Si60团簇的结构及其与Si(111)面间碰撞的分子动力学模拟

利用紧束缚分子动力学退火方法模拟研究了Si60团簇的稳定结构和基态能量,结果表明Si60团簇为具有T对称性的截顶二十面体的富勒烯结构,平均键长为0236nm,直径为0933nm,原子结合能为4.45eVatom,JahnTeller效应对Si60团簇的结构有很大影响.通过对Si60分子和Si(111)面碰撞机理的粒子数、体积和能量不变分子动力学模拟,发现Si60分子吸附在Si(111)面所需要的垂直入射动能为40eV,Si60分子远不如C60分子稳定 关键词： 紧束缚 JahnTeller效应 碰撞     

硅团簇熔化行为的紧束缚分子动力学研究

利用紧束缚分子动力学方法研究了硅团簇Si_n(n=5—10)的熔化行为.给出了团簇 熔化潜热 和熔点随团簇尺寸的变化关系，表明团簇熔化潜热和熔点强烈依赖于团簇的原子数.计算结 果表明硅团簇熔化机理与金属团簇熔化有很大不同，金属小团簇的熔化是一个从低温类固态 向高温类固态转变的过程，在转变温区，类固态和类液态处于动力学共存，而硅团簇在转变 温区则是处于一种中间态，这种中间态既不是类固态又不是类液态.比较了用不同计算方法 和定义方法所得硅团簇熔点. 关键词： 紧束缚 硅团簇 熔化潜热     

AuCu249合金团簇热稳定性的原子尺度计算研究

采用基于嵌入原子法的NVT正则系综分子动力学方法,在原子尺度上计算了包含249个原子的金属间化合物AuCu₂₄₉合金团簇由固态转变为熔体的结构演化过程. 根据对分布函数、原子密度分布函数和主要原子键对数目随温度的变化,发现在温度从低温升到高温的过程中,合金团簇内伴随着原子的连续位置交换,团簇呈现由外及里的分阶段结构转变. 同时还发现在团簇内原子堆积结构转变过程中,Au原子出现由团簇内层向外层运动的趋势,而Cu原子则有由外层向内层运动的趋势. 关键词： 合金团簇 分子动力学 计算机模拟 相变     

Morse团簇M_n(n=2-100)基态结构特性的模拟淬火算法研究

本文基于Morse两体势函数采用微正则系综分子动力学模拟淬火方法求解了Morse团簇M_n(n=2-100)的基态几何结构和能量.计算结果准确重复了剑桥数据库中已给出的M_n(n=5-80)团簇的最低能量值,体现出基于微正则系综的分子动力学模拟淬火方法在寻找团簇基态结构上的有效性.通过分析Morse团簇的平均束缚能、二阶差分能和一阶差分能、平均最近邻原子间距及平均配位数,得到n=13,19,23,26,39,46,55,71为团簇幻数数列,发现相较平均配位数的影响、团簇平均最近邻原子间距对Morse团簇基态结构的稳定性基本不产生作用.     

Morse团簇Mn（n=2-100）基态结构特性的模拟淬火算法研究

本文基于Morse两体势函数采用微正则系综分子动力学模拟淬火方法求解了Morse团簇Mn（n=2~100）的基态几何结构和能量．计算结果准确重复了剑桥数据库中已给出的Mn(n=5~80)团簇的最低能量值,体现出基于微正则系综的分子动力学模拟淬火方法在寻找团簇基态结构上的有效性．通过分析Morse团簇的平均束缚能、二阶差分能和一阶差分能、平均最近邻原子间距及平均配位数,得到n=13,19,23,26,39,46,55,71为团簇幻数数列,发现相较平均配位数的影响、团簇平均最近邻原子间距对Morse团簇基态结构的稳定性基本不产生作用．     

锗团簇Ge65, Ge70, Ge75的稳定结构及其电子结构性质

将两种全局结构搜索方法(压缩液态法、遗传算法)与锗的紧束缚势模 型相互结合, 对Ge₆₅, Ge₇₀, Ge₇₅的稳定结构进行了大规模的搜寻,提 出能量较低的可能结构, 然后进一步利用第一性原理方法对这些低能结构进行精确 的优化计算, 确定出了这三种尺寸团簇的基态结构. 发现这三种团簇各具有两种稳定的并且能量相近的异构体: 类球形和类椭球形, 这与实验上报道的大尺寸团簇Ge_n (65 ≤ n ≤ 80) 的结构特征相符合. 简要地分析了这三种团簇基态结构的电子性质. 关键词： 锗团簇 紧束缚势 遗传算法 压缩液态法     

Irn(n=2-25)团簇基态结构的遗传算法研究

用遗传算法结合Gupta紧束缚模型势研究了Irn(n=2-25)团簇的基态结构.分析了Irn(n=2-25)团簇的基态结构随团簇尺寸的变化规律.计算结果表明,Irn(n=2-25)团簇的每个原子的平均束缚能和平均第一近邻随团簇尺寸的增加而增大,以总束缚能的二阶差分为判据,Irn(n=2-25)团簇的幻数是4、7、9、13、15、19、23.     

Rhn,Ptn(n=2～20)团簇基态结构的遗传算法研究

用遗传算法结合Gupta紧束缚模型势研究了Rhn, Ptn(n=2～20)团簇的最低能量结构.当n≤13时,两种团簇具有相似的几何结构,都从密堆积结构向二十面体结构演化;当n＞13时,铑团簇的基态结构倾向于有序结构,而铂团簇的基态结构则倾向于无序结构.Rhn, Ptn(n=2～20)团簇中每个原子的平均束缚能和配位数随团簇尺寸的增加而增大.能量的二阶差分给出Rhn, Ptn(n=2～20)团簇的幻数是4,6,13,15.     

硅团簇结构和碎片行为的紧束缚理论方法

利用紧束缚分子动力学模拟退火方法研究了硅团簇Sin(n=2—14)的结构性质和能量.通过与前人工作结果(Si2—Si10)的比较,发现本理论方法的结果相当准确地再现了从头计算的结论.对较大的硅团簇所作的计算给出了有意义的结构预测.从能量观点出发,计算结果表明原子数分别为4,6,7,10,12和14的硅团簇较为稳定.还进一步研究了硅团簇的碎片行为,理论计算的结果表明较大的硅团簇的稳定碎片产物通常包括一个或两个“幻数”团簇     

低温下Au959团簇负载于MgO(100)表面后结构变化的分子动力学研究

采用基于Chen-Mbius反演方法,从金属/金属氧化物界面第一性原理计算的粘结能结果中推导出的Au/MgO原子间相互作用势的正则系综（NVT）分子动力学,模拟了在10 K条件下,Au₉₅₉团簇负载于MgO（100）表面后团簇结构的变化.根据原子对分析技术和对分布函数的分析表明,由于团簇界面处原子间距与载体原子间距相匹配,置于载体上的Au团簇经过一个变形过程后,较其孤立自由表面时的团簇体积变大. 关键词： 团簇 分子动力学 计算机模拟 表面     

Stuffed fullerene structures for medium-sized silicon clusters

The structural properties of medium-sized silicon clusters (Si₄₀, Si₄₅ and Si₅₀) have been studied using an unbiased global genetic algorithm search incorporated with a tight-binding model, followed by gradient-corrected density functional calculations. Stuffed fullerene cages are obtained as energetically favorite structures. The stuffing/cage ratio (m/n for Si_m@Si_n) can be understood by a space filling picture. The present results, along with our recent works on Si_N (N=27-39) clusters [20], suggest that stuffed fullerene cages are the preferred structural growth pattern of medium-sized silicon clusters.     

Silicon clusters produced by femtosecond laser ablation: non-thermal emission and gas-phase condensation

Neutral silicon clusters Si_n (up to n=7) and their cations Si_n⁺ (up to n=10) have been produced by femtosecond laser ablation of bulk silicon in vacuum and investigated using time-of-flight mass spectrometry. Two populations of the Si_n⁺ clusters with different velocity and abundance distributions in the ablation plume have been clearly distinguished. Possible mechanisms of cluster formation (Coulomb explosion, gas-phase condensation, phase explosion) are discussed. PACS 52.38.Mf; 61.46.+w; 79.20.Ds     

Oxygen impact on quantum confinement effect for silicon clusters in different size regimes: ab initio investigations

The phenomena where the parameter like optical gap, HOMO-LUMO gap etc of a cluster will behave like a monotonic function with respect to its size is called quantum confinement effect. Here we are dealing with clusters having number of silicon atoms as 10, 16, 19, 20, 35, 54 and 78 which are representatives of different size regime clusters. For each clusters we have experimented with a number of isomers and the results we are showing are only of the stable most isomers. Then for each clusters we are capping them with oxygen atoms and calculating their optical response using DFT based calculations. We also calculate their HOMO-LUMO gap with and without oxygen atoms. The main essence of this work is mainly revolving around the variation of optical gap as well as the HOMO-LUMO gap for all the clusters with respect to their size and also whether oxygen insertion can induce any changes in quantum confinement effect. Also for Si₂₀, Si₁₉, Si₁₆ and Si₁₀ we have calculating the optical spectra with a variation of inserted oxygen on the surface of those clusters. All the calculation are performed using Vienna ab initio simulation package (VASP) and Car Parrinello molecular dynamics (CPMD) for geometry optimization. The optical spectra of the clusters are performed by real space PARSEC code and time dependent density functional theory implemented RGWBS code which takes into account the many body effects using GW and BSE equations.     

Silicon cluster formation in the laser ablation of SiO at 308 nm

Neutral silicon cluster formation in the laser (308 nm) ablation of silicon monoxide was investigated through the analysis of composition and dynamics of the ablation plume under different laser fluence conditions. The neutral species were ionized by a second laser (193 nm) and the positionized species detected by TOF-MS (time-of-flight mass spectrometry). At low laser fluences, plume composition is dominated by SiO; above 0.6 J/cm² Si, SiO and Si₂ have comparable intensity and Si_n (n≤7) clusters are observed. Flow velocities and temperatures of the ejected species are nearly mass-independent, indicating that the plume dynamics are close to the strong expansion limit, implying a collisional regime. Through the relation between the estimated values of terminal flow velocity and surface temperature, u_T²∝T_S, it is found that, at low laser fluences, the surface temperature increases linearly with laser fluence, whereas, at the laser fluence at which Si_n clusters are observed, the increase of temperature is below the linear dependence. The population distribution of the ejected Si_n provides some indication of a formation mechanism based on condensation. Analogies between the ablation behavior of silicon monoxide and silicon targets are considered. PACS 82.30.Nr; 81.05.Gc; 78.70.-g     

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

The chemical and phase compositions of silicon oxide films with self-assembled nanoclusters prepared by ion implantation of carbon into SiO _x (x < 2) suboxide films with subsequent annealing in a nitrogen atmosphere have been investigated using X-ray photoelectron spectroscopy in combination with depth profiling by ion sputtering. It has been found that the relative concentration of oxygen in the maximum of the distribution of implanted carbon atoms is decreased, whereas the relative concentration of silicon remains almost identical over the depth in the layer containing the implanted carbon. The in-depth distributions of carbon and silicon in different chemical states have been determined. In the regions adjacent to the layer with a maximum carbon content, the annealing results in the formation of silicon oxide layers, which are close in composition to SiO₂ and contain silicon nanocrystals, whereas the implanted layer, in addition to the SiO₂ phase, contains silicon oxide species Si²⁺ and Si³⁺ with stoichiometric formulas SiO and Si₂O₃, respectively. The film contains carbon in the form of SiC and elemental carbon phases. The lower limit of the average size of silicon nanoclusters has been estimated as ∼2 nm. The photoluminescence spectra of the films have been interpreted using the obtained results.     

On the mechanism of cluster emission in sputtering

The intensity and the energy distribution of Si⁺_n cluster ions emitted from clean silicon have been measured for different target orientations as a function of the primary ion energy (3–30 keV) and the projectile mass (noble gas ion bombardment). The results favour the idea that clusters are emitted as such rather than being produced by vacuum recombination of individually emitted atoms and ions.     

Simulation of doping and primary radiation damage to the SiC(111) surface under bombardment by Si<Subscript><Emphasis Type="Italic">N</Emphasis></Subscript> atomic and cluster ions (<Emphasis Type="Italic">N</Emphasis> = 1, 5, and 60) using classical molecular dynamics

The features of the cascade of atomic collisions, the spatial distribution of dopes, and primary radiation damage in a near-surface region of cubic silicon carbide under bombardment by Si _N ions and clusters (N = 1, 5, and 60) in the case of the same energy per one atom of the particle-projectile (200 and 1000 eV/atom) are studied in this paper. The study is carried out using classical molecular dynamics. As a result, several features of the low-energy implantation of polyatomic clusters in SiC(111) are revealed, namely, a relatively weak effect of the size of the implanted cluster on the distribution of ranges of incorporated atoms, a low degree of nonlinear effects at the cascade and postcascade stages, and formation of amorphous regions in the target during cluster implantation.     

Geometries,stabilities and electronic properties of small-sized Pd2-doped Sin (n = 1–11) clusters

The geometries, growth patterns, relative stabilities and electronic properties of small-sized Pd₂Si_n and Si_n+2 (n = 1–11) clusters are systematically studied using the hybrid density functional theory method B3LYP. The optimised structures revealed that the lowest energy Pd₂Si_n clusters are not similar to those of pure Si_n clusters. When n = 9, one Pd atom in Pd₂Si₉ completely falls into the centre of the Si outer frame, forming metal-encapsulated Si cages. On the basis of the optimised structures, the averaged binding energy, fragmentation energy, second-order energy difference and highest occupied–lowest unoccupied molecular orbital energy gap are calculated. It is found that the Pd₂Si₅ and Pd₂Si₇ clusters have stronger relative stabilities among the Pd₂Si_n clusters. Additionally, the stabilities of Si_n+2 clusters have been reduced by the doping of Pd impurity. The natural population and natural electronic configuration analysis indicated that the Pd atoms possess negative charges for n = 1–11 and there exist the spd hybridisation in the Pd atom. Finally, the chemical hardness, chemical potential, electrostatic potential and polarisability are discussed.     

Structure of α-FeSi alloys with 8 and 10 at % silicon

The atomic structure of single-crystal samples of Fe_{1 ? x} Si _x (x = 0.08, 0.10) alloys has been investigated using X-ray diffraction. It has been shown that the body-centered cubic (BCC) lattice of these alloys contain clusters with local ordering of the B2 type, which are characteristic of alloys with depleted composition (x = 0.05?0.06). The Fe₃Si phase with the D0₃ structure has been revealed at silicon concentrations x = 0.08 and 0.10. The volume fraction of Fe₃Si-phase regions increases both with an increase in the silicon concentration in the Fe_{1 ? x} Si _x alloy and during annealing of the samples with this silicon concentration at a temperature of 450°C. Based on the results obtained, it has been concluded that the anisotropic distribution of the B2 clusters, which arises as a result of thermomagnetic or thermomechanical treatment, is responsible for the induction and stability of the uniaxial magnetic anisotropy in the Fe_{1 ? x} Si _x (x = 0.05?0.10) alloys.