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1.
研究了在铁磁(NiFe)/反铁磁(FeMn)双层膜之间,交换偏置的形成过程和热稳定性,特别是NiFe/FeMn的交换偏置作用与FeMn层晶粒尺寸的关系.和以前作者不同的是,本文方法采用非磁性Ni-Fe-Cr合金作缓冲层材料,改变Cr的含量就可以获得不同晶粒尺寸的反铁磁FeMn层.实验表明,晶粒尺寸较小的FeMn产生较强的铁磁/反铁磁交换偏置场;但是,对于较大晶粒的FeMn层,出现交换偏置作用所要的临界厚度较小.这符合Mauri提出的理论模型.交换偏置场的热稳定性实验表明,具有较大晶粒尺寸的FeMn层给出较 关键词: 交换偏置 热稳定性 反铁磁 晶粒尺寸  相似文献   

2.
We present ferromagnetic resonance data from a Py film using both a pulsed inductive microwave magnetometer (PIMM) and conventional FMR. An increase in the damping is seen at low field resonances in the PIMM data from what is expected using conventional FMR. This is explained by the influence of the PIMM’s spatially inhomogeneous excitation field and quantified using an intuitive argument. We demonstrate from this derivation how excitation of non-uniform wavevectors can explain the measured increase in damping at low fields observed by the PIMM. We also present results from a coupled Py and Cobalt system, demonstrating that inductive magnetometry can be a sensitive technique for measuring exchange coupling over interfaces and surfaces.  相似文献   

3.
The temperature dependence of exchange bias and coercivity in a ferromagnetic layer coupled with an antiferromagnetic layer is discussed. In this model, the temperature dependence comes from the thermal instability of the system states and the temperature modulated relative magnetic parameters. Morever, the thermal fluctuation of orientations of easy axes of antiferromagnetic grains at preparing has been considered. From the present model, the experimental results can be illustrated qualitatively for available magnetic parameters. Based on our discussion, we can conclude that soft ferromagnetic layer coupled by hard antiferromagnetic layer may be very applicable to design magnetic devices. In special exchange coupling, we can get high exchange bias and low coercivity almost independent of temperature for proper temperature ranges.  相似文献   

4.
A model for the temperature dependence of exchange bias and coercivity in epitaxial ferromagnetic (FM)/ antiferromagnetic (AFM) bilayers is developed. In this model, the interface coupling includes two contributions, the direct coupling and the spin-flop coupling. The temperature dependence arises from the thermal disturbance to the system, involved in the thermal fluctuations of magnetization of AFM grains and the temperature modulation of the relevant magnetic parameters. In addition, the randomness of original orientations of easy axes of AFM grains after field cooling is taken into account. A self-consistent calculation scheme is proposed and numerical treatment is carried out. The results show that the temperature dependence of exchange bias and coercivity is closely related to the sizes of AFM grains and the interface exchange coupling constants. Especially, the exchange bias will have a peak and the blocking temperature will increase if the spin-flop coupling plays a role. On the other hand, the original orientation distribution of easy axes of AFM grains will affect exchange bias and coercivity prominently. The prediction has been well supported by experiments.Received: 12 May 2004, Published online: 31 August 2004PACS: 75.30.Et Exchange and superexchange interactions - 75.50.Ee Antiferromagnetics - 75.30.Gw Magnetic anisotropy  相似文献   

5.
刘奎立  周思华  陈松岭 《物理学报》2015,64(13):137501-137501
为了研究反铁磁基体中掺杂的金属离子对交换偏置效应的影响, 本文采用非均相沉淀法制备了纳米复合材料. X射线衍射图(XRD)和场发射扫描电子显微镜(SEM) 照片清晰表明CuO纳米复合样品具有统一的颗粒尺寸, 约为80 nm. 通过体系中掺杂磁性金属离子Ni和Fe, 实现了亚铁磁MFe2O4 (M=Cu, Ni)晶粒镶嵌在反铁磁(AFM) CuO 基体中. 在CuO基体中加入少量的Ni能改变两相交界面的磁无序从而生成类自旋玻璃相, 相应提高对铁磁相磁矩的钉扎作用. 同时, 场冷过程中反铁磁相内形成磁畴, 冻结在原始状态或磁场方向上, 畴壁也起到钉扎铁磁自旋的作用, 进而提高交换偏置效应. 随后加入的Ni 会生成各向异性能较大的NiO, 也能够提高交换偏置场. 在带场冷却下, 所有样品均发生垂直交换偏置, 也证明了样品在场冷过程中形成了自旋玻璃相, 正是由于亚铁磁与自旋玻璃相界面上的磁交换耦合, 才导致回线在整个测量范围内发生了向上偏移. 零场冷却和场冷却(ZFC/FC)情况下磁化强度与温度变化曲线(M-T)说明在这些复合材料中的交换偏置效应是由于存在亚铁磁颗粒和类自旋玻璃相界面处的交换耦合作用. 研究发现随着持续掺杂Ni离子, 交换偏置场先缓慢增加后又急剧增加, 生成各向异性能高的反铁磁相NiO 和反铁磁相内的畴态组织是这一结果的原因.  相似文献   

6.
Interlayer exchange coupling that oscillates between antiferromagnetic and ferromagnetic as a function of NiO thickness has been observed in [Pt(5 A)/Co(4 A)](3)/NiO(t(NiO) A)/[Co(4 A)/Pt(5 A)](3) multilayers with out-of-plane anisotropy. The period of oscillation corresponds to approximately 2 monolayers of NiO. This oscillatory behavior is possibly attributed to the antiferromagnetic ordering in NiO. The antiferromagnetic interlayer exchange coupling for the 11 A NiO layer shows an increase in coupling strength with increasing temperature, in agreement with the quantum interference model of Bruno for insulating spacer layers. A coexistence of exchange biasing and antiferromagnetic interlayer exchange coupling has been observed below T=250 K.  相似文献   

7.
The coupling between a ferromagnet and an antiferromagnet can establish a directional anisotropy called exchange bias. In many systems this exchange bias is reduced upon subsequent field cycling, which is referred to as training effects. Numerical simulations of a simple coherent rotation model suggest that the symmetry of the anisotropy in the antiferromagnet is crucial for the understanding of training effects in exchange bias systems. Namely, the existence of multiple antiferromagnetic easy anisotropy axes can initially stabilize a noncollinear arrangement of the antiferromagnetic spins, which relaxes into a collinear arrangement after the first magnetization reversal of the ferromagnet.  相似文献   

8.
We employ antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the rotation and pinning of antiferromagnetic moments in IrMn. At higher temperatures, the broadened loops show zero shift, which correlates with the observation of fully rotating antiferromagnetic moments inside the IrMn film. The onset of exchange bias at lower temperatures is linked to a partial rotation between distinct metastable states and pinning of the IrMn antiferromagnetic moments in these states. The observation complements common pictures of exchange bias and reveals an electrically measurable memory effect in an antiferromagnet.  相似文献   

9.
The magnetization behaviour of a Co/Cu/Co(001) sandwich has been studied by magneto-optical Kerr effect measurements. The sample was grown by molecular beam epitaxy onto a sapphire (1 .2) substrate with a Cu/Cr/Nb(001) buffer system. The copper layer had the form of a wedge with the thickness range chosen to be around the second region of antiferromagnetic exchange coupling. The hysteresis loops in the regime of weak antiferromagnetic coupling show characteristic steps, which can be explained by an anisotropy-induced non-collinear spin state. Indication for a similar behaviour is also found in the regime of strong antiferromagnetic coupling. This behaviour is explained by taking into account the competition between anisotropy, interlayer exchange coupling and external field energy. The nature of this metastable non-collinear magnetization state is in marked contrast to the biquadratic (90°) exchange coupling which was discovered in Fe/Cr(001).  相似文献   

10.
It is shown that antiferromagnetic ordering in doped manganites with strong double-exchange interaction is transformed into ferromagnetic canted ordering with residual antiferromagnetic behavior in the basal plane as a result of hopping of mobile electron. The canting angle between the core magnetiztions is controlled by the competition of the Heisenberg antiferromagnetic exchange and double exchange. The temperatures of the paramagnet-antiferromagnet and paramagnet-canted ferromagnetic phase transitions are calculated. The results on the dependence of the magnetization in the canted phase and critical temperatures on the doping degree are in qualitative agreement with experiment. The form of uniform oscillations of core magnetiztions in the canted ferromagnetic phase of a doped manganite sample with hopping conduction is analyzed with and without allowance for relaxation of mobile electrons to the lattice. We propose a mechanism for the ferromagnetic resonance broadening and its resonance frequency shift in a ferromagnetic conducting sample (hopping conduction) of doped manganite due to double exchange. The resonance frequency shift and the ferromagnetic resonance damping constant (linewidth) are calculated in this model. In contrast to other relaxation mechanisms, the model is based on the fact that mobile electrons rapidly relax to the lattice (over a time on the order of the precession period).  相似文献   

11.
In studying well-characterized, exchange-biased Fe(3)O(4)/CoO superlattices, we demonstrate a causal link between the exchange bias effect and the perpendicular coupling of the ferrimagnetic and antiferromagnetic spins. Neutron diffraction studies reveal that for thin CoO layers the onset temperature for exchange biasing T(B) matches the onset of locked-in, preferential perpendicular coupling of the spins, rather than the antiferromagnetic ordering temperature T(N). The results are explained by considering the role of anisotropic exchange first proposed by Dzyaloshinsky and Moriya and developing a model based purely on information on structural defects and exchange for these oxides. The devised mechanism provides a general explanation of biasing in systems with perpendicular coupling.  相似文献   

12.
A general model of a hybrid interfacial domain wall(HIDW) in ferromagnetic/antiferromagnetic exchange biased bilayers is proposed, where an interfacial domain wall is allowed to extend into either the ferromagnetic or antiferromagnetic layer or across both. The proposition is based on our theoretical investigation on thickness and field dependences of ferromagnetic domain wall(FMDW) and antiferromagnetic domain wall(AFDW), respectively. Good match of the simulation to the hysteresis loops of a series of Ni Fe/Fe Mn exchange-biased bilayers confirms the existence of the HIDW, where the AFDW part is found to preferentially occupy the entire antiferromagnetic layer while the FMDW shrinks with the increased magnetic field as expected. The observed asymmetry between the ascending and descending branches of the hysteresis loop is explained naturally as a consequence of different partition ratios between AFDW and FMDW.  相似文献   

13.
刘萍  秦真真  乐云亮  左旭 《中国物理 B》2017,26(2):27103-027103
Using the first-principles calculations, we study the structural, electronic, and magnetic properties of vanadium adsorbed MoSe_2 monolayer, and the magnetic couplings between the V adatoms at different adsorption concentrations. The calculations show that the V atom is chemically adsorbed on the MoSe_2 monolayer and prefers the location on the top of an Mo atom surrounded by three nearest-neighbor Se atoms. The interatomic electron transfer from the V to the nearestneighbor Se results in the polarized covalent bond with weak covalency, associated with the hybridizations of V with Se and Mo. The V adatom induces local impurity states in the middle of the band gap of pristine MoSe_2, and the peak of density of states right below the Fermi energy is associated with the V- dz~2 orbital. A single V adatom induces a magnetic moment of 5 μBthat mainly distributes on the V-3d and Mo-4d orbitals. The V adatom is in high-spin state, and its local magnetic moment is associated with the mid-gap impurity states that are mainly from the V-3d orbitals. In addition,the crystal field squashes a part of the V-4s electrons into the V-3d orbitals, which enhances the local magnetic moment.The magnetic ground states at different adsorption concentrations are calculated by generalized gradient approximations(GGA) and GGA+U with enhanced electron localization. In addition, the exchange integrals between the nearest-neighbor V adatoms at different adsorption concentrations are calculated by fitting the first-principle total energies of ferromagnetic(FM) and antiferromagnetic(AFM) states to the Heisenberg model. The calculations with GGA show that there is a transition from ferromagnetic to antiferromagnetic ground state with increasing the distance between the V adatoms. We propose an exchange mechanism based on the on-site exchange on Mo and the hybridization between Mo and V, to explain the strong ferromagnetic coupling at a short distance between the V adatoms. However, the ferromagnetic exchange mechanism is sensitive to both the increased inter-adatom distance at low concentration and the enhanced electron localization by GGA+U, which leads to antiferromagnetic ground state, where the antiferromagnetic superexchange is dominant.  相似文献   

14.
Measurements of coherent electron spin dynamics in Ga1-xMnxAs/Al0.4Ga0.6As quantum wells with 0.0006%相似文献   

15.
In this paper we provide a review and overview of a series of works generated in our laboratory over the last 5 years. These works have described the development and evolution of a new paradigm for exchange bias in polycrystalline thin films with grain sizes in the range 5-15 nm. We have shown that the individual grains in the antiferromagnetic (AF) layer of exchange bias systems contain a single AF domain and reverse over an energy barrier which is grain volume dependent. We show that the AF grains are not coupled to each other and behave independently. Understanding this process and using designed measurement protocols has enabled us to determine unambiguously the blocking temperature distribution of the AF grains, the anisotropy constant (KAF) of the AF, understand the AF grain-setting process, and predict its magnetic viscosity. We can explain and predict the grain size and film thickness dependence of the exchange field Hex. We have also studied interfacial effects and shown that there are processes at the interface, which can occur independently of the bulk of the AF grains. We have seen these effects via studies of trilayers and also via the field dependence of the setting process which does not affect the blocking. From separate experiments we have shown that the disordered interfacial spins exist as spin clusters analogous to a spin glass. These clusters can order spontaneously at low temperatures or can be ordered by the setting field. We believe it is the degree of order of the interfacial spins that gives rise to the coercivity in exchange bias systems. Based on this new understanding of the behaviour of the bulk of the grains in the antiferromagnet and the interfacial spins we believe that we have now a new paradigm for the phenomenon of exchange bias in sputtered polycrystalline thin films. We emphasize that the phenomenological model does not apply to core-shell particles, epitaxial single-crystal films and large grain polycrystalline films.  相似文献   

16.
A two-sublattice model is presented and applied to the fee antiferromagnetic lattice of the second kind. It includes a Heisenberg hamiltonian for exchange interactions between first and second neighbor spins. Surface spin interactions are kept identical to bulk ones. Surface and bulk magnons are obtained and show some cases of instabilities (soft modes) which may account for surface superstructures. The model is applied to the case of EuTe.  相似文献   

17.
The mean field critical temperature for the spin-Peierls phase transition in the XY antiferromagnetic chain is obtained for nearest and next nearest neighbour exchange interaction. An increase in Tc is predicted for next nearest neighbour antiferromagnetic exchange and a decrease is obtained for ferromagnetic exchange. This model is applied to the alkali-TCNQ salts, which are treated in the framework of the highly correlated Hubbard model.  相似文献   

18.
Stoichiometric and Cu-poor Cu(0.95-x)Mn(0.05)InSe(2) (x = 0-0.20) compounds were synthesized by high-temperature, solid-state reactions. The presence of copper vacancies is revealed by Rietveld refinements of combined neutron and x-ray powder diffraction data. The antiferromagnetic interaction is depressed by the copper deficiency, which may be explained as the competition between the antiferromagnetic Mn-Se-Mn superexchange interaction and the hole-mediated ferromagnetic exchange induced by the copper vacancy. The introduction of copper vacancies is proposed to be a viable route to impart carrier-mediated ferromagnetic exchange in the chalcopyrite-based dilute magnetic semiconductors.  相似文献   

19.
A model providing a semi-quantitative account of the magnetic behavior of Co nanoparticles embedded in a CoO matrix is presented. The results confirm that exchange coupling at the interface between ferromagnetic (FM) and antiferromagnetic (AFM) nanostructures could provide an extra source of magnetic anisotropy, leading to thermal stability of the FM nanoparticles. It is shown that perpendicular coupling between the AFM and FM moments may result in large coercivities. The energy barrier, which works against reversal is due to the AFM susceptibility anisotropy. The experimentally observed exchange bias is tentatively ascribed to pre-existing intrinsic canting of the AFM moments at the interface.  相似文献   

20.
From all-electron fixed-spin-moment calculations we show that ferromagnetic and checkerboard antiferromagnetic ordering in LaFeAsO are not stable and the stripe antiferromagnetic configuration with M(Fe)=0.48 microB is the only stable ground state. The main exchange interactions between Fe ions are large, antiferromagnetic, and frustrated. The magnetic stripe phase breaks the tetragonal symmetry, removes the frustration, and causes a structural distortion. These results successfully explain the magnetic and structural phase transitions in LaFeAsO recently observed by neutron scattering. The presence of competing strong antiferromagnetic exchange interactions suggests that magnetism and superconductivity in doped LaFeAsO may be strongly coupled, much like in the high-T(c) cuprates.  相似文献   

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