沉积温度对等离子增强化学气相沉积法制备的SiNx:H薄膜特性的影响

利用Centrotherm公司生产的管式等离子增强化学气相沉积(PECVD)设备在p型抛光硅片表面沉积SiN_x:H薄膜, 研究沉积温度对SiN_x:H薄膜的组成及光学特性、结构及表面钝化特性的影响. 然后采用工业化的单晶硅太阳电池制作设备和工艺制作太阳电池, 研究不同温度制备的薄膜对电池电性能的影响. 测试结果表明: SiN_x:H薄膜的折射率随着沉积温度的升高而变大, 分布在1.926-2.231之间, 这表明Si/N摩尔比随着沉积温度的增加而增加; 当沉积温度增加时, 薄膜中Si－H键和N－H键浓度呈现减小趋势, 而Si－N键浓度逐渐升高, 薄膜致密度增加; 随着沉积温度的升高, SiN_x:H薄膜中的氢析出导致了钝化硅片的有效少子寿命先升高后降低, 并且有效少子寿命出现明显的时间衰减特性. 当沉积温度为450 °C时, 薄膜具有最优的减反射和表面钝化效果. 采用不同温度PECVD制备的5组电池的电性能测试结果也验证了这一结果.     

掺铒a-SixC1-x-H薄膜的发光特性

用等离子体增强化学气相沉积（PECVD）的方法，以固定的氢气（H2）流量和不同的硅烷（SiH4）和甲烷（CH4）流量比沉积了一系列的氢化非晶SiC（a-Si，C1-x-H）膜。用这种宽带隙的a-SixC1-x-H材料作为掺铒的基体材料，通过离子注入的方法得到掺铒的a-SixC1-x-H（a-SixC1-x-H：Er）膜。注入以后的样品经过不同温度的退火。用X射线光电子能谱（XPS）、红外吸收光谱（IR）、拉曼散射谱（Raman）等技术研究不同的SiH4／CH4流量比和退火温度对a-SixC1-x-H：Er发光强度的影响。结果表明，高温退火引起了膜中C的分凝，对饵的发光是不利的。通过低温和室温下铒发光强度的比较，表明这种材料具有较弱的温度猝灭效应。     

C(sp3)—H键直接催化硅基化反应研究进展

含C(sp3)—Si键的有机硅化合物在材料科学、药物化学和精细化学品合成等研究领域有着广泛的应用.通过C(sp3)—H的直接催化硅基化形成C(sp3)—Si键具有高的原子经济性和步骤经济性特点,近些年己成为含C(sp3)—Si键的新型有机硅分子合成领域的一个研究热点.详细总结了 C(sp3)—H键直接催化硅基化反应的研...     

卤代硅烷(R3SiX)与NR’3形成五配位硅化合物的加成反应

对R3SiX(R=H、CH3; X=F、Cl、Br、I)与NR’3 (R’=H、CH3)的加成物用量子化学密度泛函方法在B3LYP/6-31g(d,p)基组下(X原子采用cep-121g基组)进行了两种加成方式的研究. 一种是NR’3沿Si—X键轴向位置的加成, 另一种是NR’3沿Si—X键侧向接近的加成. 计算结果表明, 前者更稳定且更容易形成加成物; Si上斥电子基团不利于Si—N键的形成, 而N上斥电子基团则有利于Si—N键的形成; NH3-H3SiX系列和N(CH3)3-H3SiX系列均能以两种方式进行加成, NH3-H2(CH3)SiX系列仅能沿Si—X键轴向进行加成, 而NH3-H(CH3)2SiX和NH3-(CH3)3SiX 系列两种方式都不能进行加成; 在同系列加成产物中, 以X=Cl时所得加成物最稳定. 讨论了所有加成物中各键的性能、NBO电荷变化、取代基对加成物结构和稳定性的影响, 并对H3SiX(X=F、Cl、Br、I)与NH3及N(CH3)3加成物在有机溶剂中导电的可能性进行了讨论.     

CH_2=CClF→(hv) ·CH=CClF+H光解反应的理论研究

采用UHF,CIS和CASSCF方法,在aug-cc-pvdz基组水平上对CH2=CClF?h?v→?CH=CClF+H的光解反应通道及其后续反应作了研究.计算表明:分子吸收一个光子后,在第一电子激发态(S1)经过一个过渡态解离与Cl原子同侧的C—H键,这与用CIS方法计算垂直激发得到的π→σ*C-H跃迁及其对Frank-Condon点的计算中分子的单占轨道和键电荷密度变化所预测的结果是一致的.光解产物?CH=CClF(基态)还可再发生反应,经过渡态解离C—Cl键或是C—F键.     

甲烷在清洁 Pd(111) 及氧改性的 Pd(111) 表面解离的密度泛函理论研究

 采用广义梯度近似 (GGA) 的密度泛函理论 (DFT) 并结合平板模型, 研究了 CH4 在清洁 Pd(111) 及 O 改性的 Pd(111) 表面发生 C朒 键断裂的反应历程. 优化了裂解过程中反应物、过渡态和产物的几何构型, 获得了反应路径上各物种的吸附能及反应的活化能. 结果表明, CH4 采用一个 H 原子指向表面的构型在 Pd(111) 表面的顶位吸附, CH3 的最稳定的吸附位置为顶位, OH, O 和 H 的最稳定吸附位置均为面心立方. CH4 在清洁 Pd(111) 表面裂解的活化能为 0.97 eV, 低于它在 O 原子改性 (O 没有参与反应) 的 Pd(111) 表面的活化能 1.42 eV, 说明表面氧原子抑制了 CH4 中 C朒 键的断裂. 当亚表面 O 原子和表面 O 原子 (O 参与反应) 共同存在时, C朒 键断裂的活化能为 0.72 eV, 低于只有表层氧存在时的活化能 (1.43 eV), 说明亚表面的 O 原子对 CH4 分子的活化具有促进作用. CH4 在 O 原子改性的 Pd(111) 表面裂解生成 CH3 和 H, 以及生成 CH3 和 OH 的反应活化能分别为 1.42 和 1.43 eV, 说明 CH4 在 O 原子改性的 Pd(111) 表面发生这两种反应的难易程度相当.     

基于缺陷曲率对含有V_1～V_4空位(5,5)单壁碳纳米管[1+1]和[2+1]加成反应的第一性原理研究

本工作使用GGA-PBE方法研究了H和O在含有V_1~V_4空位(5,5)单壁碳纳米管[1+1](H/[1+1])和[2+1](O/[2+1])加成反应的结合能、几何和电子结构.基于方向曲率理论提出的缺陷曲率包括原子曲率(KM-def)和键曲率(K_(D-def))预测了空位缺陷区不同原子和键的加成反应活性.计算结果表明,不管是[1+1]还是[2+1]加成,V_1和V_3空位缺陷中含有悬空键的C原子化学活性最强,且在[2+1]加成反应中C与O原子形成了羰基;对空位缺陷区其它原子或键,H与(5,5)管V_1~V_4空位缺陷区的原子结合能随K_(M-def)的增大而增大;O加成在大K_(D-def)的C—C键时,C—C键易被打断,形成C—O—C产物结构,且相应的结合能较大;O加成在小K_(D-def)的C—C键时,C—C键未被打断,形成三元环产物结构.H/[1+1]和O/[2+1]加成反应结合能除了主要受曲率的影响,还受到参与反应的C原子在(5,5)管最高占据分子轨道的电荷密度以及分波态密度的影响.这些研究将为含有空位缺陷碳纳米管的表面修饰提供理论依据.     

反应温度对聚二甲基硅烷高压合成聚碳硅烷性能的影响

以聚二甲基硅烷(PDMS)为原料,在高压釜内高温高压合成了聚碳硅烷(PCS)先驱体.研究了反应温度对合成的PCS的Si—H键含量、支化度、Si—Si键含量、分子量及其分布、软化点及产率的影响.研究表明,随着反应温度的提高,分子量及软化点均明显增加,分子量分布变宽,支化度升高,Si—Si键含量明显降低.当反应温度低于460℃时,Si—H键含量及产率随反应温度的升高逐渐升高,当反应温度高于460℃时,由于分子间的缩合及热交联二者逐渐降低.在反应过程中PDMS首先转化为小分子量的PCS,然后是小分子PCS分子间发生脱氢及少量脱甲烷缩合使分子量长大.当反应温度高于450℃时,PCS分子量分布出现中分子量峰,Si—Si键含量较低,在室温空气中比较稳定.     

中性团簇(CeO_2)_m(m=1～3)活化甲烷C—H的密度泛函理论计算

采用密度泛函理论(DFT)计算了CH4在电中性(Ce O2)m(m=1~3)团簇上的活化情况,并对其机理进行了探讨.计算结果表明,甲烷C—H键在团簇上的活化为亲核加成模式,电子由团簇流向甲烷C—H反键轨道,使甲烷C—H键削弱而得以活化,反应的过渡态为四中心结构.团簇的桥氧位活化甲烷C—H键的活性大于端氧位,而三重桥氧位的活性高于二重桥氧位.团簇中作用位点Ce和O原子的电荷布居与其活化甲烷C—H的能力密切相关.溶剂的存在不仅降低了甲烷C—H活化自由能垒,而且使与甲烷作用的团簇各位点的活性差异缩小.     

Pt/TiO2光催化甲烷重整水气制氢

在室温下以太阳能替代传统的高温高压热反应条件,在固定床装置中实现连续动态光催化甲烷重整水气(PSRM)制氢反应:CH4+2H2O(g)→4H2+CO2. 产物的主成分是H2和CO2,同时检测到微量或痕量的C2H6、C2H4和CO. 重点考察了以光沉积法负载Pt的TiO2(p-Pt/TiO2)为光催化剂,该反应体系在不同CH4/H2O进料摩尔比、进料的总流速、光照波长、催化剂用量以及贵金属的负载方式等的实验条件对氢气产率的影响. 最优化的反应条件为:CH4/H2O进料摩尔比为4; 进料总流速为0.5 mL.min-1; 光沉积负载要优于浸渍法; 相同的负载方式Pd和NiOx为比较优异的助催化剂; 最佳催化剂用量为20 mg.cm-2. 最后循环实验结果表明,p-Pt/TiO2及反应体系都具有比较高的稳定性.     

Structural,compositional and hardness properties of hydrogenated amorphous carbon nitride thin films synthesized by dense plasma focus device

The hydrogenated amorphous carbon nitride (a‐CN_x:H) thin films were synthesized on the SS‐304 substrates using a dense plasma focus device. The a‐CN_x:H thin films were synthesized using CH₄/N₂ admixture gas and 20 focus deposition shots on substrates placed at different distances from the anode top. X‐ray photoelectron spectroscopy and Raman analysis confirmed different C–N bonding in the a‐CN_x:H thin films. A decrease in the N/C ratio as well as the sp³/sp² ratio with an increase in the substrate distance has been observed. The higher amount of C–N formation for the film synthesized at 10 cm is observed which decreases with increasing distance. The X‐ray photoelectron spectroscopy and Raman analysis affirmed the C ≡ N presence in all the thin films synthesized at different distances. The morphology of the synthesized a‐CN_x:H thin films showed nanoparticles and nanoparticle clusters formation at the surface. The hardness results showed comparatively lower hardness of the a‐CN_x:H thin films due to the presence of C ≡ N. The C–N formation with lower amount of C ≡ N and a higher N/C ratio as well as a higher sp³/sp² ratio for the films synthesized at 10 cm show reasonably higher hardness. Copyright © 2016 John Wiley & Sons, Ltd.     

The chemical composition and bonding structure of B–C–N–H thin films deposited by reactive magnetron sputtering

The chemical composition and bonding structures of B–C–N–H films fabricated by medium frequency magnetron sputtering, with N₂+CH₄+Ar gas mixture sputtering the boron target, were investigated. XPS and FTIR spectrometric analyses show that the increase of CH₄ flow rate during deposition causes an increase of the C content in the films. The increase in the CH₄ flow rate promotes an increase in the B–C, C–N single and C?N double bonds which are the components of the hybridized B–C–N bonding structure. From the results of Raman spectroscopy analysis, it is seen that the intensity of the D band of the films' Raman spectrum decreases with increasing CH₄ flow rate, indicating a decrease of the sp²‐phase content or the sp² C cluster size. The decreases of I_D/I_G also reflect the formation of more boron‐ or nitrogen‐ bound sp³‐coordinated carbons in the films. Copyright © 2009 John Wiley & Sons, Ltd.     

Synthesis,Characterization, Thermal Property of Si(c‐C5H9NH)4 and Its Potential as CVD Precursor for SiC Film

Silicon(IV) amide Si(c‐C₅H₉NH)₄ ( 1 ), was synthesized and characterized by ¹H, ¹³C, and ²⁹Si NMR spectroscopy, EI‐MS, elemental analysis, and X‐ray diffraction. Its thermal stability and volatility were also investigated. The as‐grown film, which was characterized by SEM, AFM, XRD and XPS, was deposited using 1 as single precursor through a low‐pressure chemical vapor deposition (LPCVD) process at a temperature as low as 600 °C. The results demonstrated that silicon(IV) amides can be promising single‐precursor for deposition of low‐temperature SiC films.     

Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films

Amorphous hydrogenated carbon-rich silicon–carbon alloy film (a-Si_0.3C_0.7:H) was deposited by reactive dc-magnetron sputtering of silicon target in argon–methane gas mixture. As-deposited film exhibits white photoluminescence at room temperature. After the deposition the samples were thermally annealed in dry Ar, wet Ar, or dry O₂ flow at 450 °C for 30 minutes that resulted in the enhancement of the photoluminescence intensity by a factor of about 5, 8 and 12 respectively. Spectral distribution of light emission was almost unchanged at the annealing in dry and wet argon while the oxidation in pure oxygen resulted in strong enhancement of a “blue” shoulder in the spectrum. EPR measurements at room temperature showed the decrease of spin concentration after thermal treatment in dry and wet argon and no EPR signal was detected after annealing in oxygen. FTIR and XPS measurements evidenced the formation of a-Si:O:C:H composite material after dry oxidation. Based on the measurements of photoluminescence in the temperature range 7–300 K it is suggested that light-emitting efficiency of a-Si_0.3C_0.7:H is determined by migration of the photo-excited carriers to non-radiative recombination centers. The physical mechanisms that can be involved in the strong enhancement of visible photoluminescence in Si:C:O:H layers are discussed.     

Influence of deposition pressure on hydrogenated amorphous carbon films prepared by d.c.‐pulse plasma chemical vapor deposition

Hydrogenated amorphous carbon films (a‐C : H) were prepared by d.c.‐pulse plasma chemical vapor deposition using CH₄ and H₂ gases. The microstructure and hardness of the resulting films were investigated at different deposition pressures (6, 8, 11, 15, and 20 Pa). The growth rate increased sharply from 3.2 to 10.3 nm/min with increasing the pressure from 6 to 20 Pa. According to Raman spectra, XPS, and Fourier transform infrared analysis, the films deposited at the pressure of 6 and 8 Pa have high sp³ content and show typical diamond‐like character. However, the microstructures and bond configuration of the films deposited at 11, 15, and 20 Pa have high sp² content and favored fullerene‐like nanostructure. The hardness and sp² content were shown to reach their minimum values simultaneously at a deposition pressure of 8 Pa and then increased continuously. The film with fullerene‐like nanostructure obtained at 20 Pa displays a high Raman I_D/I_G ratio (~1.6), and low XPS C 1s binding energy (284.4 eV). The microstructural analysis indicates that the films are composed of a hard and locally dense fullerene‐like network, i.e. a predominantly sp²‐bonded material. The rigidity of the films is basically provided by a matrix of dispersed cross‐linked sp² sites. Copyright © 2012 John Wiley & Sons, Ltd.     

Synthesis and properties of Q‐silicon crosslinked siloxane networks: H3PO4‐catalyzed sol–gel dehydration/crosslinking of α,ω‐bis(hydroxy)oligodimethylsiloxanes with tetrakis(hydroxydimethylsiloxy)silane

Six silicate‐crosslinked oligodimethylsiloxane thin films were prepared by the phosphoric acid (1 mol %) catalyzed condensation of α,ω‐bis(hydroxy)oligodimethylsiloxane (P) and tetrakis(hydroxydimethylsiloxy)silane (Q). Other acid catalysts were evaluated. P and Q were prepared by the Pd‐catalyzed oxidation of the corresponding Si? H compounds with water. The starting materials were characterized by IR and ¹H, ¹³C, and ²⁹Si NMR. A thermal cure was achieved with H₃PO₄ in 24 h and with poly(phosphoric acid) in 3 h at 110–120 °C. Dynamic mechanical analysis was used to determine the glass‐transition temperatures and to evaluate the mechanical properties of the films. Their thermal stabilities (≥300 °C) in air and N₂ were determined by thermogravimetric analysis. Small amounts of non‐crosslinked P were recovered from the films by Soxhlet extractions with CH₂Cl₂ and analyzed by IR, gel permeation chromatography, and ²⁹Si NMR. The crosslink densities were evaluated by the CH₂Cl₂ absorption capacities of the films. The surface properties of the films were determined by static and dynamic contact‐angle measurements. Electrochemical impedance spectroscopy was carried out to evaluate the corrosion‐protective properties of the coatings on mild steel as a function of the exposure time to 0.5 N NaCl. The biofoul‐release properties of the films were evaluated with sporelings from mature Ulva linza plants and barnacles. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2237–2247, 2006     

Small-angle X-ray scattering from nano-Si embedded a-SiC:H deposited by hot-wire chemical vapor deposition

Nanocrystalline silicon (nc-Si) embedded a-SiC:H films were deposited by hot-wire chemical vapor deposition (HWCVD) using SiH₄, CH₄ and H₂ gas precursors. The films were characterized by small-angle X-ray scattering, X-ray diffraction (XRD) and Raman spectroscopy to analyze their structural and fractal nature. The analysis of a-SiC:H films indicated the scattering from mass fractal aggregates of amorphous and nanocrystalline domains of nano-Si. The XRD results indicated that the size and crystallite fraction of nanocrystallites decreased with increasing CH₄ flow rate. Nc-Si changed from the mass fractal to the surface fractal with increasing CH₄ flow rate. The inter-diffusion correlation length between nc-Si embedded a-SiC:H varies from 2.4 nm to 5.7 nm with a CH₄ flow rate.     

The hydrogenation of methyl on metallic surfaces

The stream technique was used to comparatively analyze the characteristics of the deposition of a-C:H films from methyl radicals transferred by a carrier gas CH₄/C₂H _y /H₂ (y = 2, 4, 6) in a quartz tube with cylindrical insets made of Cu, Ni, Fe, W, Si, and stainless steel (SS), initial and coated with thin Pd or Rh films, over the temperature range 300–1000 K. The deposition of methyl was fully suppressed in a tube section heated to 380–800 K with all the insets specified. During further mixture movement outside this section in the tube with a decreasing wall temperature, carbon deposition resumed. The most effective catalyst of the hydrogenation reaction was stainless steel. Radicals and unsaturated hydrocarbons capable of polymerization at 300–400 K were fully removed from the carrier gas flow (CH₄/C₂H _y /H₂) after several hundreds of collisions with the surface of SS heated to 420–470 K. The possibility of creating an SS recombination filter for hydrocarbon radicals (the performance of radical hydrogenation reactions) transferred by a CH₄/C₂H _y /H₂ laminar flow was demonstrated. The deposition of a thin Pd film (∼10 nm) on steel did not increase the effectiveness of the surface with respect to radical recombination reactions. At the same time, Rh films increased the catalytic effectiveness of the surface of SS with respect to the hydrogenation of methyl and unsaturated hydrocarbons (380–420 K). The data obtained were used to select temperature conditions and mutual arrangement for the construction elements of an ITER diverter made of tungsten and stainless steel.     

Volatile Heteroligand Complexes of Copper(II): New Precursors for Chemical Vapor Deposition of Copper Films

Two heteroligand ketoiminate–diketonate complexes of copper(II), CuL(hfa) (1), L = pentane-2-imino-4-onato, CH₃COCHCNHCH ₃ ^– , and CuL′(hfa) (2), L′ = 2,2,6,6-tetramethyl-3-iminoheptane-5-onato, C(CH₃)₃COCHCNHC(CH)^–, were studied as precursors for chemical vapor deposition of copper films. The flow method was employed to measure the temperature dependences of a saturated vapor pressure of these compounds, the thermodynamic parameters of evaporation–sublimation were calculated, and the volatilities of these compounds and thermal behaviors in the condensed and gaseous phases were compared. The copper films were compared, and it was shown that comparatively high growth rates are reached when (2) is used to obtain copper films in hydrogen.     

1‐Silacyclopent‐2‐enes and 1‐silacyclohex‐2‐enes bearing functionally substituted silyl groups in 2‐positions. Novel electron‐deficient Si?H?B bridges

The reactions of alkyn‐1‐yl(vinyl)silanes R₂Si[C?C‐Si(H)Me₂]CH?CH₂ [R = Me (1a), Ph (1b)], Me₂Si[C?C‐Si(Br)Me₂]CH?CH₂ (2a), and of alkyn‐1‐yl(allyl)silanes R₂Si[C?C‐Si(H)Me₂]CH₂CH?CH₂ (R = Me (3a), R = Ph (3b)] with 9‐borabicyclo[3.3.1]nonane in a 1:1 ratio afford in high yield the 1‐silacyclopent‐2‐ene derivatives 4a, b and 5a, and the 1‐silacyclohex‐2‐ene derivatives 6a, b, respectively, all of which bear a functionally substituted silyl group in 2‐position and the boryl group in 3‐position. This is the result of selective intermolecular 1,2‐hydroboration of the vinyl or allyl group, followed by intramolecular 1,1‐organoboration of the alkynyl group. In the cases of 4a, b, potential electron‐deficient Si? H? B bridges are absent or extremely weak, whereas in 6a,b the existence of Si? H? B bridges is evident from the NMR spectroscopic data (¹H, ¹¹B, ¹³C and ²⁹Si NMR). The molecular structure of 4b was determined by X‐ray analysis. Copyright © 2005 John Wiley & Sons, Ltd.