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利用分子动力学方法研究了H原子与C/Be样品的相互作用过程,当H原子轰击C/Be样品时,发现有一些H原子渗入样品中并且滞留在样品中,H原子的滞留率随H原子的初始入射能量的升高呈线性增长,有些沉积在样品中H原子与C原子相互作用形成H-C键。溅射产物以H原子和H2分子为主。H和H2的产额率随初始入射能量的变化趋势相反,分析了不同机制下产物H和H2的产额率随初始入射能量的关系,且通过分析H原子的入射能量和样品的原子密度的关系来研究轰击后的样品,发现样品中原子分布变化很小,同时分析了化合物中的化学键分布变化较小,只是其化学键的分布峰向样品表面移动。     

分子动力学模拟H原子与Si的表面相互作用

通过分子动力学模拟了入射能量对H原子与晶Si表面相互作用的影响. 通过模拟数据与实验数据的比较, 得到H原子吸附率随入射量的增加 呈先增加后趋于平衡的趋势. 沉积的H原子在Si表面形成一层氢化非晶硅薄膜, 刻蚀产物(H₂, SiH₂, SiH₃和SiH₄)对H原子吸附率趋于平衡有重要影响, 并且也决定了样品的表面粗糙度. 当入射能量为1 eV时, 样品表面粗糙度最小. 随着入射能量的增加, 氢化非晶硅薄膜中各成分(SiH, SiH₂, SiH₃)的量以及分布均有所变化. 关键词： 分子动力学 吸附率 表面粗糙度 氢化非晶硅薄膜     

C+轰击铍的分子动力学模拟

使用分子动力学模拟方法研究了入射能量对C⁺离子与Be样品表面相互作用的影响。模拟结果表明,随着C⁺离子的入射能量增大,C⁺离子注入深度也增加,Be原子的溅射产额近似线性增加,而滞留在样品中的C原子数量变化不大,在C⁺离子轰击Be样品的初始阶段,样品中Be原子的溅射产额较大,而随着C⁺离子注入剂量的增加,Be原子的溅射产额逐渐减小并趋于稳定。在此作用过程中,在样品表面形成一个富C层,减缓了样品中Be原子的溅射速率,起到了保护Be样品的作用。     

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采用分子动力学方法模拟200eV的CH3粒子轰击到不同基底温度的钨样品上,分析了C、H原子在钨表面的沉积、散射及溅射情况,结果表明C、H原子的沉降量均随入射剂量的增加而增加。在基底温度为100K时,相同入射剂量下沉积的C原子最多,而当基底温度为1200K,在入射剂量大于1.5X1016cm-2时,C原子的沉降量小于其它基底温度下的C的沉降量。CH3在轰击样品时发生了分解,各种分解情况随基底温度变化较小,其中不同基底温度下一级分解率在40%上下波动,二级分解在23%左右,而完全分解的CH3在9%左右。C、H原子的散射角主要分布在5°~85°间,散射C原子分布的最大值分布在40%~50°或50°~60°间,散射C原子分布的最小值分布在0°~10°或80°~90°间;而不同基底温度下散射H原子分布的最大值均在40°~50°间,最小值均在0°~10°间。散射C原子的能量在0~140eV之间,散射能量为0~120eV的C原子占散射总量的98%以上,散射C原子平均能量随基底温度的增加而增加,其变化从65.5eV增加到68.5eV;散射H原子的能量也在0~140eV之间,但大约70%的散射H原子能量在40eV以内,散射平均能量随基底温度的增加而减小,其变化从13.92eV减小到13.05eV。     

载能氢同位素原子与石墨(001)面碰撞的分子动力学研究

采用分子动力学方法研究了载能H同位素原子与石墨晶体碰撞的同位素效应. 碳氢系统的强共价键作用和石墨层间的弱van der Waals力分别用REBO和Ito半经验势函数来描述. 研究发现: 随着入射原子质量的增加, 上表面吸附几率和反射几率的峰值都会向高能区移动; 相比于H, ²H入射原子, ³H入射原子具有较高的吸附几率——包括上表面吸附和内部吸附; 穿透石墨晶体, ²H, ³H原子所需的能量较高; 原子质量和原子入射能量都会影响入射粒子与不同石墨层之间的能量传递过程. 这些结果对理解碳基材料的³H滞留机制有重要意义.     

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采用分子动力学模拟方法研究了样品温度对Ar+与SiC样品表面相互作用的影响。由模拟结果可知,SiC样品中Si原子的溅射产额随着温度的升高而增加,而温度对C原子的溅射产额影响不大。在相同温度下,Si原子的溅射产额要高于C原子的溅射产额。溅射出来的Si原子和C原子主要来源于样品的表层区域,样品中的Si和C原子密度、键密度及它们的成键方式也发生了较大的变化。初始样品中Si和C原子的密度是均匀的,而被轰击过后的样品表面Si原子的密度要高于C原子,而样品中部C原子的密度要高于Si原子。初始样品都是Si-C键,成键方式为Si-Csp3;被轰击过后又有Si-Si和C-C键,成键方式也发生了变化,还有Si-Csp1和Si-Csp2。     

样品温度对Ar~+与SiC样品表面相互影响的分子动力学模拟

采用分子动力学模拟方法研究了样品温度对Ar+与SiC样品表面相互作用的影响。由模拟结果可知,SiC样品中Si原子的溅射产额随着温度的升高而增加,而温度对C原子的溅射产额影响不大。在相同温度下,Si原子的溅射产额要高于C原子的溅射产额。溅射出来的Si原子和C原子主要来源于样品的表层区域,样品中的Si和C原子密度、键密度及它们的成键方式也发生了较大的变化。初始样品中Si和C原子的密度是均匀的,而被轰击过后的样品表面Si原子的密度要高于C原子,而样品中部C原子的密度要高于Si原子。初始样品都是Si-C键,成键方式为Si-Csp3;被轰击过后又有Si-Si和C-C键,成键方式也发生了变化,还有Si-Csp1和Si-Csp2。     

F原子与SiC(100)表面相互作用的分子动力学模拟

本文采用分子动力学模拟方法研究了F原子(能量在0.5—15 eV之间)与表面温度为300 K的SiC(100)表面的相互作用过程. 考察了不同能量下稳定含F反应层的形成过程和沉积、刻蚀过程的关系以及稳定含F反应层对刻蚀的影响. 揭示了低能F原子刻蚀SiC的微观动力学过程. 模拟结果表明伴随着入射F原子在表面的沉积量达到饱和,SiC表面将形成一个稳定的含F反应层. 在入射能量小于6 eV时,反应层主要成分为SiF₃,最表层为Si-F层. 入射能量大于6 eV时,反应层主要成分为SiF. 关键词： 分子动力学 刻蚀 能量 SiC     

聚变α粒子对第一壁辐照损伤的蒙特-卡罗研究(Ⅲ)—— 固体中位移原子深度分布

本文用基于两体碰撞的蒙特-卡罗方法研究α粒子轰击固体靶的位移原子深度分布,并分析了位移原子深度分布与固体中能量沉积的关系。文中给出入射α粒子能量、入射角及靶材料的改变对位移原子深度分布的影响。结果表明,位移原子数与轰击离子在靶中的弹性能量损失密切相关。聚变α粒子在SiC中产生的位移损伤远小于它在不锈钢材料中的位移损伤。     

低能Pt原子与Pt(111)表面相互作用的分子动力学模拟

利用分子动力学模拟方法详细研究了低能Pt原子与Pt(111)表面的相互作用所导致的表面吸附原子、溅射原子、表面空位的产生及分布规律,给出了表面吸附原子产额、溅射原子产额和表面空位产额随入射Pt原子能量的变化关系.模拟结果显示:溅射产额、表面吸附原子产额和表面空位产额随入射原子的能量的增加而增加,溅射原子、表面吸附原子的分布花样呈3度旋转对称性质;当入射粒子能量高于溅射阈值时,表面吸附原子主要是基体最表面原子的贡献,入射粒子直接成为表面吸附原子的概率很小.其主要原因是:当入射粒子能量高于溅射能量阈值时,入射 关键词： 分子动力学 低能粒子 表面原子产额 空位缺陷 溅射     

Molecular dynamics simulations of reactive etching of SiC by energetic fluorine

Molecular dynamics simulations were performed to investigate F continuously bombarding Si-terminated 3C-SiC(001) surfaces with incident energies of 10, 100 and 200 eV at normal incidence and room temperature. For an energy of 10 eV, deposition only occurs on the surface. For energies larger than 10 eV, accompanying the saturation of F uptake, a balance between F deposition from the incident atoms and F removal from the fluorinated substrate is established, while the steady-state etching is reached. The simulated results demonstrate that Si atoms in SiC are preferentially etched, which is in good agreement with experiments. The preferential etching of Si results in formation of a C-rich interfacial layer whose thickness increases with increasing incident energy. The analysis shows that Si-containing etch products are dominant. PACS 52.65.Yy; 81.65.Cf; 52.77.Dq     

Etching of SiC by energetic F2: Molecular dynamics simulation

Molecular dynamics (MD) simulations were performed to investigate F₂ continuously bombarding silicon carbide (SiC) surfaces with energies in the range of 50-200 eV at normal incidence and room temperature. The Tersoff-Brenner form potential was used. The simulation results show that the uptake of F atoms, the etch yields of C and Si from the initial substrate, and the surface structure profile are sensitive to the incident energy. Like occurrence in Si etching, steady-state etching is observed and an F-containing reaction layer is formed through which Si and C atoms are removed. A carbon-rich surface layer after bombarding by F₂ is observed which is in good agreement with experiments. In the reaction layer, SiF in SiF₂ species are dominant; with increasing incident energy, the total fraction of SiF and SiF₂ increases, while the amount of SiF₃ and SiF₄ decreases. Finally, etching mechanisms are discussed.     

Hydrocarbon film growth by energetic CH3 molecule impact on SiC (0 0 1) surface

Classic molecular dynamics (MD) calculations were performed to investigate the deposition of thin hydrocarbon film. SiC (1 0 0) surfaces were bombarded with energetic CH₃ molecules at impact energies ranging from 50 to 150 eV. The simulated results show that the deposition yield of H atoms decreases with increasing incident energy, which is in good agreement with experiments. During the initial stages, with breaking Si-C bonds in SiC by CH₃ impacting, H atoms preferentially reacts with resulting Si to form Si-H bond. The C/H ratio in the grown films increases with increasing incident energy. In the grown films, CH species are dominant. For 50 eV, H-Csp3 bond is dominant. With increasing energy to 200 eV, the atomic density of H-Csp2 bond increases.     

低能Cl原子刻蚀Si(100)表面的分子动力学模拟

使用分子动力学模拟方法研究了不同能量(0.3—10 eV)的Cl原子对表面温度为300 K的Si(100)表面的刻蚀过程.模拟中采用了Tersoff-Brenner势能函数来描述Cl-Si体系的相互作用.模拟结果显示,随着入射Cl原子在表面的吸附达到饱和,Si表面形成一层富Cl反应层.这和实验结果是一致的.反应层厚度随入射能量增加而增加.反应层中主要化合物类型为SiCl,且主要分布于反应层底部.模拟结果发现随初始入射能量的增加,Si的刻蚀率增大.在入射能量为0.3,1和5 eV时,主要的Si刻蚀产物为Si 关键词： 分子动力学 Cl刻蚀Si 分子动力学模拟 微电子机械系统     

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The scattering behaviour of H atoms on Be surface by molecular dynamics simulations was reported in this paper. When the incident energy increases from 1 to 9eV, the outcome shows the H atoms scattering rate decrease with incident energy increasing, and increase with incident angle increasing. When incident energy is 1eV, all of incident H atoms scatter above the Be surface. When incident energy are 5 and 9eV, 14.7% and 35.8% of H atoms inject into the Be sample and then scatter, respectively, and incident depths increase with energy increasing. Scattering density and energy as function of scattering angle were also discussed.     

Bombardment induced surface chemistry on Si under keV C60 impact

Molecular dynamics simulations of the sputtering of Si by C₆₀ keV bombardment are performed in order to understand the importance of chemical reactions between C atoms from the projectile and Si atoms in the target crystal. The simulations predict the formation of strong covalent bonds between the C and Si atoms, which result in nearly all of the C atoms remaining embedded in the surface after bombardment. At low incident kinetic energies, little sputtering of Si atoms is observed and there is a net deposition of solid material. As the incident kinetic energy is increased, the sputtering yield of Si atoms increases. At 15 keV, the yield of sputtered Si atoms is more than twice the number of C atoms deposited, and there is a net erosion of the solid material.     

CF interaction with Si(1 0 0)-(2 × 1): Molecular dynamics simulation

In this study, the interaction of CF with the clean Si(1 0 0)-(2 × 1) surface at normal incidence and room temperature was investigated using molecular dynamics simulation. Incident energies of 2, 12 and 50 eV were simulated. C atoms, arising from dissociation, preferentially react with Si to form Si-C bonds. A Si_xC_yF_z interfacial layer is formed, but no etching is observed. The interfacial layer thickness increases with increasing incident energy, mainly through enhanced penetration of the silicon lattice. Silicon carbide and fluorosilyl species are formed at 50 eV, which is in good agreement with available experimental data. The level of agreement between the simulated and experimental results is discussed.