Multilayer optics for XUV spectral region: technology fabrication and applications

We present research investigations in the field of multilayer optics in X-ray and extreme ultra-violet ranges (XUV), aimed at the development of optical elements for applications in experiments in physics and in scientific instrumentation. We discuss normal incidence multilayer optics in the spectral region of “water window”, multilayer optics for collimation and focusing of hard X-ray, multilayer dispersing elements for X-ray spectroscopy of high-temperature plasma, multilayer dispersing elements for analysis of low Z-elements. Our research pays special attention to optimization of multilayer optics for projection EUV-lithography (ψ-13nm) and short period multilayer optics.     

Systems of orthogonal polynomials defined by hypergeometric type equations with application to quantum mechanics

A hypergeometric type equation satisfying certain conditions defines either a finite or an infinite system of orthogonal polynomials. We present in a unified and explicit way all these systems of orthogonal polynomials, the associated special functions and the corresponding raising/lowering operators. The equations considered are directly related to some Schrödinger type equations (Pöschl-Teller, Scarf, Morse, etc), and the special functions defined are related to the corresponding bound-state eigenfunctions.     

The 1/D expansion for classical magnets: Low-dimensional models with magnetic field

The field-dependent magnetizationm(H, T) of one- and two-dimensional classical magnets described by theD-component vector model is calculated analytically in the whole range of temperature and magnetic fields with the help of the 1/D expansion. In the first order in 1/D the theory reproduces with a good accuracy the temperature dependence of the zero-field susceptibility of antiferromagnets with maximum atT|J ₀|/D (J ₀ is the Fourier component of the exchange interaction) and describes for the first time the singular behavior of (H, T) at small temperatures and magnetic fields: lim _T0 lim _H0 (H, T)=1/(2|J ₀|)(1–1/D) and lim _H0 lim _T0 (H, T)=1/(2|J ₀|).     

The 1/D expansion for low-dimensional classical magnets

The physical characteristics of two-dimensional classical ferro- and antiferro-magnets have been calculated in the whole temperature range by an analytical approach based on the expansion in powers of 1/D, whereD is the number of spin components. This approach works rather well since it yields exact results for antiferromagnetic susceptibility and specific heat atT=0 already in the first order in 1/D and it is consistent with HTSE at high temperatures. For the quantities singular atT=0, such as ferromagnetic susceptibility and correlation length, the 1/D expansion supports their general-D functional form in the low-temperature range obtained by Fukugita and Oyanagi. The critical index calculated in the first order in 1/D proves to be temperature dependent: =20/(D) (=T/T _c ^(MFT) ,T _c ^(MFT) =J ₀/D, J ₀ is the zero Fourier component of the exchange interaction).     

含δ势垒的铁磁/半导体/铁磁异质结中的自旋输运和渡越时间

研究了含δ势垒的铁磁/半导体/铁磁异质结中自旋相关的透射概率和渡越时间,讨论了量子尺寸效应和Rashba自旋轨道耦合效应对隧穿特性的影响.研究结果表明：δ势垒的存在降低了自旋电子的透射概率,改变了透射概率的位相.Rashba自旋轨道耦合强度的增加加大了透射概率的振荡频率.不同自旋取向的电子隧穿异质结时,渡越时间随着半导体长度、Rashba自旋轨道耦合强度以及两铁磁电极中的磁化方向的夹角的变化而变化. 关键词： δ势垒')" href="#">δ势垒 铁磁/半导体/铁磁异质结 Rashba自旋轨道耦合效应 渡越时间     

PbS红外探测器低频噪声物理模型及缺陷表征研究

为了表征PbS薄膜光导红外探测器的材料缺陷,详细推导了1/f和产生-复合(g-r)噪声物理模型,并由实验数据验证了模型的准确性. 利用1/f噪声与表面缺陷关系,计算了不同偏压下表面陷阱密度. 得到该值随偏压升高而增加,由此得出1/f噪声与所加偏压成正比变化,与实验测试结果相一致. 在此模型基础上,研究了g-r噪声与深能级缺陷特征参量的关系,提出由低频噪声表征缺陷激活能、简并因子、俘获截面等缺陷参数的方法. 关键词： 红外探测器 1/f噪声')" href="#">1/f噪声 噪声')" href="#">g-r噪声 缺陷     

金属氧化物半导体场效应管热载流子退化的1/fγ噪声相关性研究

研究了金属氧化物半导体(MOS)器件在高、中、低三种栅压应力下的热载流子退化效应及其1/f^γ噪声特性.基于Si/SiO₂界面缺陷氧化层陷阱和界面陷阱的形成理论,结合MOS器件1/f噪声产生机制,并用双声子发射模型模拟了栅氧化层缺陷波函数与器件沟道自由载流子波函数及其相互作用产生能级跃迁、交换载流子的具体过程.建立了热载流子效应、材料缺陷与电参量、噪声之间的统一物理模型.还提出了用噪声参数Sf ^{关键词： 金属氧化物半导体场效应管 热载流子 fγ噪声')" href="#">1/fγ噪声}     

Sensitivity enhancement of the central-transition signal of half-integer spin quadrupolar nuclei in solid-state NMR: features of multiple fast amplitude-modulated pulse transfer

Sensitivity enhancement of solid-state NMR spectrum of half-integer spin quadrupolar nuclei under both magic-angle spinning (MAS) and static cases has been demonstrated by transferring polarisation associated with satellite transitions to the central m=-1/2-->1/2 transition with suitably modulated radio-frequency pulse schemes. It has been shown that after the application of such enhancement schemes, there still remains polarisation in the satellite transitions that can be transferred to the central transition. This polarisation is available without having to wait for the spin system to return to thermal equilibrium. We demonstrate here the additional sensitivity enhancement obtained by making use of this remaining polarisation with fast amplitude-modulated (FAM) pulse schemes under both MAS and static conditions on a spin-3/2 and a spin-5/2 system. Considerable signal enhancement is obtained with the application of the multiple FAM sequence, denoted as m-FAM. We also report here some of the salient features of these multiple FAM sequences with respect to the nutation frequency of the pulses and the spinning frequency.     

金属/多孔硅/单晶硅(M/PS/Si)微结构的电学特性

采用双槽电化学腐蚀法制备多孔硅层,然后在多孔硅表面沉积形成金属电极,制备出M/PS/Si微结构.利用SEM分析多孔硅的表面形貌,通过测试其I-V特性分析M/PS/Si微结构的电学特性.结果表明:由Pt做电极形成的M/PS/Si结构,表现出非整流特性.M/PS/Si结构的I-V曲线由线性区和非线性区组成,多孔硅孔隙率越高的M/PS/Si结构的I-V特性曲线线性区越宽.由Cu做电极形成的M/PS/Si结构,表现出整流特性.其整流比随多孔硅孔隙率增加而减小. 关键词： M/PS/Si微结构 孔隙率 I-V特性')" href="#">I-V特性 欧姆接触     

高电荷态Ar~(17+)离子在表面以下过程中发射X射线分支比及各分支能量的研究

对低速高电荷态Ar17+离子在与不同金属靶相互作用过程中放出的Ar离子K壳X射线的Kβ/Kα分支比及各分支K线平均能量进行了理论研究.在文献[28,29]的基础上,通过对实验数据的分析,得到了0.3—0.8玻尔速度之间的Ar17+离子与Be,Al,Ni,Mo,Au等金属相互作用过程中入射离子发出的X射线分支比及各分支平均能量.理论上,基于导带电子俘获模型和级联跃迁模型,建立耦合方程组,以解释实验主要结果,理论结果与实验符合较好.在此基础上讨论了低速高电荷态Ar17+离子在金属表面以下的空心原子形成及退激发过程中发射K壳X射线的物理图像.     

Low energy scattering data and phase shifts

We point out that at any given low energyσ _tot and a ratio of integrated scattering data likeF/B can, in principle, be used unambiguously to finds-andp-wave phase shifts. Thus efforts to obtain other low energy data like elastic dσ/dΩ andP/E are unnecessary. It is also indicated that the mere knowledge whetherF/B is greater than or less than unity enables us to draw important conclusions about the nature of the interaction in thep-state without performing detailed calculations. Thus a strong case is made out for obtaining much more preciseF/B data than are presently available. The discussion refers mainly to low energy ∧p scattering data.     

Search of hydrogen transition states on α-Fe: The monomer adapted to first principles calculations

In the context of the density functional theory (DFT), we use the ab-initio electronic structure code, SIESTA, coupled to an economic technique to find activated states (or migration barriers), in order to study atomic defects diffusion through the crystal lattice: The monomer method [V.P. Ramunni, M.A. Alurralde, R.C. Pasianot, Phys. Rev. B 74 (2006) 054113]. We test our technique calculating the activated transition states of interstitial hydrogen (H) between two sites of high symmetry, tetrahedral and octahedral, in the α and β phases of Fe. The results are discussed in the context of experimental data and other available models.     

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.     

Explicit solutions of nonlinear wave equation systems

We apply the (G’/G)-expansion method to solve two systems of nonlinear differential equations and construct traveling wave solutions expressed in terms of hyperbolic functions, trigonometric functions, and rational functions with arbitrary parameters. We highlight the power of the (G’/G)-expansion method in providing generalized solitary wave solutions of different physical structures. It is shown that the (G’/G)-expansion method is very effective and provides a powerful mathematical tool to solve nonlinear differential equation systems in mathematical physics.     

The effect of electron irradiation on the optical properties of the natural armenian zeolite-clinoptilolite

Infrared (IR) absorption and luminescence in chemically and radiation-modified natural Armenian Zeolite (clinoptilolite) samples have been studied. The luminescence was studied in 390–450 nm and 620–710 nm wavelength bands, and the IR measurements were carried out in the 400–5400 cm⁻¹ range. It is shown that the luminescence intensity depends on the content of pure clinoptilolite in the samples and, probably on the distribution of “passive” luminescence centers over Si and Al sites that became “active” under radiation or chemical treatment. The samples of electron irradiated clinoptilolite have higher luminescence intensity than the chemically and thermally treated ones. A decrease in the intensity of IR absorption bands at 3550 cm⁻¹ and 3650 cm⁻¹ was found after irradiation.     

The phase transition in the discrete Gaussian chain with 1/r 2 interaction energy

We exhibit a phase transition from a rough high-temperature phase to a rigid (localized) low-temperature phase in the discrete Gaussian chain with 1/r ² interaction energy. This transition is related to a localization transition in the ground state for a quantum mechanical particle in a one-dimensional periodic potential, coupled to quantum 1/f noise.This paper is dedicated to J. L. Lebowitz on the occasion of his 60th birthday     

Study of deconfinement in NA50

TheJ/Ψ production in 158 A GeV Pb-Pb interactions is studied, in the dimuon decay channel, as a function of centrality, as measured with the electromagnetic or, alternatively, with the very forward hadronic calorimeters. After a first sharp variation at mid-centrality, both patterns continue to fall down and exhibit a curvature change at high centrality values. This trend excludes any conventional hadronic model and finds a natural explanation in a deconfined quark-gluon phase scenario. On leave of absence from York College CUNY On leave of absence of YerPhI, Yerevan, Armenia     

基于稀疏分解的大功率半导体激光器1/f噪声参数估计的新方法

本文结合1/f噪声信号功率谱随频率成反比变化的关系, 以及稀疏分解可以根据信号灵活构造原子库的特点, 提出一种基于稀疏分解估计大功率半导体激光器1/f噪声的新方法, 构造了具备1/f噪声特点的过完备库. 在该过完备库中通过Matching Pursuit(MP)算法完成了白噪声与1/f噪声混叠信号的稀疏分解. 实验结果显示:该方法估计出淹没在白噪声环境中1/f噪声的γ 参数, 与频谱分析仪的测量结果有较好的一致性, 通过对比不同的过完备库证明了所构造的过完备库的优越性.