Comparable charge transport property based on S…S interactions with that of π-π stacking in a bis-fused tetrathiafulvalene compound

Compact molecular packing with short π-π stacking and large π-overlap in organic semiconductors is desirable for efficient charge transport and high carrier mobility.Thus charge transport anisotropy along different directions is commonly observed in organic semiconductors.Interestingly,in this article,we found that comparable charge transport property were achieved based on the single crystals of a bis-fused tetrathiafulvalene derivative(EM-TTP) compound along two interaction directions,that is,the multiple strong S…S intermolecular interactions and the π-π stacking direction,with the measured electrical conductivity and hole mobility of 0.4 S cm~(-1),0.94 cm~2 V~(-1) s~(-1) and 0.2 S cm~(-1),0.65 cm2 V~(-1) s~(-1),respectively.This finding provides us a new molecular design concept for developing novel organic semiconductors with isotropic charge transport property through the synergistic effect of multiple intermolecular interactions(such as S…S interactions) and π-π stacking.     

Zur Bedeutung von V2O3(OH)4(g) für den chemischen Transport von V2O5(s) in Anwesenheit von Wasser. Nachweis des Gasteilchens,thermodynamische Daten und Modellrechnungen

V₂O₃(OH)₄(g), Proof of Existence, Thermochemical Characterization, and Chemical Vapor Transport Calculations for V₂O₅(s) in the Presence of Water By use of the Knudsen-cell mass spectrometry the existence of V₂O₃(OH)₄(g) is shown. For the molecules V₂O₃(OH)₄(g), V₄O₁₀(g), and V₄O₈(g) thermodynamic properties were calculated by known Literatur data. The influence of V₂O₃(OH)₄(g) for chemical vapor transport reactions of V₂O₅(s) with water ist discussed. Δ_BH°(V₂O₃(OH)₄(g), 298) = –1920 kJ · mol^–1 and S°(V₂O₃(OH)₄(g), 298) = 557 J · K^–1 · mol^–1, Δ_BH°(V₄O₁₀(g), 298) = –2865,6 kJ · mol^–1 and S°(V₄O₁₀(g), 298) = 323.7 J · K^–1 · mol^–1, Δ_BH°(V₄O₈(g), 298) = –2465 kJ · mol^–1 and S°(V₄O₈(g), 298) = 360 J · K^–1 · mol^–1.     

Selenophene‐Flanked Diketopyrrolopyrrole Based Conjugated Polymers for Ambipolar Field‐Effect Transistors

The development of selenophene‐flanked DPP (SeDPP) based copolymers, especially for the ambipolar ones, lags behind other aromatic group flanked DPP‐based polymers. Herein, we report two new ambipolar SeDPP‐based conjugated polymers. One is the alternating polymer PSeDPPFT with normal SeDPP and 3,4‐difluorothiophene units. The other is PSeFDFT , in which the electron acceptor unit is replaced by a new SeDPP derivative, referred as to half‐fused SeDPP. The more planar structure of half‐fused SeDPP endows the backbone of PSeFDFT with good rigidity and planarity. Both polymers exhibit ambipolar transporting properties in air. The PSeFDFT based field‐effect transistors (FETs) display higher and more balanced ambipolar properties with μ_h^ave of 0.27 cm²·V^–1·s^–1, μ_e^ave of 0.18 cm²·V^–1·s^–1, and μ_h^ave/μ_e^ave of 1.5 than those of PSeDPPFT (μ_h^ave = 0.11 cm²·V^–1·s^–1, μ_e^ave = 0.042 cm²·V^–1·s^–1, and μ_h/μ_e = 2.6). This is attributed to the more planar structure, lower LUMO level, higher HOMO level, and better interchain packing orientations of PSeFDFT by comparing with PSeDPPFT . Therefore, a new molecular design strategy to modulate the hole and electron transporting properties is proposed for conjugated D‐A polymers.     

Photoluminescence and photocatalytic properties of Er<Superscript>3+</Superscript>-doped In<Subscript>2</Subscript>O<Subscript>3</Subscript> thin films prepared by sol–gel: application to Rhodamine B degradation under solar light

The effect of Er³⁺ doping (1%) on the structural, optical and photocatalytic properties of In₂O₃ thin films deposited on quartz substrates by spin coating was investigated. The In₂O₃:1% Er³⁺ films, annealed in the temperature range 800–1000 °C, were characterized by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy, UV–Vis spectroscopy, ellipsometry and photoluminescence (PL). The films are polycrystalline with a cubic structure and the lattice parameter increases with the incorporation of Er³⁺ owing to its larger radius. The SEM images of the film show a granular morphology with large grains (~ 200 nm). The doped In₂O₃ film exhibits less transparency than In₂O₃ in the UV–visible region with band gaps of 3.42 and 3.60 eV, respectively. PL shows strong lines at 548 and 567 nm, assigned to Er³⁺ under direct excitation at 532 nm. The energy diagram of the junction In₂O₃:1% Er³⁺/Na₂SO₄ (0.1 M) solution plotted from physical and photoelectrochemical characterizations shows the feasibility of the films for Rhodamine B (RhB) degradation under solar light. The conduction band at 2.22 V deriving from the In³⁺:5s orbital is suitably positioned with respect to the O₂/O ₂ ^· level (~ 1.40 V_SCE), leading to oxidation of 32% of 10 ppm RhB within 40 min of solar irradiation.     

Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films,Their Characterization and Transistor Performance under Illumination.

Multilayered heterostructures comprising of In₂O₃, SnO₂, and Al₂O₃ were studied for their application in thin-film transistors (TFT). The compositional influence of tin oxide on the properties of the thin-film, as well as on the TFT characteristics is investigated. The heterostructures are fabricated by atomic layer deposition (ALD) at 200 °C, employing trimethylindium (TMI), tetrakis(dimethylamino)tin (TDMASn), trimethylaluminum (TMA), and water as precursors. After post-deposition annealing at 400 °C the thin-films are found to be amorphous, however, they show a discrete layer structure of the individual oxides of uniform film thickness and high optical transparency in the visible region. Incorporation of only two monolayers of Al₂O₃ in the active semiconducting layer the formation of oxygen vacancies can be effectively suppressed, resulting in an improved semiconducting and switching behavior. The heterostacks comprising of In₂O₃/SnO₂/Al₂O₃ are incorporated into TFT devices, exhibiting a saturation field-effect mobility (μ_sat) of 2.0 cm² ⋅ V⁻¹ s⁻¹, a threshold-voltage (V_th) of 8.6 V, a high current on/off ratio (I_On/I_Off) of 1.0×10⁷, and a subthreshold swing (SS) of 485 mV ⋅ dec⁻¹. The stability of the TFT under illumination is also altered to a significant extent. A change in the transfer characteristic towards conductive behavior is evident when illuminated with light of an energy of 3.1 eV (400 nm).     

Synthesis,Structure and Property of a Dawson-type Arsenomolybdate with an Appended AsIII Cap

An inorganic–organic hybrid compound, (H₂bpy)₃[As^IIIAs₂ ^VMo₁₅ ^VIMo₃ ^VO₆₂]·3H₂O (bpy: 4,4′-bipyridine) (1) has been synthesized under hydrothermal conditions and characterized by elemental analysis, X-ray photoelectron spectroscopy (XPS), X-ray powder diffraction, IR spectrum, UV–Vis spectrum, thermogravimetric analysis and single-crystal X-ray diffraction. The crystallographic analysis reveals that compound 1 is composed of a Wells–Dawson polyoxoanion [As₂ ^VMo₁₅ ^VIMo₃ ^VO₆₂]^9? with the mixed valence of Mo^V,VI, which acts as a tetradentate ligand coordinating with the As^III cation to form the mixed valence As^III,V containing arsenomolybdate with the single cap structure in a chelate coordination mode. In the solid state, compound 1 shows a 3D supramolecular structure through hydrogen-bonding interactions (C–H···O, N–H···O, N–H···N). In addition, compound 1 exhibits reversible multi-electron redox processes and effective electrocatalytic activities towards the reduction of H₂O₂, NaNO₂ and KBrO₃. Moreover, compound 1 is used as a reducing agent of the graphene oxide to prepare graphene by a green chemistry type one-step synthesis method, which is characterized by XPS, Raman spectroscopy, PXRD, IR, scanning electron microscopy and transmission electron microscopy.     

The mono-, sesqui-, and dibromides of indium: InBr,In2Br3, and InBr2

Of the four reduced indium bromides, InBr, In₂Br₃, InBr₂, and In₄Br₇, synthesis, crystal growth and structure determination of the first three is reported. InBr (orthorhombic), Cmcm, Z = 4, a = 446.6(1), b = 1236.8(2), c = 473.9(1) pm, V_m = 39.42(1) cm³ mol^?1) crystallizes with the TlI-type structure. In₂Br₃ (orthorhombic, Pnma, Z = 16, a = 1300.6(5), b = 1649.8(5), c = 1289.7(9) pm, V_m = 104.16(9) cm³ mol ^?1), isotypic with Ga₂Br₃, is according to In₂[In₂Br₆] a mixed-valence In^I–In^II-bromid with eclipsed [In₂Br₆]^2? groups with d(In–In) = 268.8 and 271.6 pm, respectively. InBr₂(?In[InBr₄]) is a mixed-valence In^I? In^III bromide with the GaCl₂-type structure (orthorhombic, Pnna, Z = 8, a = 798.6(2), b = 1038.5(2), c = 1042.5(5) pm, V_m = 65.09(4) cm³ mol^?1).     

Effects of silica nanoparticle addition on polymer semiconductor wettability and carrier mobility in solution‐processable organic transistors on hydrophobic substrates

The effects of the addition of silica nanoparticles (SNPs) on wettability of regioregular poly(3‐hexylthiophene) (P3HT) organic semiconductor solutions on hydrophobic substrates and the carrier mobility in organic field‐effect transistors (OFETs) made of these films are investigated. The dewetting of films made from P3HT solutions on hydrophobic substrates modified with octadecyltrichlorosilane (ODTS) is markedly suppressed after the addition of SNPs with phenyl surfactants. This enables us to fabricate continuous P3HT/SNPs films with high crystallinity by the conventional spin‐coating technique, leading to higher mobility compared with P3HT FETs fabricated on non‐modified substrates. Moreover, the addition of SNPs with larger diameters compensates for the degradation of mobility associated with the increase in the concentration of SNPs. Solution‐processed P3HT/SNPs FETs on ODTS‐modified substrates exhibit a field‐effect mobility of 1.3 × 10^?2 cm² V^?1 s^?1, which is almost comparable to that of P3HT FETs without SNPs (2.1 × 10^?2 cm² V^?1 s^?1). © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 509–516     

溶液法制备氧化锌半导体薄膜及其顶栅极晶体管器件

采用旋涂法用浓度分别为0.05,0.10和0.25 mol·L^-1的氧化锌前躯体溶液制备了氧化锌薄膜,并且制备了基于氧化锌多层膜的顶栅极晶体管器件,其中以利用光刻工艺刻蚀的氧化铟锡为源漏电极。通过原子力显微镜(AFM)和X-射线衍射(XRD)分别表征了薄膜的形貌以及结晶情况,并且讨论了前躯体的浓度顺序对氧化锌多层膜的影响。按照浓度从大到小的顺序依次旋涂前躯体溶液制备的氧化锌薄膜表现出了较高的载流子迁移率(7.1×10^-3 cm²·V^-1·s^-1),而按照浓度从小到大的顺序依次旋涂前躯体溶液制备的氧化锌薄膜的载流子迁移率为5.2×10^-3 cm²·V^-1·s^-1。文中通过对两种多层薄膜的形貌和结晶性能的分析表明影响顶栅极薄膜晶体管性能的主要因素是薄膜的粗糙度。平整的薄膜有利于形成较好的半导体层/绝缘层接触界面,从而有利于提高器件的载流子迁移率。     

Density functional theory study on organic semiconductor for field effect transistors: Symmetrical and unsymmetrical porphyrazine derivatives with annulated 1,2,5-thiadiazole and 1,4-diamyloxybenzene moieties

Density functional theory (DFT) calculations were carried out to investigate the organic field effect transistor (OFET) performance of the symmetrical metal-free tetrakis (1,2,5-thiadiazole) porphyrazine (S₄)PzH₂ and tetrakis (1,4-diamyloxybenzene) (A₄)PzH₂ as well as the low-symmetry metal-free porphyrazine with annulated 1,2,5-thiadiazole and 1,4-diamyloxybenzene groups in the ratio 2:2 (cis) and 1:3, that is, (cis-S₂A₂)PzH2 and (SA₃)PzH₂, (S = 1,2,5-thiadiazole ring, A = annulated 1,4-diamyloxy-benzene ring, Pz = porphyrazine) in terms of the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy, ionization energy (IE), electron affinity (EA), and their reorganization energy (λ) during the charge-transport process. On the basis of Marcus electron transfer theory, electronic couplings (V) and field effect transistor (FET) properties for the four compounds with known crystal structure have been calculated. The electron transfer mobility (μ₋) is revealed to be 0.056 cm²·V⁻¹·s⁻¹ for (S₄)PzH₂. The hole transfer mobility (μ₊) is 0.075, 0.098, and 8.20 cm²·V⁻¹·s⁻¹ for (cis-S₂A₂)PzH₂, (SA₃)PzH₂, and (A₄)PzH₂, respectively. The present work represents the theoretical effort towards understanding the OFET properties of symmetrical and unsymmetrical porphyrazine derivatives with annulated 1,2,5-thiadiazole and 1,4-diamyloxybenzene. Supported by the National Natural Science Foundation of China (Grant No. 50673051) and Beijing Municipal Commission of Edueation     

Butterfly-like Shape Liquid Crystals Based Fused-Thiophene as Unidimensional Ambipolar Organic Semiconductors with High Mobility

Mesomorphous butterfly-like shape molecules based on benzodithiophene, benzodithiophene-4,8-dione and cyclopentadithiophen-4-one core moieties were efficiently synthesized by the Suzuki-Miyaura coupling and Scholl oxidative cyclo-dehydrogenation reactions’ tandem. Most of the butterfly molecules spontaneously self-organize into columnar hexagonal mesophase. The electron-deficient systems possess strong solvent-gelling ability but are not luminescent, whereas the electron-rich terms do not form gels but strongly emit light between 400 and 600 nm. The charge carrier mobility was also measured by time-of-flight transient photocurrent technique in the mesophases for some of the compounds. They display hole-transport performances with positive charge mobility in the 10⁻³ cm⁻² V⁻¹ s⁻¹ range, consistent with the high degree of ordering and stability of the columnar superstructures. In particular, the mesogen with a benzodithiophen-4,8-dione core shows ambipolar charge carrier transport with both high electron (μ_e=6.6×10⁻³ cm⁻² V⁻¹ s⁻¹) and hole (μ_h=4.5×10⁻³ cm⁻² V⁻¹ s⁻¹) mobility values.     

Two Hybrid Compounds Constructed from Vanadate Clusters and Secondary Metal‐Bis(imidazole) Subunits

Two new inorganic–organic vanadate hybrid compounds [Mn(Hbbi)₂(V₄O₁₂)] ( 1 ) and [Cd(Hbbi)₂(V₄O₁₂)] ( 2 ) (bbi = 1,1’‐(1,4‐butanediyl)bis(imidazole)) were hydrothermally synthesized and characterized by elemental analyses, IR spectroscopy, TG and single‐crystal X‐ray diffraction. The two compounds crystallize in monoclinic system, P2₁/c space group with a = 8.556(5) Å, b = 10.761(5) Å, c = 16.917(5) Å, β = 93.032(5) ^o, V = 1555.4(12) Å³, Z = 2, R = 0.0390 for 1 and a = 8.657(5) Å, b = 10.743 (5) Å, c = 16.864 (5) Å, β = 93.81(5)^o, V = 1564.9 (12) Å³, Z = 2, R = 0.0717 for 2 . Single‐crystal X‐ray diffraction analysis reveals that the two compounds are isostructural and both consist of one‐dimensional (1D) chains, which are constructed from vanadate anion clusters and [M(Hbbi)₂]⁴⁺ cation groups [M = Mn^II ( 1 ), Cd^II ( 2 )]. Moreover, the polymeric chains are ultimately packed into a three‐dimensional (3D) supramolecular framework through C–H ··· O and N–H ··· O hydrogen bonding interactions.     

Simultaneous morphological stability and high charge carrier mobilities in donor–acceptor block copolymer/PCBM blends

Donor–acceptor block copolymers (BCP), incorporating poly(3‐hexylthiophene) (P3HT), and a polystyrene copolymer with pendant fullerenes (PPCBM) provide desired stable nanostructures, but mostly do not exhibit balanced charge carrier mobilities. This work presents an elegant approach to match hole and electron transport in BCP by blending with molecular PCBM without causing any macrophase separation. An insufficient electron mobility of PPCBM can be widely compensated by adding PCBM which is monitored by the space‐charge limited current method. Using X‐ray diffraction, atomic force microscopy, and differential scanning calorimetry, we verify the large miscibility of the PPCBM:PCBM blend up to 60 wt % PCBM load forming an amorphous, molecularly mixed fullerene phase without crystallization. Thus, blending BCP with PCBM substantially enhances charge transport achieving an electron mobility of μ_e=(3.2 ± 1.7) × 10^?4 cm²V^?1s^?1 and hole mobility of μ_h=(1.8 ± 0.6) × 10^?3 cm²V^?1s^?1 in organic field‐effect transistors (OFET). The BCP:PCBM blend provides a similarly high ambipolar charge transport compared to the established P3HT:PCBM system, but with the advantage of an exceptionally stable morphology even for prolonged thermal annealing. This work demonstrates the feasibility of high charge transport and stable morphology simultaneously in a donor–acceptor BCP by a blend approach. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1125–1136     

An Azulene‐Containing Low Bandgap Small Molecule for Organic Photovoltaics with High Open‐Circuit Voltage

A simple azulene‐containing squaraine dye ( AzUSQ ) showing bandgap of 1.38 eV and hole mobility up to 1.25×10^?4 cm² V^?1 s^?1 was synthesized. With its low bandgap, an organic photovoltaic (OPV) device based on it has been made that exhibits an impressive open‐circuit voltages (V_oc) of 0.80 V. Hence, azulene might be a promising structural unit to construct OPV materials with simultaneous low bandgap, high hole mobility and high V_oc.     

Synthesis and characterization of poly(1,4‐bis((E)‐2‐(3‐dodecylthiophen‐2‐yl)vinyl)benzene) derivatives

New amorphous semiconducting copolymers, poly(9,9‐dialkylfluorene)‐alt‐(3‐dodecylthienyl‐divinylbenzene‐3‐dodecylthienyl) derivatives (PEFTVB and POFTVB), were designed, synthesized, and characterized. The structure of copolymers was confirmed by H NMR, IR, and elemental analysis. The copolymers showed very good solubility in organic solvents and high thermal stability with high T_g of 178–185 °C. The weight average molecular weight was found to be 107,900 with polydispersity of 3.14 for PEFTVB and 76,700 with that of 3.31 for POFTVB. UV–vis absorption studies showed the maximum absorption at 428 nm (in solution) and 435 nm (in film) for PEFTVB and at 430 nm (in solution) and 436 nm (in film) for POFTVB. Photoluminescence studies showed the emission at 498 nm (in solution) and 557 nm (in film) for PEFTVB and at 498 nm (in solution) and 536 nm (in film) for POFTVB. The solution‐processed thin‐film transistors showed the carrier mobility of 2 × 10^?4 cm² V^?1 s^?1 for PEFTVB‐based devices and 2 × 10^?5 cm² V^?1 s^?1 for POFTVB‐based devices. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 3942–3949, 2010     

Rhodanine flanked indacenodithiophene as non-fullerene acceptor for efficient polymer solar cells

A fused-ring electron acceptor IDT-2BR1 based on indacenodithiophene core with hexyl side-chains flanked by benzothiadiazole rhodanine was designed and synthesized.In comparison with its counterpart with hexylphenyl side-chains(IDT-2BR),IDT-2BR1exhibits higher highest occupied molecular orbital(HOMO)energy but similar lowest unoccupied molecular orbital(LUMO)energy(IDT-2BR1:HOMO=-5.37eV,LUMO=-3.67eV;IDT-2BR:HOMO=-5.52eV,LUMO=-3.69eV),red-shifted absorption and narrower bandgap.IDT-2BR1 has higher electron mobility(2.2×10~(-3)cm~2 V~(-1)s~(-1))than IDT-2BR(3.4×10~(-4)cm~2 V~(-1)s~(-1))due to the reduced steric hindrance and ordered molecular packing.Fullerene-free organic solar cells based on PTB7-Th:IDT-2BRl yield power conversion efficiencies up to 8.7%,higher than that of PTB7-Th:IDT-2BR(7.7%),with a high open circuit voltage of0.95 V and good device stability.     

Cavity ring‐down spectroscopic study of the kinetics of the reactions of FCO radicals with O2 and NO at 295 K

Cavity ring‐down UV absorption spectroscopy was used to study the kinetics of the recombination reaction of FCO radicals and the reactions with O₂ and NO in 4.0–15.5 Torr total pressure of N₂ diluent at 295 K. k(FCO + FCO) is (1.8 ± 0.3) × 10⁻¹¹ cm³ molecule⁻¹ s⁻¹. The pressure dependence of the reactions with O₂ and NO in air at 295 K is described using a broadening factor of Fc = 0.6 and the following low (k₀) and high (k_∞) pressure limit rate constants: k₀(FCO + O₂) = (8.6 ± 0.4) × 10⁻³¹ cm⁶ molecule⁻¹ s⁻¹, k_∞(FCO + O₂) = (1.2 ± 0.2) × 10⁻¹² cm³ molecule⁻¹ s⁻¹, k₀(FCO + NO) = (2.4 ± 0.2) × 10⁻³⁰ cm⁶ molecule⁻¹ s⁻¹, and k_∞ (FCO + NO) = (1.0 ± 0.2) × 10⁻¹² cm³ molecule⁻¹ s⁻¹. The uncertainties are two standard deviations. © 2001 John Wiley & Sons, Inc. Int J Chem Kinet 33: 130–135, 2001     

Yttrium Doped Copper (II) Oxide Hole Transport Material as Efficient Thin Film Transistor

This work reports development of yttrium doped copper oxide (Y−CuO) as a new hole transport material with supplemented optoelectronic character. The pure and Y-doped CuO thin films are developed through a solid-state method at 200 °C and recognized as high performance p-channel inorganic thin-film transistors (TFTs). CuO is formed by oxidative decomposition of copper acetylacetonate, yielding 100 nm thick and conductive (40.9 S cm⁻¹) compact films with a band gap of 2.47 eV and charge carrier density of ∼1.44×10¹⁹ cm⁻³. Yttrium doping generates denser films, Cu₂Y₂O₅ phase in the lattice, with a wide band gap of 2.63 eV. The electrical conductivity increases nine-fold on 2 % Y addition to CuO, and the carrier density increases to 2.97×10²¹ cm⁻³, the highest reported so far. The TFT devices perform remarkably with high field-effect mobility (μ_sat) of 3.45 cm² V⁻¹ s⁻¹ and 5.3 cm² V⁻¹ s⁻¹, and considerably high current-on/off ratios of 0.11×10⁴ and 9.21×10⁴, for CuO and Y−CuO films, respectively (at −1 V operating voltage). A very small width hysteresis, 0.01 V for CuO and 1.92 V for 1 % Y−CuO, depict good bias stability. Both the devices work in enhancement mode with stable output characteristics for multiple forward sweeps (5 to −60 V) at −1V_g.     

Four inorganic–organic hybrid complexes built from tetravanadate and macrocyclic oxamide

Four inorganic–organic hybrid compounds, [M₂(CuL)₄(V₄O₁₂)]·2H₂O (M?=?Co (1), Mn (2)), [Mn₂(NiL)₄(V₄O₁₂)]·2H₂O (3), and [Zn₂(CuL)₄(V₄O₁₂)]·2CH₃OH·2H₂O (4) (M′L, H₂L?=?2,3-dioxo-5,6,14,15-dibenzo-1,4,8,12-tetraazacyclo-pentadeca-7,13-dien), have been synthesized and characterized by elemental analysis, IR, UV, fluorescence spectra, and X-ray diffraction analysis. Single-crystal X-ray analysis reveal that both [V₄O₁₂]^4? and M₂V₄ adapt a chair-like configuration in four structures. The cyclovanadate group [V₄O₁₂]^4? is a tetradentate bridging ligand linking two [M(M′L)₂]²⁺ fragments, producing centroantisymmetric heterometallic hexanuclear [M₂M′₄] complexes. The variable-temperature magnetic susceptibility measurements (2–300?K) of 1 and 2 show weak antiferromagnetic interactions.     

The Synthesis and Characterization of [4-CH3OC6H4CH2NH3]4P2O7·6H2O

Inorganic–organic hybrid compounds exhibit interesting properties in several application areas. In this regard, chemical preparation and characterization by X-ray diffraction, thermal analysis, and IR spectroscopy are given for a new organic cation diphosphate [4-CH₃OC₆H₄CH₂NH₃]₄P₂O₇·6H₂O. This later crystallizes in a C2/c unit cell with a = 38.238(6)Å, b = 6.453(1)Å, c = 16.942(7)Å; β = 97.60(4)°; Z = 4; and V = 4144(2)ų and D_x = 1.377 g·cm^?3. Its crystal structure has been determinated and refined to R = 0.044, using 7978 independent reflections. This atomic arrangement consists of inorganic layers built up from P₂O₇ ^4? anions and water molecules. On these layers, which are parallel to the (b, c) planes, the (4-CH₃OC₆H₄CH₂NH₃)⁺ cations are anchored through multiple hydrogen bonds.