特殊构型Si_2N_2分子团簇电致激发特性的密度泛函理论研究

以在可见光区有吸收峰的Cs构型的Si2N2分子团簇为研究对象,利用密度泛函B3LYP方法,在aug-ccpVTZ基组水平下优化得到了处于不同外电场中的Si2N2分子团簇的稳定结构.分析发现:在不同的外电场中,Si2N2分子构型对称性没有发生改变,均为Cs对称性,且都有6种振动模式;随着外电场强度的逐渐增大,Si2N2分子振动频率较低的前三种振动模式的频率略有减小,而后三种振动模式的频率逐渐增加;随着外电场强度的逐渐增大,在一定电场范围内最高占据分子轨道与最低空分子轨道的能隙值出现振荡,之后能隙值随着外电场强度的增大而减小.在此基础上,采用含时密度泛函TD-B3LYP方法研究了外电场对Si2N2分子吸收谱的影响规律.计算得到的吸收谱范围在紫外-可见光区,这与实验值相符合.随着外电场强度的逐渐增大,在可见光区吸收谱发生红移,最大跃迁振子强度逐渐增大.结果表明,施加外电场有利于Si2N2分子在可见光区的吸收,也有利于操控分子特定激发态的电子状态,进而调节相应的跃迁光谱特性,可达到获得所需特定波长的要求.     

SiN分子外电场情况下的发光特性

为全面分析外电场对分子发光特性的影响, 本文采用密度泛函B3P86方法6-31g(d)基组, 对SiN分子进行了基态结构的优化, 进而使用含时密度泛函方法(time dependent density functional theory, TDDFT), 计算了不同方向及大小的外电场情况下SiN分子的吸收谱、激发能、振子强度、跃迁偶极矩. 通过比较发现外电场对该分子的激发能、吸收谱、跃迁振子强度及跃迁偶极矩影响都比较明显, 说明了电场对SiN分子的激发特性影响比较复杂, 特别是在加场前后分子均有在可见光区波段的吸收谱, 这对研究分子的发光很有意义.同时对该分子所发可见光谱的产生机理进行了分析, 并与已有实验结果进行比较.     

外电场作用下C_6F_(12)O分子的结构和激发态

采用明尼苏达密度泛函(M06-2X)在6-31G(d)的基组水平上对C_6F_(12)O分子在不同外电场强度(0.000a.u.～0.040a.u.)下进行了计算。分析了不同外电场下基态的分子结构、原子电荷布居、偶极矩、分子总能量。然后利用TD-DFT方法研究了各电场下C_6F_(12)O分子的激发态激发能、波长、振子强度和紫外-可见吸收光谱(UV-vis)。结果表明分子的基态和激发态性质与外电场呈依赖关系。随着外电场的增强,分子总能量逐渐减小,偶极矩增大。分子的激发态能总体上减小,C_6F_(12)O分子变得容易激发。C_6F_(12)O分子由基态跃迁到激发态光子吸收波长总体增大,且主要集中在紫外区域。激发态的振子强度部分增加部分减少,变化复杂。UV-vis光谱随着外电场的增加,在无外电场时曲线上132 nm和162 nm出现的2处吸收峰均发生红移。     

光功能导向的SiNN分子电致发光特性研究

采用优选出的密度泛函B3P86/cc-PVTZ方法对SiNN分子进行了基态结构的优化,然后使用含时密度泛函方法(Time-dependent density functional theory,TDDFT)计算了SiNN分子前7个激发态的激发能,吸收谱,跃迁振子强度等激发特性,进而在得到不同外电场下SiNN分子的基态稳定结构的基础上,研究了外电场作用下SiNN分子的激发特性.与无电场时的激发特性进行比较发现SiNN分子的激发能,吸收谱,跃迁振子强度在外电场作用下变化明显,特别是加场后使原来跃迁禁戒的能级之间发生了跃迁,出现了紫光区的376～401 nm波长的吸收谱,电子在各能级之间的跃迁能力也发生了很大改变.同时对SiNN分子可见光谱的产生机理也进行了分析,经理论分析发现SiNN分子有可见光波段的发射谱且数值与实验测量结果非常吻合.     

外电场作用下N2O分子的结构与光谱特性

采用密度泛函B3LYP方法,在6-311+g(d)基组水平上研究了不同外电场对直线型分子N₂O的基态结构、偶极矩、轨道能级、红外和拉曼光谱特性的影响,并采用杂化CIS方法研究了N₂O分子在外电场作用下前9个激发态的激发特性.结果表明:外电场导致分子键长变化,但并没有改变分子的直线特征,偶极矩和分子总能量随外电场的增加先减小后增大,而能隙随外电场的增加先增大后减小,外电场的增加使LUMO(lowest unoccupied molecular orbital)组成由π~*轨道变为σ~*轨道,外电场使红外光谱发生移动,峰的强度增强或减弱.外电场的增加显著影响了N₂O分子的激发特性.激发能、激发波长受外电场影响发生了变化,同时,振子强度受外电场影响明显,禁阻跃迁变为可允许的跃迁,允许的跃迁在电场作用下变为禁阻跃迁或者跃迁变弱.紫外光谱在电场的作用下吸收峰发生了明显的移动,而且有新的吸收峰产生.     

外电场下Ti2O4团簇分子的激发与光谱性质研究

采用密度泛函(DFT) B3LYP方法在6-31+G基组水平上优化得到了分子轴方向不同电场作用下,Ti2O4团簇分子的基态稳定构型,电偶极矩μ,分子的总能量等,并且分析了Ti2O4团簇分子从HOMO-2到LUMO+2轨道能量的变化.在优化的构型下,用同样的基组利用CIS-DFT方法计算了外电场下Ti2O4纳米团簇分子的前9个激发态的激发能、波长和振子强度.结果表明,在有外电场的作用下,分子总能量随着外电场的增加不断减小,偶极矩随外电场的增加逐渐增大.其前线轨道的能量也随着外电场的增加逐渐减小.另外,Ti2O4团簇分子的激发能,激发波长和振子强度也受到了外电场的影响.     

基于密度泛函理论的外电场下盐交联聚乙烯分子的结构及其特性

交联聚乙烯是主要的高压电缆绝缘材料.为了研究外电场对盐交联分子结构的影响,本文对Zn原子使用def2-TZVP基组, C, H, O原子使用6-31G(d)基组,运用明尼苏达密度泛函(M06-2X)对交联聚乙烯分子进行优化得到了它的稳定结构.并研究了不同外电场(0—0.020 a.u., 1 a.u.=5.142×10~(11)V/m)作用下盐交联聚乙烯分子结构和能量变化,外电场对前线轨道的能级和成分的影响,原子之间的键级、断键和红光光谱的变化.研究结果表明:随着电场的增大,交联聚乙烯分子从空间网状结构逐渐变成线性结构,总能量降低,但势能增大,偶极矩和极化率升高,交联聚乙烯分子的稳定性随着电场的增大而降低;最高占据轨道能级持续增大,最低空轨道能级从0.011 a.u.电场开始持续降低,能隙持续降低,临界击穿场强为11.16 GV/m;沿电场方向聚乙烯链端表现出亲核反应活性,它的C—C键更容易断裂,形成甲基碳负离子,逆电场方向聚乙烯链端表现出亲电反应活性,它的C—H键更容易断裂形成H正离子;分子红外光谱高频区吸收峰明显红移,低频区吸收峰既有红移又有蓝移.     

外电场对MMTD分子结构与电子光谱影响的研究

采用密度泛函B3LYP方法,在6-311++g(d,p)基组水平上优化了不同外电场下2-巯基-5-甲基-1,3,4-噻二唑(MMTD)分子的基态稳定构型、电偶极矩、电荷分布和分子的总能量,在此基础上利用杂化CIS方法研究了外电场下MMTD分子的前9个激发态的激发能、波长和振子强度受外电场的影响规律.结果表明:1C-6S和1C-7S间键长受到Y轴向外电场影响最大,随着外电场的增加,可能最先趋于断裂;在外电场强度F=0.010a.u.时总能量达到最大,而偶极矩达到最小;最低空轨道能级LUMO受外场影响较大,而最高占据轨道能级HOMO受外电场影响较小;MMTD分子UV-Vis光谱随外场增加发生红移,且当外电场增大到F=0.020a.u.时,在可见光区域出现吸收峰;激发能、振子强度也受外电场影响,但随电场的变化比较复杂.     

环形C_(18)在外电场下的基态性质和激发特性

采用密度泛函理论方法(ωB97XD/def2-TZVP)研究了沿不同方向(x,y,z)加电场对环形C_(18)的基态几何结构、能量、电子结构、芳香性、红外及拉曼光谱特性的影响;继而采用含时的TD-ωB97XD方法研究了C18在外电场下的激发特性.研究结果表明:外电场导致分子对称性降低,偶极矩随外电场的增加逐渐增加,体系总能量和LUMO-HOMO能隙随着外电场的增加一直减小.外电场将改变环上π电子的离域特征以及分子芳香性,如分子z方向加入电场将减弱π电子离域性及分子芳香性,分子x或y方向加入电场可以增强π电子离域性及分子芳香性.外电场将改变红外光谱特征,如谐振频率的移动以及红外峰的增强或减弱.外电场对环形C18的激发特性影响较大,如当分子y方向加电场时,激发波长发生红移;同时对振子强度有很大影响,原来振子强度很强的激发态变弱或成为禁阻跃迁,而原来振子强度很弱或禁阻的激发态变强.可以通过改变外电场来控制C18的基态性质和光谱特性,促进C18在分子器件等纳米领域的应用.     

外电场作用下L1OH分子的特性研究

采用密度泛函B3LYP方法,在6-311G(d,p)基组水平上优化了不同外电场下L1OH分子的基态稳定构型、电偶极矩和分子的总能量,并且分析了L1OH分子的HOMO-2到LUMO+2轨道的能量变化,然后利用杂化CIS方法在6-311G(d,p)的基组下计算了外电场L1OH分子的前9个激发态的激发能、波长和振子强度,结果表明:在没有外电场时,L1OH分子的激发态都能够激发;在有外电场的作用下,总能量随外电场的增加而逐渐减少,偶极矩随外电场的增加而不断增加,前线轨道能量随外电场的增加不断减少,轨道分布受外电场的影响很大;外电场对L1OH分子的激发波长也产生了一定影响.     

Si3O cluster: excited properties under external electric field and oxygen-deficient defect models

This paper investigates the excited states of Si₃O molecule by using the single-excitation configuration interaction and density functional theory. It finds that the visible light absorption spectrum of Si₃O molecule comprises the yellow and the purple light without external electric field, however all the visible light is included except the green light under the action of external electric field. Oxygen-deficient defects, which also can be found in Si₃O molecule, have been used to explain the luminescence from silicon-based materials but the microstructures of the materials are still uncertain. Our results accord with the experimental values perfectly, this fact suggests that the structure of Si₃O molecule is expected to be one of the main basic structures of the materials, so the oxygen-deficient defect structural model for Si₃O molecule also has been provided to research the structures of materials.     

Properties of a Si2N molecule under an external electric field

In the present work,we adopt the ccsd/6-31g（d） method to optimize the ground state structure and calculate the vibrational frequency of the Si2N molecule.The calculated frequencies accord satisfactorily with the experimental values,which helps confirm the ground state structure of the molecule.In order to find how the external electric field affects the Si2N molecule,we use the density functional method B3P86/6-31g（d） to optimize the ground state structure and the time-dependent density functional theory TDDFT/6-31g（d） to study the absorption spectra,the excitation energies,the oscillator strengths,and the dipole moments of the Si2N molecule under different external electric fields.It is found that the absorption spectra,the excitation energies,the oscillator strengths,and the dipole moments of the Si2N molecule are affected by the external electric field.One of the valuable results is that the absorption spectra of the yellow and the blue-violet light of the Si2N molecule each have a red shift under the electric field.The luminescence mechanism in the visible light region of the Si2N molecule is also investigated and compared with the experimental data.     

Study of the excitation properties of the Si3O2 cluster under an external electric field

The structure of the Si₃O_x (x=2, 3) cluster is investigated; we find that the geometry of Si₃O₂ is similar to that of Si₃O₃ except for the oxygen-deficient defect structure (Si-Si band) which exists only in the Si₃O₂ cluster. It is known that oxygen-deficient defects are used to explain visible luminescence (especially blue, purple and ultraviolet light) from silicon-based materials, which are directly bound up with the excited states of the molecules. Therefore the excitation properties of the two clusters are also studied. Our results show that the absorption spectrum of Si₃O₂ is concentrated in the visible light region. In contrast, the absorption spectrum of Si₃O₃ is mainly located in the ultraviolet light region. The calculations are perfectly consistent with experimental data and also support the theory of oxygen-deficient defects.     

Eu$lt;sup$gt;2+$lt;/sup$gt;的掺杂浓度对BaAl$lt;sub$gt;2$lt;/sub$gt;Si$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;8$lt;/sub$gt;：Eu$lt;sup$gt;2+$lt;/sup$gt;荧光粉发光特性的影响

采用化学共沉淀法一次煅烧工艺合成了BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉.用X射线衍射仪和荧光分光光度计等对BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉的相结构、发光性能进行了测试.结果表明：化学共沉淀法一次煅烧工艺合成的BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉为单相;其激发光谱分布在240—410 nm的波长范围,峰值位于320 nm处,可以被InGaN管芯产生的350—410 nm辐射有效激发;在365 nm近紫外光的激发下,测得其发射光谱是位于465 nm附近的宽带峰.BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉的发光强度随Eu²⁺浓度的增大逐渐加强,当Eu²⁺掺杂的摩尔分数为3.5%时,发光强度达到最大值,而后随掺杂浓度的增加而减小,发生浓度猝灭;根据Dexter能量共振理论,该浓度猝灭是由于Eu²⁺的离子间交换相互作用引起的. 关键词： 2Si₂O₈：Eu²⁺')" href="#">BaAl₂Si₂O₈：Eu²⁺ 发光特性 蓝色荧光粉 化学共沉淀法     

Si2O2 molecule: structure of ground state and the excited properties under different external electric fields

Geometry and vibrational frequencies of the ground state of Si 2 O 2 molecule are studied using density function theory (DFT) at the level of cc-pvtz and 6-311++G.It is found that the optimizing value by B3lyp/cc-pvtz is closer to the experimental data.The excited properties under different external electric fields are also investigated by the time-dependent-DFT method.Transitions from the ground state of Si 2 O 2 molecule to the first singlet state under different external electric fields can take place more easily.The corresponding absorption spectral line is about 360 nm in wavelength and the excitation energy is about 3.4 eV.     

外场作用下蒽分子的激发特性研究

蒽(anthracene)具有良好的热稳定性以及较高的荧光量子产率的优点, 是最早用于研究有机发光器件(organic light-emitting device, OLED)的材料之一. 在本文中, 主要利用量子化学方法研究了不同外电场对蒽分子激发特性的影响规律. 首先采用密度泛函理论(density functional theory, DFT)在6-311G(d, p)基组水平上对蒽分子基态结构进行优化, 基于稳定基态结构, 利用含时密度泛函(time-dependent density functional theory, TDDFT)以及同一基组水平, 计算出蒽分子的前十个激发态的激发能、跃迁偶极矩、振子强度和紫外吸收光谱等数据. 然后以密度泛函B3P86方法优化出的不同外电场下蒽分子基态结构为基础, 使用TDDFT方法研究了不同外电场对蒽分子前线轨道能级和激发特性的影响规律. 结果显示, 无场时蒽分子在紫外区域234.50 nm处有一个较强的吸收峰, 对应基态电子跃迁至第5激发态吸收光子波长; 在外电场作用下, 蒽分子电子由基态跃迁到激发态的各项光谱参数均有显著变化, 加场后蒽分子的吸收光谱发生了红移, 由紫外波段移向了紫外–可见光波段, 与实验值相符合. 分子前线轨道的计算结果也表明蒽分子的最高占据轨道(highest occupied molecular orbital, HOMO)和最低未占据轨道(lowest unoccupied molecular orbital, LUMO)能量差值在不同电场下存在差异. 关键词： 蒽 外电场 激发特性     

Characterization of the VUV excitation spectrum of BaZr(BO3)2:Eu

The excitation spectra of M (M=Si⁴⁺, Ti⁴⁺) and Eu³⁺ co-doped BaZr(BO₃)₂, BaZrO₃:Eu and La₂Zr₂O₇:Eu in the vacuum ultraviolet (VUV) regions of 110-300 nm are investigated and the host-lattice absorption are characterized. The result indicated that BaZr(BO₃)₂:Eu³⁺ phosphor has a strong absorption under the VUV excitation, and in the host-lattice excitation, the strong band at 130-160 nm could be due to the BO₃ atomic groups; the band at 160-180 nm is related to the excitation of Ba-O; 180-200 nm corresponds to the charge transfer (CT) transition of Zr-O. The band at 200-235 nm due to the CT band of Eu³⁺-O²⁻ and a bond valence study explained the observed weak CT band of Eu³⁺-O²⁻ in the excitation spectra of BaZr(BO₃)₂:Eu³⁺. The emission results show that Si⁴⁺ can sensitize luminescence in the host of BaZr(BO₃)₂:Eu but Ti⁴⁺ has no improvement effect on luminescence.     

Absolute line wavenumbers in the near infrared: 12C2H2 and 12C16O2

40 absolute line wavenumbers in the 3v ₃ band of ¹²C¹⁶O₂ between 6927 cm^?1 and 6989 cm^?1 and 626 absolute line wavenumbers in the near infrared absorption spectrum of ¹²C₂H₂ between 7060 cm^?1 and 9900 cm^?1 have been measured using high resolution Fourier transform spectroscopy. The calibration of the CO₂ line wavenumbers relied on heterodyne frequencies available in the v ₁ + v ₃ band of ¹²C₂H₂ near 6556 cm^?1. The absolute uncertainty of the calibrated CO₂ line wavenumbers is estimated to 0.000 08 cm^?1. The acetylene spectra were calibrated using heterodyne frequencies available in the 2—0 band of ¹²C¹⁶O and the line wavenumbers obtained in the 3v ₃ band of ¹²C¹⁶O₂. The absolute uncertainty of the calibrated acetylene line wavenumbers is estimated to range from 0.0003 cm^?1 to 0.006 cm^?1 for strong to very weak isolated lines. Comparison with absolute line wavenumbers obtained independently at JPL in the 3v ₃ band of ¹²C₂H₂ near 9649 cm^?1, calibrated using absolute wavenumbers available in the 2—0 and 3—0 (near 6350 cm^?1) bands of ¹²C¹⁶O, shows very good agreement. Also, the vibration—rotation constants for the observed upper vibrational states of ¹²C₂H₂ were determined, but without accounting for the perturbations affecting these states.     

PdCO分子结构与势能函数

用密度泛函理论的B3LYP方法,对钯原子采用LANL2DZ收缩价基函数,碳原子和氧原子采用AUG-cc-pVTZ基组,对PdC,PdO和PdCO体系的结构进行优化,计算表明：PdC分子基态为¹Σ⁺态,键长为R_e=0.17285nm,离解能为4.919eV.PdO分子基态的平衡核间距为0.18546nm,其电子态为³Π,离解能为2.455eV,并拟合得到Murrell-Sorbie势能函数;PdCO分子有两 关键词： PdCO 分子结构 势能函数     

Blue luminescence in Tm-doped KGd(WO4)2 single crystals

Up-conversion blue emissions of trivalent thulium ions in monoclinic KGd(WO₄)₂ single crystals at 454 and 479 nm are reported for a single pump laser source at 688 nm. We grew thulium-doped KGd(WO₄)₂ single crystals at several concentrations from 0.1% to 10%. We recorded a polarized optical absorption spectrum for the ³F₂+³F₃ energy levels of thulium at room temperature and low temperature (6 K). From the low temperature emission spectra we determined the splitting of the ³H₆ ground state. The blue emissions are characterized as a function of the dopant concentration and temperature from 10 K to room temperature. To our knowledge, this is the first time that sequential two-photon excitation process (STEP) generated blue emissions in thulium-doped single crystals with a single excitation wavelength.