亚千X光能谱仪响应曲线实验标定

介绍了在高强度带电粒子激发Ｘ射线光源装置上标定亚千Ｘ光能谱仪的总响应，给出了Ｘ射线二极管（铝阴极）的灵敏度的绝对标定值以及作为高能截止分光元件镍平面镜的反射率，并与国外理论值和实验值进行了比较。     

黑洞靶X光产生机制实验研究

本文报导了黑洞靶Ｘ光产生机制实验研究。实验采用波长为１．０５３μｍ，能量为３００－７００Ｊ／束，脉宽为６００－１０００ｐｓ的高斯型激光脉冲。利用三台亚千Ｘ光能谱仪，三台软Ｘ光针孔相机、一台软Ｘ光透射光栅谱仪和十个平响应亚千Ｘ射线二极管对十余种结构、尺寸腔靶实验进行测量。实验给出了腔靶发射Ｘ光的空间分辨像、时间过程、光谱结构及空间角分布测量结果。通过分析，基本弄清了黑洞靶Ｘ光产生机制。     

X射线二极管阴极灵敏度测量及其不确定度分析

 在北京同步辐射装置上,利用经过标定的硅光二极管作为标准探测器,对金、铝两种阴极的X射线二极管灵敏度进行了绝对测量。由于光源中二次谐波的影响,会造成计算所得的灵敏度降低。为了消除二次谐波的影响,实验中采用透射光栅对光源的二次谐波份额进行测量,并以此为依据对计算所得的灵敏度进行修正。通过光阴极次级电子发射模型对二次电子转换效率进行了分析,并且利用分析结果对缺省能点的阴极灵敏度进行了计算。同时对影响灵敏度计算的各种因素进行分析,最终得到的X射线二极管光阴极灵敏度的相对不确定度小于3%。     

用于激光等离子体诊断的亚千X射线能谱仪

本文简介了由滤片-X射线二极管阵列组成的具有亚纳秒时间分辨的亚千X射线能谱仪。在0．1到1．5keV能区能量分辨约为200eV。着重介绍了谱仪的结构和应用，数据处理及误差。并就激光-金平面靶相互作用实验中，在激光强度约10^14w／cm^2条件下获得的部份数据进行了简化处理，给出了激光等离子体亚千X射线辐射能谱，由此推出等离子体辐射温度。     

基于光导开关的重复频率闪光X光机北大核心CSCD

采用砷化镓光导开关和Blumlein型脉冲形成网络以级联的拓扑形式构建平顶输出功率源,驱动工业X光二极管产生X射线。提出了一种轮辐状金属-陶瓷沿面阴极,并与普通金属阴极工业X光二极管重复频率实验结果进行比较。研究表明:受限于阴极重复频率下的电流发射能力,普通金属阴极工业X光二极管难以实现1kHz重复频率,采用新型阴极二极管实现了1kHz重复频率2猝发脉冲X光输出,这两个脉冲的二极管功率、X射线信号基本一致。     

一种激光驱动的超短X射线光源

介绍一种可产生超短脉冲的新型Ｘ射线光源。它由多碱光电阴极、金靶及铍输出窗组成，当该射线管的阴极受到强光照射时，产生光电子发射，并经电场加速后轰击金靶，产生连续谱的Ｘ射线轫致辐射，经铍窗输出。用超短的可见光脉冲驱动该光源，并借助Ｘ射线扫描相机测量了该管的Ｘ射线输出，获得了５ｐｓ的Ｘ射线脉冲，这种光源可方便地用来标定Ｘ射线扫描相机的时间分辨率，此种产生超短电子脉冲的方法可在其他方面获得应用。     

0.35μm激光—铝靶X射线转换效率测量和简化模型

利用“星Ⅱ”０．３５μｍ激光辐照铝靶，得到了对于不同激光功率密度亚千Ｘ光转换效率，并提出了一个简化理论模型，来解释０．３５μｍ激光辐照铝靶Ｘ光转换效率。在这个模型中，由于热传损失激光能量，因此对于低功率密度激光，Ｘ光转换效率较低，同时对于高密度激光，由于等离子体喷射损失激光能量，因此转换效率也较低。     

X射线皮秒分幅相机在强X射线情况下的应用研究

扫描型变象管Ｘ射线皮秒分幅相机在强Ｘ射线情况下，由于空间电荷效应，像质变坏，甚至无法工作。本文简述了ＭｇＦ光阴极材料的性能。首次在Ｘ射线皮秒变象管分幅相机上的应用结果：降低了强Ｘ射线源情况下分幅管内空间电荷效应的影响，并获得了清晰的物理图像。     

软X光能谱仪探测元件响应曲线标定

报道了软X光能谱仪探测元件的能量响应曲线标定工作.实验利用北京同步辐射装置–3W1B束线及反射率计靶室,在束流40—80mA、贮存环电子能量2.2GeV专用光运行模式下,在150—1500eV能区的四个能段,做了铝阴极X射线二极管、滤光片及掠入射平面反射镜能量响应标定实验.通过实验数据比对及分析,最终给出X射线二极管在不同能量段最大可能的测量误差范围.     

软X光能谱仪探测元件晌应曲线标定

报道了软X光能诺仪探别元件的能量响应曲线标定工作．实验利用北京同步辐射装置-3W1B束经及反射率计靶室，在束流40—80mA、贮存环电子能量2.2GeV专用光运行模式下，在150—1500eV能区的四个能段，做了铝阴极X射线二权管、滤光片及擦入射平面反射镜能量响应标定实验，通过实验数据比对及分析，最终给出X射线二极管在不同能量段最大可能的测量误差范围。     

强流二极管产生大面积脉冲X射线参数计算

利用二极管的电压电流波形计算了电子束参数,建立了串级二极管和四路并联二极管阳极靶蒙特卡罗粒子输运计算模型,给出了两种情况下轫致辐射X射线场参数。结果表明:阳极靶厚度增加时,轫致辐射X射线平均能量增大,而能量转换效率先增大,后减小;距离串级二极管和四路并联二极管阳极靶5cm位置处,X射线注量分别为76.50,3.74mJ/cm2;光子平均能量分别为81.13,60.77keV;半径为12cm的圆面上,串级二极管X射线剂量呈马鞍形分布,均匀性为1.70∶1;边长为52cm的正方形平面上,四路并联二极管X射线剂量均匀性小于6.30∶1;电子束轫致辐射转换效率分别为0.29%,0.32%。     

X光二极管脉冲偏压施加技术

为了满足充气腔实验对探测器安全性能的要求,开展了X光二极管的脉冲偏压施加技术的初步研究。在8ps激光装置上,设计了一种新的基于信号发生器的同步方法,完成了X光二极管脉冲偏压加载工作方式的技术验证。脉冲偏压与直流偏压条件下,探测器上升时间与半高宽变化值不超过10%。脉冲偏压源主要指标确定为脉宽110μs,激光打靶零后2.11ms完成偏压卸载。     

XRD灵敏度在同步辐射源上的绝对刻度

 在BEPC同步辐射的3B1束线上，利用多层镜分光，获得了单色性较好，强度较高的软X光光源。采用美国进口的AXUV-100Si光二极管作为二级标准，对XRD探测器和滤片进行绝对刻度，获得了各种阴极XRD的灵敏度，其结果与LLNL的实验结果吻合，并对实验结果作了分析。     

Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes

The effect of oxygen plasma treatment on the performance of GaN Schottky barrier diodes is studied. The GaN surface is intentionally exposed to oxygen plasma generated in an inductively coupled plasma etching system before Schottky metal deposition. The reverse leakage current of the treated diodes is suppressed in low bias range with enhanced diode ideality factor and series resistance. However, in high bias range the treated diodes exhibit higher reverse leakage current and corresponding lower breakdown voltage. The X-ray photoelectron spectroscopy analysis reveals the growth of a thin GaO_x layer on GaN surface during oxygen plasma treatment. Under sub-bandgap light illumination, the plasma-treated diodes show larger photovoltaic response compared with that of untreated diodes, suggesting that additional defect states at GaN surface are induced by the oxygen plasma treatment.     

Sulphide passivation of GaN based Schottky diodes

Wet chemical passivation of n-GaN surface was carried out by dipping GaN samples in ammonium sulphide diluted in aqueous and alcoholic solvent base solutions. Photoluminescence (PL) investigations indicated that sulphide solution effectively led to the reduction of GaN surface states. Increased band edge PL peak showed that S²⁻ ions are more active in alcohol based solvents. X-ray photoelectron spectroscopy revealed reduction in surface oxides by introduction of sulphide species. Ni/n-GaN Schottky barrier diodes were fabricated on passivated surfaces. Remarkable improvement in the Schottky barrier height (0.98 eV for passivated diodes as compared to 0.75 eV for untreated diodes) has been observed.     

Characterization of Schottky barrier diodes fabricated from electrochemical oxidation of α phase brass

By careful selection of chloride ion concentration in aqueous sodium chloride, electrochemical oxidation of α phase brass is shown to permit fabrication of either p-type copper (I) oxide/metal or n-type zinc oxide/metal Schottky barrier diodes. X-ray photoelectron and Auger electron spectroscopies provide evidence that barrier formation and rectifying qualities depend on the relative surface abundance of copper (I) oxide and zinc oxide. X-ray diffraction of the resulting diodes shows polycrystalline oxides embedded in amorphous oxidation products that have a lower relative abundance than the diode forming oxide. Conventional I/V characteristics of these diodes show good rectifying qualities. When neither of the oxides dominate, the semiconductor/metal junction displays an absence of rectification.     

Study of the ion composition of an expanding magnesium plasma produced by a CO2 laser

The evolution of the ion composition of a laser plasma during its expansion over a large distance is studied. The plasma is produced by a TIR CO₂ laser with a pulse energy up to 100 J and duration of ～20 ns. X-ray diagnostics with the use of a spectrograph and X-ray PIN diodes was applied to study the plasma near the target surface. At large distances from the target surface, time-of-flight neutral-particle diagnostics with the use of an electrostatic analyzer and ion collector was applied. Calculations performed with the GIDRA-1 code agree well with experimental data.     

X光二极管阴极灵敏度标定

 在北京正负电子对撞机同步辐射装置3W1B光束线上标定了一批X光二极管的灵敏度。应用一个简单的模型描述真空X光二极管光阴极发射光电子的机制。同时，阴极表面光洁度、氧和碳沾污可以解释金属光阴极的实际灵敏度曲线与模型预测的偏离。     

“阳”加速器钛丝X箍缩光源辐射特性实验研究

为了利用X箍缩产生的点光源作为背光光源对丝阵Z箍缩内爆早期的负 载内部结构进行背光照相, 在"阳"加速器(电流峰值为500-800 kA, 上升时间约80 ns)上开展了钛丝(丝交叉角度为60°) X箍缩光源辐射特性的初步实验研究. 通过X射线二极管探测器、透射光栅谱仪、晶体谱仪和狭缝相机等诊断设备获取了箍缩点光源的辐射功率达到1.5 GW左右, 辐射能量约为1 J, 光子能量为keV量级的辐射能谱范围主要集中在1-4 keV能段, 点光源尺寸小于15 μm, 其时间尺度(辐射脉冲半高宽)达到了200 ps. 对光源特征信息进行了初步分析, 同时掌握了有效获取钛丝X箍缩单脉冲点光源的方法.     

Measurements of the power and energy spectrum of radiation of the plasma liners

A diagnostic complex based on bolometers and X-ray diodes is developed and tested. The complex is designed for measurements of the power and the energy spectrum of the pulses of soft X-rays in a quanta energy range of 70–1500 eV. Both thin films and filters formed by pulsed gas-puff in the tube of the diagnostic channel were used as X-ray filters. Experiments were carried out on a high current generator under a load current up to 2 MA. Soft X-ray pulses with a power of about 1 TW and a duration of about 40 ns were formed by the implosion of krypton liners.