共查询到18条相似文献,搜索用时 156 毫秒
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多原子半无限晶体中表面极化子的内部激发态 总被引:1,自引:1,他引:0
研究多原子半无限晶体中电子与表面光学(SO)声子耦合强,而与体纵光学(LO)声子耦合弱的极化子的激发态性质.采用线性组合算符和幺正变换方法导出与SO声子耦合强而与LO声子耦合弱情形下极化子的基态能量、第一内部激发态能量和激发能量.结果表明,多原子半无限晶体中与SO声子耦合强,而与LO声子耦合弱的极化子的基态能量、第一内部激发态能量不仅包含不同支LO声子和不同支SO声子与电子耦合的能量,而且也包含不同支SO声子之间相互作用贡献的附加能量.激发能量与体纵光学声子无关. 相似文献
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本文在Wendler、潘金声研究双层极性晶体时得出的声子振动极化场所满足的微分、积分方程及归一化条件的基础上,讨论周期性排列的层状极性晶体中声子振动极化场所满足的微分、积分方程,得到了SO声子的色散关系,SO声子和LO声子极化强度矢量.用声子产生、湮灭算符表出了声子振动能量及电子—声子的相互作用哈密顿量. 相似文献
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强耦合表面极化子的激发能量 总被引:4,自引:2,他引:2
采用线性组合算符方法及幺正变换方法研究了电子与表面光学(SO)声子和体纵光学(LO)声子均为强耦合的表面极化子的激发态性质.计算了体系的有效哈密顿量、振动频率和体系由基态向第一激发态跃迁所需的激发能量. 相似文献
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抛物量子点中弱耦合束缚极化子的相互作用能 总被引:8,自引:8,他引:0
研究了抛物量子点中弱耦合束缚极化子的性质,采用改进的线性组合算符和幺正变换方法导出了束缚极化子的振动频率、有效质量和相互作用能。讨论了量子点的有效受限长度、电子LO声子耦合强度和库仑场对抛物量子点中弱耦合极化子的振动频率、有效质量和相互作用能的影响。数值计算结果表明:弱耦合束缚极化子的振动频率和相互作用能随有效受限长度的减少而急剧增大,振动频率随库仑势以及电子LO声子耦合强度的增加而增加,而相互作用能随库仑势以及电子LO声子耦合强度的增加而减小。有效质量仅与电子LO声子耦合强度有关。 相似文献
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采用格林函数的方法,研究极性晶体膜中束缚极化子的有效质量随膜厚d的变化关系。得出电子-体LO声子相互作用以及电子-SO声子相互作用都对束缚极化子的有效质量有贡献。通过对KCl半导体膜的数值计算表明,束缚极化子的有效质量随膜厚d的增加而减少;当膜厚小于5 nm时电子-SO声子相互作用对束缚极化子的有效质量起主要贡献,但是当膜厚大于10 nm时,电子-体LO声子相互作用对束缚极化子的有效质量起主要贡献,当膜厚大于5 nm而小于10 nm时,二者共同影响束缚极化子的有效质量;另外,由于束缚势的存在,使束缚极化子的有效质量增大,这主要是由于束缚势的存在,使电子-声子间的相互作用增强,极化子效应增大而引起的。 相似文献
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研究半无限晶体中表面极化子的特性,采用L.L.P方法导出了表面极化子的有效哈密顿量、有效质量和声子之间相互作用的能量,讨论了电子在反冲效应中发射和吸收不同波矢声子之间相互作用对表面极化子性质的影响。 相似文献
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声子之间相互作用对磁场中表面极化子的诱生势的影响 总被引:6,自引:3,他引:3
研究极性晶体中电子与表面光学(SO)声子和体纵光学(BO)声子耦合弱的表面磁极化子的性质,采用线性组合算符和微扰法导出了极性晶体中表面磁极化子的有效哈密顿量。讨论了反冲效应中不同波矢声子之间相互作用对表面磁极化子诱生势的影响。 相似文献
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We have presented a theoretical study on electron resonant Raman scattering (ERRS) process associated with the bulk longitudinal optical (LO), surface optical (SO) and quasi-confined (QC) phonon modes in a free-standing wurtzite nanowire (NW). We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum model. Numerical calculations on the GaN material reveal that differential cross-section (DCS) is sensitive to the wire size. The bulk LO and high-frequency quasi-confined (QC+) phonons make main contributions to the DCS and the impact of the SO phonon can be negligible in the ERRS process. Moreover, scattering intensity of the bulk LO phonon is strongly enhanced as the incident photon energy approaches the energy band-gap of the GaN. 相似文献
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We have investigated one phonon resonant Raman scattering in GaN nanowires (NWs) with ring geometry. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. The selection rules are studied. For the GaN NWs with small radius, results reveal that the main contribution to the differential cross-section (DCS) stems from the surface optical (SO) phonons especially from the high-frequency of SO phonons, with a minor contribution from the longitudinal optical (LO) phonons. Meanwhile, dispersions of the two branches of the SO phonon modes are obvious when the wire is thin. Moreover, compared to GaAs NWs, the GaN NWs make more contribution to the DCS in the small quantum size. 相似文献
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The optical phonon modes and electron–optical-phonon interaction in fan-shaped quantum dot and quantum wire are studied with the dielectric continuum (DC) model and separation of variables. The explicit expressions for the longitudinal optical (LO) and interface optical (IO) phonon eigenmodes are deduced. It is found that there exist two types of IO phonon modes: top interface optical (TIO) phonon mode and arc interface optical (AIO) phonon mode, in a fan-shaped quantum dot. After having quantized the eigenmodes, we derive the Hamiltonian operators describing the LO and IO phonon modes as well as the corresponding Fröhlich electron–phonon interaction. The potential applications of these results are also discussed. 相似文献
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Taking into account the interactions of both bulk longitudinal optical (LO) pltonons and surface optical (SO) pltonons and using Haga's perturbatioit method, we derive an effective Hamiltonian for the interface magnetopolaron in polar crystals at zero temperature. We illustrate in details how to solve this effective Hamiltonian analytically and we obtain explicit formulae not on1y for the electron cyclotron mass associated with the Landau levels but also for the self-trapping energy of the magnetopolaron with respect to its first three quantum states in the direction normal to the interface of the system. Numerical results are calculated for some Ⅱ-Ⅵ and Ⅲ-Ⅴ semiconductor compounds,indicting that the bulk LO phonons and SO phonons do have different trends of effects on the electron in different quantum states. 相似文献
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极性晶体中表面极化子的温度效应 总被引:5,自引:3,他引:2
有不少的极性晶体,电子与体纵光学声子的耦合弱,但与表面光学声予的耦合强.本文讨论电子和体纵光学声子耦合弱,与表面光学声子耦合强时对表面极化子的温度特性的影响,用线性组合算符法研究表面极化子的振动频率、诱生势和有效质量的温度依赖性.对AgBr晶体进行了数值计算,结果表明极化子的振动频率,诱生势和有效质量随温度的升高而减小. 相似文献
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Zheng-Wei ZuoHong-Jing Xie 《Superlattices and Microstructures》2011,50(1):50-58
Within the framework of the dielectric continuum (DC) model, the optical phonon modes and electron-optical-phonon interaction in hemispherical quantum dot are investigated. The proper eigenfunctions for longitudinal optical (LO) and interface optical (IO) phonon modes are constructed. After having quantized the eigenmodes, we derive the Hamiltonian operators describing the LO and IO phonon modes as well as the corresponding Fröhlich electron-phonon interaction. The dispersion relation of IO phonon modes is size independent. The potential applications of these results are also discussed. 相似文献
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Hsu-Cheng Hsu 《Solid State Communications》2004,131(6):371-375
The coupling strength of the radiative transition of hexagonal ZnO nanowires to the longitudinal optic (LO) phonon polarization field is deduced from temperature dependent photoluminescence spectra. An excitonic polaron formation is discussed to explain why the interaction of free excitons with LO phonons in ZnO nanowires is much stronger than that of bound excitons with LO phonons. The strong exciton-phonon coupling in ZnO nanowires affects not only the Haung-Ray S factor but also the FXA-1LO phonon energy spacing, which can be explained by the excitonic polaron formation. 相似文献