Ni-Mo-B非晶态合金纳米颗粒的抗氧化性能研究

在水溶液体系中用化学还原法制备Ni-B和Ni-Mo-B非晶态合金纳米颗粒.SEM测试表明,样品的颗粒形貌呈球形或类球形,平均粒径约10nm.XPS分析结果表明,Ni-Mo-B非晶态合金中钼元素主要以氧化态形成于合金的表面,并导致合金表面合金化硼原子浓度显著增加,氧化态硼（B3＋）的原子浓度显著减少,氧的原子浓度明显减少,合金化镍的原子浓度显著增加,氧化态镍（Ni3＋）的原子浓度显著减少.因此,Ni-Mo-B合金的抗氧化性能显著高于Ni-B合金.XPS谱图分析还表明,在Ni-B和Ni-Mo-B非晶态合金中,存在Ni和B的合金化物Ni2B,其中B失去部分电子,而Ni则富余电子.Ni2B的氧化产生副产物Ni2O3和B2O3.     

WC-Co硬质合金稀土-硼共渗的高温动态相分析

用高温X射线衍射装置对以B4C为供硼剂、以Y2O3为催WC－20Co硬质合金渗硼表面进行了从室温到1300℃连续升温渗硼过程的XRD动态物相分析，探讨了稀土－硼共渗机制。结果表明，在真空烧结升温期间，从WC－Co压坯表面B4C分解出来的活性硼原子除在压坯表面上形成硼化物外，所形成的高浓度活性硼原子还向压坯内钴中扩散形成三元含硼相W2Co21B6化合物。同单独渗硼相比，钇在稀土－硼共渗过程中有拓宽渗硼温度范围、促进B4C脱碳分解和活性硼原子向压坯内扩散等催化渗硼作用。     

气氛对MnCr2O4尖晶石纳米线生长的影响

建立了一种在氮气和氢气的还原性混合气氛和1100 ℃条件下加热商业不锈钢箔(304)制备MnCr2O4尖晶石纳米线的简单方法, 并研究了不同气氛对纳米线生长的影响. 研究发现, 混合气体中氢气含量的变化会影响纳米线的形貌和产率; 而氧化性气氛(如空气)下则得不到纳米线. 在还原性气氛下, Mn和Cr原子可以和反应室内残留的痕量氧反应生成MnCr2O4尖晶石, 而Fe和Ni原子不能被氧化, 但是Fe和Ni可以起到催化纳米线生长的作用, 纳米线的生长机理属于自催化性的气-液-固(VLS)机制.     

包裹在碳纳米管内Cu-Fe合金纳米线偏聚结构及稳定性研究

采用分子动力学方法系统研究了包裹在刚性碳纳米管内的Cu-Fe二元合金纳米线经高温退火后的稳定结构.研究结果表明,所形成的合金纳米线具有圆柱形壳层结构且有明显的偏聚现象.其中Cu原子富集于靠近管壁的外层,而Fe原子则富集于靠近轴心的核层.偏聚程度与碳纳米管管径和合金组分显著相关,而与被包裹的金属原子数无明显相关性.管径越大,组分中Cu原子含量越高,则偏聚程度越显著.表明可通过调节合金中Cu原子含量获得最外壳层为纯Cu而内部为纯Fe或合金的"同心异质"结构纳米线.用平均原子势能对体系稳定性进行了描述,结果显示,碳纳米管管径越大,包裹在内的金属原子数目越多,Fe原子含量越高,体系稳定性越好.这种偏聚行为和稳定性随碳纳米管管径、合金组分及金属原子数的变化而变化,几乎不受碳纳米管长度和手性的影响.     

MgO负载Fe基催化剂选择性合成单/双/多壁碳纳米管

通过浸渍及水热处理获得MgO负载的Fe基催化剂,并将其用于化学气相沉积过程裂解甲烷获得碳纳米管.结果表明,单/双/多壁碳纳米管可选择性地生长在Fe负载量不同的Fe/MgO催化剂上.当Fe负载量仅为0.5%时,铁原子在载体表面烧结为0.8～1.2nm的铁颗粒,碳在这种小颗粒上以表面扩散为主,导致单壁碳纳米管形成,并且单壁碳纳米管的选择性高达90%.当Fe负载量提高到3%时,铁原子聚集成约2.0nm的颗粒,在化学气相沉积中生长碳纳米管时,碳在Fe催化剂颗粒中的体相扩散的贡献增大,在表相扩散和体相扩散的共同作用下,双壁碳纳米管的选择性显著增高.当进一步增加Fe负载量时,铁原子烧结形成1～8nm的颗粒,经过化学气相沉积,在催化剂上生长了单、双、多壁碳纳米管.随着Fe在MgO载体上负载量的增加,管径、管壁数以及半导体管的含量都增加.本研究提供了一种适合大批量选择性生长单/双/多壁碳纳米管的方法.     

聚苯胺纳米线/SnO2复合光催化材料的光化学制备与性能

将具有确定形态的聚苯胺(PANI)纳米线作为复合单元, 直接分散在SnSO₄和H₂SO₄的混合溶液中, 通 过紫外光照射获得PANI纳米线/SnO₂纳米颗粒复合材料. 对复合材料的形态和成分进行了分析, 发现二者 相互交织在一起且部分颗粒直接生长在纳米线上. 以罗丹明B溶液为目标降解污染物研究了复合材料在低 功率紫外灯下的光催化活性. 结果表明, PANI纳米线可以明显增强SnO₂的光催化活性, 且增强效果与光照 复合时间呈规律性变化, 在最优复合时间下复合材料的光催化活性是纯SnO₂的近3倍. 通过对能级结构与光催化反应过程的测试分析, 认为Z型异质结的形成促进了光生电子-空穴的分离, 进而增强了材料的光催化活性.     

一种新型包含平面四配位碳二硼有机化合物的理论研究

采用B3LYP/6-311+G**方法, 研究了一种新型的包含平面四配位碳(ptC)二硼有机化合物C9B2H6的结构、稳定性和振动频率. 计算结果表明, C9B2H6结构的稳定性和两个硼原子的位置有很大关系, 硼原子起给予σ电子和接受π电子的作用. 在C9B2H6的15个异构体中, 最稳定的结构是具有C2v对称性的异构体(1,5), 在异构体(1,5)中, 两个硼原子位于同一个六元环中且与ptC相邻. 而且占据的π轨道说明异构体(1,5)具有10个π电子, 满足4n+2规则. 计算的核独立化学位移(NICS)值显示异构体(1,5)强的芳香性位于C9B2H6的两个三元环而不是两个六元环上.     

硼碳团簇BnC2 (n＝1～6)的理论研究

应用密度泛函理论在B3LYP/6-311＋G(d)水平上研究了硼碳团簇B_nC₂ (n＝1～6)的几何结构、生长机制和相对稳定性. 计算结果表明, 对于n＝2～6的簇, 平面多环状构型为最稳定的结构, 其中C原子分布于环的顶点、有尽可能多的三配位硼原子和尽可能多的B—C键. 碳原子作为杂原子倾向掺杂于团簇的顶点位置, 它的掺杂不改变硼团簇的主体结构. 与平面多环状结构相比, 随着簇尺寸的增大, 三维结构和线性链结构更不稳定. 在低能线性结构中, C原子位于链两侧的第二个位置. 计算的碎片分裂能、递增键能以及HOMO-LUMO能隙表明, B₄C₂为幻数簇.     

SiCp/ Al复合材料与化学镀镍层结合机理研究

根据结构化学理论，用SEM, EDAX和XPS等测试手段研究了镀层和碳化硅颗粒增强铝基复合材料(SiC_p/ Al)的表面、断面形貌及界面的结合状态，分析了镀层和基体之间的结合机理。结果表明，Ni镀层与复合材料界面有良好的结合，在复合材料表面的SiC-Al界面，初期沉积物Ni按Al的晶格外延生长出现微晶层，然后吸附原子扩散迁移、碰撞结合并与界面上的SiC晶格匹配生长，在镍层中诱发了拉伸应力。镍晶格和基体粒子之间产生了键合作用，形成的键显示出共价键和离子键的混合性质。     

椅型碳纳米管吸附氧原子的密度泛函理论研究

利用密度泛函B3LYP对有限长扶手椅形单壁碳纳米管(3,3),(4,4)和(5,5)吸附O原子的几何结构、电子属性、反应能和红外光谱进行了系统地理论研究,获得了一些有意义的结果,主要包括如下4个方面:(1)2个O原子吸附在管外壁垂直于管轴的C—C键形成开环的轮烯结构,吸附在管内壁形成环氧结构;(2)O原子吸附在管外壁要比吸附在管内壁具有较大的能隙和吸附反应能;(3)与单壁碳纳米管管外壁吸附1个O原子相比,2个O原子吸附在管外壁具有较大的吸附反应能;(4)B3LYP得到的C—O伸缩振动频率与实验一致.     

The morphology of ceramic phases in BxC-SiC-Si infiltrated composites

The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B₄C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system.     

Electroless Deposition of Nickel Nanowire and Nanotube Arrays as Supports for Pt-Pd Catalyst for Ethanol Electrooxidation

Nickel nanowire and nanotube arrays as supports for Pt-Pd catalyst were prepared by electroless deposition with anodic aluminum oxide template. Pt-Pd composite catalyst was deposited on the arrays by displacement reaction. SEM images show that the nickel nanowires have an average diameter of 100 nm and the nickel nanotubes have an average inner diameter of 200 nm. EDS scanning reveals that elemental Pt and Pd disperse uniformly on the arrays. Cyclic voltammetry study indicates that the nickel nanotube array loaded with Pt-Pd possesses a higher electrochemical activity for ethanol oxidation than the nickel nanowire array with Pt-Pd.     

Dispersion-corrected DFT study on the carbon monoxide sensing by B<Subscript>2</Subscript>C nanotubes: effects of dopant and interferences

Electrical sensitivity of a boron carbon nanotube (B₂CNT) was examined toward carbon monoxide (CO) molecule by using dispersion-corrected density functional theory calculations. It was found that CO is weakly adsorbed on the tube, releasing energy of 3.5–4.1 kcal/mol, and electronic properties of the tube are not significantly changed. To overcome this problem, boron and carbon atoms of the tube were substituted by aluminum and silicon atoms, respectively. Although both Al and Si doping make the tube more reactive and sensitive to CO, Si doping seems to be a better strategy to manufacture CO chemical sensors due to the higher sensitivity without deformation of nanotube structure after adsorption procedure. Moreover, it was shown that some interference molecules such as H₂O, H₂S and NH₃ cannot significantly change the electronic properties of B₂CNT. Therefore, the Si-doped tube might convert the presence of CO molecules to electrical signal.     

Direct Synthesis of Multiplexed Metal‐Nanowire‐Based Devices by Using Carbon Nanotubes as Vector Templates

We present the synthesis of metal nanowires in a multiplexed device configuration using single‐walled carbon nanotubes (SWNTs) as nanoscale vector templates. The SWNT templates control the dimensionality of the wires, allowing precise control of their size, shape, and orientation; moreover, a solution‐processable approach enables their linear deposition between specific electrode pairs in electronic devices. Electrical characterization demonstrated the successful fabrication of metal nanowire electronic devices, while multiscale characterization of the different fabrication steps revealed details of the structure and charge transfer between the material encapsulated and the carbon nanotube. Overall the strategy presented allows facile, low‐cost, and direct synthesis of multiplexed metal nanowire devices for nanoelectronic applications.     

WC/CNT纳米复合材料制备及其对甲醇氧化的电催化性能

采用表面修饰技术将碳纳米管(CNT)表面羧基化, 通过羧基将钨离子基团修饰到碳纳米管的外表面, 再通过原位还原碳化技术, 将钨离子基团还原成碳化钨(WC)纳米微粒, 制备出WC/CNT纳米复合材料. 采用FTIR、XRD、SEM、HRTEM和N2吸附等分析测试手段对样品的形貌、晶相组成和微观结构特征进行了表征. FTIR和N2吸附结果表明, 硝化后, 在碳纳米管表面羧基化的同时比表面积增加; XRD结果表明, WC/CNT样品由碳纳米管、WC以及非化学计量比的氧化钨组成; SEM和HRTEM结果表明, WC纳米颗粒均匀地分散于碳纳米管的外表面,并与碳纳米管构成了复合材料. 采用循环伏安法测试了样品在碱性条件下对甲醇氧化的电催化性能, 结果表明, 复合材料对甲醇氧化的电催性能明显强于WC 和碳纳米管, 并在实验结果的基础上探讨了复合材料催化性能提高的原因.     

WC/纳米碳管复合材料制备及其电化学性能

碳化钨具有类铂催化性能和较强的抗中毒能力, 但其催化活性远低于铂等贵金属催化剂. 如何提高其催化活性是碳化钨应用研究所面临的主要难点与热点之一. 为寻找改善碳化钨催化性能的技术方法, 本文将表面修饰与原位还原碳化技术相结合, 成功制备了碳化钨/纳米碳管复合材料, 采用XRD, HRTEM等手段对其形貌和晶相组成进行了表征, 并应用粉末微电极对其电催化性能进行了评价. 实验结果表明, 样品由碳化钨颗粒和纳米碳管组成, 碳化钨为形态不规则纳米颗粒, 均匀地生长于纳米碳管的外表面; 在碱性溶液中, 复合材料对对硝基苯酚的电催化性能明显强于具有介孔结构的纯碳化钨样品. 这说明将碳化钨复合到纳米碳管的外表面是提高碳化钨电催化活性的有效技术方法之一.     

ZnO纳米线基MWNTs/PVDF复合热电材料的制备及特性研究

将不同比例的多壁碳管(MWNTs)与聚偏二氟乙烯(PVDF)聚合物混合后,喷涂于n型ZnO半导体纳米线阵列上,制备了一种新型ZnO纳米线基MWNTs/PVDF热电复合材料.与以往采用价格昂贵的p型与n型单壁碳纳米管(SWNTs)与聚合物混合制备的复合热电材料特性相比,这种新型热电复合材料在降低制造成本的同时,利用分散于聚合物中MWNTs的一维电子传输特性及形成的大量界面势垒,加上ZnO半导体纳米线具有的较高载流子密度与迁移率,提高了复合热电材料中电子的输运特性,增加了材料对声子的散射强度.测试发现,在一定的温度梯度下,随着MWNTs添加质量百分比的增加,热电材料的温差电动势和电导率也随之增加,但其Seebeck系数变化量不大.研究表明,这种热电材料有望替代采用p型与n型SWNTs构建的SWNTs/PVDF复合热电材料.研究结果对开发超轻、无毒、廉价、可应用于各种微纳电子领域的新型电源具有重要的参考价值.     

Comparison of sample preparation methods for determination of free carbon in boron carbide by X-ray powder diffraction

Several sample preparation methods were evaluated for determination of free carbon in boron carbide powders by quantitative X-ray diffraction method, including ultrasonication, wet ball milling and dry ball milling–wet mixing. Quantitation was based on measuring the integral peak area ratio of the diffraction lines of graphite (002) to boron carbide (012) in samples spiked with pure graphite. The dry milling–wet mixing method provided the best precision and accuracy in all the measurements as well as in determination of free carbon in a boron carbide reference material. There was a linear relationship between the integral peak area ratios and graphite added to boron carbide samples which were purified from their free carbon content. The method provided a low detection limit of 0.05 wt% free carbon.     

Boron carbide-copper infiltrated cermets

Porous boron carbide preforms, prepared with and without excess carbon, were infiltrated with a Cu-Si alloy. Contrary to unalloyed copper, the Cu-Si alloy wets and infiltrates the porous preforms. A thermodynamic analysis of the B-C-Cu-Si system indicated that a Si content of the alloy above 15 at% leads to the formation of SiC. At higher Si content, the composition of boron carbide in contact with the melt also changes towards higher boron content. Metallographic examination validated these conclusions. The SiC compound forms preferentially around the free carbon particles in preforms containing excess carbon, and also in the vicinity of carbide that did not contain any excess carbon. Eventually, SiC, a product of the reaction between the carbide and the melt, forms a continuous barrier that impedes completion of the reaction and accounts for the limited increase of hardness as a result of lengthy heat treatments.