Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer |
| |
| Affiliation: | 1.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;3.Beijing Academy of Quantum Information Sciences, Beijing 100193, China |
| |
| Abstract: | A very long lifetime exciton emission with non-single exponential decay characteristics has been reported for single InA-s/GaAs quantum dot (QD) samples, in which there exists a long-lived metastable state in the wetting layer (WL) through radiative field coupling between the exciton emissions in the WL and the dipole field of metal islands. In this article we have proposed a new three-level model to simulate the exciton emission decay curve. In this model, assuming that the excitons in a metastable state will diffuse and be trapped by QDs, and then emit fluorescence in QDs, a stretched-like exponential decay formula is derived as $I\left( t \right)=A\, t^{\beta -1}{\rm e}^{-\left( rt \right)^{\beta }}$, which can describe well the long lifetime decay curve with an analytical expression of average lifetime $\langle\tau\rangle=\frac{1}{r}\mathrm{\Gamma } ( \frac{1}{\beta }+1 )$，where $\Gamma $ is the Gamma function. Furthermore, based on the proposed three-level model, an expression of the second-order auto-correlation function $g^{2}\left( t \right)$ which can fit the measured $g^{2}\left( t \right)$ curve well, is also obtained. |
| |
| Keywords: | quantum dots collective excitations charge carriers time resolved spectroscopy |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|
