Bonding structure and mechanical properties of carbon nitride bilayer films with Ti and TiN interlayer

Carbon nitride (CN_x) bilayer films with Ti and TiN interlayer were synthesized by cathode arc technique at various nitrogen pressures (P_N2). The dependences of microstructure and bonding composition of the films on the P_N2 and interlayer were analyzed by Raman spectroscopy and X‐ray photoelectron spectroscopy. Microstructure evolution consisting of the ordering and size of Csp² clusters, the faction of N–sp³/N–sp² bonds and graphite‐like/pyridine‐like configurations was dominated by P_N2, interlayer and annealing. The results showed that Ti and TiN interlayer decrease the atomic ratio of N/C and increase clustering Csp². High P_N2 induces the formation of C ≡ N and C ? N bonds, the increase of sp²‐bonding content and the growth of Csp² clusters. A large part of nitrogen atoms are coordinated with sp²‐hybridized carbon (minimum 71% for annealed CN_x monolayer). TiN/CN_x bilayer had a higher content of pyridine‐like configuration. Morphological characteristics of CN_x monolayer and bilayer mainly depend on the surface character (roughness and surface energy) of the sublayer. The internal stress in the as‐deposited Ti/CN_x bilayer is smaller, but it after annealing is higher than that of CN_x monolayer and TiN/CN_x bilayer. These results may be of interest for studying the CN_x films with controlled bonding composition and expected engineering properties. Copyright © 2014 John Wiley & Sons, Ltd.     

Synthesis and characterization of Ti and N binary‐doped ɑ‐C films deposited by pulse cathode arc with ionic source assistant

Using ionic source assistant, Ti and N co‐doped amorphous C (α‐C:N:Ti) thin films were prepared by pulse cathode arc technique. Microstructure, composition, elemental distribution, morphology, and mechanical properties of α‐C:N:Ti films were investigated in dependence of nitrogen source, pulse frequency, and target current by Raman spectroscopy, X‐ray diffraction, scanning electron microscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, nanoindentation, and surface profilometer. The results show the presence of titanium carbide and nitride in a‐C:N:Ti films. The α‐C:N⁺:Ti film (6 Hz, 60 A) shows the smaller size and the higher disordering degree of Csp² clusters. The α‐C:N⁺:Ti films present smoother surface and smaller particle size than for α‐C:N₂:Ti films. N ions facilitate the formation of N‐sp³C bonds in the α‐C:N⁺:Ti films, and α‐C:N⁺:Ti (10 Hz, 80 A) film possesses the more graphite‐like N bonds. Higher hardness and lower residual stress present in the α‐C:N₂:Ti (10 Hz, 80 A) film.     

The structure and tribological properties of aluminum/carbon nanocomposite thin films synthesized by reactive magnetron sputtering

Hydrogenated nanocomposite aluminum/carbon thin films (Al/a‐C:H) were fabricated on stainless steel and silicon wafer substrates via unbalanced reactive magnetron sputtering from an Al target in CH₄/Ar plasma. The composition and structure of Al/a‐C:H films were investigated by high‐resolution transmission electron microscope (HRTEM), XPS and micro‐Raman spectroscopy. Nanoindenter, interferometer and ball‐on‐disc tribometer were carried out to evaluate the hardness, internal stress and tribological properties of Al/a‐C:H films. HRTEM observations confirmed that the metallic Al nanocrystallites were uniformly dispersed in the amorphous carbon matrix. XPS and Raman analyses indicated that the sp² content increased with the increase of Al content in the films. Nanoindenter and interferometer tests exhibited that the uniform incorporation of Al nanocrystallites can diminish drastically the magnitude of internal stress with maintaining the higher hardness of as‐deposited films. Especially, the ball‐on‐disc tribometer measurements revealed that the nanocomposite film with 2.3 at.% Al content exhibited relatively better wear resistance and self‐lubrication performance with a friction coefficient of 0.06 and wear rate of 3.1 × 10^?16 m³/ N·m under ambient air, which can be attributed to the relatively higher hardness, the formation of continuous graphitized transfer film on counterface and the reduced reaction of oxygen with carbon. Copyright © 2010 John Wiley & Sons, Ltd.     

Bioactivity and mechanical properties of nickel‐incorporated hydrogenated carbon nanocomposite thin films

In this paper, the influence of nickel incorporation on the mechanical properties and the in vitro bioactivity of hydrogenated carbon thin films were investigated in detail. Amorphous hydrogenated carbon (a‐C:H) and nickel‐incorporated hydrogenated carbon (Ni/a‐C:H) thin films were deposited onto the Si substrates by using reactive biased target ion beam deposition technique. The films' chemical composition, surface roughness, microstructure and mechanical properties were investigated by using XPS, AFM, TEM, nanoindentation and nanoscratch test, respectively. XPS results have shown that the film surface is mainly composed of nickel, nickel oxide and nickel hydroxide, whereas at the core is nickel carbide (Ni₃C) only. The presence of Ni₃C has increased the sp² carbon content and as a result, the mechanical hardness of the film was decreased. However, Ni/a‐C:H films shows very low friction coefficient with higher scratch‐resistance behavior than that of pure a‐C:H film. In addition, in vitro bioactivity study has confirmed that it is possible to grow dense bone‐like apatite layer on Ni/a‐C:H films. Thus, the results have indicated the suitability of the films for bone‐related implant coating applications. Copyright © 2011 John Wiley & Sons, Ltd.     

Influence of deposition pressure on hydrogenated amorphous carbon films prepared by d.c.‐pulse plasma chemical vapor deposition

Hydrogenated amorphous carbon films (a‐C : H) were prepared by d.c.‐pulse plasma chemical vapor deposition using CH₄ and H₂ gases. The microstructure and hardness of the resulting films were investigated at different deposition pressures (6, 8, 11, 15, and 20 Pa). The growth rate increased sharply from 3.2 to 10.3 nm/min with increasing the pressure from 6 to 20 Pa. According to Raman spectra, XPS, and Fourier transform infrared analysis, the films deposited at the pressure of 6 and 8 Pa have high sp³ content and show typical diamond‐like character. However, the microstructures and bond configuration of the films deposited at 11, 15, and 20 Pa have high sp² content and favored fullerene‐like nanostructure. The hardness and sp² content were shown to reach their minimum values simultaneously at a deposition pressure of 8 Pa and then increased continuously. The film with fullerene‐like nanostructure obtained at 20 Pa displays a high Raman I_D/I_G ratio (~1.6), and low XPS C 1s binding energy (284.4 eV). The microstructural analysis indicates that the films are composed of a hard and locally dense fullerene‐like network, i.e. a predominantly sp²‐bonded material. The rigidity of the films is basically provided by a matrix of dispersed cross‐linked sp² sites. Copyright © 2012 John Wiley & Sons, Ltd.     

Non‐hydrogenated amorphous germanium carbide with adjustable microstructure and properties: a potential anti‐reflection and protective coating for infrared windows

Amorphous non‐hydrogenated germanium carbide (a‐Ge_1?xC_x) films have been deposited using magnetron co‐sputtering technique by varying the sputtering power of germanium target (P_Ge). The effects of P_Ge on composition and structure of the a‐Ge_1?xC_x films have been analyzed. The FTIR spectrum shows that the C–Ge bonds were formed in the a‐Ge_1?xC_x films according to the absorption peak at ~610 cm^?1. The Raman results indicate that the amorphous films also contain both Ge and C clusters. The XPS results reveal that the carbon concentration decreased as P_Ge increased from 40 to 160 W. The fraction of sp³ C–C bonds remains almost constant when increasing P_Ge from 40 to 160 W. The sp² C–C content of a‐Ge_1?xC_x film decreases gradually to 35.9% with P_Ge up to 160 W. Nevertheless, sp³ C–Ge sites rose with increasing P_Ge. Furthermore, the hardness and the refractive index gradually increased with increasing P_Ge. The excellent optical transmission of annealed a‐Ge_1–xC_x double‐layer coating at 400 °C suggests that a‐Ge_1?xC_x films can be used as an effective anti‐reflection coating for the ZnS IR window in the wavelength region of 8–12 µm, and can endure higher temperature than hydrogenated amorphous germanium carbide do. Copyright © 2012 John Wiley & Sons, Ltd.     

不同氮掺杂量碳纳米管的合成和表征

以不同氮含量的有机胺为碳和氮源，用催化方法合成出了不同氮含量的大管径碳纳米管。采用Fe/SBA-15分子筛为催化剂，有机胺经过1 073 K高温裂解得到氮掺杂碳纳米管材料(CN_x)。比较了苯、三乙胺、二乙胺、乙二胺四种原料对合成CN_x形貌、产率、掺氮量和吸水率的影响；以二乙胺为原料合成出适中的氮碳比(N/C原子比为0.15)和较高产率(2.2 g·（g·cat）^-1)的竹节状CN_x材料。     

Synthesis and properties of polyenic oligosulfides derived from acetylene and elemental sulfur

Oligosulfides derived from ethyne-1,2-dithiol were synthesized in up to 96% yield via insertion of elemental sulfur into the Na-C_sp bond of sodium acetylides (HC≡CNa, NaC≡CSNa) in liquid ammonia, followed by hydrolysis and spontaneous oligomerization of ethynethiols, ethynedithiols, and mono-and bis-(polysulfanyl)ethynes (HC≡CSH, HSC≡CSH, HC≡CS_xH, HS_xC≡CS_yH). The resulting polyenic oligosulfides were isolated as brown powders melting in the temperature range from 122 to 203°C and containing up to 77% of sulfur; they are sparingly soluble in organic solvents and are high-resistance semiconductors (10^?13–10^?14 S cm^?1) possessing paramagnetic (10¹⁷–10¹⁸ spin g^?1) and redox properties. According to the data of IR and ESR spectroscopy and cyclic voltammetry, the oligomers obtained consist mainly of different oligosulfide units, including oligothienothiophene structures. They also ensure a high discharge capacity (345–720 mA h g^?1) of lithium sulfur rechargeable batteries.     

Lower friction and higher wear resistance of fluorine‐incorporated amorphous carbon films

Plasma‐enhanced chemical vapor deposition was employed to fabricate hydrogenated amorphous carbon (a‐C:H) films and fluorine‐doped hydrogenated amorphous (a‐C:H:F) carbon films. For comparison purpose, the a‐C:H films were treated with CF₄ plasma. The bonding structure and tribological behavior of the films were investigated. The results indicate that the F presented mainly in the forms of C–F₃, C–F and C–F₂ groups in both the a‐C:H:F film and the surface CF₄ plasma processed hydrogenated amorphous carbon (F‐P‐a‐C:H) films. Moreover, the a‐C:H:F films, because of the transformation of sp³ to sp², possess a lower friction coefficient than that of the F‐P‐a‐C:H films. Copyright © 2013 John Wiley & Sons, Ltd.     

等离子体增强磁控溅射沉积碳化硅薄膜的化学结构与成膜机理

以CH4和Ar为工作气体,单晶硅为溅射靶,通过微波电子回旋共振(MW-ECR)等离子体增强非平衡磁控溅射方法在不同的CH4流量和沉积温度下制备了a-Si1-xCx∶H薄膜.利用傅里叶变换红外(FT-IR)光谱,X光电子能谱(XPS)和纳米硬度仪等表征方法研究不同沉积参数下薄膜的化学结构、化学配比和硬度的变化.结果表明:室温(25℃)下随CH4流量由5cm·3min-1增加到45cm3·min-1(标准状态)时,薄膜中Si—CH2键,C—H键含量逐渐增加,Si—H键变化不明显;膜中C原子百分比由28%增至76%,Si原子百分比由62%降至19%.当CH4流量为15cm3·min-1时,随沉积温度的升高,薄膜中Si和C原子百分比含量分别为52%和43%,且基本保持不变;膜中Si—H键和C—H键转化为Si—C键,薄膜的显微硬度显著提高,在沉积温度为600℃时达到29.7GPa.根据分析结果,提出了室温和高温下a-Si1-xCx:H薄膜生长模型.     

Vacancy‐Rich Ni(OH)2 Drives the Electrooxidation of Amino C−N Bonds to Nitrile C≡N Bonds

Electrochemical synthesis based on electrons as reagents provides a broad prospect for commodity chemical manufacturing. A direct one‐step route for the electrooxidation of amino C?N bonds to nitrile C≡N bonds offers an alternative pathway for nitrile production. However, this route has not been fully explored with respect to either the chemical bond reforming process or the performance optimization. Proposed here is a model of vacancy‐rich Ni(OH)₂ atomic layers for studying the performance relationship with respect to structure. Theoretical calculations show the vacancy‐induced local electropositive sites chemisorb the N atom with a lone pair of electrons and then attack the corresponding N(sp³)?H, thus accelerating amino C?N bond activation for dehydrogenation directly into the C≡N bond. Vacancy‐rich nanosheets exhibit up to 96.5 % propionitrile selectivity at a moderate potential of 1.38 V. These findings can lead to a new pathway for facilitating catalytic reactions in the chemicals industry.     

Effects of Ar/H/N‐ion bombardment on the surface free energy and friction behavior of the fullerene‐like hydrogenated carbon (FL‐C:H) film

The surface modification of the fullerene‐like hydrogenated carbon (FL‐C:H) film was achieved by bombardment using Ar, H, and N ions, respectively. A systematic comparison of X‐ray photoelectron spectroscopy (XPS) and Fourier transformation infrared(FTIR) spectra was made between the FL‐C:H film and ion‐bombarded films. The results show that ion bombardment resulted in the increase of sp³ C content, specially, new C? N bonds were formed for N‐ion‐bombarded film. The contact angle (CA) and friction coefficient of those films were measured. The surface free energy evaluated from the contact angle increased for ion‐bombarded films, and the most obvious increase was obtained for N‐ion‐bombarded film. The friction coefficient decreased for H‐ion‐bombarded film whereas it increased for N‐ion‐bombarded film, and the friction coefficient of Ar‐ion‐bombarded film was close to that of the FL‐C:H film. Copyright © 2008 John Wiley & Sons, Ltd.     

Structural,chemical and nanomechanical investigations of SiC/polymeric a-C:H films deposited by reactive RF unbalanced magnetron sputtering

Amorphous carbon (or diamond-like carbon, DLC) films have shown a number of important properties usable for a wide range of applications for very thin coatings with low friction and good wear resistance. DLC films alloyed with (semi-)metals show some improved properties and can be deposited by various methods. Among those, the widely used magnetron sputtering of carbon targets is known to increase the number of defects in the films. Therefore, in this paper an alternative approach of depositing silicon-carbide-containing polymeric hydrogenated DLC films using unbalanced magnetron sputtering was investigated. The influence of the C₂H₂ precursor concentration in the deposition chamber on the chemical and structural properties of the deposited films was investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and elastic recoil detection analysis. Roughness, mechanical properties and scratch response of the films were evaluated with the help of atomic force microscopy and nanoindentation. The Raman spectra revealed a strong correlation of the film structure with the C₂H₂ concentration during deposition. A higher C₂H₂ flow rate results in an increase in SiC content and decrease in hydrogen content in the film. This in turn increases hardness and elastic modulus and decreases the ratio H/E and H³/E². The highest scratch resistance is exhibited by the film with the highest hardness, and the film having the highest overall sp³ bond content shows the highest elastic recovery during scratching.     

Intermolecular Amination of Unactivated C(sp3)−H Bonds with Cyclic Alkylamines: Formation of C(sp3)−N Bonds through Copper/Oxygen‐Mediated C(sp3)−H/N−H Activation

The first example of intermolecular amination of unactivated C(sp³)?H bonds by cyclic alkylamines mediated by Cu(OAc)₂/O₂ is reported. This method avoids the use of benzoyloxyamines as the aminating reagent, which are normally prepared from alkylamines in extra steps. A variety of unnatural β^{2, 2}‐amino acid analogues are synthesized by this simple and efficient procedure. This approach offers a solution to the previous unmet challenge of C(sp³)?H/N?H activation for the formation of C(sp³)?N bonds.     

Effects of plasma treatments on correlation between chemical structures of DLC films and liquid crystal alignment

In an effort to obtain an improved liquid crystal (LC) alignment layer for liquid crystal display device applications, amorphous diamond‐like carbon thin films were deposited on ITO‐coated glass substrates by an rf magnetron sputtering technique at room temperature and then treated with plasma in various atmospheres. The polarized images and pretilt angles of the LC cells showed that LC alignment was enhanced by post‐plasma treatments of the films. In Raman and X‐ray photoelectron spectroscopy spectra of the films, an increase in the fraction of sp²‐bonding was observed after post‐plasma treatments of the films. In particular, H₂ plasma‐treated film had the largest fraction of sp²‐bonding at the film surface and showed much improved alignment capabilities. These results suggest that π‐bondings of the sp²‐structure at the surface rather than the bulk play an important role in LC alignment.     

Structure evolution of hydrogenated carbon films from amorphous carbon to fullerene‐like nanostructure

A–C:H (hydrogenated amorphous carbon) films were deposited by pulsed direct‐current (d.c.) plasma enhanced chemical vapor deposition on silicon substrates. This study investigated the structural and mechanical evolution of the as‐deposited films with fullerene‐like nanostructure. The results showed that pulsed d.c. negative bias (?500 ~ ?1000 V) signally influenced the growth rate, hardness, surface roughness, sp³ content, and friction behavior of the films. As the pulsed d.c. negative bias voltage increased, the sp³ content, surface roughness, hydrogen content and the friction coefficient of the films decreased; however, the growth rate and the hardness increased. The films deposited at ?1000 V with fullerene‐like microstructure display a nanohardness of about 19.7 GPa and the smallest friction coefficient (~0.06). The evolution on mechanical and structural properties of the films are explained by the a–C:H growth mechanism based on the interaction on plasma‐surface interface and the subsurface reactions in the film. Copyright © 2014 John Wiley & Sons, Ltd.     

SnOx thin films with tunable conductivity for fabrication of p–n homo‐junction

Tin oxide (SnO_x) has been widely used for the fabrication of transparent and flexible devices because of its excellent optical and electronic properties. In this work, we established a methodology for the synthesis of SnO_x thin films with p‐type and n‐type tunable conductivity by direct currecnt (DC) magnetron sputtering. The SnO_x thin films changed from p‐type to n‐type by increasing the relative oxygen partial pressure (ppO₂) from 4.8% to 18.5% and by varying the working pressure between 1.8 and 2.5 mTorr. The SnO_x thin films were annealed at 160°C, 180°C, and 200°C for 30 min to promote the formation of the desired crystalline structures. At the annealing temperature of 180°C in air ambient, the SnO_x thin films showed a tetragonal structure with Sn traces. Having found the optimal conditions, we deposited both types of SnO_x thin films with the same tetragonal structure and similar chemical stoichiometry. Also, the conditions to obtain thin films with the highest mobility values for p‐type (1.10 cm²/Vs) and n‐type (22.20 cm²/Vs) were used for fabricating the device. Finally, the implementation of a SnO_x‐based p–n diode was demonstrated using transparent SnO_x thin films developed in this work, illustrating their potential use in transparent electronics.     

Synthesis of Two‐Electron Bimetallic Cu–Ag and Cu–Au Clusters by using [Cu13(S2CNnBu2)6(C≡CPh)4]+ as a Template

Atomically precise Cu‐rich bimetallic superatom clusters have been synthesized by adopting a galvanic exchange strategy. [Cu@Cu₁₂(S₂CNⁿBu₂)₆(C≡CPh)₄][CuCl₂] ( 1 ) was used as a template to generate compositionally uniform clusters [M@Cu₁₂(S₂CNⁿBu₂)₆ (C≡CPh)₄][CuCl₂], where M=Ag ( 2 ), Au ( 3 ). Structures of 1 , 2 and 3 were determined by single crystal X‐ray diffraction and the results were supported by ESI‐MS. The anatomies of clusters 1 – 3 are very similar, with a centred cuboctahedral cationic core that is surrounded by six di‐butyldithiocarbamate (dtc) and four phenylacetylide ligands. The doped Ag and Au atoms were found to preferentially occupy the centre of the 13‐atom cuboctahedral core. Experimental and theoretical analyses of the synthesized clusters revealed that both Ag and Au doping result in significant changes in cluster stability, optical characteristics and enhancement in luminescence properties.     

Effect of Power Density on the Electrochemical Properties of Undoped Amorphous Carbon (a‐C) Thin Films

Undoped a‐C thin films were deposited with varying power density from 10 to 25 W/cm² using unbalanced closed‐field magnetron sputtering (CFUBMS). The effect of power density on the physical and electrochemical properties was investigated by experimental characterization methods and atomistic simulations. XPS indicated that the films were composed mostly of sp²‐bonded carbon (55–58 at.%) with a small amount of oxygen (8–9 at.%) in the surface region. The films appeared completely amorphous in XRD. The I_D/I_G ratio obtained by Raman spectroscopy indicated an increase from 1.76 to 2.34 with power density. The experimental and simulated data suggested a possible ordering and/or clustering of the sp² phase with power density as the cause of the improved electrical properties of the a‐C films. The electrochemical properties of a‐C were between those of glassy carbon and tetrahedral amorphous carbon with potential windows ranging from 2.77 to 2.93 V and double‐layer capacitance values around 0.90 μF cm^?2. Electron transfer for Ru(NH₃)₆^3+/2+ and FcMeOH^+1/0 was reversible whereas that for IrCl₆^2?/3? was quasi‐reversible. Peak potential separation of dopamine and oxidation potential of ascorbic acid decreased with power density, correlating with the structural and electrical changes of the films. The a‐C thin films deposited by CFUBMS are inherently conductive and their physical properties can be adjusted by varying the deposition parameters to a wide range of electrochemical applications.     

Imines in the Titanium Coordination Sphere – Transformation of Imidoyl Chlorides to Nitrilium Ions

In the reaction of TiCl₄ in benzene as solvent with the imidoyl chloride p‐Tolyl(Cl)C=NPh ( 1 ) the abstraction of the chloride substituent is observed, leading to the nitrilium salt [p‐Tolyl–C≡N–Ph]⁺[Ti₂Cl₉]^– ( 2 ) in quantitative yield. The highly electrophilic salt 2 is characterized by IR‐ and NMR spectroscopy. The observed band for the C≡N stretching mode of 2 clearly indicates the formation of a nitrilium ion. Especially a characteristic line broadening of the ¹³C{¹H}‐NMR signals related to carbon atoms next to the nitrogen is observed. By ¹⁵N,¹H‐HMBC NMR experiments it is shown that the nitrogen signal of 2 is significantly shifted to high‐field in relation to nitriles and imines. The molecular structure of 2 was confirmed by single‐crystal X‐ray diffraction. The C≡N bond length and the linearity of the C–C≡N–C unit in 2 confirm the triple bond character of this bond.