Effect of needle cone angle and air flow rate on electrostatic discharge characteristics of a corona-needle ionizer

In this study, the corona-needle ionizer was designed, constructed, and characterized. Experimental characterizations of the electrostatic discharge in terms of current–voltage relationships of the corona ionizer, including the effects of discharge electrode cone angle and air flow rate were presented. It was found that the charging current and ion concentration in the charging zone increased monotonically with corona voltage. Conversely, discharge currents decreased with increasing angle of the needle cone. The negative corona was found to have higher current than the positive corona. At higher air flow rates, the ion current and concentration were found to be relatively high for the same corona voltage. The effect of air flow rate was more pronounced than the corona voltage. It was also shown that the ion penetration through the ionizer decreased with increasing corona voltage, and increased with increasing air flow rate. The highest ion penetration through the ionizer of the 10° needle cone angle was found to be about 93.7 and 7.7% for positive and negative coronas, respectively. The highest ion penetration for the needle cone angle of 20° was found to be 96.6 and 6.1% for positive and negative coronas, respectively.     

长脉冲强流二极管径向绝缘研究

 介绍了一种应用于长脉冲强流二极管的径向绝缘结构。简介了真空表面闪络机理，径向绝缘结构的设计思路。采用锥形绝缘结构，使用计算机模拟静电场分布优化设计了几何结构参数，在脉宽为200ns的脉冲源上进行了实验研究。二极管最高输出电压为750kV，平均绝缘子表面耐电场强度约50kV/cm，达到了设计要求。     

Quasi-stationary numerical model of the dielectric barrier discharge

The aim of this paper is to present a numerical algorithm for investigating the dynamic characteristics of a simple model of the dielectric barrier discharge in air. The proposed algorithm is based on the finite element method and is capable of determining the distribution of electric field intensity and space charge density in the point-plane geometry, when the plane is covered with a thin dielectric layer and the needle is energized with a sinusoidal voltage. The simulation results show the behavior of corona current and space charge density for a few values of the input voltage and frequency. The aim of this parametric study is to investigate the effect of voltage, and frequency on the time variation of the discharge.     

Analytical model of a corona discharge from a conical electrode under saturation

Exact partial solutions are found for the electric field distribution in the outer region of a stationary unipolar corona discharge from an ideal conical needle in the space-charge-limited current mode with allowance for the electric field dependence of the ion mobility. It is assumed that only the very tip of the cone is responsible for the discharge, i.e., that the ionization zone is a point. The solutions are obtained by joining the spherically symmetric potential distribution in the drift space and the self-similar potential distribution in the space-charge-free region. Such solutions are outside the framework of the conventional Deutsch approximation, according to which the space charge insignificantly influences the shape of equipotential surfaces and electric lines of force. The dependence is derived of the corona discharge saturation current on the apex angle of the conical electrode and applied potential difference. A simple analytical model is suggested that describes drift in the point-plane electrode geometry under saturation as a superposition of two exact solutions for the field potential. In terms of this model, the angular distribution of the current density over the massive plane electrode is derived, which agrees well with Warburg??s empirical law.     

单轴应变SiNMOSFET源漏电流特性模型

本文在建立单轴应变Si NMOSFET迁移率模型和阈值电压模型的基础上, 基于器件不同的工作区域, 从基本的漂移扩散方程出发, 分别建立了单轴应变Si NMOSFET源漏电流模型. 其中将应力的影响显式地体现在迁移率和阈值电压模型中, 使得所建立的模型能直观地反映出源漏电流特性与应力强度的关系. 并且对于亚阈区电流模型, 基于亚阈区反型电荷, 而不是采用常用的有效沟道厚度近似的概念, 从而提高了模型的精度. 同时将所建模型的仿真结果与实验结果进行了比较, 验证了模型的可行性. 该模型已经被嵌入进电路仿真器中, 实现了对单轴应变Si MOSFET 器件和电路的模拟仿真.     

γ射线总剂量辐照对单轴应变Si纳米n型金属氧化物半导体场效应晶体管栅隧穿电流的影响

基于γ射线辐照条件下单轴应变Si纳米n型金属氧化物半导体场效应晶体管(NMOSFET)载流子的微观输运机制,揭示了单轴应变Si纳米NMOSFET器件电学特性随总剂量辐照的变化规律,同时基于量子机制建立了小尺寸单轴应变Si NMOSFET在γ射线辐照条件下的栅隧穿电流模型,应用Matlab对该模型进行了数值模拟仿真,探究了总剂量、器件几何结构参数、材料物理参数等对栅隧穿电流的影响.此外,通过实验进行对比,该模型仿真结果和总剂量辐照实验测试结果基本符合,从而验证了模型的可行性.本文所建模型为研究纳米级单轴应变Si NMOSFET应变集成器件可靠性及电路的应用提供了有价值的理论指导与实践基础.     

Double layer creation in asymmetric discharge

Particle-in-cell Monte Carlo code has been used to simulate the DC discharge in strongly inhomogeneous cylindrical and spherical electric fields. Such a discharge occurs in the gaseous medium between a thin wire and a coaxial cylinder, or between a sharp tip and a sphere at high voltage. The discharge threshold conditions have been specified and corresponding threshold voltage (threshold electric field intensity) has been determined numerically. The threshold voltage varies with the electrode geometry, the polarity of active electrodes, gas composition (H, Ar, N₂) and gas pressure. In case of a positively charged inner electrode, a thin boundary sheet is developed in the vicinity of the electrode, when the quasineutrality of the ionized gas is violated and the electron current is closed via the external RLC circuit. In the opposite case of a negatively charged inner electrode, a double layer is developed inside the ionized gas. Dedicated to Prof. Jan Janča on the occasion of his 60^th birthday. Presented at 23^rd International Conference on Phenomena in Ionized Gases, Toulouse (France), July 17–22, 1997. The work was supported by the Grant Agency of the Czech. Acad. Sci. under Contract No. 202/1022.     

柱面天线射频感性耦合等离子体放电模式特性的实验研究

利用Z-scan、电流、电压探头,通过测量等离子体吸收功率、天线电流、电压、等离子体直流悬浮电位等多种参数,研究了匹配网络、天线耦合强度、导电地面积、气压等多种因素对E,H放电模式特性及模式转化行为的影响.基于Γ型阻抗匹配网络中串联电容对射频电源输出功率的影响,提出了E—H放电模式转化的正负反馈区概念.研究发现：在相同的其他放电条件下,处于正反馈区时等离子体放电易于产生跳变型模式转化,而且模式跳变的临界天线电流、回滞宽度、跳变临界功率、跳变功率差等参数均随阻抗匹配网络参数产生明显变化;在负反馈区内,模式转化过程趋于连续.由于阻抗匹配网络的影响,E—H模式的跳变电流并不是总大于H—E模式的跳变电流.在不同导电地面积、阻抗匹配网络、气压下,模式转化过程中等离子体直流悬浮电位的变化呈现多样性. 关键词： 射频等离子体 感性耦合 容性耦合 模式转化     

Characterization of heat-assisted magnetic probe recording on CoNi/Pt multilayers

A method of heat-assisted magnetic recording (HAMR) potentially suitable for probe-based storage systems is characterized. In this work, field emission current from a scanning tunneling microscope (STM) tip is used as the heating source. Pulse voltages of 2–7 V were applied to a CoNi/Pt multilayered film fabricated on either bare silicon or oxidized silicon substrates. Different types of Ir/Pt and W STM tips were used in the experiment. The results show that thermally recorded magnetic marks are formed with a nearly uniform mark size of 170 nm on the film fabricated on bare silicon substrate when the pulse voltage is above a threshold voltage. The mark size becomes 260 nm when they are written on the identical film fabricated on an oxidized silicon substrate. The threshold voltage depends on the material work function of the tip, with W having a threshold voltage about 1 V lower than Pt. A synthesized model, which contains the calculation of the emission current, the simulation of heat transfer during heating, and the study of magnetic domain formation, was introduced to explain experimental results. The simulation agrees well with the experiments.     

Study on a novel vertical enhancement-mode Ga2O3 MOSFET with FINFET structure

A novel enhanced mode(E-mode)Ga₂O₃ metal-oxide-semiconductor field-effect transistor(MOSFET)with vertical FINFET structure is proposed and the characteristics of that device are numerically investigated.It is found that the concentration of the source region and the width coupled with the height of the channel mainly effect the on-state characteristics.The metal material of the gate,the oxide material,the oxide thickness,and the epitaxial layer concentration strongly affect the threshold voltage and the output currents.Enabling an E-mode MOSFET device requires a large work function gate metal and an oxide with large dielectric constant.When the output current density of the device increases,the source concentration,the thickness of the epitaxial layer,and the total width of the device need to be expanded.The threshold voltage decreases with the increase of the width of the channel area under the same gate voltage.It is indicated that a set of optimal parameters of a practical vertical enhancement-mode Ga₂O₃ MOSFET requires the epitaxial layer concentration,the channel height of the device,the thickness of the source region,and the oxide thickness of the device should be less than 5×10¹⁶ cm^-3,less than 1.5μm,between 0.1μm-0.3μm and less than 0.08μm,respectively.     

发光二极管放电实验现象分析

利用直流电源对发光二极管(LED)的结电容充电,切断直流电源后对LED的电压-时间特性进行测量。当充电电压低于LED复合发光的门槛电压,LED的电压-时间特性与普通二极管的相似。当充电电压高于LED复合发光的门槛电压,首次观察到:开始放电的瞬间会出现一个快速下降过程,快速下降到门槛电压以下;LED上的电压越高,快速下降到的电压越低。对该现象进行分析,得到一些新的结论。当LED的正偏电压高于复合发光的门槛电压后,出现了注入到扩散区的非平衡载流子随正偏电压的提高而减小的现象,即dQ/du<0。     

Measurement of energy spread and angular intensity of a cesium liquid metal ion source

This paper determines the optimum range of total ion current for a cesium liquid metal ion source for use as a focused ion beam (FIB). This range is determined from a figure of merit calculated from measurements of the angular intensity and energy spread of emitted ions. Judging from both the figure of merit and the tail of the energy distribution curves, the total emission current should be set near 1 A for a cesium FIB with a high current density. Assuming that both Cs- and Ga-FIBs have the same diameter, the relative current density of a Cs-FIB is expected to be approximately 80% that of a Ga-FIB.     

大气压氩气射流等离子体的光谱特性研究

等离子体喷枪是一种重要的等离子体源,已成为近几年低温等离子体研究的一个重要课题。本文利用钨针-钨丝网电极制作了直流喷枪装置,在大气压空气中产生了稳定的等离子体羽,并采用发射光谱的方法,对等离子体羽的等离子体参数进行了研究。在钨针电极与钨丝网电极之间放出耀眼的白光,钨丝网电极出口的气流下游有火苗形状的等离子体羽喷出。在电压保持不变的条件下(13.5 kV),等离子体羽长度随气体流量增加而增大;在气体流量保持不变的条件下(10 L·min-1),羽长度随外加电压的增大而增大。在气体流量一定的条件下,放电电压和放电电流呈反比例关系,即电压随着电流的增大而减小,说明放电属于辉光放电。采集了该喷枪在300～800 nm范围内的放电发射光谱,通过玻尔兹曼方法对放电等离子体电子激发温度进行了测量。结果表明,电子的激发温度随外加电压的增大而降低,随着工作气体流量的减小而升高。利用放电的基本理论对上述现象做了解释。这些研究结果对大气压均匀放电等离子体源的研制和工业应用具有重要意义。     

Influence of tetrabutylammonium hexafluorophosphate (TBAPF6) doping level on the performance of organic light emitting diodes based on PVK:PBD blend films

The effect of doping level of tetrabutylammonium hexafluorophosphate (TBAPF₆) on the performance of single-layer organic light emitting diodes (OLEDs) with ITO/PVK:PBD:TBAPF₆/Al structure were investigated where indium tin oxide (ITO) was used as anode, poly(9-vinylcarbazole) (PVK) as hole-transporting polymeric host, 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) as electron-transporting molecule and aluminium (Al) as cathode. It was found that the doped devices underwent a unique transition at the first voltage scan as indicated by drastically increasing of current at certain applied voltage. After the transition, the threshold voltage for current injection as well as the turn-on voltage decreased significantly as compared to the undoped device. The current injection threshold voltage and turn-on voltage decreased with the increase of TBAPF₆ doping level. More importantly, a relatively low current injection threshold voltage of 3 V has been achieved by doping a significant amount of TBAPF₆ (weight ratio greater than five) in the single-layer OLED based on PVK:PBD blend films with high work function Al metal as cathode. The significant improvement was attributed to the reduction of both electron and hole injection energy barriers caused by accumulation of ionic species at the interface.     

介质中双缺陷电荷对碳纳米管场效应晶体管量子输运特性的影响

用非平衡格林函数理论和紧束缚模型近似计算长沟道弹道输运p型碳纳米管场效应管中电流强度.研究当场效应管介质（SiO₂）中存在两个带电缺陷时，载流子散射所引起的电流强度减小和栅极阈值电压偏移量与缺陷位置的关系.介质中两个缺陷所带电荷Q₁=Q₂=+e（-e为电子电荷），都靠近源极或者都靠近漏极，或者一个电荷靠近源极另一个电荷靠近漏极.在工作状态下，所引起的电流强度相对减小比介质中只存在单个正电荷Q=+e且靠近源极（或漏极）时所引起的电流强度相对减小大得多.如果两个正电荷都在沟道中央附近，随着两个电荷的轴向距离减小，栅极阈值电压偏移的绝对值明显增加.栅极阈值电压偏移可达到-0.35 V.     

Energy relaxation of magnetically confined electrons in quantum cascade lasers

By measuring the light emitted from a quantum cascade laser placed in a high magnetic field, we have investigated the energy relaxation of 0D magnetically confined electrons in the active quantum wells of the structure. The experiment consists of injecting electrons by tunnelling into one upper subband level and monitoring a resonant interaction with optical phonons produced by Landau tuning of subband energy levels. For this purpose, the upper level lifetime is probed by measuring the laser intensity as a function of magnetic field, under constant current bias values. Both the laser intensity and the bias voltage oscillate periodically with the reciprocal of the field. In addition, at high magnetic fields, the current threshold goes through deep minima at antiresonance values. The lifetime is then deduced and analyzed using the strong electron–phonon coupling scheme which is typically applied to quantum dots.     

Multiple scattering of light in superdiffusive media

Light transport in superdiffusive media of finite size is studied theoretically. The intensity Green's function for a slab geometry is found by discretizing the fractional diffusion equation and employing the eigenfunction expansion method. Truncated step length distributions and complex boundary conditions are considered. The profile of a coherent backscattering cone is calculated in the superdiffusion approximation.     

Reflectance measurements of aluminium surfaces using integrating spheres

In the investigation of the considerable absorption of visible light in industrially rolled aluminium surfaces, a thorough knowledge of the total reflectance measurement method is required. In this paper a general introduction to the integrating sphere method is given, with emphasis on the current understanding of instrumental artefacts and ways of correcting them. Selected aluminium surfaces were measured employing two spheres; a single-beam instrument equipped with a white-light source and a Si-photoelement detector, and a double-beam sphere, which measures reflectance properties with spectral resolution. It was found necessary to take precautions concerning the orientation of rolled samples relative instrument geometry, to avoid artificial losses from the sphere. The use of a specular reference standard is assumed to minimise the effect of several sphere artefacts, since it produces similar angular distribution of reflected light as the rather glossy aluminium samples. Measurements with spectral resolution show that the total reflectance of aluminium is somewhat red shifted after rolling, a tendency that cannot be revealed in ordinary white-light measurements.     

Astigmatism of the radiation of semiconductor stripe-geometry lasers

The effect of injection current on the intensity and angular distribution of radiation in TE- and TM-polarized modes of diode lasers with a stripe geometry and double GaAs-AlGaAs-based heterostructure is investigated. The analysis of the angular distribution of radiation revealed the nonmonotonic behavior of its astigmatism with increase in the current. The coefficient of astigmatism in the mode of lasing is substantially higher for the TE-mode than for the TM-mode. An increase in radiation astigmatism is accompanied by a decrease in the differential effectiveness and polarization degree. These specific features are explained by the interaction of the defocusing action of distribution of the refractive index n(x) in the plane of the p-n-transition with a minimum under the center of the stripe contract (at x=0) with the focusing action of the gain coefficient distribution. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 4, pp. 461–464, July–August, 2000.     

Computer simulation of liquid metal ion source optics

A numerical calculation of the electric field and current density distribution for a liquid metal ion (LMI) source has been carried out. If a field evaporation mechanism for ion formation is assumed an elongated Taylor cone shape emitter is required to account for the observed total currents. Trajectory calculations including the effect of uniform space charge have been carried out as a function of total current and particle mass. The predicted emission characteristics compare favorably with experimental results for Ga, however the homogeneous space charge model is unable to account for all of the experimentally observed increase in beam divergence with increasing mass and current.