Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method

Multicrystalline silicon was grown by unidirectional solidification method using the accelerated crucible rotation technique. The application of the accelerated crucible rotation technique in unidirectional solidification method induced growth striations across the axial direction of the grown crystal. This striation pattern was observed from carbon concentration distribution, obtained by using Fourier transform infrared spectroscopy. The generated striation pattern was found to be weak and discontinuous. Some striations were absent, probably due to back melting, caused during each crucible rotation. From the growth striations and applied time period in crucible rotation, the growth rate was estimated by using Fourier transformation analysis.     

Influence of trivalent ions codoping on the Mo:PbWO4 luminescence properties

Trivalent ions codoping Mo:PWO boules were grown along the c-axis using the Czochralski technique. Trivalent ions codoping improved the fast components of luminescence for Mo:PWO due to suppression/compensation of hole-trapping centers. Correspondingly, trivalent ions codoping increased the fast components of the light yield. The La³⁺ and Gd³⁺ concentration in the crystal gradually decreased along the growth direction because they increased the melting point. The Y³⁺ concentration increased along this direction due to the different influence on the melting point. Compared with La:Mo:PWO, Y:Mo:PWO shows a more uniform transmittance along the growth direction.     

Nd:YVO4 crystal growth by Czochralski technique with a submerged plate

This paper is to investigate the growth of Nd:YVO₄ (yttrium vanadate) crystal by the modified Czochralski technique with a submerged plate. Numerical studies are performed to examine melt convection and heat transfer during Nd:YVO₄ growth. The attention is paid to study the effects of initial elevation of the submerged plate, crystal diameter, and melt level on melt inclusions. It is found that the increase in crystal rotation rate and crystal diameter, and the decrease in melt level will increase the axial temperature gradient at the edge and in the center of the crystal, and change the interface shape from convex to flat. The experiments are also carried out to confirm the feasibility of the proposed new technique for controlling melt inclusions in Nd:YVO₄ crystal growth.     

Efficient solution of a batch crystallization model with fines dissolution

In this paper, an efficient and accurate numerical method is proposed for solving a batch crystallization model with fines dissolution. The dissolution of small crystals (fines dissolution) is useful for improving the quality of a product. This effectively shifts the crystal size distribution (CSD) towards larger crystal sizes and often makes the distribution narrower. The growth rate can be size-dependent and a time-delay in the dissolution unit is also incorporated in the model. The proposed method has two parts. In the first part, a coupled system of ordinary differential equations (ODEs) for moments and solute mass is numerically solved in the time domain of interest. These discrete values are used to get growth and nucleation rates in the same time domain. In the second part, the discrete growth and nucleation rates along with the initial CSD are used to construct the final CSD. The analytical expression for CSD is obtained by applying the method of characteristics and Duhamel's principle on the given population balance model (PBM). A Gaussian quadrature method, based on orthogonal polynomials, is used for approximating integrals in the ODE-system of moments and solute mass. The efficiency and accuracy of the proposed numerical method is validated by a numerical test problem.     

Reactions at the liquid silicon/silica glass interface

Experiments have been carried out to determine the nature and origin of the spots growing on silica glass surfaces in contact with liquid silicon during CZ–Si crystal growth. Silica glass ampoules were filled with silicon and tempered between 5 min and 40 h at a temperature (1693 K) slightly above the melting point of silicon. Cross sections of the ampoules with solidified silicon have been examined by scanning electron microscopy and optical polarization microscopy. In addition cross sections from commercial silica glass crucibles used in the Czochralski process or dipped into the silicon melt were investigated with the same methods. At the silicon/silica glass interface different reaction zone morphologies were detected. A solution-precipitation mechanism is suggested for the fast lateral growth of the reaction zone, which is proposed to consist of small cristobalite crystals embedded in a silica glass matrix.     

Growth and characterization of CdSe single crystals by modified vertical vapor phase method

Good quality, large single crystals of CdSe were grown by the modified growth method (i.e., vertical unseeded vapor phase growth with multi-step purification of the starting material in the same quartz ampoule without any manual transfer between the steps). Lower temperature gradients (8–9°C/cm) at the growth interface were used for the crystal growth. As-grown CdSe crystals was characterized by X-ray diffraction, scanning electron microscopy, energy dispersive analyzer of X-rays, high-resistance instrument measurement, and etch-pit observation. It is found that there are two cleavage faces of (1 0 0) and (1 1 0) orientations on the crystal, the resistivity is about 10⁸ Ω cm, and the density of etch pits is about 10^3–4/cm². The crystal was cut into wafers and was fabricated into detectors. The detectors were tested using an ²⁴¹Am radiation source. γ-ray spectra at 59.5 keV were obtained. The results demonstrated that the quality of the as-grown crystals was good. The crystals were useful for fabrication of room-temperature-operating nuclear radiation detectors. Therefore, the modified growth technique is a promising, convenient, new method for the growth of high-quality CdSe single crystals.     

Effect of seeded surface area on crystal size distribution in glycine batch cooling crystallization: a seeding methodology

In batch cooling crystallization, if the seeding process is not carefully carried out, the crystal size distribution (CSD) is dispersed. The aim of this work is to determine the optimal conditions for seeding operations. Results show that the CSD is controlled if the seed surface area reaches a specific value called critical surface S_c. Nevertheless, S_c is not the only parameter to be considered. The mean crystal size of the product obtained actually depends on the size of the seeds used because of the growth rate distribution. In fact, seeds behave differently according to their crystal sizes, which accounts for the difference in crystal growth rates. Rules are proposed for seeding with the view to obtain a uni-modal CSD and a final product size predefined by the seed crystals.     

Ga segregation during Czochralski-Si crystal growth with Ge codoping

The segregation of Ga during the growth of Czochralski-Si crystals with Ge codoping was investigated. The effective segregation coefficient of Ga in Ga/Ge-codoped Si crystal growth was nearly constant over a wide Ge concentration range, even at high Ge concentrations of about 10²¹ cm⁻³. In contrast, the effective segregation coefficient increased at high B concentrations in Ga/B-codoped CZ-Si crystal growth. The segregation behavior of Ga in Ga/Ge- and Ga/B-codoped CZ-Si crystal growth was theoretically compared. The difference in the segregation coefficients of Ga as a function of the codoped impurity (Ge or B) between the two Si crystals was attributed to a difference in the excess enthalpy due to impurity incorporation into the Si crystal between Ga–Ge pairs and Ga–B pairs     

Effect of mixing on the crystal size distribution of borax decahydrate in a batch cooling crystallizer

The effect of the impeller speed upon the metastable zone width, supersaturation level, crystal growth and the crystal size distribution of borax decahydrate have been investigated to find operating conditions of a batch cooling crystallizer. The importance of impeller speed was studied in baffled stirred crystallizer with a volume of about 2 dm³, equipped with four straight blade turbine (4-SBT) cooling at a constant cooling rate. The metastable zone width was determined by visual method, while concentration changes during the process were monitored in line using ion-selective electrode. The crystal size distribution was determined by optical microscope and sieve analysis respectively. The power consumption measurements were performed for all impeller speeds examined as well. On the basis of the experimental results and observations it is evident that in an agitated batch crystallizer the above mentioned parameters are significantly influenced by hydrodynamic regime in the system determined by impeller used and its revolution speed.     

Fourier analysis based phase shift interferometric tomography for three-dimensional reconstruction of concentration field around a growing crystal

The present work is concerned with the three-dimensional reconstruction of concentration field around a crystal growing from its aqueous solution using Fourier analysis based phase shift interferometric tomography. Projection data of convective field around a growing NaClO₃ crystal have been recorded using a Mach–Zehnder interferometer. A new numerical method based on the concept of real time phase shift interferometry has been employed for the analysis of the interferograms. By interpreting the interferograms as projection data, the 3-D distribution of salt concentration has been determined using principles of tomography. Study shows that the Fourier analysis-based phase shift method is a novel approach for crystal growth studies as it requires only one interferometric image for the determination of full phase information as opposed to the conventional real time phase shift interferometry wherein at least three or more phase-shifted interferograms are needed. Results have been presented in the form of interferograms, path-integrated concentration contours and three-dimensional concentration profiles over select horizontal planes above the growing crystal. Based on the reconstruction results, distribution of salt concentration in the crystal vicinity is determined and an appropriate mechanism of buoyancy-induced fluid movement in the growth chamber is discussed.     

On favorable thermal fields for detached Bridgman growth

The thermal fields of two Bridgman-like configurations, representative of real systems used in prior experiments for the detached growth of CdTe and Ge crystals, are studied. These detailed heat transfer computations are performed using the CrysMAS code and expand upon our previous analysis [C. Stelian, A. Yeckel, J.J. Derby, Influence of thermal phenomena on crystal reattachment during the dewetted Bridgman growth, J. Cryst. Growth, in press] that posited a new mechanism involving the thermal field and meniscus position to explain stable conditions for dewetted Bridgman growth. Computational results indicate that heat transfer conditions that led to successful detached growth in both of these systems are in accordance with our prior assertion, namely that the prevention of crystal reattachment to the crucible wall requires the avoidance of any undercooling of the melt meniscus during the growth run. Significantly, relatively simple process modifications that promote favorable thermal conditions for detached growth may overcome detrimental factors associated with meniscus shape and crucible wetting. Thus, these ideas may be important to advance the practice of detached growth for many materials.     

Nano-crystallization in LaF3–Na2O–Al2O3–SiO2 glass

Aiming at tailoring optical properties, the precipitation of LaF₃ nano-crystals in LaF₃–Na₂O–Al₂O₃–SiO₂ glass-ceramics is studied thoroughly on the nano-scale using advanced transmission electron microscopic techniques. Nano-sized phase-separation droplets enriched in lanthanum and silicon are formed already in the base glass. Within these less than 20 nm large droplets, LaF₃ crystallizes upon heat treatment. The nano-crystallization mechanism revealed is self-limited since growth is restricted by the size of the droplets. An average crystallite size of around 12 nm is achieved with a narrow size distribution since the phase-separation droplets also contain silicon not incorporated into the growing crystal. Instead, excess silicon relocated to the periphery of the pre-existing phase-separation droplets forms a diffusion barrier around the LaF₃ nano-crystals preventing further crystal growth and/or ripening.     

Optimisation of low-temperature silicon epitaxy on seeded glass substrates by ion-assisted deposition

Using single crystalline Si wafer substrates, ion-assisted deposition (IAD) has recently been shown [J. Crystal Growth 268 (2004) 41] to be capable of high-quality high-rate epitaxial Si growth in a non-ultra-high vacuum (non-UHV) environment at low temperatures of about 600 °C. In the present work the non-UHV IAD method is applied to planar borosilicate glass substrates featuring a polycrystalline silicon seed layer and carefully optimised. Using thin-film solar cells as test vehicle, the best trade-off between various contamination-related processes (seed layer surface as well as bulk contamination) is determined. In the optimised IAD process, the temperature of the glass substrate remains below 600 °C. The as-grown Si material is found to respond well to post-growth treatments (rapid thermal annealing, hydrogenation), enabling respectable open-circuit voltages of up to 420 mV under 1-Sun illumination. This proves that the non-UHV IAD method is capable of achieving device-grade polycrystalline silicon material on seeded borosilicate glass substrates.     

A modified zone growth method for an InGaAs single crystal

We have been developing a zone growth method for an In_xGa_1−xAs single crystal with a uniform InAs composition, using an InGaAs source, InGaAs melt and InGaAs seed charged in a crucible. This time, we modified the zone growth method to increase the length of an InGaAs zone crystal. A gap created between the wall around the InGaAs source and the inner wall of the crucible effectively prevents the interruption in normal zone growth because it changes the directions of heat current in the source. In addition, we found that it is very important for single crystal growth that no rotation of the crucible takes place during zone growth, because the degree of mixing caused by melt convection is reduced. The zone growth region of the obtained InGaAs crystal is almost exclusively of single-crystal-type, and it is about 26 mm long, which is 1.5 times the region length of the zone single crystal reported previously. We believe that a longer growth period could have further increased the length of our zone crystal, because some of the source remained. The InAs composition (x) of the zone crystal is greater than 0.3, and the crystal diameter is 15 mm.     

Ordered arrays of epitaxial silicon nanowires produced by nanosphere lithography and chemical vapor deposition

Gold dot arrays on (1 1 1) Si substrates obtained through nanosphere lithography (NSL) combined with sputtering and annealing in Ar at 1000 °C are used to catalyze vapor liquid solid (VLS) epitaxial growth of silicon nanowires (Si NWs) using chemical vapor deposition (CVD) with SiH₄ in Ar. The NWs grow primarily epitaxially on the underlying (1 1 1) Si wafer following the four independent 〈1 1 1〉 directions. The diameter distribution of the wires reflects the diameter distribution of the catalyst gold dot arrays and is therefore predictable. The wire length depends on the size of the gold catalyst for the same CVD parameters. The wire position is foreseeable within the limits of the pattern geometrical quality, but one-to-one growth of NWs to gold dots is not always observed, probably due to (very locally) the remaining presence of silicon oxide. Overall, this inexpensive patterning method for obtaining high-quality crystalline VLS Si NWs by CVD fulfills the requirements of many device applications, where patterning control, quality and reproducibility of the nanostructures are crucial.     

The growth of mixed alkaline-earth fluorides for laser host applications

A comprehensive analysis is implemented concerning the growth, properties, and applications of doped-co-doped single and mixed alkali earth fluoride systems. Calcium-strontium fluoride solid solutions with a Sr content proportion varying widely between 0.007 and 0.675 mol.% are obtained as a batch of axis-symmetrical boules grown by a Bridgman-Stockbarger (BS) method. The crystallization front (CF) can be controlled to retain a convex CF-shape that is favourable for normal growth of single crystals. This achieved using a broad adiabatic furnace zone (AdZ) independently of the boules’ composition. The influence of the thermal field distribution on the CF and the real crystallization rate (CR), which are both critically decisive in controlling crystal quality, were originally assessed using empirically derived formulas. The optical characteristics of the grown boules were monitored by measuring the external transmittance t and calculating the total losses following light irradiation of optical windows that were prepared from sections of the boules that had been cut parallel to one another. The t-measurements were performed by two different techniques and the comparative analysis of the results reliably indicates any inhomogeneity in the grown boules. A simple supercooling criterion proved to closely relate the morphological stability of the CF enabling one to set up the optimum growth conditions. Thus the normal growth criterion outlines the concentration bounds where the isotropic growth mechanism is replaced by cellular anisotropic growth. A procedure has been established for provisioning researchers with optical quality calcium-strontium fluoride crystals with widely varying composition grown under practically identical conditions. As a consequence one can explore possible reasons that can affect the growth mechanism for this or any other systems with a fluoride structure and so provide scope aimed at the future improvement of the crystal quality thereby enlarging the field of mixed fluoride systems’ applications.     

A simple method to synthesize α-Si3N4, β-SiC and SiO2 nanowires by carbothermal route

α-Si₃N₄ nanowires, β-SiC nanowires and SiO₂ amorphous nanowires are synthesized via the direct current arc discharge method with a mixture of silicon, activated carbon and silicon dioxide as the precursor. The α-Si₃N₄ nanowires, β-SiC nanowires and SiO₂ amorphous nanowires are about 50–200 nm in stem diameter and 10–100 μm in length. α-Si₃N₄ nanowires and β-SiC nanowires consist of a solid single-crystalline core along the [0 0 1] and [1 1 1] directions, respectively, wrapped within an amorphous SiO_x layer. The direct current arc plasma-assisted self-catalytic vapor–solid and/or vapor–liquid–solid (VLS) growth processes are proposed as the growth mechanism of the nanowires.     

Flux growth and characterizations of NdPO4 single crystals

Neodymium phosphate single crystals, NdPO₄, have been grown by a flux growth method using Li₂CO₃-2MoO₃ as a flux. The as-grown crystals were characterized by X-ray powder diffraction(XRPD), differential thermal analysis (DTA) and thermogravimetric analysis (TG) techniques. The results show that the as-grown crystals were well crystallized. The crystal was stable over the temperature range from 26 to 1200 °C in N₂. The specific heat of NdPO₄ crystal at room temperature was 0.41 J/g °C. The absorption and the fluorescence spectra of NdPO₄ crystal were also measured at room temperature.     

Total pressure‐controlled PVT SiC growth for polytype stability during using 2D nucleation theory

A total pressure‐controlled physical vapor transport growth method that stabilizes SiC polytype is proposed. The supersaturation of carbon during SiC growth changed as a function of the growth time due to changes in the temperature difference between the surfaces of the source and the grown crystal. Supersaturation also varied as a function of the pressure inside the furnace. Therefore, modification of the pressure as a function of growth time allowed for constant supersaturation during growth. The supersaturation was calculated based on classical thermodynamic nucleation theory using data for heat and species of Si₂C and SiC₂ transfer in a furnace obtained from a global model. Based on this analysis, a method for polytype‐stabilized SiC growth was proposed that involves decreasing the pressure as a function of growth time. The 4H‐SiC prepared using this pressure‐controlled method was more stable than that of 4H‐SiC formed using the conventional constant‐pressure method.     

Single crystal growth of copper phthalocyanine using exaltation–evaporation growth method

A new method of growing single crystal for β-form copper phthalocyanine (CuPc) is presented in this paper. Melted anthracene was used as solvent of CuPc. The method, vaporizing the solvent using an automatic exaltation machine, was employed to grow CuPc single crystals. The needle-like single crystals of CuPc up to 11.6 mm in length were obtained by applying this method. The influences of different temperatures, exaltation speeds and concentrations on the single crystals growth were also discussed. The method was called exaltation–evaporation growth method.