Femtosecond-pulse laser ablation of human corneas

A femtosecond pulse laser in the visible spectral region shows promise as a potentially new powerful corneal sculpting tool. It combines the clinical and technical advantages of visible wavelengths with the high ablation quality observed with nanosecond-pulse excimer lasers at 193 nm. A femtosecond and a nanosecond dye laser with pulse durations of 300 fs and 7 ns, and centre wavelengths at 615 nm and 600 nm, respectively, both focused to an area of the order of 10^–5 cm², have been applied to human corneal ablation. Nanosecond laser pulses caused substantial tissue disruption within a 30–100 m range from the excision edge at all fluences above the ablation threshold of F _th60 J cm^–2 (I _th9 GW cm^–2). Completely different excisions are produced by the femtosecond-pulse laser: high quality ablations of the Bowman membrane and the stroma tissue characterised by damage zones of less than 0.5 m were observed at all fluences above ablation threshold of F _th1 J cm^–2 or I _th3 TW cm^–2 (3×10¹² W cm^–2). The transparent cornea material can be forced to absorb ultrashort pulses of extremely high intensity. The fs laser generates its own absorption by a multiphoton absorption process.     

Femtosecond laser ablation characteristics of nickel-based superalloy C263

Femtosecond laser (180 fs, 775 nm, 1 kHz) ablation characteristics of the nickel-based superalloy C263 are investigated. The single pulse ablation threshold is measured to be 0.26±0.03 J/cm² and the incubation parameter ξ=0.72±0.03 by also measuring the dependence of ablation threshold on the number of laser pulses. The ablation rate exhibits two logarithmic dependencies on fluence corresponding to ablation determined by the optical penetration depth at fluences below ∼5 J/cm² (for single pulse) and by the electron thermal diffusion length above that fluence. The central surface morphology of ablated craters (dimples) with laser fluence and number of laser pulses shows the development of several kinds of periodic structures (ripples) with different periodicities as well as the formation of resolidified material and holes at the centre of the ablated crater at high fluences. The debris produced during ablation consists of crystalline C263 oxidized nanoparticles with diameters of ∼2–20 nm (for F=9.6 J/cm²). The mechanisms involved in femtosecond laser microprocessing of the superalloy C263 as well as in the synthesis of C263 nanoparticles are elucidated and discussed in terms of the properties of the material.     

Tungsten silicide formation by XeCl excimer-laser irradiation of W/Si samples

We report a study of the formation of tungsten silicide at the W-Si interface, induced by multipulse (up to 300 shots) XeCl excimer-laser irradiation of W(150 nm)/Si and W(500 nm)/Si samples. Laser fluences ranging from 0.6 to 1.8 J/cm² were used. After laser treatment the samples were examined by different diagnostic techniques: Rutherford backscattering spectrometry, X-ray scattering, resistometry, and surface profilometry. Numerical computations of the evolution and depth profiles of the temperature in the samples as a consequence of a single 30 ns laser pulse were performed as well. The results indicate that it is possible to obtain a tungsten silicide layer at the W-Si interface at quite low fluences. The layer thickness increases with the number of laser pulses. Complete reaction of the 150 nm thick W film with silicon was obtained at the fluence of 1.2 J/cm² between 30 and 100 laser pulses and at 1.5 J/cm² after 30 laser pulses. The sheet resistance of these silicides was 5–10 . At the used fluences for the 500 nm thick W film only the onset of silicide synthesis at the W-Si interface was observed.     

Processing of W/Si and Si/W bilayers and multilayers with single and multiple excimer-laser pulses

Interdiffusion phenomena, thermal damage and ablation of W/Si and Si/W bilayers and multilayers under XeCl-excimer laser (=308 nm) irradiation at fluences of 0.15, 0.3 and 0.6 J/cm² were studied. Samples were prepared by UHV e-beam evaporation onto oxidized Si. The thickness of W and Si layers and the total thickness of the structures were 1–20 nm and 40–100 nm, respectively. 1 to 300 laser pulses were directed to the same irradiation site. At 0.6 J/cm² the samples were damaged even by a single laser pulse. At 0.3 J/cm² WSi₂ silicide formation, surface roughening and ablation were observed. The threshold for significant changes depends on the number of pulses: it was between 3–10 pulses and 10–30 pulses for bilayers with W and Si surfaces, respectively, and more than 100 pulses for multilayers with the same total thickness of tungsten. At 0.15 J/cm² the periodicity of the multilayers was preserved. Temperature profiles in layered structures were obtained by numerical simulations. The observed differences of the resistance of various bilayers and multilayers against UV irradiation are discussed.     

Transient reflectivity and transmission changes during plasma formation and ablation in fused silica induced by femtosecond laser pulses

We have studied the plasma formation and ablation dynamics in fused silica upon irradiation with a single 120 fs laser pulse at 800 nm by using fs-resolved pump-probe microscope. It allows recording images of the laser-excited surface at different time delays after the arrival of the pump pulse. This way, we can extract both the temporal evolution of the surface reflectivity and transmission, at 400 nm, for different spatial positions in the spots (and thus for different local fluences) from single series of images. At fluences well above the visible ablation threshold, a fast and large increase of the reflectivity is induced by the formation of a dense free-electron plasma. The maximum reflectivity value is reached within ≈1.5 ps, while the normalized transmission decreases within ≈400 fs. The subsequent temporal evolution of both transient reflectivity and transmission are consistent with the occurrence of surface ablation. In addition, the time-resolved images reveal the existence of a free-electron plasma distribution surrounding the visible ablation crater and thus formed at local fluences below the ablation threshold. The lifetime of this sub-ablation plasma is ≈50 ps, and its maximum electron density amounts to 5.5×10²² cm⁻³.     

Picosecond laser ablation of SiO2 layers on silicon substrates

In this work, we report on laser ablation of thermally grown SiO₂ layers from silicon wafer substrates, employing an 8–9 ps laser, at 1064 (IR), 532 (VIS) and 355 nm (UV) wavelengths. High-intensity short-pulse laser radiation allows direct absorption in materials with bandgaps higher than the photon energy. However, our experiments show that in the intensity range of our laser pulses (peak intensities of <2×10¹² W/cm²) the removal of the SiO₂ layer from silicon wafers does not occur by direct absorption in the SiO₂ layer. Instead, we find that the layer is removed by a “lift off” mechanism, actuated by the melting and vaporisation of the absorbing silicon substrate. Furthermore, we find that exceeding the Si melting threshold is not sufficient to remove the SiO₂ layer. A second threshold exists for breaking of the layer caused by sufficient vapour pressure. For SiO₂ layer ablation, we determine layer thickness dependent minimum fluences of 0.7–1.2 J/cm² for IR, 0.1–0.35 J/cm² for VIS and 0.2–0.4 J/cm² for UV wavelength. After correcting the fluences by the reflected laser power, we show that, in contrast to the melting threshold, the threshold for breaking the layer depends on the SiO₂ thickness.     

Direct observation of laser-induced crystallization of a-C:H films

The post-growth modification of diamond-like amorphous hydrogenated carbon a-C:H films by laser treatment has been studied by transmission electron microscopy and Raman spectroscopy. a-C:H films grown on Si substrates by benzene decomposition in a rf glow discharge were irradiated with 15 ns pulses of a KrF-excimer laser with fluences in the range of E=50–700 mJ/cm². At fluences below 100 mJ/cm² an increase in the number of graphitic clusters and in their ordering was evidenced from Raman spectra, while the film structure remained amorphous according to electron microscopy and electron diffraction observations. At higher fluences the appearance of diamond particles of 2–7 nm size, embedded into the lower crystallized graphitic matrix, was observed and simultaneously a progressive growth of graphite nanocrystals with dimensions from 2 nm to 4 nm was deduced from Raman measurements. The maximum thickness of the crystallized surface layer (400 nm) and the degree of laser annealing are limited by the film ablation which starts at E>250 mJ/cm². The laser-treated areas lose their chemical inertness. In particular, chemical etching in chromium acid becomes possible, which may be used for patterning the highly inert carbon films.     

Effect of melting on the excitation of surface acoustic wave pulses by UV nanosecond laser pulses in silicon

The influence of melting on the excitation of Surface Acoustic Wave (SAW) pulses in silicon is studied both theoretically and experimentally. The developed theory of Rayleigh-type SAW laser-induced thermoelastic excitation in a structure composed of a liquid layer on a solid substrate predicts that the SAW is predominantly generated in the solid phase due to the absence of shear rigidity in a liquid. The characteristic changes in the SAW pulse shape as well as the saturation and even the decrease of the SAW pulse amplitude observed above the melting threshold are explained theoretically to be a result of the decrease of the heat flux into the solid phase as well as due to the decrease of the volume of the solid phase caused by melting. Although the heat flux into the solid phase is decreased both as a consequence of the reflectivity increase and the additional energy losses (latent heat of melting) at the phase transition, it is demonstrated that the influence of reflectivity changes on the SAW pulse is negligible in comparison with the effect of melt-front motion. For laser pulses of 7 ns duration at 355 nm, the threshold value of laser fluence for meltingF _m=0.23±0.04 J/cm² and for the ablationF _a=1.3±0.2 J/cm² were determined experimentally as the points of characteristic changes in the observed SAW pulses.     

飞秒激光对高反膜的破坏及其超快动力学过程

研究了800nm飞秒激光照射下45°高反膜ZrO2-Si O2的破坏及其超快动力学过程。利用原子力显微镜和扫描电镜观察了材料的烧蚀形貌,测量了破坏阈值与脉冲宽度、烧蚀深度与脉冲能量的依赖关系。随着脉冲宽度从50fs增加到900fs,其烧蚀阈值从0.35J/cm2增加到1.78J/cm2。烧蚀深度与激光能流密度近似成对数关系。当激光强度略高于烧蚀阈值时,材料很快被烧蚀到几百纳米,烧蚀深度表现出明显的层状特性。同时,利用建立的抽运探针实验系统,测量了高强度抽运脉冲作用下材料对探针光的反射率随延迟时间的变化,揭示了薄膜烧蚀的超快动力学过程。实验结果表明高反膜表层的材料对烧蚀特性有重要影响。     

Selective ablation of thin SiO<Subscript>2</Subscript> layers on silicon substrates by femto- and picosecond laser pulses

The selective ablation of thin (∼100 nm) SiO₂ layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decrease of the laser fluence needed for complete ablation of the dielectric layer with decreasing pulse duration. The threshold fluence for 100% ablation probability decreased from 750 mJ/cm² at 2 ps to 480 mJ/cm² at 50 fs. Significant corruption of the opened Si surface has been observed above ∼1200 mJ/cm², independent of pulse duration. By a detailed analysis of the experimental series the values for melting and breaking thresholds are obtained; the physical mechanisms responsible for the significant dependence on the laser pulse duration are discussed.     

Reflection of high-intensity nanosecond Nd:YAG laser pulses by metals

Total reflectivity of silver and molybdenum samples irradiated by high-intensity nanosecond Nd:YAG laser pulses in air of atmospheric pressure is experimentally studied as a function of laser fluence in the range of 0.1–100 J/cm². The study shows that at laser fluences below the plasma formation threshold the total reflectivity of both silver and molybdenum remains virtually equal to the table room-temperature reflectivity values. The total reflectivity of these metals begins to decrease at a laser fluence of the plasma formation threshold. As the laser fluence increases above the plasma formation threshold, the reflectivity sharply drops to a low value and then remains unchanged with further increasing laser fluence. Calculation of the surface temperature at the plasma formation threshold fluence shows that the surface temperature value is substantially below the melting point that indicates an important role of the surface nanostructural defects in the plasma formation on a real sample due to their enhanced heating caused by both plasmonic absorption and plasmonic nanofocusing.     

Using IR laser radiation for backside etching of fused silica

Laser-induced backside etching of fused silica with gallium as highly absorbing liquid is demonstrated using pulsed infrared laser radiation. The influences of the laser fluence, the pulse number, and the pulse length on the etch rate and the etched surface topography were studied and the results are compared with these of excimer laser etching. The high reflectivity of the fused silica-gallium interface at IR wavelengths results in the measured high threshold fluences for etching of about 3 J/cm² and 7 J/cm² for 18 ns and 73 ns pulses, respectively. For both pulse lengths the etch rate rises almost linearly with laser fluence and reaches a value of 350 and 300 nm/pulse at a laser fluence of about 12 and 28 J/cm², respectively. The etching process is almost free from incubation processes because etching with the first laser pulse and a constant etch rate were observed. The etched surfaces are well-defined with clear edges and a Gaussian-curved, smooth bottom. A roughness of about 1.5 nm rms was measured by AFM at an etch depth of 0.95 μm. The normalization of the etch rates with respect to the reflectivity and the pulse length results in similar etch rates and threshold fluence for the different pulse widths and wavelengths. It is concluded that etching is a thermal process including the laser heating, the materials melting, and the materials etching by mechanical forces. The backside etching of fused silica with IR-Nd:YAG laser can be a promising approach for the industrial usage of the backside etching of a wide range of materials. PACS 81.65.C; 81.05.J; 79.20.D; 61.80.B; 42.55.L     

KrF pulsed laser ablation of polyimide

In the present paper, polyimide surfaces were processed with pulsed KrF laser radiation at fluences near the ablation threshold. The morphology of the processed surfaces was studied by scanning electron microscopy and chemical analyses performed by electron dispersive spectroscopy. The formation of conical structures was observed for radiation fluences lower than 0.5 J/cm². The areal density of cones increases with the number of pulses and decreases with the radiation fluence. At low fluences (<150 J/cm²), cones are formed due to shadowing by calcium phosphate impurities while for higher fluences the main mechanism of cones formation is believed to be radiation hardening.     

Femtosecond laser ablation of silicon–modification thresholds and morphology

We investigated the initial modification and ablation of crystalline silicon with single and multiple Ti:sapphire laser pulses of 5 to 400 fs duration. In accordance with earlier established models, we found the phenomena amorphization, melting, re-crystallization, nucleated vaporization, and ablation to occur with increasing laser fluence down to the shortest pulse durations. We noticed new morphological features (bubbles) as well as familiar ones (ripples, columns). A nearly constant ablation threshold fluence on the order of 0.2 J/cm² for all pulse durations and multiple-pulse irradiation was observed. For a duration of ≈100 fs, significant incubation can be observed, whereas for 5 fs pulses, the ablation threshold does not depend on the pulse number within the experimental error. For micromachining of silicon, a pulse duration of less than 500 fs is not advantageous. Received: 4 December 2000 / Revised version: 29 March 2001 / Published online: 20 June 2001     

ArF-excimer-laser annealing of 3C–SiC films—diode characteristics and numerical simulation

We fabricated Schottky barrier diodes using 3C–SiC films deposited on Si(1 1 1) by lamp-assisted thermal chemical vapor deposition and annealed with an ArF excimer laser. Improvement in both the reverse current and the ideality factor was obtained with 1–3 pulses with energy densities of 1.4–1.6 J/cm² per pulse. We solved a heat equation numerically assuming a transient liquid phase of SiC. The calculated threshold energy density for melting the surface was 0.9 J/cm². The thermal effects of Si substrate on SiC film were also discussed. The experimental optimum condition was consistent the numerical simulation.     

Melting and resolidification of gold film irradiated by laser pulses less than 100 fs

The rapid melting and resolidification of gold films irradiated by laser pulses less than 100 fs are investigated using the dual-hyperbolic two-step model. The solid–liquid interfacial velocity in the ultrafast phase change process is obtained by coupling a hyperbolic interfacial energy balance equation and nucleation dynamics. The results are compared with the experimental data for the 28-fs laser. The effects of laser pulse widths and fluences on melting process are investigated. A phase chart of the variations of pulse widths and fluences is established. The relationship between the melting threshold and ablation threshold is also presented.     

Surface micro/nanostructuring of titanium under stationary and non-stationary femtosecond laser irradiation

In this paper the surface topography of titanium samples irradiated by femtosecond laser pulses is described. When the fluence is about 0.5 J/cm² periodic ripples with a period of about 700 nm are formed. For fluences between 0.5 and 2 J/cm², a microcolumnar surface texture develops in the center of the irradiated spots and ripples are formed in the periphery of the spots. When experiments are performed with a non-stationary sample, the microcolumns exhibit ripples similar to those observed when the radiation fluence is about 0.5 J/cm² and in the outer regions of the irradiated areas for fluences between 0.5 and 2 J/cm². Since the energy distribution in the transverse cross-section of the laser beam is Gaussian, we conclude that the ripples form when the microcolumns are subjected to fluences near the melting threshold of the material at the trailing edge of the moving laser beam.     

Sub-surface damage in indium phosphide caused by micromachining of grooves with femtosecond and nanosecond laser pulses

Grooves laser-micromachined in InP using 130 fs and 8 ns pulses with fluences 2 and 0.7 J/cm² are investigated by cross-sectional transmission electron microscopy. At the fluence of 2 J/cm², irradiation with both femtosecond and nanosecond laser pulses yield substantial resolidified layers with a maximum thickness of 0.5 m. In contrast, at the fluence of 0.7 J/cm², irradiation with nanosecond pulses leads to a layer of similar thickness, while femtosecond irradiation produces laser induced periodic surface structures with minimal resolidified material. For both fluences, femtosecond pulses generate substantial densities of defects extending over a few microns in depth, while nanosecond laser irradiation leads to no observable damage beneath the resolidified layer. The high peak power density and the stress confinement obtained from femtosecond pulses, along with incubation effects, are identified as the major factors leading the observed plastic deformations. PACS 61.80.Ba; 68.35.Gy; 79.20.Ds     

Recrystallization of germanium surfaces by femtosecond laser pulses

The damage morphology of germanium surfaces using femtosecond laser pulses of various fluences and number of pulses is reported. The single pulse damage threshold in the present experiment was 9.7±4.0×10⁻¹³ W/cm². The experimental threshold value was compared with theory, considering the damage threshold as the melting threshold. The cooling rate calculated on the basis of present results is 2.4×10^15°C/s. Recrystallization was the common feature of the damage morphology. For fluences greater than the single pulse damage-threshold micropits and spherical grains of micron size were formed in the damaged surface. Ablation (surface removal) was also observed at higher fluences (at two or three times of damage threshold value). The damage morphology, induced by multiple pulses, was unaffected for linear and circular polarization.     

Excimer-laser ablation and micro-patterning of ceramic Si3N4

3 N₄ has been investigated. The ablation threshold in air, Φ_th, is around 0.3±0.1 J/cm² with ArF- and 0.9±0.2 J/cm² with KrF-laser radiation. With fluences Φ_th<Φ<4 J/cm² the irradiated surface is either very flat or it exhibits a cone-type structure, depending on the number of laser pulses employed. With fluences of 5 to 10 J/cm², the sample surface becomes very smooth, much smoother than the original mechanically polished surface. Pores, scratches, and cracks observed on the non-irradiated surface are absent within the illuminated area. In this regime, the ablation rates are typically 0.1 to 0.2 μm/pulse. Received: 10 April 1997/Accepted: 11 April 1997