石墨烯氧化程度对Ni(OH)2赝电容性能的影响

基于密度泛函理论(DFT)设计了一系列不同氧化程度的还原氧化石墨烯片(rGNOs)并研究了其表面的氧化缺陷与吸附的氢氧化镍(Ni(OH)₂)之间的相互作用. 结果发现,rGNOs表面的含氧基团与Ni(OH)₂之间的吸附能与含氧基团的氧化程度相关. 在吸附Ni(OH)₂后,rGNOs的原子间距和电荷分布的变化也都受rGNOs表面的含氧缺陷的氧化程度影响. 理论计算的结果与实验观察的结果一致并能给出合理的解释.我们用简单的恒电位电化学沉积法有效地在rGNOs表面制备了粒径只有5 nm的Ni(OH)₂纳米粒子. 在Ni(OH)₂/rGNOs制备过程中,氧化石墨烯的电化学还原是关键步骤. Ni(OH)₂上吸附的Ni(OH)₂因具有更高的吸附能而使其与在镍膜表面直接吸附的Ni(OH)₂(在5 mV·s^-1下比电容为656 F·g^-1)相比具有更高的比电容值(在5 mV·s^-1下为1591 F·g^-1).rGNOs在吸附Ni(OH)₂后构型和电荷分布的变化导致Ni(OH)₂具有更低的等效串联电阻和更佳的频率响应.Ni(OH)₂/rGNOs优异的赝电容特性表明其有潜力成为新型赝电容器材料.     

纳米多孔结构镍基复合膜电极的电化学法制备及其电容特性

通过对电沉积法得到的Ni-Cu合金镀层进行电化学去合金化处理, 制备了纳米多孔结构金属镍膜. 采用循环伏安法对多孔金属镍膜在1 mol·L^-1 KOH溶液中进行阳极氧化处理, 获得了纳米多孔结构的镍基复合膜电极. 应用扫描电子显微镜(SEM)、X射线衍射(XRD)、X射线光电子能谱(XPS)和电化学技术对所制备的膜电极的物理性质及赝电容特性进行了表征. SEM、XRD和XPS的测试结果表明, 所制备的纳米多孔结构镍基复合膜由Ni、Ni(OH)₂和NiOOH组成. 电化学实验结果显示, 该复合膜在20 A·g^-1的充放电电流密度下, 给出了578 F·g^-1的初始比电容; 在1000次充放电循环后, 它的比电容值为544 F·g^-1, 电容保持率为94%. 纳米多孔结构有利于KOH电解液的渗透, 从而促进反应物种在电极内部的传输; 纳米多孔的金属镍基体可以提高Ni(OH)₂膜的电子导电性; 纳米大小的Ni(OH)₂颗粒能够缩短质子的固相扩散路径. 上述因素是所制备的纳米多孔结构镍基复合膜电极具有优异赝电容特性的主要原因.     

溶胶-凝胶-水热晶化法制备锐钛矿TiO2纳米膜的耐蚀性能

以钛酸正丁酯为前驱体, 采用溶胶-凝胶-水热晶化法在不锈钢(SS)表面制备TiO₂纳米膜. 利用X射线衍射(XRD)、Raman光谱、场发射扫描电子显微镜(SEM)、原子力显微镜(AFM)和俄歇电子能谱(AES)表征了TiO₂纳米膜的晶型、表面形貌和表面化学组成. 通过极化曲线和电化学阻抗谱(EIS)研究了TiO₂纳米膜的耐蚀性能. 170 °C下水热晶化制备的锐钛矿TiO₂与450 °C焙烧制备的锐钛矿TiO₂的结晶度类似, 但两种TiO₂薄膜的表面结构存在明显差异, 水热晶化法制备的TiO₂纳米膜在3.5% (w) NaCl溶液中的耐蚀性能优于焙烧法制备的.     

Cu-Sn-P-LiMn2O4纳米复合材料镀层的XPS和AES研究

采用化学复合镀技术，在Q₂₃₅碳钢片表面制备了Cu-Sn-P-LiMn₂O₄纳米复合材料镀层。用扫描电子显微镜(SEM)观察外貌；称重法测定厚度；通过5% NaCl溶液、1% H₂S气体加速腐蚀试验、抗粘性试验及室温氧化试验等多种手段测定其性能。用X-射线光电子能谱(XPS)及俄歇电子能谱(AES)测定其价态及组成。结果表明:Cu-Sn-P-LiMn₂O₄纳米复合材料镀层的性     

NiO纳米片和多孔纳米片自组装的空心微球的无模板水热法制备与磁学性质

报道一种非常简单的制备NiO和Ni(OH)₂空心微球的无模板水热法, 即通过NiCl₂与氨水在140 ℃水热反应12 h, 制备了Ni(OH)₂纳米片自组装的空心微球, 经400 ℃热处理2 h得到了NiO空心微球. 采用X射线衍射仪、扫描电镜和透射电子显微镜对产物进行表征, 并在室温下测试了它的磁学性能, 结果表明, Ni(OH)₂空心微球的直径约为3～4 μm, 它是由尺寸1.1～1.3 μm左右的六方相结构的Ni(OH)₂纳米片组装而成; NiO空心微球是由立方相纳米片和多孔纳米片组装而成, 它具有弱的铁磁性, 其矫顽力为583 Oe, 剩余磁化强度为0.213 emu/g. 研究了氨在Ni(OH)₂纳米片的形成与组装过程中的作用, 提出了可能的生长机理.     

球型Ni(OH)2表面包覆Y(OH)3及其高温充放电性能

应用共沉淀的方法在球型Ni(OH)₂的表面包覆了一层Y(OH)₃,并研究了包覆不同含钇量后的球型Ni(OH)₂的高温充放电性能。研究结果表明:包覆Y(OH)₃的球型Ni(OH)₂具有良好的高温充放电性能。其中1C充放电条件下,包覆量为0.3%的Ni(OH)₂较好,0.2C充放电条件下,包覆量为1%的Ni(OH)₂较好。     

FeO(OH)-TiO2/CoPi复合光阳极的制备及其光电催化氧化水性能

采用溶胶-凝胶法制备了TiO₂ 纳米晶, 并通过浸渍技术在其表面引入了FeO(OH). 采用紫外-可见(UV-Vis)吸收光谱确定了引入FeO(OH)的最佳Fe³⁺浓度. 通过电化学法在FeO(OH)-TiO₂光阳极上沉积了催化水分解制备氧气的钴基催化剂(CoPi), 得到了FeO(OH)-TiO₂/CoPi 复合光阳极. 利用透射电镜(TEM), 高分辨透射电镜(HRTEM), X射线衍射(XRD), 扫描电镜(SEM)对TiO₂纳米晶, FeO(OH)-TiO₂以及FeO(OH)-TiO₂/CoPi复合光阳极进行了表征, 采用电化学和光电化学技术研究了中性条件下FeO(OH)-TiO₂/CoPi 复合光阳极的光电催化分解水性能. 结果表明, TiO₂纳米晶为梭形的锐钛矿, 其表面修饰的FeO(OH)为针铁矿型, 且当前驱体溶液中Fe³⁺与TiO₂的质量比为0.05%时得到的FeO(OH)-TiO₂具有最佳的光吸收效果. 形成FeO(OH)-TiO₂/CoPi复合光阳极后, 在光照条件下CoPi 电催化分解水制备氧气的过电位显著降低. TiO₂表面FeO(OH)的引入增加了光阳极对可见光的吸收能力, 同时光阳极表面沉积的CoPi有效地利用了FeO(OH)-TiO₂产生的光生空穴, 将水氧化形成氧气, 从而在光照条件下显著提高了CoPi催化氧化水的效率.     

混合纳米氢氧化镍的球镍电极材料的电化学活性研究

采用配位沉淀法制备出了Ni(OH)₂样品，经XRD测试为β-Ni(OH)₂，TEM测试结果表明其为平均粒径50nm左右的不规则的颗粒。将所制备的纳米Ni(OH)₂按8wt%的比例在球镍中混合后制成电极，可使正极的比容量提高11%左右。热分析表明，纳米Ni(OH)₂的电化学活性高于球镍的电化学活性。激光拉曼光谱的测试结果说明了8wt%混合后制成的纳米电极确实有较好的放电容量，同时也证实了用拉曼光谱可以表征电极材料的充放电     

电化学混合电容器用新型β-Ni(OH)2/CNTs纳米复合物

采用水热合成法制备出一种新型β-Ni(OH)₂/碳纳米管(CNTs)纳米复合物, Ni(OH)₂微晶粒径控制在50～80 nm之间, 与CNTs直径相当, CNTs与Ni(OH)₂质量比为1∶15. 将纳米复合物应用于活性炭(AC)/NiOOH电化学混合电容器, 电化学测试表明: 在0.4 A/g电流条件下, 其放电比容量达279 mAh/g, 是β-Ni(OH)₂理论容量的96.5%; 当电流密度从0.4 A/g增加至8 A/g时, 电容器的容量保持率在76.5%以上, 高倍率充放电特性优异. 此外, 纳米复合物良好的电化学可逆性使AC/NiOOH电化学混合电容器更易活化, 并具有较高的充放电效率和良好的循环稳定性能.     

三维Ni(OH)2/Ni@N掺杂还原氧化石墨烯复合电极的制备及电催化析氢性能

采用脱合金结合两步水热法将3D Ni （OH）₂/Ni与N掺杂还原氧化石墨烯（rGO）结合,成功制备出3D花状Ni （OH）₂/Ni@NG复合电极。通过X射线衍射（XRD）、X射线光电子能谱（XPS）、扫描电子显微镜（SEM）和透射电子显微镜（TEM）表征其物相、价态分布及微观结构。在1 mol·L^-1 KOH溶液中测试其电催化析氢反应（HER）性能。结果表明：Ni （OH）₂/Ni的3D结构增加了电极的活性面积,与N掺杂rGO复合显著提高了电子/离子的传输速率,其过电位为108 mV （η₁₀）,Tafel斜率为114.9 mV·dec^-1,表现出良好的HER催化活性。1 000圈循环伏安法及计时电位法测试表明,Ni （OH）₂/Ni@NG电极均表现出良好的稳定性。     

Analysis the microscopic solid‐based wear process in the chemical mechanical planarization

Chemical mechanical planarization (CMP), being the important technique of realizing the surface planarization, has already been widely applied in the microelectronic and computer industry. The abrasive size employed in the CMP, far less than that employed in the conventional grinding and material removal during CMP, is on the order of atoms or clusters of atoms and molecules. Classical continuum mechanics cannot give a reasonable explanation about the phenomenon in the CMP. Large‐scale classical molecular dynamics simulation of tribology interaction among nanoparticles and materials surface has been carried out to investigate the physical essence of surface planarization. The results show that simultaneous impact of several abrasive particles or the repeated impact of abrasive particles leads to material failure. For individual asperity contact in the CMP, non‐obvious Archard adhesive wear or abrasive wear is observed. The contact area is not entirely dependent upon the external pressure but also closely related to the relative position because of lateral motion between the particles and the substrate. The results also justify that no single wear mechanism dominates all operating conditions; different wear mechanisms operate with their relative importance changing as the sliding conditions change. As the slurry particles slide relative to the wafer surface, the atomic groups experience three stages, namely, interlock, elastic–plastic deformation and finally slip process; the surface planarization is mainly accomplished in the last two stages. Copyright © 2011 John Wiley & Sons, Ltd.     

Strategies for Optimal Chemical Mechanical Polishing (CMP) Slurry Design

Abstract

Chemical mechanical polishing (CMP) has become the preferred route for achieving wafer‐level global planarization in microelectronics device manufacturing. However, the micro‐ to molecular‐level mechanisms that control its performance and optimization are not well understood. In CMP, complex slurry chemistries react with the first few atomic layers on the wafer surfaces forming a chemically modified film. This film is subsequently mechanically abraded by nanosized slurry particles to achieve local and global planarity for multi‐level metalization. For optimal CMP performance, high material removal rates with minimal surface defectivity are required. This can be achieved by controlling the extent of interparticle and particle–substrate interactions, which are facilitated through the manipulation of the slurry composition, solution chemistry, as well as operational parameters. Interparticle interactions must be engineered to maintain slurry stability to minimize the number and extent of surface defects during polishing while maintaining adequate removal rates. The fundamental considerations, which are necessary for the development of high performance CMP slurries, are discussed in this article through model silica CMP systems.     

Synthesis and assembly of ultrathin film of Ni(OH)2 nanoparticles at gas/liquid interface, its high electrocatalytical oxidation toward bio-thiols and selective determination of cysteine

A facile strategy was reported to synthesize and assemble a stable ultrathin film of Ni(OH)₂ nanoparticles at gas/liquid interface where the aqueous phase contained Ni²⁺ and the organic phase was composed of triethylamine toluene solution. The ultrathin film of Ni(OH)₂ nanoparticles that precipitated at the interface was transferred onto the electrode surface for the electrocatalysis of bio-thiols and selective electroanalysis of cysteine. The preparation of Ni(OH)₂ ultrathin film and its transfer to an electrode substrate is very simple. The obtained Ni(OH)₂ ultrathin film modified electrodes are stable, showing high electrochemical oxidation toward bio-thiols and good selectivity toward cysteine in phosphate buffered solution of pH 7.5.     

Role of interaction forces in controlling the stability and polishing performance of CMP slurries

Chemical mechanical polishing (CMP) is an essential step in metal and dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. These requirements are met through the control of chemical and mechanical interactions during the polishing process by engineering the slurry chemistry, particulate properties, and stability. In this study, the performance of surfactant-stabilized silica CMP slurries at high pH and high ionic strengths are investigated with particular emphasis on the particle-particle and particle-substrate interactions. It is shown that for the design of consistently high performing slurries, stability of abrasive particles must be achieved under the dynamic processing conditions of CMP while maintaining sufficient pad-particle-wafer interactions.     

Study on the anodic reaction of Ni in an alkaline solution by transient pH detection based on scanning electrochemical microscopy (SECM)

The anodic reaction of Ni in an alkaline solution was studied by the tip–substrate voltammetry mode of scanning electrochemical microscopy (SECM) and cyclic voltammetry (CV). A platinum microdisc electrode was selected as the tip electrode, which functioned as a pH sensor with transient response capability. The pH value of the solution near the Ni electrode surface varied while the Ni substrate oxidation reaction occurred, and the pH variation could be detected by the tip faradic current. The cyclic voltammogram results showed that two types of hydroxides: i.e. α‐Ni(OH)₂ and β‐Ni(OH)₂ were formed during Ni oxidation in the lower potential region. In the proceedings of α‐Ni(OH)₂ → γ‐NiOOH and β‐Ni(OH)₂ → β‐NiOOH, the process of OH^? concentration decrease in the solution was ahead and behind of electron transfer in the solid phase, respectively. These results indicate that the OH^? adsorption process occurs as an elementary step in the former reaction and the H⁺ diffusion process from the inner to the outer layer of the solid phase occurs as a subsequent step in the latter reaction. The results also revealed that the oxide film on the Ni surface has a two‐layer structure. The real potential of the oxygen evolution reaction (OER) on the Ni surface with different cycles is also analyzed in the paper. Copyright © 2007 John Wiley & Sons, Ltd.     

铜在甲胺介质铁氰化钾化学-机械抛光液中的电化学行为

二甲氧基苯胺;铜在甲胺介质铁氰化钾化学-机械抛光液中的电化学行为     

Oscillatory electrocatalytic oxidation of methanol on an Ni(OH)2 film electrode

A film of Ni(OH)₂ deposited cathodically on a roughened nickel substrate consists of even nanoparticles, which were characterized by atomic-force microscopy (AFM). The mechanism of potential oscillations in the electrocatalytic oxidation of methanol on this film electrode in alkaline medium was studied in situ by means of Raman spectroscopy in combination with electrochemical measurements. The redox change of the nickel hydroxide film, the concentration distribution of methanol in the diffusion layer, and the oxidation products of methanol were characterized in situ by time-resolved, spatial-resolved, and potential-dependent Raman spectroscopy, respectively. Electrochemical reactions, i.e. methanol oxidation and periodic oxygen evolution, coupling with alternately predominant diffusion and convection mass transfer of methanol, account for the potential oscillations that occur during oxidation of methanol above its limiting diffusion current. This mechanism is totally different from that of methanol oxidation on platinum electrodes, for which surface steps, i.e. formation and removal of CO_ad, are essential.This work is dedicated to Professor Gyorgy Horanyi on the occasion of his 70th birthday in recognition of his numerous contributions to field of electrochemical oscillations and electrocatalysis at Ni-hydroxide electrodes.     

Etchant solutions for the removal of Cu(0) in a supercritical CO2-based "dry" chemical mechanical planarization process for device fabrication

The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 mum regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO2 has significant potential for replacing current CMP solvents as a "dry" etching medium because of its unique properties. In working toward a condensed CO2-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO2 using ethyl peroxydicarbonate and a beta-diketone chelating agent.     

石墨烯对Ni（OH）2超级电容器材料电化学行为的影响

研究了氧化缺陷石墨烯对Ni(OH)2电化学性能的增强作用.实验上,由恒电位沉积法在石墨烯基底上制备Ni(OH)2纳米粒子/石墨烯复合材料.TEM观察和电化学测试表明,Ni(OH)2纳米粒子均匀地分散在石墨烯基底上,其粒径为5.0±0.5 nm,体系的质量比电容值为1928 F.g-1.量化计算表明,上述复合材料乃是通过Ni(OH)2与石墨烯表面功能基团的强化学作用相结合而导电的,电子则是自石墨烯基底经氧化缺陷向Ni(OH)2传递,导致Ni(OH)2带负电,从而形成Ni(OH)2纳米粒子的单向导电行为.     

Prefabrication of two-dimensional Ni–W/TiN films on oil-gas X52 steels by pulse electrodeposition

The main aim of this investigation was to prefabricate two-dimensional Ni–W/TiN films on oil-gas X52 steel substrates via pulse electrodeposition (PE). The influences of the TiN content in the bath on the surface morphology, nano-hardness, wear, and corrosion properties of the films were also discussed. The results indicated that the TiN particle size was only ～33 nm in 8 g/L TiN electrolyte, which was ～2.4 times less than that of TiN in 16 g/L solution. The Ni–W/8TiN film exhibited a uniform, smooth surface, and the depression depth and protrusion height were 45.3 nm and 81.7 nm, respectively. Three diffraction peaks at 43.72, 50.78, and 75.26° in the Ni–W/4TiN film emerged as the sharpest and narrowest peaks among the four films. Three XPS peaks for the Ni 2p_3/2 were present at 852.13, 856.35, and 861.87 eV in the Ni–W/8TiN film, corresponding to Ni, Ni²⁺ (Ni(OH)₂), Ni³⁺ (NiOOH) species. Besides, the XPS peak of W 4f_7/2, which located at 33.85 eV belonged to elemental W. The Ni–W/8TiN film had the lowest wear depth and width at 32.1 μm and 5.7 mm, respectively. Only some narrow and shallow scratches were found on the Ni–W/8TiN film surface, showing its outstanding tribological properties among the films tested. In addition, the Ni–W/4TiN film showed the highest mean frictional coefficient of 0.73, which was ～1.6 times more than that of the Ni–W/8TiN film.