mo(3)Te(7)I(4) with KNCSe melt (200-220 degrees C) all give as final product [Mo(3)Se(7)(CN)(6)](2)(-) via intermediate formation of [Mo(3)S(4)Se(3)(CN)(6)](2-)/[Mo(3)SSe(6)(CN)(6)](2-) and of [Mo(3)Te(4)Se(3)(CN)(6)](2-), respectively, as was shown by ESI-MS. (NH(4))(1.5)K(3){[Mo(3)Se(7)(CN)(6)]I}I(1.5).4.5H(2)O (4) was isolated and structurally characterized. Reactions of W(3)Q(7)Br(4) (Q = S, Se) with KNCSe lead to [W(3)Q(4)(CN)(9)](5-). Heating W(3)Te(7)Br(4) in KCNSe melt gives a complicated mixture of W(3)Q(7) and W(3)Q(4) derivatives, as was shown by ESI-MS, from which E(3)[W(3)(mu(3)-Te)(mu-TeSe)(3)(CN)(6)]Br.6H(2)O (5) and K(5)[W(3)(mu(3)-Te)(mu-Se)(3)(CN)(9)] (6) were isolated. X-ray analysis of 5 reveals the presence of a new TeSe(2-) ligand. The complexes were characterized by IR, Raman, electronic, and (77)Se and (125)Te NMR spectra and by ESI mass spectrometry.     

Synthesis in ionic liquids: [Bi2Te2Br](AlCl4), a direct gap semiconductor with a cationic framework

The Lewis acidic ionic liquid EMIMBr-AlCl(3) (EMIM = 1-ethyl-3-methylimidazolium) allows a novel synthetic route to the semiconducting layered metal chalcogenides halide [Bi(2)Te(2)Br](AlCl(4)) and its Sb analogue. [Bi(2)Te(2)Br](AlCl(4)) is a direct band gap, strongly anisotropic semiconductor and consists of cationic infinite layers of [Bi(2)Te(2)Br](+) and [AlCl(4)](-) anions inserted between the layers.     

Syntheses and characterization of some mixed Te/Se polychalcogenide anions [Te(m)Se(n)]2-

Several mixed Te/Se polychalcogenide anions [Te(m)Se(n)](2-) were synthesized at 293 K by reactions between Te(n)(2-)and Se(n)(2-) anions in N,N-dimethylformamide (DMF) in the presence of different-size ammonium or phosphonium cations, in some cases in the presence of metal species. The structures of these anions were determined by single-crystal X-ray diffraction methods. The crystal structures of [NEt(4)](2)[Te(3)Se(6)] (1) and [NEt(4)](2)[Te(3)Se(7)] (2) consist, respectively, of one-dimensional infinite 1(infinity)[Te(3)Se(6)(2-)] and 1(infinity)[Te(3)Se(7)(2-)] anionic chains separated by NEt(4)(+) cations. In compound 1, each chain comprises Te(3)Se(5) eight-membered rings bridged by Se atoms. The Te(3)Se(5) ring has an "open book" conformation. The NMR spectrum of a DMF solution of [NEt(4)](2)[Te(3)Se(6)] crystals at 223 K shows (77)Se resonances at delta = 290, 349, and 771 ppm and a single (125)Te resonance at delta = 944.7 ppm. In compound 2, each chain comprises Te(3)Se(6) five- and six-membered rings bridged by Se atoms. The Te(3)Se(6) ring can be regarded as an inorganic analogue of bicyclononane. The anion of [PPh(4)](2)[Te(2)Se(2)] (4) contains a Se-Te-Te-Se chain with the terminal Se atoms trans to one another. The new compounds [PPN](2)[TeSe(10)] (3), [NMe(4)](2)[TeSe(3)].DMF (5), and [NEt(4)](2)[TeSe(3)] (6) contain known anions.     

Enhanced high-temperature thermoelectric performance of Yb(14-x)Ca(x)MnSb11

The high temperature p-type thermoelectric material Yb(14)MnSb(11) has been of increasing research interest since its high temperature thermoelectric properties were first measured in 2006. Subsequent substitutions of Zn, Al, and La into the structure have shown that this material can be further optimized by altering the carrier concentration or by reduction of spin-disorder scattering. Here the properties of the Yb(14-x)Ca(x)MnSb(11) solid solution series where isovalent Ca(2+) is substituted for Yb(2+) will be presented. Crystals of the Yb(14-x)Ca(x)MnSb(11) solid solution series were made by Sn-flux (x = 2, 4, 6, 8) with the following ratio of elements: (14-x)Yb: xCa: 6 Mn: 11Sb: 86Sn, and their structures determined by single crystal X-ray diffraction. The density of the material significantly decreases by over 2 g/cm(3) as more Ca is added (from x = 1 to 8), because of the lighter mass of Ca. The resulting lower density is beneficial from a device manufacturing perspective where there is often a trade-off with the specific power per kilogram. The compounds crystallize in the Ca(14)AlSb(11) structure type. The Ca substitution contributes to systematic lengthening the Mn-Sb bond while shortening the Sb-Sb bond in the 3 atom linear unit with increasing amounts of Ca. Temperature dependent thermoelectric properties, Seebeck, electrical resistivity, and thermal conductivity were measured from room temperature to 1273 K. Substitution of Yb with Ca improves the Seebeck coefficient while decreasing the thermal conductivity, along with decreasing the carrier concentration in this p-type material resulting in an enhanced thermoelectric figure of merit, zT, compared to Yb(14)MnSb(11).     

Quaternary tellurides with different valent Ge centers: Cs2Ge3M6Te14 (M = Ga, In)

New quaternary tellurides, Cs(2)Ge(3)M(6)Te(14) (M = Ga, In), were discovered by solid-state reactions. These compounds crystallize in space group P3ml (No. 164), with a = b = 8.2475(2) ?, c = 14.2734(8) ?, and V = 840.82(6) ?(3) (Z = 1) for Cs(2)Ge(3)Ga(6)Te(14) (1) and a = b = 8.5404(2) ?, c = 14.6766(8) ?, and V = 927.07(6) ?(3) (Z = 1) for Cs(2)Ge(3)In(6)Te(14) (2). The remarkable structural feature is the novel three-dimensional [Ge(3)M(6)Te(14)](2-) anionic framework made by condensed In(6)Te(14) (or Ga(6)Te(14)) layers that are connected alternately by dimeric Ge(3+)(2)Te(6) units and Ge(2+)Te(6) octahedra along the c direction. The presence of Ge centers with different oxidation states is also supported by the results of the electron localization function calculation and X-ray photoelectron spectroscopy measurement.     

Synthesis and structure of A4V6[Te2(4+)Te6+]O24 (A = K, Rb)-two new quaternary mixed-valent tellurium oxides

Two new mixed-valent tellurium oxides with vanadium(V), A(4)V(6)[Te(2)(4+)Te(6+)]O(24) (A = K and Rb), have been synthesized by hydrothermal and conventional solid state techniques. Their structures were determined by single-crystal X-ray diffraction analysis. These two iso-structural compounds exhibit layered structural topologies consisting of [V(6)Te(3)O(24)](4-) anionic units. In these anionic structural units, a Te(6+)O(6) octahedron is connected to six VO(4) tetrahedra by corner-sharing to generate a [V(6)TeO(24)] unit, and each of these [V(6)TeO(24)] units are interconnected by sharing two Te(4+)O(3) polyhedra to complete the infinite [V(6)Te(3)O(24)](4-) sheets. Infrared spectroscopy, UV-Visible diffuse reflectance spectroscopy, and thermogravimetric analysis were also performed on these two compounds. Crystal data: K(4)V(6)Te(3)O(24), trigonal, space group R ?3c (No. 167) with a = b = 9.7075(6) ?, c = 42.701(3) ?, V = 3484.9(4) ?(3), and Z = 6; Rb(4)V(6)Te(3)O(24), trigonal, space group R ?3c (No. 167) with a = b = 9.8399(9) ?, c = 43.012(4) ?, V = 3606.6(6) ?(3), and Z = 6.     

High performance thermoelectrics from earth-abundant materials: enhanced figure of merit in PbS by second phase nanostructures

Lead sulfide, a compound consisting of elements with high natural abundance, can be converted into an excellent thermoelectric material. We report extensive doping studies, which show that the power factor maximum for pure n-type PbS can be raised substantially to ~12 μW cm(-1) K(-2) at >723 K using 1.0 mol % PbCl(2) as the electron donor dopant. We also report that the lattice thermal conductivity of PbS can be greatly reduced by adding selected metal sulfide phases. The thermal conductivity at 723 K can be reduced by ~50%, 52%, 30%, and 42% through introduction of up to 5.0 mol % Bi(2)S(3), Sb(2)S(3), SrS, and CaS, respectively. These phases form as nanoscale precipitates in the PbS matrix, as confirmed by transmission electron microscopy (TEM), and the experimental results show that they cause huge phonon scattering. As a consequence of this nanostructuring, ZT values as high as 0.8 and 0.78 at 723 K can be obtained for nominal bulk PbS material. When processed with spark plasma sintering, PbS samples with 1.0 mol % Bi(2)S(3) dispersion phase and doped with 1.0 mol % PbCl(2) show even lower levels of lattice thermal conductivity and further enhanced ZT values of 1.1 at 923 K. The promising thermoelectric properties promote PbS as a robust alternative to PbTe and other thermoelectric materials.     

New compounds from tellurocyanide rhenium cluster anions and 3d-transition metal cations coordinated with ethylenediamine

The compounds [Ni(en)(3)](2)[Re(6)Te(8)(CN)(6)].10H(2)O (1), [Ni(NH(3))(4)(en)](2)[Re(6)Te(8)(CN)(6)].2H(2)O (2), [Ni(NH(3))(2)(en)(2)][(Ni(en)(2))(3)(Re(4)Te(4)(CN)(12))(2)].38H(2)O (3), [Co(NH(3))(2)(en)(2)](2)[(Co(en)(2))Re(6)Te(8)(CN)(6)]Cl(2).H(2)O (4),and [(Zn(H(2)O)(en)(2))(Zn(en)(2))Re(6)Te(8)(CN)(6)].3H(2)O (5) (en = ethylenediamine) have been synthesized and characterized. Compounds 1, 4, and 5 have been synthesized by the diffusion of an aqueous (for 1 and 5) or an ammonia (for 4) solution of Cs(4)[Re(6)Te(8)(CN)(6)].2H(2)O into a glycerol solution of NiCl(2).6H(2)O (for 1), CoCl(2).6H(2)O (for 4), or ZnCl(2) (for 5). Compounds 2 and 3 have been synthesized by the reaction of an aqueous solution of Cs(4)[Re(6)Te(8)(CN)(6)].2H(2)O (for 2) or K(4)[Re(4)Te(4)(CN)(12)].5H(2)O (for 3) with an ammonia solution of Ni(en)(2)Cl(2). Compounds 1 and 2 are ionic whereas compounds 4 and 5 are one-dimensional polymers. Compound 3, a two-dimensional polymer, possesses hexagonal shaped channels of approximate diameter 10-12 A. Because the framework of compound 3 is robust, it is an attractive host for guest molecules of appropriate size and shape. The potential "guest" volume is about 37% of the unit cell volume.