锗的应用与市场分析

分析了锗产量增长速度不快的原因和当前应用领域现状。并根据锗的性质，对锗市场作了分析，提出了扩大锗应用的看法。     

硼-锗骨架无机微孔材料研究进展

作为潜在的新型功能材料，硼-锗骨架微孔化合物近年来得到科学家的普遍关注。本文从结构化学的角度，分别讨论了硼酸盐、锗酸盐及硼锗酸盐研究体系，并对其中的典型结构进行了描述、归类与总结；针对硼、锗易成簇聚集的特点，探讨了硼-锗骨架无机微孔化合物研究的发展趋势。     

富锗红栓菌锗多糖的研究

通过生物工程技术，自行筛选的富锗红栓菌经发酵培养，有机锗与菌体内的多糖结合，再经分离纯化获得高活性生物调节剂－锗多糖，并研究了锗多糖的理化特性与结构。     

二氧化锗同类异构体在标化及高量锗测定中的影响

研究了用X-射线衍射分析纯二氧化锗分子结构与组成，以及结构中存在同类异构体时，不同分解方法对标定和锗测定结果的影响。提出了在锗滴定法中使用的基准二氧化锗，用Na2O2高温熔融分解，以消除因低温碱溶不完全，在标定时产生的误差导致锗结果偏高。拟定方法经实际运用，结果准确、满意。     

锌与锗对小鼠抗氧化作用影响的实验研究

对２４０只小鼠的血清、肝脏、肌肉进行了锌和锗含量，抗化指标ＳＯＤ活性、ＭＤＡ含量测定。观察结果表明，微量元素锌与锗在小鼠血清中有一定的竞争作用。血清锌锗与肌肉、肝脏锌、锗及ＳＯＤ有一定的相关性。由于锌和锗含量的变化，小鼠抗氧化作用受到了影响。当两者联合应用时，ＳＯＤ活性有不同程度增加，ＭＤＡ含量随之下降，提示了锌与锗在小鼠抗氧化方面有一定的协同作用。     

硅锗分子筛的结构稳固、结构可控调变及催化应用

硅锗分子筛因其超大的孔道结构, 在大分子催化反应领域具有潜在的应用前景. 硅锗分子筛骨架的富锗双四元环结构单元的不稳定性虽然限制了它们的实际应用, 但却为结构后处理修饰以构建新晶体结构分子筛提供了可能. 本文介绍了硅锗分子筛结构稳固、 结构可控调变和催化应用3个方面的研究进展, 并展望了其未来的发展方向和挑战.     

具有生物活性的有机锗化合的研究新进展

综述了近年来发展的具有各种生物活性的六类有机锗化合物的合成及生物活性，即倍半锗和介吗川类有机化合的，锗氧杂，锗氮杂及锗硫杂环酮类化合物，呋喃，噻唑，咪唑、嘧啶取代锗烷及其类似物，烷锗醇，熔锗醚和烷锗酮类化合物，卟啉锗类经合物，其它具有生物活性的有机锗化合物这六类有机锗化合物，并对该领域的研究前景作了展望。     

锗甲基丙酰—α—氨基酸酯系列倍半氧化物的合成与表征

锗甲基丙酰氯与α－氨基酸酯反应继而水解得到４个新的锗甲基丙酰－α－氨基酸乙酯倍半氧化物，研究了其ＩＲ，＾ＨＮＭＲ和１３ＣＮＭＲ与氨基酸代基结构效应的关系。     

具有生物活性的有机锗化合物的研究新进展

综述了近年来发现的具有各种生物活性的六类有机锗化合物的合成及生物活性，即倍半锗和介吗川类有机化合物，锗氧杂、锗氮杂及锗硫杂环酮类化合物，呋喃、噻唑、咪唑、嘧啶取代锗烷及其类似物，烷锗醇、烷锗醚和烷锗酮类化合物，卟啉锗类化合物，其它具有生物活性的有机锗化合物这六类有机锗化合物，并对该领域的研究前景作了展望。     

新型稀土杂多蓝的合成及其抗艾滋病病毒(HIV-1)活性和毒性研究

合成Keggin结构钨硅、钨锗、钨磷、钨坤两电子及四电子稀土钐盐杂多蓝，铈量滴定及元素分析方法确定了化合物的还原电子数及化学组成，采用IR，UV－Vis,^183W NMR和ESR等对其结果进行了表征，在人T淋巴MT－4内，对合成的化合物进行了系统的抗艾滋病毒（HIV－1）活性及毒性测定，发现Keggin结构钨硅、钨锗四电子稀土钐盐杂多蓝具有较强的抗HIV－1活性，其中钨锗酸钐四电子杂多蓝（代号HPBR－2）具有较高的治疗指数。     

Reversible oxidation state change in germanium(tetraphenylporphyrin) induced by a dative ligand: aromatic GeII(TPP) and antiaromatic GeIV(TPP)(pyridine)2

Treatment of GeCl2(dioxane) with Li2(TPP)(OEt2)2 (TPP = tetraphenylporphyrin) in THF yields Ge(TPP), the first free Ge(II) porphyrin complex. In pyridine Ge(TPP) is converted to Ge(TPP)(py)2, an antiaromatic Ge(IV) complex, whereas in benzene the reaction is reversed, and pyridine dissociates from Ge(TPP)(py)2 to form Ge(TPP). That reversible reaction represents an unusual, if not unique, example of an oxidation-state change in a metal induced by coordination of a dative ligand. UV-vis and 1H NMR spectroscopy show that Ge(TPP) is an aromatic Ge(II) porphyrin complex, while the 1H NMR spectrum of Ge(TPP)(py)2 clearly indicates the presence of a strong paratropic ring current, characteristic of an antiaromatic compound. Both Ge(TPP) and Ge(TPP)(py)2 have been crystallographically characterized, and the antiaromaticity of Ge(TPP)(py)2 leads to alternating short and long C-C bonds along the 20-carbon periphery of its porphine ring system. Coordination of pyridine to Ge(TPP) greatly increases its reducing ability: the Ge(TPP)0/2+ redox potential is about +0.2 V, while the Ge(TPP)(py)2(0/+) redox potential is -1.24 V (both vs. ferrocene). The equilibrium constant of the reaction Ge(TPP) + 2 py = Ge(TPP)(py)2 in C6D6 is 22 M-2. The germanium complex of the more electron-withdrawing tetrakis[3,5-bis(trifluoromethyl)phenyl]porphyrin, Ge(TArFP), and its pyridine adduct Ge(TArFP)(py)2 were synthesized. The equilibrium constant of the reaction Ge(TArFP) + 2 py = Ge(TArFP)(py)2 in C6F6/C6D6 is 2.3 x 10(4) M-2. Density functional theory calculations are consistent with the experimental observation that M(TPP)(py)2 formation from M(TPP) and pyridine is most favorable for M=Si, borderline for Ge, and unfavorable for Sn.     

NaGe3P3: a new ternary germanium phosphide featuring an unusual [Ge3P7] ring

A new ternary germanium phosphide, NaGe(3)P(3), was obtained for the first time with the use of NaP as the reactive flux. It crystallizes in the orthorhombic space group Pmc2(1). The basic structural unit is an unprecedented [Ge(3)P(7)] ring built from one Ge(P)(4) tetrahedron, one Ge(Ge)(P)(3) tetrahedron and one Ge(Ge)(P)(2) trigonal pyramid with Ge in mixed valences of 4+, 3+ and 1+. The bonding between a tetrahedrally coordinated Ge atom and a trigonal pyramidally coordinated Ge atom (with 4s(2) lone pair of electrons) is observed for the first time in inorganic compounds. These [Ge(3)P(7)] rings are connected with each other to form two-dimensional [Ge(3)P(3)](-) layers separated by Na(+) cations. An optical band gap of 2.06(2) eV was deduced from the diffuse reflectance spectrum. Based on the electronic structure calculation, NaGe(3)P(3) is an indirect gap semiconductor with the Ge 4s, Ge 4p and P 3p orbitals strongly hybridizing around the Fermi level.     

Formation of short-range order in Al–Ge–Fe melts: influence of composition

ABSTRACT

The short-range order in Al–Ge–Fe melts has been studied by X-ray diffraction and reverse Monte Carlo simulations in wide concentration range. Influence of the replacement of one component by another while the content of third component is constant on the formation of a local structure of ternary melts has been discussed. It has been shown that at Ge content less than 30 аt. % Ge atoms are uniformly distributed in the volume of the Al–Ge–Fe melts and atomic clusters with structure similar to the liquid germanium are formed at content more than 30 аt. % Ge. The addition of the third component (Ge or Al) to the binary Al–Fe or Fe–Ge melts, correspondingly, results in competition between Al and Ge atoms in formation of the local structure around Fe atoms. The obtained concentration dependences of the nearest neighbour distances point out that the ternary interactions take place in the Al–Fe–Ge melts.     

Density Functional Theory Study on Mechanism of Forming Spiro-Ge-heterocyclic Ring Compound from Me2Ge=Ge: and Acetaldehyde

The H₂Ge=Ge:, as well as and its derivatives (X₂Ge=Ge:, X=H, Me, F, Cl, Br, Ph, Ar, : : :) is a kind of new species. Its cycloaddition reactions is a new area for the study of germy-lene chemistry. The mechanism of the cycloaddition reaction between singlet Me₂Ge=Ge: and acetaldehyde was investigated with the B3LYP/6-31G* method in this work. From the potential energy profile, it could be predicted that the reaction has one dominant re-action pathway. The reaction rule is that the two reactants firstly form a four-membered Ge-heterocyclic ring germylene through the [2+2] cycloaddition reaction. Because of the 4p unoccupied orbital of Ge: atom in the four-membered Ge-heterocyclic ring germylene and the π orbital of acetaldehyde forming a π→p donor-acceptor bond, the four-membered Ge-heterocyclic ring germylene further combines with acetaldehyde to form an intermedi-ate. Because the Ge atom in intermediate happens sp3 hybridization after transition state, then, intermediate isomerizes to a spiro-Ge-heterocyclic ring compound via a transition state. The research result indicates the laws of cycloaddition reaction between Me₂Ge=Ge: and ac-etaldehyde, and lays the theory foundation of the cycloaddition reaction between H₂Ge=Ge: and its derivatives (X₂Ge=Ge:, X=H, Me, F, Cl, Br, Ph, Ar, : : :) and asymmetric π-bonded compounds, which are significant for the synthesis of small-ring and spiro-Ge-heterocyclic ring compounds.     

Interaction of triatomic germanium with lithium atoms: electronic structure and stability of Ge3Lin clusters

Quantum chemical calculations were applied to investigate the electronic structure of mono-, di-, and tri- lithiated triatomic germanium (Ge3Lin) and their cations (n = 0-3). Computations using a multiconfigurational quasi-degenerate perturbation approach (MCQDPT2) based on complete active space CASSCF wavefunctions, MRMP2 and density functional theory reveal that Ge3Li has a 2A' ground state with a doublet-quartet gap of 24 kcal/mol. Ge3Li2 has a singlet ground state with a singlet-triplet (3A' '-1A1) gap of 30 kcal/mol, and Ge3Li3 a doublet ground state with a doublet-quartet (4A' '-2A') separation of 16 kcal/mol. The cation Ge3Li+ has a 1A' ground state, being 18 kcal/mol below the 3A' state. The computed electron affinities for triatomic germanium are EA(1) = 2.2 eV (experimental value is 2.23 eV), EA(2) = -2.5 eV, and EA(3) = -5.9 eV, for Ge3-, Ge32-, and Ge33-, respectively, indicating that only the monoanion is stable with respect to electron detachment, in such a way that Ge3Li is composed of Ge3-Li+ ions. An atoms in molecules (AIM) analysis shows the absence of a Ge-Ge-Li ring critical point in Ge3Li. An electron localization function (ELF) map of Ge3Li supports the view that the Ge-Li bond is predominantly ionic; however, a small covalent character could be anticipated from the Laplacian at the Ge-Li bond critical point. The ionic picture of the Ge-Li bond is further supported by the natural bond orbital (NBO) results. The calculated Li affinity value for Ge3 is 2.17 eV, and the Li+ cation affinity value for Ge3- amounts to 5.43 eV. The larger Li+ cation affinity of Ge3- favors an electron transfer, resulting in a Ge3-Li+ interaction.     

Facile Synthesis of Amorphous Ge Supported by Ni Nanopyramid Arrays as an Anode Material for Sodium-Ion Batteries

In this work, we introduce Ni nanopyramid arrays (NPAs) supported amorphous Ge anode architecture and demonstrate its effective improvement in sodium storage properties. The Ni−Ge NPAs are prepared by facile electrodeposition and sputtering method, which eliminates the need for any binder or conductive additive when used as a Na-ion battery anode. The electrodes display stable cycling performance and enhanced rate capabilities in contrast with planar Ge electrodes, which can be owing to the rational design of the architectured electrodes and firm bonding between current collector and active material (i. e. Ni and Ge, respectively). To validate improvement of nanostructures on electrochemical performance, sodium insertion behavior of crystalline Ge derived from Mg₂Ge precursor has been investigated, in which limited but effective enhancement of sodium storage properties are realized by introducing porous nanostructure in crystalline Ge. These results show that elaborately designed configuration of Ge electrodes may be a promising anode for Na-ion battery applications.     

Interaction of diatomic germanium with lithium atoms: electronic structure and stability

Quantum chemical calculations were applied to investigate the electronic structure of mono-, di-, and trilithiated digermanium (Ge2Lin) and their cations (n=0-3). Computations using a multiconfigurational quasidegenerate perturbation approach based on complete active space self-consistent-field wave functions, and density functional theory reveal that Ge2Li has a 2B1 ground state with a doublet-quartet energy gap of 33 kcal/mol. Ge2Li2 has a singlet ground state with a 3Au-1A1 gap of 29 kcal/mol, and Ge2Li3 a doublet ground state with a 4B2-2A2 separation of 22 kcal/mol. The cation Ge2Li+ has a 3B1 ground state, being 13 kcal/mol below the open-shell 1B1 state. The computed electron affinities for diatomic germanium are EA(1)=1.9 eV, EA(2)=-2.5 eV, and EA(3)=-6.0 eV, for Ge2-, Ge2 (2-), and Ge2 (3-), respectively, indicating that only the monoanion is stable with respect to electron detachment, in such a way that Ge2Li is composed by Ge2-Li+ ions. An "atoms-in-molecules" analysis shows the absence of a ring critical point in Ge(2)Li. An electron localization function analysis on Ge2Li supports the view that the Ge-Li bond is predominantly ionic; however, a small covalent character could be anticipated from the analysis of the Laplacian at the Ge-Li bond critical point. The ionic picture of the Ge-Li bond is further supported by a natural-bond-order analysis and the Laplacian of the electron density. The calculated Li affinity value for Ge2 is 2.08 eV, while the Li+ cation affinity value for Ge2- is 5.7 eV. The larger Li+ cation affinity value of Ge2- suggests a Ge2-Li+ interaction and thus supports the ionic nature of Ge-Li bond. In GeLi4 and Ge2Li, the presence of trisynaptic basins indicates a three-center bond connecting the germanium and lithium atoms.     

Ultrafast hot-carrier dynamics at chemically modified Ge interfaces probed by SHG

Time-resolved second-harmonic generation (SHG) was used to study the hot-carrier dynamics and nonlinear optical properties of S-terminated and Cl-terminated Ge(111) interfaces on the femtosecond time scale. The hot-carrier second-order nonlinear optical susceptibilities were determined to be 720 +/- 50 times greater than the valence-band second-order nonlinear optical susceptibilities for the Ge(111)-S system and 880 +/- 100 times greater in the Ge(111)-Cl system. Furthermore, the ground- and excited-state second-order nonlinear optical susceptibilities are suggested to be out of phase for Ge(111)-S and Ge(111)-Cl systems, leading to a pump-induced decrease in the SHG signal as opposed to the increase in the SHG signal observed in the Ge(111)-GeO2 system. Although the SHG response reaches a steady state in 415 +/- 90 fs in the Ge(111)-GeO2 system, a faster response is observed in the Ge(111)-S system, 220 +/- 85 fs, and in the Ge(111)-Cl system, 172 +/- 50 fs. This suggests significantly faster carrier cooling at the Ge(111)-Cl and Ge(111)-S interfaces, with significant implications for hot-carrier mediated device degradation, and migration to high-K dielectrics.     

云南临沧锗矿区及其周围现代植物对锗的富集作用研究

研究表明云南临沧锗矿区及其周围现代植物中锗含量明显高于国内外报道的某些地区现代植物中的锗含量；元素的植物吸收系数为６．３，表明锗在研究区现代植物中为强聚集元素。     

Vacancy ordering in SmGe2-x and GdGe2-x (x = 0.33): structure and properties of two Sm3Ge5 polymorphs and of Gd3Ge5

The crystal structures and the magnetic properties of three new binary rare-earth intermetallic phases are reported. alpha-Sm3Ge5 and beta-Sm3Ge5 and Gd3Ge5 have been prepared from the corresponding elements through high-temperature reactions using the flux-growth method. The structures of the three compounds have been established using single-crystal X-ray diffraction: alpha-Sm3Ge5 crystallizes with its own type in the hexagonal space group P2c (No. 190) with cell parameters a = 6.9238(11) A, c = 8.491(3) A, and Z = 2, whereas beta-Sm3Ge5 adopts the face-centered orthorhombic Y3Ge5 type with space group Fdd2 (No. 43) and with cell parameters a = 5.8281(6) A, b = 17.476(2) A, c = 13.785(2) A, and Z = 8. The orthorhombic Gd3Ge5 with cell parameters a = 5.784(2) A, b = 17.355(6) A, and c = 13.785(5) A is isostructural with beta-Sm3Ge5. The structures of the title compounds can be described as AlB(2) and alpha-ThSi2 derivatives with long-range ordering of the germanium vacancies. Temperature-dependent DC magnetization (5-300 K) measurements show evidence of antiferromagnetic ordering below ca. 30 and 10 K for alpha-Sm3Ge5 and beta-Sm3Ge5, respectively. Gd3Ge5 undergoes two successive magnetic transitions below ca. 15 and 11 K. The temperature dependence of the resistivity and heat capacity of Gd3Ge5 are discussed as well.