Exciton condensation in coupled quantum wells

Bound electron-hole pairs—excitons—are Bose particles with small mass. Exciton Bose-Einstein condensation is expected to occur at a few degrees Kelvin—a temperature many orders of magnitude higher than for atoms. Experimentally, an exciton temperature well below 1 K is achieved in coupled quantum well (CQW) semiconductor nanostructures. In this contribution, we review briefly experiments that signal exciton condensation in CQWs: a strong enhancement of the indirect exciton mobility consistent with the onset of exciton superfluidity, a strong enhancement of the radiative decay rate of the indirect excitons consistent with exciton condensate superradiance, strong fluctuations of the indirect exciton emission consistent with critical fluctuations near the phase transition, and a strong enhancement of the exciton scattering rate with increasing concentration of the indirect excitons revealing bosonic stimulation of exciton scattering. Novel experiments with exciton condensation in potential traps, pattern formation in exciton system and macroscopically ordered exciton state will also be reviewed briefly.     

Temperature dependent time-resolved exciton luminescence in GaAs/AlGaAs quantum wires and dots

Transient photoluminescence of GaAs/AlGaAs quantum wires and quantum dots formed by strain confinement is studied as a function of temperature. At low temperature, luminescent decay times of the wires and dots correspond to the radiative decay times of localized excitons. The radiative decay time can be either longer or shorter than that of the host quantum well, depending on the size of the wires and dots. For small wires and dots (∼ 100 nm stressor), the exciton radiative recombination rate increases due to lateral confinement. Exciton localization due to the fluctuation of quantum well thickness plays an important role in the temperature dependence of luminescent decay time and exciton transfer in quantum wire and dot structures up to at least ∼ 80 K. Lateral exciton transfer in quantum wire and dot structures formed by laterally patterning quantum wells strongly affects the dynamics of wire and dot luminescence. The relaxation time of hot excitons increases with the depth of strain confinement, but we find no convincing evidence that it is significantly slower in quasi 1-D or 0-D systems than in quantum wells.     

Time-resolved studies of single quantum dots in magnetic fields

We present time-resolved and time-integrated spectroscopy of single InAs quantum dots grown in a GaAs matrix. We observe a number of interesting features in the spectra, including the zero field splitting of exciton and biexciton lines due to quantum dot asymmetry. By the application of an in-plane magnetic field, the normally optically active and inactive exciton states become mixed, enabling us to optically probe the normally inaccessible ‘dark’ states. Time resolved measurements on the mixed states show decay times several times longer than the exciton lifetime at zero field, which we show to be consistent with a dark exciton lifetime orders of magnitude longer than that for bright exciton.     

Direct and spatially indirect excitons in GaAs/AlGaAs superlattices in strong magnetic fields

Luminescence and luminescence excitation spectra are used to study the energy spectrum and binding energies of direct and spatially indirect excitons in GaAs/AlaAs superlattices, with different widths of the electron and hole minibands, located in a high magnetic field perpendicular to the heterolayers. It is found that the ground state of the indirect excitons formed by electrons and holes and spatially separated between neighboring quantum wells lies between the ls ground state of the direct excitons and the continuum threshold for dissociated exciton states in the minibands. Indirect excitons in superlattices have a significant oscillator strength when the binding energy of the exciton exceeds the order of the width of the resulting miniband. The behavior of the binding energy of direct and indirect heavy hole excitons during changes in the tunneling coupling between the quantum wells is established. It is shown that a strong magnetic field, which intensifies the Coulomb interaction between the electron and hole in an exciton, weakens the bond in a system of symmetrically bound quantum wells. The spatially indirect excitons studied here are analogous to first order Wannier-Stark localized excitons in superlattices with inclined bands (when an electrical bias is applied), but in the present case the localization is of purely Coulomb origin. Zh. éksp. Teor. Fiz. 112, 1106–1118 (September 1997)     

Quantum degeneracy of microcavity polaritons

We investigate experimentally one of the main features of a quantum fluid constituted by exciton polaritons in a semiconductor microcavity, that is, quantum degeneracy of a macroscopic fraction of the particles. We show that resonant pumping allows us to create a macroscopic population of polaritons in one quantum state. Furthermore, we demonstrate that parametric polariton scattering results in the transfer of a macroscopic population of polariton from one single quantum state into another one. Finally, we briefly outline a simple method which provides direct evidence of the first-order spatial coherence of the transferred population.     

Direct and spatially indirect excitons in GaAs/AlGaAs superlattices in strong magnetic fields

Luminescence and luminescence excitation spectra are used to study the energy spectrum and binding energies of direct and spatially indirect excitons in GaAs/AlGaAs superlattices having different electron and hole miniband widths in high magnetic fields perpendicular to the heterolayers. The ground state of the indirect excitons formed by electrons and holes which are spatially distributed among neighboring quantum wells is found to lie between the ground 1s state of the direct excitons and the threshold of the continuum of dissociated exciton states in the minibands. The indirect excitons have a substantial oscillator strength when the binding energy of the exciton exceeds the scale of the width of the resulting miniband. It is shown that a high magnetic field shifts a system of symmetrically bound quantum wells toward weaker bonding. At high exciton concentrations, spatially indirect excitons are converted into direct excitons through exciton-exciton collisions. Fiz. Tverd. Tela (St. Petersburg) 40, 833–836 (May 1998)     

Long-lived intermediate state in strain-confined quantum dots

We have studied carrier transfer to strain confined dots from a host quantum well, using selectively excited time-resolved photoluminescence spectroscopy. We find that the photoluminescence decay rate after picosecond excitation is much slower when excitation is indirect, via transfer from the quantum well, then when it is directly into the dot, even though the decay of the quantum well photoluminescence is fast. This result is inconsistent with a simple three level kinetic model of the transfer process. We propose a tentative model involving an intermediate nonradiative state, possibly the charge separated state predicted theoretically.     

Magnetic field effect on transitions between direct and indirect excitons in diluted magnetic semiconductor double quantum wells

Transitions between direct and indirect excitons with change of magnetic field in double quantum well heterostructure Cd_1−xMg_xTe/Cd_1−yMg_yTe/Cd_1−xMg_xTe/Cd_1−zMn_zTe/Cd_1−xMg_xTe in external magnetic field are studied. The structure contains diluted magnetic semiconductor (Cd,Mn)Te layer that forms magnetic quantum well with the depth depending on the magnetic field intensity. Above some magnetic field the indirect exciton becomes the lowest excited state of the system. The indirect exciton lifetime exceeds by several orders of magnitude of the direct exciton one. The range of quantum well widths for which the indirect exciton is the exciton lowest state was estimated for the proposed system.     

Collective phenomena in cold indirect excitons

Due to their long lifetimes, indirect excitons can cool to below the temperature of quantum degeneracy. This gives an opportunity to experimentally study cold composite bosons. Both theoretically predicted phenomena and phenomena that have not been anticipated were observed in a cold gas of indirect excitons. In this contribution, we overview our studies of cold indirect excitons over the past decade, presenting spontaneous coherence and condensation of excitons, spatially modulated exciton state, long-range spin currents and spin textures, and exciton localization–delocalization transitions.     

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers.By measuring the exciton decay time as a function of the monitored emission energy at different temperatures,we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 12OK. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.     

Exciton states in asymmetric GaInNAs/GaAs coupled quantum wells in an applied electric field

The electronic and optical properties of exciton states in GaInNAs/GaAs coupled quantum well (CQW) structure have been theoretically investigated by solving the Schrödinger equation in real space. The effect of well width on the exciton states has been also studied by varying the well width from 5?nm to 10?nm in asymmetric structures. The electron, hole and exciton states are calculated in the presence of an applied electric field. It is found that there are two direct (bright) exciton states with the largest oscillator strengths. Their energies weakly depend on the electric field due to the compensation between the blue shift and red shift of the electron–hole pair states. In addition, these two states are overlap in the case of symmetric CQWs and one of them is then shifted to higher energy in asymmetric CQWs. The ground state exciton has the binding energy of approximately 7.3?meV and decrease to around 3.0?meV showing the direct to indirect transition of the ground state. The direct–indirect crossover is observed at different electric field for different structure. It happens at the electric field when the e1–e2 electron anticrossing or h1–h2 hole anticrossings is observed, so that the crossover can be controlled by the well width of CQWs structure.     

Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer

A very long lifetime exciton emission with non-single exponential decay characteristics has been reported for single InA-s/GaAs quantum dot(QD) samples,in which there exists a long-lived metastable state in the wetting layer(WL)through radiative field coupling between the exciton emissions in the WL and the dipole field of metal islands.In this article we have proposed a new three-level model to simulate the exciton emission decay curve.In this model,assuming that the excitons in a metastable state will diffuse and be trapped by QDs,and then emit fluorescence in QDs,a stretchedlike exponential decay formula is derived as I(t)=At~(β-1)e~(-(rt)β),which can describe well the long lifetime decay curve with an analytical expression of average lifetime     

Optical Bloch Equations Modified with Phonon-Induced Intensity-Dependent Dephasing

We extend the exciton population equations of a two-level quantum dot system with weak excitation to the ones with strong excitations, in which, the phonon-induced intensity-dependent dephasing time and decay rate are involved. The straightforward calculated populations from the modified population equations demonstrate the damping behavior of Rabi oscillation as the external field increasing. The effect of the intensity-dependent dephasing time and the intensity-dependent decay rate are also discussed.     

Optical Bloch Equations Modified with Phonon-Induced Intensity-Dependent Dephasing

We extend the exciton population equations of a two-level quantum dot system with weak excitation to the ones with strong excitations, in which, the phonon-induced intensity-dependent dephasing time and decay rate are involved. The straightforward calculated populations from the modified population equations demonstrate the damping behavior of Rabi oscillation as the external field increasing. The effect of the intensity-dependent dephasing time and the intensity-dependent decay rate are also discussed.     

Radiative and non-radiative relaxation of excitons in strain-compensated quantum dots

We have investigated the population dynamics of excitons in strain-compensated InAs quantum dots (QDs) using a pump–probe technique under resonant excitation. Precise control of polarization directions of incident pulses enabled us to selectively estimate population lifetimes for two orthogonally polarized exciton ground states according to polarization selection rules. Measured decay times of the probe transmissions were highly dependent on the polarization directions of the exciton states. We found that the ratio of the decay times for the orthogonally polarized states is in quantitative agreement with the ratio of square of the transition dipole moments. This indicates that radiative recombination processes have a dominant effect on the population dynamics and that non-radiative and spin relaxations are negligible in our QDs. As a result, we can estimate the radiative lifetimes to be 1.0±0.1 and 1.7±0.2 ns for orthogonally polarized exciton ground states.     

Exciton condensation in semiconductor quantum wells with a periodical modulation of potential

The appearance and properties of a structure in the density distribution of indirect excitons in coupled quantum wells in semiconductor alloys upon periodical field modulation are studied. Calculations showed that besides periodical dependence of density distribution, caused by the potential modulation, a stratification of the exciton density shafts into separate islands in the cross direction arises. Appearance of islands is the result of exciton condensed phase formation and a nonequilibrium state of the system due to the finite exciton lifetime and pumping presence. The dependence of the structure on system parameters (the pumping value, the modulated field depth and period) is investigated. Also the influence of the exciton–exciton annihilation is taken into account.     

Effects of the dark-exciton state on photoluminescence dynamics in surface-modified CdS quantum dots prepared by a colloidal method

We have investigated exciton dynamics in surface-modified CdS quantum dots (QDs) prepared by a colloidal method. The size- and surface-controlled CdS QDs have been successfully prepared by using a size-selective photoetching and surface modification technique. The decay profiles exhibit an unusual temperature dependence: increase of the decay time with increase in temperature. The temperature dependence of the decay profiles can be explained in terms of a three-level model including the exciton state with a triplet origin, the so-called dark-exciton state.     

Stimulated and spontaneous optical generation of electron spin coherence in charged GaAs quantum dots

We report on the coherent optical excitation of electron spin polarization in the ground state of charged GaAs quantum dots via an intermediate charged exciton (trion) state. Coherent optical fields are used for the creation and detection of the Raman spin coherence between the spin ground states of the charged quantum dot. The measured spin decoherence time, which is likely limited by the nature of the spin ensemble, approaches 10 ns at zero field. We also show that the Raman spin coherence in the quantum beats is caused not only by the usual stimulated Raman interaction but also by simultaneous spontaneous radiative decay of either excited trion state to a coherent combination of the two spin states.     

Quantum Noise and Squeezed Light by Dipolaritons in the Nonlinear Regime

The quantum noise and the squeezing effect, in the transmitted light, by a dipolariton system formed by a double quantum wells microcavity in the strong coupling regime are investigated. It is shown that the indirect exciton nonlinearity generates stronger squeezing than the direct exciton nonlinearity, nevertheless produces very high fluctuations for some particular detunings and nonlinearities. The system shows a considerable sensitivity to the thermal excitations where the coupling to the direct and indirect excitonic thermal baths progressively destroys the nonclassical effect. Despite that, indirect exciton squeezing manifests a higher resistance against the thermal bath temperature. As a result, the emission field is strongly governed by the indirect excitons, varying between robust squeezing and excess noise.     

Scheme for Implementing Quantum Dense Coding and Teleportation with Tripartite Entangled State in Cavity QED

In this paper, we present a peculiar tripartite entangled state that is inequivalent to both the GHZ state and the W state, and then propose to implement efficient quantum information processing such as quantum dense coding and teleportation with this entangled state in cavity QED. In this scheme the atoms interact with a highly detuned cavity field with the assistance of a strong classical driven field. It does not require the transfer of quantum information between the atomic system and the cavity, and then our scheme is insensitive to both the cavity decay and the thermal field.