All‐optical modulation based on silicon quantum dot doped SiOx:Si‐QD waveguide

All‐optical modulation based on silicon quantum dot doped SiO_x:Si‐QD waveguide is demonstrated. By shrinking the Si‐QD size from 4.3 nm to 1.7 nm in SiO_x matrix (SiO_x:Si‐QD) waveguide, the free‐carrier absorption (FCA) cross section of the Si‐QD is decreased to 8 × 10⁻¹⁸ cm² by enlarging the electron/hole effective masses, which shortens the PL and Auger lifetime to 83 ns and 16.5 ps, respectively. The FCA loss is conversely increased from 0.03 cm⁻¹ to 1.5 cm⁻¹ with the Si‐QD size enlarged from 1.7 nm to 4.3 nm due to the enhanced FCA cross section and the increased free‐carrier density in large Si‐QDs. Both the FCA and free‐carrier relaxation processes of Si‐QDs are shortened as the radiative recombination rate is enlarged by electron–hole momentum overlapping under strong quantum confinement effect. The all‐optical return‐to‐zero on‐off keying (RZ‐OOK) modulation is performed by using the SiO_x:Si‐QD waveguides, providing the transmission bit rate of the inversed RZ‐OOK data stream conversion from 0.2 to 2 Mbit/s by shrinking the Si‐QD size from 4.3 to 1.7 nm.     

Resonant Raman scattering by strained and relaxed germanium quantum dots

This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO₂ layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm^?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed.     

Nanotextured multicrystalline Al‐BSF solar cells reaching 18% conversion efficiency using industrially viable solar cell processes

We report recent achievements in adapting industrially used solar cell processes on nanotextured surfaces. Nanostructures were etched into c‐Si surfaces by dry exothermic plasma‐less reaction of F species with Si in atmospheric pressure conditions and then modified using a short post‐etching process. Nanotextured multicrystalline wafers are used to prepare Al‐BSF solar cells using industrially feasible solar cell proc‐ essing steps. In comparison to the reference acidic textured solar cells, the nanostructured cells showed gain in short circuit current (J_sc) of up to 0.8 mA/cm² and absolute gain in conversion efficiency of up to 0.3%. The best nanotextured solar cell was independently certified to reach the conversion efficiency of 18.0%. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Hydrothermal Synthesis of Nickel Phosphate Nanorods for High‐Performance Flexible Asymmetric All‐Solid‐State Supercapacitors

Ni₂₀[(OH)₁₂(H₂O)₆][(HPO₄)₈(PO₄)₄]·12H₂O nanorods are successfully synthesized via a one‐pot hydrothermal reaction. A high‐performance flexible asymmetric all‐solid‐state supercapacitor based on the obtained Ni₂₀[(OH)₁₂(H₂O)₆][(HPO₄)₈(PO₄)₄]·12H₂O nanorods (positive electrode) and graphene nanosheets (negative electrode) is successfully assembled. It is the first report of this nanomaterial applied for all‐solid‐state supercapacitors. Interestingly, a maximum volumetric energy density of 0.446 mW h cm^?3 at a current density of 0.5 mA cm^?2 and a maximum power density of 44.1 mW cm^?3 at a current density of 6.0 mA cm^?2 are achieved by the as‐assembled device. What's more, the device also shows excellent mechanical flexibility and little capacitance change after over 5000 charge/discharge cycles at a current density of 0.5 mA cm^?2.     

Simple solar cells of 3.5% efficiency with antimony sulfide‐selenide thin films

Thin films of antimony sulfide‐selenide solid solutions (Sb₂S_x Se_3–x) were prepared by chemical bath deposition and thermal evaporation to constitute solar cells of a transparent conductive oxide (FTO)/CdS/Sb₂S_x Se_3–x/C–Ag. The cell parameters vary depending on the sulfide‐selenide composition in the films. The best solar cell efficiency of 3.6% was obtained with a solid solution Sb₂S_1.5Se_1.5 prepared by thermal evaporation of the precipitate for which the open circuit voltage is 0.52 V and short circuit current density, 15.7 mA/cm²under AM 1.5G (1000 W/m²) solar radiation. For all‐chemically deposited solar cells of Sb₂S_1.1Se_1.9 absorber, these values are: 2.7%, 0.44 V, and 15.8 mA/cm², and for Sb₂S_0.8Se_2.2, they are: 2.5%, 0.38 V and 18 mA/cm². (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Optical management in high‐efficiency thin‐film silicon micromorph solar cells with a silicon oxide based intermediate reflector

In the effort to increase the stable efficiency of thin film silicon micromorph solar cells, a silicon oxide based intermediate reflector (SOIR) layer is deposited in situ between the component cells of the tandem device. The effectiveness of the SOIR layer in increasing the photo‐carrier generation in the a‐Si:H top absorber is compared for p–i–n devices deposited on different rough, highly transparent, front ZnO layers. High haze and low doping level for the front ZnO strongly enhance the current density (J_sc) in the μc‐Si:H bottom cell whereas J_sc in the top cell is influenced by the angular distribution of the transmitted light and by the reflectivity of the SOIR related to different surface roughness. A total J_sc of 26.8 mA/cm² and an initial conversion efficiency of 12.6% are achieved for 1.2 cm² cells with top and bottom cell thicknesses of 300 nm and 3 μm, and without any anti‐reflective coating on the glass. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Flexible Ti‐Doped FeOOH Quantum Dots/Graphene/Bacterial Cellulose Anode for High‐Energy Asymmetric Supercapacitors

Ti‐doped FeOOH quantum dots (QD) decorated on graphene (GN) sheets are designed and fabricated by a facile and scalable synthesis route. Importantly, the Ti‐doped FeOOH QD/GN are successfully dispersed within bacterial cellulose (BC) substrate as bending anode with large loading mass for flexible supercapacitor. By virtue of its favorable architecture, this composite electrode exhibits a remarkable areal capacitance of 3322 mF cm^?2 at 2 mA cm^?2, outstanding cycle performance (94.7% capacitance retention after 6000 cycles), and excellent mechanical strength (68.7 MPa). To push the energy density of flexible supercapacitors, the optimized asymmetric supercapacitor using Mn₃O₄/GN/BC as positive electrode and Ti‐doped FeOOH QD/GN/BC as negative electrode can be cycled reversibly in the operating voltage range of 0–1.8 V and displays ultrahigh areal energy density of 0.541 mWh cm^?2, ultrahigh volumetric energy density of 9.02 mWh cm^?3, reasonable cycling performance (9.4% decay in specific capacitance after 5000 cycles), and good capacitive retention at bending state.     

Electroluminescence with micro-watt output from ultra-small sized Si quantum dots/amorphous SiO2 multilayers prepared by laser crystallization method

We report the fabrication of Si quantum dots (QDs)/SiO₂ multilayers by using KrF excimer laser (248 nm) crystallization of amorphous Si/SiO₂ multilayered structures on ITO coated glass substrates. Raman spectra and transmission electron microscopy demonstrate the formation of Si QDs and the size can be controlled as small as 1.8 nm. After laser crystallization, Al electrode is evaporated to obtain light emitting devices and the room temperature electroluminescence (EL) can be detected with applying the DC voltage above 8 V on the top gate electrode. The luminescent intensity increases with increasing the applied voltage and the micro-watt light output is achieved. The EL behaviors for samples with different Si dot sizes are studied and it is found that the corresponding external quantum efficiency is significantly enhanced in sample with ultra-small sized Si QDs.     

p‐Type Dye‐Sensitized Solar Cells with a CdSeS Quantum‐Dot‐Sensitized NiO Photocathode for Outstanding Short‐Circuit Current

CdSeS quantum dots (QDs) are firstly introduced into a NiO photocathode for photocathodic dye‐sensitized solar cells (p‐DSCs). The optimized sample exhibits a short‐circuit density (14.68 mA cm^?2) and power conversion efficiency (1.02%) that are almost one order of magnitude higher than the reported value of p‐QDSCs. Steady‐state photoluminescence and time‐resolved photoluminescence measurements indicate that the photoexcited holes can be almost completely injected from CdSeS QDs into the valence band of NiO. At the same time, it can be observed from electrochemical impedance spectra measurements.     

Microcrystalline silicon‐carbon alloys as anti‐reflection window layers in high efficiency thin film silicon solar cells

Microcrystalline silicon‐carbide (μc‐SiC:H) films were prepared using hot wire chemical vapor deposition at low substrate temperature. The μc‐SiC:H films were employed as window layers in microcrystalline silicon (μc‐Si:H) solar cells. The short‐circuit current density (J_SC) in these n‐side illuminated n–i–p cells increases with increasing the deposition time t_W of the μc‐SiC:H window layer from 5 min to 60 min. The enhanced J_SC is attributed to both the high transparency and an anti‐reflection effect of the μc‐SiC:H window layer. Using these favourable optical properties of the μc‐SiC:H window layer in μc‐Si:H solar cells, a J_SC value of 23.8 mA/cm² and cell efficiencies above 8.0% were achieved with an absorber layer thickness of 1 μm and a Ag back reflector. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

PbS colloidal quantum dot/ZnO‐based bulk‐heterojunction solar cells with high stability under continuous light soaking

PbS colloidal quantum dot (CQD)‐based depleted bulk‐heterojunction solar cells were constructed, using the 1.2 μm thick nanowire array infiltrated with PbS QDs bearing Br ligands. The long‐term stability tests were performed on the solar cells without encapsulation in air under continuous light soaking using a Xe lamp with an AM1.5G filter (100 mW cm^?2). Time course of solar cell performances during the tests showed two time periods with distinct behavior, that is, the initial transient time period and the relatively stable region following it. The power conversion efficiency was found to keep approximately 90% of the initial value at the end of the 3000 h light soaking test. The stability tests suggest that the PbS surface modification or passivation reactions play an important role in achieving such a high stability, and demonstrate that PbS CQD/ZnO nanowire array‐based depleted bulk‐heterojunction solar cells are highly stable. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effects of LaNiO<Subscript>3</Subscript> on the structures and properties of SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> thin films

SrBi₂Ta₂O₉(SBT)/LaNiO₃(LNO)/Si and SBT/Pt/TiO₂/SiO₂/Si multilayers were fabricated by pulsed laser deposition. With Pt top electrodes, the measured remanent polarization (2P_r) of Pt/SBT/LNO/Si and Pt/SBT/Pt/TiO₂/SiO₂/Si capacitors was 6.5 C/cm² and 5.2 C/cm², respectively. Using LNO as both bottom electrodes and buffer layers, enhanced non-c-axis crystalline SBT films were induced, which resulted in a 2P_r greater than that of the Pt/SBT/Pt/TiO₂/SiO₂/Si capacitor. The hysteresis loop of the Pt/SBT/LNO/Si capacitor showed a great external-field-dependent horizontal shift. Using an electron-injection model, this dependence was addressed. The fatigue-free property of the Pt/SBT/LNO/Si capacitor was experimentally established, in that the non-volatile polarization decreased by less than 5% of the initial value after 1.44×10⁹ switching cycles . PACS 77.84.Dy; 68.65.+g     

Electroluminescence enhancement in ultraviolet organic light‐emitting diode with graded hole‐injection and ‐transporting structure

Electroluminescent intensity and external quantum efficiency (EQE) in ultraviolet organic light‐emitting diodes (UV OLEDs) have been remarkably enhanced by using a graded hole‐injection and ‐transporting (HIT) structure of MoO₃/N,N ′‐bis(naphthalen‐1‐yl)‐N,N ′‐bis(phenyl)‐benzidine/MoO₃/4,4′‐bis(carbazol‐9‐yl)biphenyl (CBP). The graded‐HIT based UV OLED shows superior short‐wavelength emis‐ sion with spectral peak of ～410 nm, maximum electroluminescent intensity of 2.2 mW/cm² at 215 mA/cm² and an EQE of 0.72% at 5.5 mA/cm². Impedance spectroscopy is employed to clarify the enhanced hole‐injection and ‐transporting capacity of the graded‐HIT structure. Our results provide a simple and effective approach for constructing efficient UV OLEDs. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Improved performance of silicon‐nanoparticle film‐coated dye‐sensitized solar cells

Silicon (Si) nanoparticles with average size of 13 nm and orange–red luminescence under UV absorption were synthesized using electrochemical etching of silicon wafers. A film of Si nanoparticles with thickness of 0.75 µm to 2.6 µm was coated on the glass (TiO₂ side) of a dye‐sensitized solar cell (DSSC). The cell exhibited nearly 9% enhancement in power conversion efficiency (η) at film thickness of ～2.4 µm under solar irradiation of 100 mW/cm² (AM 1.5) with improved fill factor and short‐circuit current density. This study revealed for the first time that the Si‐nanoparticle film converting UV into visible light and helping in homogeneous irradiation, can be utilized for improving the efficiency of the DSSCs. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Development of gel polymer electrolytes for application in quantum dot-sensitized solar cells

A methylcellulose–polysulfide gel polymer electrolyte has been prepared for application in quantum dot-sensitized solar cells (QDSSCs) having the configuration FTO/TiO₂/CdS/ZnS/SiO₂/electrolyte/Pt(cathode). The electrolyte with the composition of 30.66 wt.% methylcellulose, 67.44 wt.% Na₂S, and 1.90 wt.% sulfur exhibits the highest conductivity of 0.183 S cm^?1 with the lowest activation energy of 6.14 kJ mol^?1. CdS quantum dot sensitizers have been deposited on TiO₂ film via the successive ionic layer absorption and reaction (SILAR) method. The QDSSC fabricated using the highest conducting electrolyte and CdS QD prepared with five SILAR cycles exhibits a power conversion efficiency (PCE) of 0.78%. After deposition of zinc sulfide (ZnS) and silicon dioxide SiO₂ passivation layers, the PCE of the QDSSC with photoanode arrangement of TiO₂/CdS(5)/ZnS(2)/SiO₂ increased to 1.42%, an improvement in performance by 82%.     

19.4%‐efficient large‐area fully screen‐printed silicon solar cells

We demonstrate industrially feasible large‐area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm² p‐type 2–3 Ω cm boron‐doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen‐printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic‐layer‐deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S_rear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J_sc of up to 38.9 mA/cm² and V_oc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full‐area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen‐printed solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Water Evaporation Induced Conversion of CuSe Nanoflakes to Cu2−xSe Hierarchical Columnar Superstructures for High‐Performance Solar Cell Applications

In this work, a facile and low‐temperature water evaporation approach to prepare columnar superstructures consisting of face centered cubic (fcc) Cu_2?xSe nanoflakes stacked along 〈111〉 direction is reported. Formation of such unique stacked nanoflake assemblies is resulted from oriented attachment of isolated hexagonal CuSe nanoflakes along the 〈001〉 direction with a ripening effect driven by solvent evaporation, and then followed by a phase conversion into fcc Cu_2?xSe. Evolution from hexagonal CuSe nanoflakes to fcc Cu_2?xSe columnar superstructures results in obvious red‐shift of band‐gap absorption edge from 670 to 786 nm and dramatically decreased Raman resonance band intensity of the Se–Se stretching mode at 259 cm^?1 due to the phase conversion and composition variation. Remarkably, the Cu_2?xSe columnar superstructures are employed as low‐cost and highly efficient counter electrodes (CEs) in quantum dot sensitized solar cells, exhibiting excellent electrocatalytic activity for polysulfide electrolyte regeneration. A ZnSe/CdSe cosensitized solar cell using the Cu_2?xSe CE shows a significant increase in fill factor and short‐current density (J_SC) and yields a 128% enhancement in power conversion efficiency as compared to the traditional noble metal Pt CE.     

Decoupling crystalline volume fraction and VOC in microcrystalline silicon pin solar cells by using a µc‐Si:F:H intrinsic layer

Microcrystalline silicon thin film pin solar cells with a highly crystallized intrinsic μc‐Si:F:H absorber were prepared by RF‐plasma enhanced chemical vapour deposition using SiF₄ as the gas precursor. The cells were produced with a vacuum break between the doped layer and intrinsic layer depositions, and the effect of different subsequent interface treatment processes was studied. The use of an intrinsic μc‐Si:H p/i buffer layer before the first air break increased the short circuit current density from 22.3 mA/cm² to 24.7 mA/cm². However, the use of a hydrogen‐plasma treatment after both air breaks without an interface buffer layer improved both the open circuit voltage and the fill factor. Although the material used for the absorber layer showed a very high crystalline fraction and thus an increased spectral response at long wavelengths, an open‐circuit voltage (V_OC) of 0.523 V was nevertheless observed. Such a value of V_OC is higher than is typically obtained in devices that employ a highly crystallized absorber as reported in the literature (see abstract figure). Using a hydrogen‐plasma treatment, a single junction μc‐Si:F:H pin solar cell with an efficiency of 8.3% was achieved.

     

Assessment of the illumination dependency of Al2O3 and SiO2 rear‐passivated p‐type silicon solar cells

This Letter discusses an important difference between positively charged SiO₂ and negatively charged Al₂O₃ rear‐passivated p‐type Si solar cells: their illumination level dependency. For positively charged SiO₂ rear‐passivated p‐type Si solar cells, a loss in short circuit current (J_SC) and open circuit voltage (V_OC) as a function of illumination level is mainly caused by parasitic shunting and a decrease in surface recombination, respectively. Hence, the relative loss in cell conversion efficiency, J_SC, and V_OC as a function of the illumination level for SiO₂ compared to Al₂O₃ rear‐passivated p‐type Si solar cells has been measured and discussed. Subsequently, an exponential decay fit of the loss in cell efficiency is applied in order to estimate the difference in the energy output for both cell types in three different territories: Belgium (EU), Seattle and Austin (US). The observed trends in the difference in energy output between both cells, as a function of time of the year and region, are as expected and discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of rapid thermal oxidation on structure and photoelectronic properties of silicon oxide in monocrystalline silicon solar cells

This paper concerns the topic of surface passivation properties of rapid thermal oxidation on p-type monocrystalline silicon wafer for use in screen-printed silicon solar cells. It shows that inline thermal oxidation is a very promising alternative to the use of conventional batch type quartz tube furnaces for the surface passivation of industrial phosphorus-diffused emitters. Five minutes was the most favorable holding time for the rapid thermal oxidation growth of the solar cell sample, in which the average carrier lifetime was increased 19.4 μs. The Fourier transform infrared spectrum of the rapid thermal oxidation sample, whose structure was Al/Al-BSF/p-type Si/n-type SiP/SiO₂/SiN_x/Ag solar cell with an active area of 15.6 cm², contained an absorption peak at 1085 cm⁻¹, which was associated with the Si–O bonds in silicon oxide. The lowest average reflectance of this sample is 0.87%. Furthermore, for this sample, its average of internal quantum efficiency and conversion efficiency are respectively increased by 8% and 0.23%, compared with the sample without rapid thermal oxidation processing.