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M. S. Elmanharawy 《Czechoslovak Journal of Physics》1977,27(7):822-828
The doping of (ZnSCdSAgNi) phosphors with cobalt impurity results in new phosphors with thermoluminescence curves showing five distinct peaks. Four of these peaks are associated with chlorine, cadmium, cobalt and nickel impurities and have energy depths of 0·26 eV, 0·52 eV, 0·53 eV and 0·78 eV respectively. The fifth peak, appearing at high cobalt concentrations, has an energy depth of 1·09 eV and is attributed to the formation of (Co++ - Ag–) associates. The emitted thermoluminescence consists of two bands: one in the yellow and the other in the red spectral region. The yellow band subsumes the chlorine, cadmium and cobalt peaks and is due to recombination processes occurring through silver centres. The red band, on the other hand, includes the nickel and the (Co++-Ag–) peaks. The appearance of the nickel peak in the red band is explained by recombination processes at energy levels created by the nickel impurity centres. 相似文献
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分别测量了 Er∶ YCOB晶体和 Er∶Yb∶YCOB晶体的室温吸收光谱。讨论了 Yb3 +离子对 Er3 +离子的敏化作用 相似文献
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Transmission electron microscopy and diffraction investigations have been conducted on (ZnSCdSAgNiCo) phosphors. The phosphors decomposed under electron bombardment according to a suggested mechanism in which the creation of metallic ion vacancies led to the formation of cavities and voids. Sulphur atoms, resulting from the transformation of sulphur ions by secondary electron emission, acquired energy from the electron beam and penetrated the walls of the voids under the effect of relaxation. The voids migrated to the crystal faces under the combined effect of temperature and electric potential gradients set up by the electron beam. The final decomposition product consisted of colloidal zinc and cadmium which were accompanied by the release of sulphur. The decomposition rate increased with increase in cobalt content of the phosphor due to a corresponding increase in the concentration of defects. The catastrophic decomposition occurring at high beam intensities has been attributed to a highly localized temperature rise in certain regions of the irradiated crystals. 相似文献
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在同成分LiNbO3中,掺入ZnO的摩尔分数分别为1%、3%、5%、7%和9%,掺入(质量分数)0.03% MnCO3和0.08%Fe2O3,采用提拉法生长了优质Zn∶Mn∶Fe∶LiNbO3晶体.测试Zn∶Mn∶Fe∶LiNbO3晶体的OH-红外吸收光谱,抗光损伤能力和位相共轭性能.Zn离子浓度在7%和9%时,OH-吸收峰移到3 528 cm-1,讨论OH-吸收峰移动机理.随着Zn离子浓度增加,抗光损伤能力增加.Zn离子浓度增加到7%,达到阈值.Zn∶Mn∶Fe∶LiNbO3晶体抗光损伤能力比LiNbO3晶体高二个数量级,研究高掺锌Mn∶Fe∶LiNbO3晶体抗光损伤增强机理.随着Zn离子浓度增加,Zn∶Mn∶Fe∶LiNbO3晶体位相共轭反射率降低,位相共轭响应速度增加.Zn∶Mn∶Fe∶LiNbO3晶体位相共轭镜消除了光波的位相畸变.以Zn∶Mn∶Fe∶LiNbO3晶体作存储介质进行全息关联存储实验.讨论全息关联存储的工作原理.以原图象的25%和50%进行寻址,在输出平面上接收到较完整的存储图象. 相似文献
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NaCl Cd [10]. , NaCl Ni , .
Absorption and dispersion on NaCl Ni crystals
The results of measuring the absorption and dispersion of light on NaCl Cd crystals were compared with the X-ray diffraction measurements by Toman [10]. The comparison showed that under certain conditions micro-regions of segregated impurities are produced in NaCl Ni crystals, apparent in an increased dispersion of light in the ultra-violet region.相似文献
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以提拉法生长Zn(1mol% )∶Fe∶LiNbO3,Zn(4mol % )∶Fe∶LiNbO3,Zn(7mol% )∶Fe∶LiNbO3晶体 Zn∶Fe∶LiNbO3晶体随着Zn2 + 浓度的增加 ,抗光致散射能力增加 ,Zn(7mol% )∶Fe∶LiNbO3晶体抗光致散射能力比Fe∶LiNbO3晶体提高两个数量级以上 测试了Zn∶Fe∶LiNbO3晶体衍射效率、响应时间 以Zn(7mol % )∶Fe∶LiNbO3晶体作为存储元件 ,Zn(4mol% )∶Fe∶LiNbO3晶体作为位相共轭镜 ,进行全息关联存储试验 试验结果显示出成像质量好、图像清晰完整、噪音小等优点 研究了Zn∶Fe∶LiNbO3晶体全息存储性能增强的机理 Zn(4mol% )∶Fe∶LiNbO3晶体具有全息存储性能最佳的综合指标 相似文献
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在LiNbO3 中掺进In2O3 和Nd2O3,以Czochralski技术生长了In∶Nd∶LiNO3 晶体通过光斑畸变法测得In∶Nd∶LiNbO3晶体的光损伤阈值为1. 98×104W /cm2,比Nd∶LiNbO3晶体的1. 6×102W /cm2高两个数量级以上;晶体吸收光谱的测试表明,In∶Nd∶LiNbO3 晶体的吸收边相对Nd∶LiNbO3 晶体发生紫移研究了In∶Nd∶LiNbO3 晶体的倍频性能,结果表明,In∶Nd∶LiNbO3 晶体的相位匹配温度在室温附近,倍频转换效率比Nd∶LiNbO晶体提高二倍. 相似文献