Buffer layer free large area bi-layer graphene on SiC(0 0 0 1)

The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (μ-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 °C. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage.     

Oxidation of graphene on Ru(0 0 0 1) studied by scanning tunneling microscopy

The oxidation of graphene layer on Ru(0 0 0 1) has been investigated by means of scanning tunneling microscopy. Graphene overlayer can be formed by decomposing ethyne on Ru(0 0 0 1) at a temperature of about 1000 K. The lattice mismatch between the graphene overlayer and the substrate causes a moiré pattern with a superstructure in a periodicity of about 30 Å. The oxidation of graphene/Ru(0 0 0 1) was performed by exposure the sample to O₂ gas at 823 K. The results showed that, at the initial stage, the oxygen intercalation between the graphene and the Ru(0 0 0 1) substrate takes place at step edges, and extends on the lower steps. The oxygen intercalation decouples the graphene layer from the Ru(0 0 0 1) substrate. More oxygen intercalation yields wrinkled bumps on the graphene surface. The oxidation of graphene, or the removal of carbon atoms can be attributed to a process of the combination of the carbon atoms with atomic oxygen to form volatile reaction products. Finally, the Ru(0 0 0 1)-(2 × 1)O phase was observed after the graphene layer is fully removed by oxidation.     

Synthesis and characterization of SWNT-heavy alkali metal intercalation compounds,effect of host SWNTs materials

Singlewall carbon nanotubes (SWNTs) produced by electric-arc and laser ablation methods were characterized by X-ray diffraction before and after the reaction with alkali metals (M=K, Rb, and Cs). Reaction with annealed SWNTs gave MC₈ composition at saturation. The alkali metal lattice showed short range order incommensurate with graphene cylinders of SWNTs. X-ray diffractogram simulations have enabled the study of the influence of SWNTs structure on that of intercalation compounds. Chemically-purified bundles, constituted of open SWNTs, can be intercalated inside and between the tubes forming disordered structures. Annealed or pristine bundles were intercalated only between the tubes leading to short or long range ordered structure depending on host crystallinity and alkali metal (K, Rb or Cs). The expansion of the 2D SWNTs lattice after intercalation is comparable to graphite intercalation compounds. Some 2D arrangements of SWNTs and K atoms are proposed and discussed to reproduce XRD results. ¹³C NMR and ESR studies of annealed doped SWNTs emphasize the fact that the intercalation compounds of SWNTs are metallic.     

Intercalation of two-dimensional graphite films on metals by atoms and molecules

An analysis is made of some general laws governing a new physical effect, i.e., the spontaneous penetration of particles (atoms, C₆₀ molecules) adsorbed on a two-dimensional graphite film on a metal (Ir, Re, Pt, Mo,...) to beneath the graphite film (intercalation). It is shown that atoms having low ionization potentials (Cs, K, Na) intercalate a two-dimensional graphite film on iridium at T=300–400K with an efficiency χ≈0.5, accumulating beneath the film to a concentration of up to a monolayer. Atoms having high ionization potentials (Si, Pt, Ni, C, Mo, etc.) intercalate a two-dimensional graphite film on iridium at T≈1000K with an efficiency, χ≈1, forming beneath the film a thick intercalate layer which is strongly bonded chemically to the metal substrate but is probably weakly bonded to the graphite monolayer by van der Waals forces. The presence of a graphite “lid” impeding the escape of atoms from the intercalated state up to record high temperatures T∼2000K leads to superefficient diffusion (with an efficiency close to one) of various atoms (Cs, K) into the bulk of the substrate (Re, Ir). Zh. Tekh. Fiz. 69, 72–75 (September 1999)     

Formation of quasi-free graphene on the Ni(111) surface with intercalated Cu,Ag, and Au layers

This paper reports on a study by angle-resolved photoelectron and low-energy electron energy loss spectroscopy of graphene monolayers, which are produced by propylene cracking on the Ni(111) surface, followed by intercalation of Cu, Ag, and Au atoms between the graphene monolayer and the substrate, for various thicknesses of deposited metal layers and annealing temperatures. It has been shown that the spectra of valence-band π states and of phonon vibrational modes measured after intercalation become similar to those characteristic of single-crystal graphite with weak interlayer coupling. Despite the strong coupling of the graphene monolayer to the substrate becoming suppressed by intercalation of Cu and Ag atoms, the π state branch does not reach at the K point of the Brillouin zone the Fermi level, with the graphene coating itself breaking up partially to form graphene domains. At the same time after intercalation of Au atoms, the electronic band structure approaches the closest to that of isolated graphene, with linear π-state dispersion near the K point of the Brillouin zone, and the point of crossing of the filled, (π), with empty, (π*), states lying in the region of the Fermi level, which makes this system a promising experimental model of the quasi-free graphene monolayer.     

Observation of unfilled electron states in alkali graphite intercalation compounds by secondary electron spectroscopy

The energy position of distinct σ-electron energy bands above the Fermi level has been measured in pure graphite, in a variety of stage 1 alkali intercalation compounds and in several stages of C_xK. Changes of the σ-band gap between occupied and unoccupied states near the Λ-point by a nonuniform shift of the valence- and conduction-bands are small for the heavy alkali graphite intercalation compounds, whereas a change of 1 eV is observed for C₆Li.     

Sodium Intercalation of Graphene Films on Re( $$10\bar 10$$ 10 1 ¯ 0 )

It is shown that during low-temperature (300–500 K) intercalation of sodium atoms into thin multilayer graphene and graphite films on rhenium the first graphene layer plays the role of a trap to which atoms coming on the surface diffuse through a graphite film. The intercalation phase of the interlayer space in the graphite bulk is actively filled at a sodium atoms concentration under the first graphene layer close to the maximum possible (2 ± 0.5) × 10¹⁴ cm^–2. This phase capacity is proportional to the graphite film thickness that can be varied in this work from one graphene layer to ~50 atomic layers. The diffusion energy E _d of Na atoms through the graphite film was estimated to be E _d ≈ 1.4 eV.

     

三层石墨烯及其n型和p型插层化合物的制备和拉曼光谱表征

我们利用微机械剥离方法制备了三层石墨烯.在此基础上,利用两室气体传输法,以三氯化铁和钾为化学掺杂剂,成功合成了三层石墨烯的一阶p型和n型插层化合物.三层石墨烯的高分辨率拉曼光谱具有独特的2D谱峰线形,该线形可以用作指纹来鉴别三层石墨烯.三层石墨烯一阶插层化合物的拉曼光谱表明,三氯化铁和钾的插层掺杂使得三层石墨烯的层间耦...     

Low energy photoelectron spectroscopy on alkali graphite intercalation compounds

The conduction band of various stages of alkali graphite intercalation compounds has been studied by low energy photoelectron spectroscopy (hv ? 6.55 eV). The dissimilar behaviour of the width β of the conduction band peak as a function of photon energy for C₆Li and C₈M (M = K, Rb, and Cs) is discussed in terms of different band types in the vicinity of the Fermi level. The stage dependence of β is measured and interpreted for the system C_xK (for stages 1, 2, 4, and 5).     

Properties of the defect mode in one-dimensional ferroelectric Si/C60 photonic crystals

In the present paper, a novel photonic crystal (PC) defect mode is designed by inserting a ferroelectric material layer (LiNbO₃) into Si/C₆₀ one-dimensional PCs. The band structure of the ferroelectric PCs is numerically analyzed by the transfer matrix method (TMM). The width of the photonic band gap increases by 80 nm and a defect mode appears at a central wavelength of 680 nm when a 150 nm LiNbO₃ layer is inserted into the Si/C₆₀ PC structure. The defect mode in the band gap shifts linearly with the change in electric field. The defect mode shifts by 11.2 nm toward shorter wavelengths when the thin film is subjected to a DC voltage of 1 KV.     

Preparation of graphene encapsulated copper nanoparticles from CuCl2-GIC

Graphene encapsulated metallic copper nanoparticle composite was prepared by reduction of stage-2 CuCl₂-graphite intercalation compounds, using both metallic potassium and potassium borohydride/ethylenediamine matrix as reducing reagents. X-ray diffraction, high-resolution transmission electron microscopy and Raman spectroscopy were employed to characterize the reduction products. The results show that the copper nanoparticles in the graphite matrix are 30 to 70 nm in size. The copper concentration in the reduction product is experimental-condition dependant. A severe structure disorder of graphitic carbon occurs during the reduction procedure. The formation procedure of copper particles in the graphene sheets is discussed briefly.     

RHEED intensity oscillation of C60 growth on GaAs substrates

Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C₆₀ layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C₆₀ layers, suggesting that C₆₀ layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C₆₀ layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C₆₀ molecules. This phenomenon is explained by the model that C₆₀ absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.     

Interfacial behavior of alkyltrichlorosilane monolayers on silicon: Control of flat-band potential and surface state distribution using chain length variation

The passivating behavior of octadecyltrichlorosilane (C₁₈), dodecyltrichlorosilane (C₁₂) and octyltrichlorosilane (C₈) self-assembled monolayers (SAMs) on Si(1 0 0), has been quantitatively compared using cyclic voltammetry and impedance analysis in the presence and absence of an external redox probes like ferrocene. In all these cases, Fourier transform infra red (FTIR) spectroscopy and contact angle measurements give clear evidence for the presence of a closely packed, oriented and hydrophobic monolayer. The electron transfer behavior of ferrocene is found to be drastically affected by the presence of monolayer and the reasons for such significant variation are analyzed in terms of the change in resistance, dielectric thickness and coverage of the monolayer. Double layer capacitance is found to decrease systematically with increasing the chain length of the monolayer suggesting a smooth variation in the “plane of closest approach” with the thickness of the monolayer, despite the presence of a space charge layer on Si electrode. Comparison of the electrochemical properties of the SAM-derivatized Si electrodes with that of a bare Si electrode using impedance analysis exhibits a four order of magnitude decrease in the apparent rate constant of ferrocene oxidation due to the barrier provided by various monolayers (C₈, C₁₂, C₁₈). A peak in the capacitance-potential curve presumably, due to surface states, is suppressed with an increase in the chain length of the monolayer. In addition, a positive shift in flat-band potential (E_fb) with the monolayer chain length, suggests the covalent coupling of the silane monolayer.     

The first synthesis of a graphite bis(oxalato)borate intercalation compound

A new graphite intercalation compound containing the bis(oxalato)borate anion, B[OC(O)C(O)O]₂⁻, is prepared for the first time by chemical oxidation of graphite with fluorine gas in the presence of a solution containing the intercalate anion in anhydrous hydrofluoric acid. The products of stage 1-3 compounds are characterized by powder X-ray diffraction, thermogravimetric analysis, and elemental analyses. X-ray diffraction data indicate a standing-up orientation for the borate anion, with long axis perpendicular to the graphene sheets. Elemental analyses provide x and δ for the nominal composition of C_xB[OC(O)C(O)O]₂·δF, where the chelate borate and fluoride are co-intercalates, and indicate a low borate, and high fluoride, intercalate content as compared to anion packing in other graphite intercalation compounds.     

金属衬底上高质量大面积石墨烯的插层及其机制

石墨烯作为一种新型二维材料,因其优异的性质,在科学和应用领域具有非常重要的意义.而其超高的载流子迁移率、室温量子霍尔效应等,使其在信息器件领域备受关注.如何获得高质量并且与当代硅基工艺兼容的石墨烯功能器件,是未来将石墨烯应用于电子学领域的关键.近年来,研究人员发展了一种在外延石墨烯和金属衬底之间实现硅插层的技术,将金属表面外延石墨烯高质量、大面积的特点与当代硅基工艺结合起来,实现了无需转移且无损地将高质量石墨烯置于半导体之上.通过系统的实验研究并结合理论计算,揭示了插层过程包含四个主要阶段:诱导产生缺陷、异质原子插层、石墨烯自我修复和异质原子扩散成膜,并证实了这一插层机制的普适性.拉曼和角分辨光电子能谱实验结果表明,插层后的石墨烯恢复了本征特性,接近自由状态.此外,还实现了多种单质元素的插层.不同种类的原子形成不同的插层结构,从而构成了多种石墨烯/插层异质结.这为调控石墨烯的性质提供了实验基础,也展现了该插层技术的普适性.     

X-ray study of the order—disorder transition in high-stage alkali metal intercalated graphite single crystals

Graphite intercalation compounds display a variety of structural properties because of their composite nature (graphite + intercalate) and their layered arrangement. Alkali metal intercalated graphite compounds undergo order-disorder phase transitions when the temperature is varied in the range 300–10 K. The disordered state shows true two-dimensional character, whereas three-dimensional coupling takes place on ordering. Results of single-crystal X-ray diffractometric and photographic studies of stage-2 KC₂₄ single crystals are presented. The positional and orientational correlations of the modulated liquid phase have been studied from 300 K down to the temperature transition T_u = 123.5° K. At the transition, the hexagonal incommensurate solid structure of the alkali metal is modulated by the graphite potential. This transition is discussed in terms of the relaxed-close packed structure model (Dicenzo, 1982). At low temperature a second transition takes place at T_L ≈ 95 K. It is found to correspond to the breaking of the 2D hexagonal symmetry of the K layer.     

Alkali metal intercalation into SnS2

The intercalation of sodium and potassium into the layered semiconductor SnS₂ has been investigated by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and ion scattering spectroscopy (ISS). After deposition of the alkali metals onto (0001) cleavage planes of SnS₂ in ultra high vacuum (UHV), semiconducting intercalation phases were formed. They seem to be homogeneous and disordered under the given experimental conditions. The valence electrons of the alkali metals are transferred into electronic states of the host lattice, whose valence band density of states changes significantly during intercalation. The underlying changes of the binding properties of the host lattice are discussed. The course of intercalation can be separated into three phases. During an induction period the concentration of the alkali metal on the surface remains very small, the electronic states of the substrate are shifted by band bending. During an intercalation period the topotactic reaction proceeds. After reaching saturation compositions of the intercalation phase at the surface, the alkali metal diffuses into the bulk. Crystal or surface defects seem to have a significant influence on the kinetics of intercalation and on the stoichiometry of the intercalation compounds.     

Graphene oxide with improved electrical conductivity for supercapacitor electrodes

Predominant few-layer graphene (FLG) sheets of high electrical conductivity have been synthesized by a multi-step intercalation and reduction method. The electrical conductivity of the as-synthesized FLG is measured to be ∼3.2 × 10⁴ S m⁻¹, comparable to that of pristine graphite. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman analysis reveal that the as-synthesized FLG sheets have large areas with single and double layers. The specific capacitance of 180 F g⁻¹ is obtained for the FLG in a 1 M Na₂SO₄ aqueous electrolyte by integrating the cyclic voltammogram. The good capacitive behavior of the FLG is very promising for the application for next-generation high-performance electrochemical supercapacitors.     

Preparation of CuInGeSe4 thin films by selenization method using the Cu-In-Ge evaporated layer precursors

CuInGeSe₄ quaternary compounds are known to have a chalcopyrite-like structure and have band gaps of about 1.3 eV, suitable for optimum conversion efficiency for solar cells. We have prepared the CuInGeSe₄ thin films by the selenization method using the Cu-In-Ge evaporated layer precursors. The analyses of X-ray diffraction show that the single phase of CuInGeSe₄ is obtained by the selenization of precursors at 450-500 °C. The SEM observation of film surface shows that the grain sizes are in the order of 1-2 μm. The band gaps of selenized films close to 1.6 eV are wider than that of bulk crystals (about 1.3 eV). These films have p-type conduction and higher electrical resistivities than more 10⁵ Ω cm at room temperature.     

A green synthetic approach to graphene nanosheets for hydrogen adsorption

A green and facile strategy of preparing graphene by reducing exfoliated graphite oxide (GO) with glucose was developed in this study. The as-prepared samples were characterized by X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FT-IR), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM) and Atomic force microscopy (AFM). The characterization results indicated that the graphene sheets (GS) were of high quality with smooth surface, rich pore structure and few layer graphene. The samples have a BET specific surface area of 1205.8 m² g⁻¹ measured by N₂ adsorption at 77 K. The hydrogen storage capacity of 2.7 wt.% at 298 K and 25 bar demonstrated that the as-prepared graphene employing glucose as reductant is supposed to be a promising material with outstanding property for hydrogen storage.