Theoretical study of thermoelectric properties of MoS2

We systematically studied the thermoelectric properties of MoS2 with doping based on the Boltzmann transport theory and first-principles calculations. We obtained an optimal doping region(around 1019cm 3) for thermoelectric properties along in-plane and cross-plane directions. MoS2in the optimal doping region has a vanishingly small anisotropy of thermopower possibly due to the decoupling of in-plane and cross-plane conduction channels, but big anisotropies of electrical conductivity σ and electronic thermal conductivity κearising from the anisotropic electronic scattering time. The κeis comparable to the lattice counterpart κlin the plane, while κldominates over κeacross the plane. The figure of merit ZT can reach 0.1 at around 700 K with in-plane direction preferred by doping.     

Theoretical investigation of the thermoelectric transport properties of BaSi2

The full-potential linear augmented plane wave method based on density functional theory is employed to investigate the electronic structure of BaSi 2 . With the constant relaxation time and rigid band approximation,the electrical conductivity,Seebeck coefficient and figure of merit are calculated by using Boltzmann transport theory,further evaluated as a function of carrier concentration. We find that the Seebeck coefficient is more anisotropic than electrical conductivity. The figure of merit of BaSi 2 is predicted to be quite high at room temperature,implying that optimal doping may be an effective way to improve thermoelectric properties.     

Theoretical investigation on the electronic and thermoelectric properties of RuSb2Te compound

The skutterudites are an excellent candidate for thermoelectric materials used in mechanic free heat pump and electric generator. Using the ab initio density functional theory we have calculated the electronic band structure and thermoelectric properties of skutterudite RuSb₂Te. RuSb₂Te compound belongs to an indirect band gap semiconductor. The density of states has a sharp upturn at the conduction band edge and is very low at the valence band top. This feature suggests that Seebeck coefficient is larger for n doped than for p doped RuSb₂Te compound. The calculated Seebeck coefficient confirms this trend. It is in a qualitative agreement with the experiments if the temperature is not too high.     

Structure and electronic properties of MoS2 nanotubes

Structural and electronic properties as well as the stability of MoS2 nanotubes are studied using the density-functional-based tight-binding method. It is found that MoS2 zigzag ( n,0) nanotubes exhibit a narrow direct band gap and MoS2 armchair ( n,n) possess a nonzero moderate direct gap. Interestingly, the ( n,n) tubes show a small indirect gap similar to the direct gap of ( n,0) nanotubes. Simulated electron diffraction patterns confirm the existence of armchair and zigzag disulphide nanotubes. The structure of the MoS2 nanotube tips is explained by introducing topological defects which produce positive and negative curvature.     

Homogeneity domain and thermoelectric properties of CrSi2

The phase composition, structure, and thermoelectric properties of CrSi₂ obtained by low-temperature synthesis are investigated. The results indicate the strong effect of the silicon sublattice on the thermoelectric properties of the material and the possibility of solid-phase low-temperature transformations in a CrSi₂ crystal lattice.     

Electronic properties of MoS2 nanoribbons with disorder effects

A theoretical study of electronic properties on MoS₂ nanoribbon is made on focusing the calculation of zero bias transport in the presence of disorders. Disorders including intrinsic and extrinsic vacancies and also weak uniform scatter defects are considered. The calculations are based on the tight-binding Green's function formalism by including an iterative procedure. The Slater–Koster transformations are used to determine the parameters. This model reduces the numerical calculation time. The unsaturated atoms at the edge of armchair (zigzag) ribbon induce some mid-gap states with nearly high (low) localization, which act as scattering centers. The antiresonances of created quasi-localized states due to vacancy cause the conductance of the armchair nanoribbon to decrease. Finally, the zigzag ribbon provides the highest sensitivity as well as selectivity between the smaller energy range, in the presence of the single weak scatter with potential value of 2 eV at the edge of the ribbon.     

Anisotropic thermoelectric transport properties in polycrystalline SnSe_2

It is reported that SnSe_2 consisting of the same elements as SnSe, is a new promising thermoelectric material with advantageous layered structure. In this work, the thermoelectric performance of polycrystalline SnSe_2 is improved through introducing SnSe phase and electron doping(Cl doped in Se sites). The anisotropic transport properties of SnSe_2 are investigated. A great reduction of the thermal conductivity is achieved in SnSe_2 through introducing SnSe phase, which mainly results from the strong SnSe_2–SnSe inter-phase scattering. Then the carrier concentration is optimized via Cl doping, leading to a great enhancement of the electrical transport properties, thus an extraordinary power factor of ～5.12 μW·cm~(-1)·K~(-2) is achieved along the direction parallel to the spark plasma sintering(SPS) pressure direction( P). Through the comprehensive consideration on the anisotropic thermoelectric transport properties, an enhanced figure of merit ZT is attained and reaches to ～ 0.6 at 773 K in SnSe_2-2% SnSe after 5% Cl doping along the P direction, which is much higher than ～ 0.13 and ～ 0.09 obtained in SnSe_2-2% SnSe and pristine SnSe_2 samples, respectively.     

单层MoS_2表面吸附Ag_6团簇电子结构的第一性原理计算

本文运用第一性原理研究了单层MoS_2在S位吸附Ag_6团簇的稳定性、能带结构和态密度.结果表明,Ag_6团簇在S位单点位吸附的稳定性强于双点位吸附、三点位吸附;其中吸附体系禁带中产生了2条杂质能级,原因在于Ag原子与S形成共价键下的施主能级与受主能级;Ag_6团簇在单层MoS_2的吸附导致态密度峰值在费米能级处发生劈裂,说明Ag_6团簇的吸附会增强单层MoS_2的光电特性;单层MoS_2的能带结构可以通过表面吸附Ag_6团簇以及金属团簇进行调控;在实际的生产应用中依据不同的金属团簇吸附于单层MoS_2表面得到需要的的半导体器件.     

Synthesis and thermoelectric properties of YbSb2Te4

The study of the ternary phase diagram Yb–Sb–Te has led to the synthesis of YbSb₂Te₄ as a pure phase by way of high energy ball milling followed by annealing, whereas typical high temperature powder metallurgy leads to multiphase sample with impurities of the very stable YbTe. The Hall mobility, Seebeck coefficient, electrical resistivity and thermal conductivity of the layered compound YbSb₂Te₄ were measured in the range of 20–550 °C. The thermoelectric figure of merit peaks at 525 K and reaches 0.5. Of particular interest is the very low lattice thermal conductivity (as low as a glass) which makes YbSb₂Te₄ and related compounds promising thermoelectric materials. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

First-principles investigation of the thermodynamic properties of two-dimensional MoS2

Density-functional perturbation theory has been applied to investigate the thermodynamic properties of two-dimensional MoS₂ within the Perdew-Burke-Ernzerhof genealized gradient approximation (PBE-GGA). The Murnaghan’s isothermal equation of state has been derived for the monolayer, giving how the pressure and the total energy of the monolayer evolve versus the volume of the unit cell. The temperature-dependent behavior of some thermodynamic quantities, including the Helmholtz free energy, total energy, Debye temperature, mean square displacements, specific heat, entropy and number of microstates, have been determined as well as their functional forms within the quasi-harmonic approximation, by calculating the partial phonon density of states as a fundamental quantity. The value of 45.6 cm${}^{?1}$ has been found for the phonon band gap in the frequency range, separating the acoustic and the optical phonon bands in fair agreement with the literature. The results broadly support the view that the validity of the Debye T³-law for low-temperature specific heat of solids is violated for the case of two-dimensional MoS₂ and therefore, a T²-law is proposed, accurately describing the behavior of the isochoric specific heat from 0 to 60 K.     

拓扑相MoS2电子结构及光学性质的第一性原理研究

基于密度泛函理论的第一性原理对二维拓扑相1T′-MoS₂和2M-MoS₂的电子结构、有效质量和光学性质进行研究,并将其与二维H-MoS₂进行对比分析.研究表明,电子有效质量大小关系为：2M-MoS₂22,空穴有效质量大小关系为：T′-MoS₂<2M-MoS₂2,但2M-MoS₂的空穴有效质量和T′-MoS₂相差不大,二者均适用于高性能电子器件.由于拓扑相1T′-MoS₂和2M-MoS₂均存在能带反转,导致带间相关性以及导带和价带的波函数重叠增强,进而光电流响应增强,二者的光学性质均优于H-MoS₂. 2M-MoS₂具有较大的吸收系数和光电导率,2M-MoS₂对红外光和紫外光有着优...     

V掺杂二维MoS_2体系气体吸附性能的第一性原理研究

以芥子气和沙林为代表的毒剂具有毒性强、扩散快的特点,是一类杀伤力强、难以防护的化学战剂,对其快速高效检测是一项具有挑战性的课题.本文基于第一性原理计算方法研究了V掺杂对二维MoS_2气敏性能影响的机理,发现V原子向二维MoS_2的掺杂过程为自发的放热反应, V原子可以稳定掺杂于二维MoS_2超胞结构中的S空位上.掺杂进入二维MoS_2体系的V原子作为施主中心向周围Mo原子给出电子,从而提高了材料的导电能力.吸附能、吸附距离和吸附过程中的电子转移计算结果表明V的掺杂提高了二维MoS_2对气体分子的吸附能力,增强了吸附质分子与基底表面的电子相互作用,从而提高了二维MoS_2的气敏性能.     

Co对单层MoS_2电子结构与磁性的影响

为了研究Co对单层MoS_2电子结构和磁性的影响,本文基于第一性原理,采用数值基组的方法计算了Co吸附式掺杂、Co替代式掺杂单层MoS_2的能带结构、态密度以及分析了其结构的稳定性.结果发现:Co替换式掺杂体系的形成能较低,实验上容易实现;Co在Mo位吸附的稳定性强于在S位吸附;Mo位吸附体系的总磁矩为0.999μB,其磁矩的主要来源于Co原子的吸附所贡献的0.984μB,Co原子的掺杂体系总磁矩为1.029μB,其磁矩的主要由Co原子替代掉一个Mo原子所贡献的磁矩为0.9444μB,相比于吸附体系,Co原子对磁矩的贡献率有所降低;无论是Co吸附在单层MoS_2表面还是Co直接替代掉Mo原子的掺杂体系,Co原子3d轨道的引入是引起单层MoS_2体系磁性的主要原因.     

Variability of electrical contact properties in multilayer MoS2 thin-film transistors

We report the variability of electrical properties of Ti contacts in back-gated multilayer MoS₂ thin-film transistors based on mechanically exfoliated flakes. By measuring current–voltage characteristics from room temperature to 240 °C, we demonstrate the formation of both ohmic and Schottky contacts at the Ti–MoS₂ junctions of MoS₂ transistors fabricated using identical electrode materials under the same conditions. While MoS₂ transistors with ohmic contacts exhibit a typical signature of band transport, those with Schottky contacts indicate thermally activated transport behavior for the given temperature range. These results provide the experimental evidence of the variability of Ti metal contacts on MoS₂, highlighting the importance of understanding the variability of electronic properties of naturally occurring MoS₂ for further investigation.     

First-principle study on the structural and electronic properties of H2S and SO2 adsorption on Pd-doped MoS2 monolayer

The partial discharge in SF₆-insulated equipment produces characteristic decomposition products: SO₂ and H₂S. The characteristic decomposition products vastly speed up the process of discharge faults. Based on density functional theory (DFT) calculation, single layer Pd-doped MoS₂ (Pd-MoS₂) is adopted as the adsorbent to adsorb SO₂ and H₂S to ensure the operational stability of SF₆-insulated equipment. The adsorption energy, charge transfer and structure parameters of SF₆, H₂S, and SO₂ adsorption on the Pd-MoS₂ monolayer are analysed to find the most stable adsorption structure. The molecular orbital theory, total density of states and partial density of states are studied to analyse the adsorption mechanism. The results show that Pd-MoS₂ adsorbent possesses high catalytic activity and excellent adsorption performance to H₂S and SO₂ by strong chemical adsorption. This study is of great significance to ensure the operational stability of SF6-insulated equipment by removing these characteristic decomposition products.     

Electronic and magnetic properties of 3d-metal trioxides superhalogen cluster-doped monolayer MoS2: A first-principles study

Utilizing first-principle calculations, the structural, electronic, and magnetic properties of monolayer MoS₂ doped with 3d transition-metal (TM) atoms and 3d-metal trioxides (TMO₃) superhalogen clusters are investigated. 3d-metal TMO₃ superhalogen cluster-doped monolayers MoS₂ almost have negative formation energies except CoO₃ and NiO₃ doped monolayer MoS₂, which are much lower than those of 3d TM-doped structures. 3d-metal TMO₃ superhalogen clusters are more easily embedded in monolayer MoS₂ than 3d-metal atoms. MnO₃, FeO₃, CoO₃, and NiO₃ incorporated into monolayer MoS₂ are magnetic, and the total magnetic moments are approximately 1.0, 2.0, 3.0, and 4.0 μB per supercell, respectively. MnO₃ and FeO₃ incorporated into monolayer MoS₂ become semiconductors, whereas CoO₃ and NiO₃ incorporated into monolayer MoS₂ become half-metallic. Our studies demonstrate that the half-metallic ferromagnetic nature of 3d-metal TMO₃ superhalogen clusters-doped monolayer MoS₂ has a great potential for MoS₂-based spintronic device applications.