Optimisation of low-temperature silicon epitaxy on seeded glass substrates by ion-assisted deposition |
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Authors: | Axel Straub Daniel Inns Mason L Terry Yidan Huang Per I Widenborg Armin G Aberle |
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Institution: | Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, University of New South Wales, UNSW Sydney NSW 2052, Australia |
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Abstract: | Using single crystalline Si wafer substrates, ion-assisted deposition (IAD) has recently been shown J. Crystal Growth 268 (2004) 41] to be capable of high-quality high-rate epitaxial Si growth in a non-ultra-high vacuum (non-UHV) environment at low temperatures of about 600 °C. In the present work the non-UHV IAD method is applied to planar borosilicate glass substrates featuring a polycrystalline silicon seed layer and carefully optimised. Using thin-film solar cells as test vehicle, the best trade-off between various contamination-related processes (seed layer surface as well as bulk contamination) is determined. In the optimised IAD process, the temperature of the glass substrate remains below 600 °C. The as-grown Si material is found to respond well to post-growth treatments (rapid thermal annealing, hydrogenation), enabling respectable open-circuit voltages of up to 420 mV under 1-Sun illumination. This proves that the non-UHV IAD method is capable of achieving device-grade polycrystalline silicon material on seeded borosilicate glass substrates. |
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Keywords: | A1 Crystal structure A1 Impurities A3 Molecular beam epitaxy A3 Physical vapour deposition processes B2 Semiconducting silicon B3 Solar cells |
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