缓冲层ZnPc对有机电致发光器件特性的影响

本文研究了酞菁锌(ZnPc)薄膜的表面形貌及ZnPc薄膜作为缓冲层对有机电致发光器件(OLEDs)光电特性的影响.对比两组样品的AFM图像,ZnPc薄膜相比于ITO薄膜,其表面的岛面积较大,薄膜表面更连续平整,基本上覆盖了ITO膜表面针孔,减少了表面的缺陷.另外,ZnPc薄膜的岛分布均匀有序.使用ZnPc作为缓冲层的器件性能明显好于未使用ZnPc修饰的器件,在7.42V的驱动电压下的最大发光亮度达到1.428kcd/m2,在4.3V电压驱动下时,最大光功率效率为1.411m/W;而未使用缓冲层的器件在8V的驱动电压下达到最大发光亮度达到1.212kcd/m2,在5.5V电压驱动下时,最大光功率效率为0.931m/W.     

PEDOT:PSS/ZnPc作为有机小分子太阳电池阳极修饰层的研究

采用阳极修饰法构建了基于酞菁铜(CuPc)和碳60(C60)的有机小分子太阳电池,分别研究了酞菁锌(ZnPc)、聚苯乙烯磺酸(PEDOT:PSS)和PEDOT:PSS/ZnPc作为阳极修饰层对该有机太阳电池输出性能的影响,并对三种修饰层的相关机理进行了探讨.结果表明:加入ZnPc修饰层的电池开路电压(Voc)增大,从0.372提高到0.479 V.旋涂PEDOT:PSS的电池短路电流(Jsc)提高,由1.943 mA/cm2提高到3.752 mA/cm2.而以PEDOT:PSS/ZnPc作为阳极修饰的电池Voc和Jsc均有较大的提高,Voc从 0.372 V提高到0.482 V,Jsc从1.943 mA/cm2提高到3.810 mA/ cm2,其转换效率可提高两倍以上.分析认为,ZnPc更有利于阳极空穴的输出,PEDOT:PSS能有效改善ITO表面的平整度的性质是提高太阳电池性能的主要原因.     

介电层修饰并五苯/红荧烯双有源有机薄膜晶体管的制备与性能研究

在Si/SiO2衬底上使用聚甲基丙烯酸甲酯(PMMA)制备器件介电层的修饰层,改善介电层界面质量并诱导有源层生长,从而提高有源层的结晶程度.通过真空蒸镀法生长并五苯/红荧烯双层结构有源层,制备有机薄膜晶体管(OTFT),并研究器件性能随红荧烯层厚度变化的情况.测试结果表明,修饰后的器件阈值电压为-3.55 V,电流开关比大于105,迁移率达到0.0558 cm2/V·s,亚阈值摆幅为1.95 V/dec,器件总体性能得到改善.     

ZnS-CdS核壳纳米微晶的制备与光学特性

采用微乳液法制备了核壳结构ZnS/CdS纳米微晶.以XRD、TEM表征其结构、粒度和形貌,UV、PL表征其光学性能.制得的纳米微晶近似呈球形,粒径4～5nm.研究了不同CdS壳层厚度的ZnS/CdS纳米微晶的光学性能,PL谱表明壳层CdS的修饰可减少ZnS的表面缺陷,表面态发射和非辐射跃迁减少,带边直接复合发光的几率增大,发光效率大大提高;在壳层CdS达到一定厚度时,PL谱却表现为CdS的特征发射,同时发现核心ZnS对壳层CdS的发光具有增强作用,提出了ZnS/CdS发光机理的能带模型.     

ZnO掺杂对PVK∶Ir(ppy)3体系发光特性的影响

以无机纳米颗粒ZnO作为电子传输材料,并以不同质量比掺杂到PVK∶ Ir(ppy)3体系作为发光层制成一系列磷光器件,器件结构为:ITO/PVK∶ Ir(ppy)3∶ ZnO(100∶ 1∶ x)/ BCP/Alq3/Al, ZnO的掺杂浓度x分别为0;,1;,2;,5;,10;,研究了它们的电致发光特性.结果表明:合适比例ZnO掺杂可以改善器件的发光特性,ZnO的最佳掺杂量为1;,此时器件的相对发光强度是未掺杂的器件的4倍,器件的启亮电压也由未掺杂时的15.5 V降到了10.5 V.当掺杂浓度较大时,电子传输过多在电极另一侧形成漏电流,没有在发光层内进行电子与空穴有效复合,没有对发光起到作用,导致器件的发光性能下降.     

荧光标记用Sr2MgSi2O7∶Eu2+,Dy3+纳米发光材料的研究

通过水热共沉淀法制备了Sr2MgSi2O7∶Eu2+,Dy3+纳米发光材料并对其进行表面修饰,研究了添加不同金属络合剂对样品粒径、分散性、发光性能的影响及表面修饰后样品的性能.通过X射线衍射分析,激发发射光谱及余辉性能测试研究了不同金属络合剂对Sr2MgSi2O7∶Eu2+,Dy3+结晶性能、发光性能的影响,通过SEM和TEM图分析研究了不同金属络合剂对颗粒粒径、分散性的影响,结果表明添加EDTA时样品结晶与发光性能良好且粒径为50～ 200 nm,为制备Sr2 MgSi2O7∶Eu2+,Dy3+纳米发光颗粒的最佳添加剂.此外,将样品进行表面修饰后,通过红外光谱、Zeta电势分析研究了其官能团的连接情况和电势大小,通过纳米粒度分析、SEM和TEM图谱分析研究了表面修饰后样品的粒径分布、形貌以及核壳结构,结果表明样品表面修饰后成功包裹了SiO2壳层,并通过悬浮测试证明了SiO2包覆后的长余辉纳米粒子悬浮性能良好.     

碳酸铯阴极缓冲层对有机太阳电池器件性能的影响

以poly(3-hexyhhiophene)(P3HT)作为电池给体材料,[6,6]-phenyl-C60-butyric acid methyl ester(PC61BM)为电池受体材料,使用Cs2CO3作为电池的阴极修饰层,通过测量不同条件下制备的器件的J-V曲线和转换效率,研究了Cs2CO3的厚度以及退火温度对电池器件性能的影响.结果表明在2000 r/min转速下旋涂Cs2CO3并在130℃温度下进行退火10 min,电池的短路电流、填充因子、转换效率分别提高到11.56 mA/cm2、58.28;、3.37;,与未处理的器件相比效率提高了16;,而且使用碳酸铯作为阴极缓冲层可以有效的提高电池的稳定性,延长器件的寿命.     

PLD制备的籽晶层对ZnO纳米棒形貌及性能的影响

本文研究了脉冲激光沉积法(PLD)制备的不同籽晶层对水热生长ZnO纳米棒的形貌及发光性能的影响,通过比较得出,籽晶层是获得高度取向,排列有序的ZnO纳米棒的基础.电子回旋共振(ECR)氧等离子体参与沉积,有利于获得表面均匀且光滑平整的籽晶层,进而得到形貌及结晶质量较好的ZnO纳米棒.籽晶层的厚度不仅能够改变纳米棒的疏密程度,而且还能够改善纳米棒的取向性.通过调节籽晶层的退火温度可以调节纳米棒直径的大小,恰当的籽晶层退火温度也是获得形貌优良的ZnO纳米棒的一个关键因素.     

活性层优化对有机小分子太阳能电池的影响

首先制备了给体(AlPcCl)和受体(C70)比例为1∶1的电池器件并采用不同的温度对电池进行退火处理,发现在120℃的温度下退火电池器件的性能最好,器件的转换效率从2.28;提高到2.47;,增加了8.3;.为进一步优化电池器件的性能,制备了在相同的活性层厚度下不同的给受体比例的电池器件,发现在给受体的厚度之比为1∶5时器件性能最好,电池开路电压为0.8V,短路电流为10.21 mA/cm2,填充因子为46.04;,转换效率为3.71;.     

激发功率密度和阱层厚度对极化InGaN/GaN多量子阱光致发光性能的影响

用MOCVD技术在c面蓝宝石衬底上生长了具有不同阱层厚度的InGaN/GaN多量子阱结构,研究了阱层厚度和激发功率密度对多量子阱光致发光(PL)性能的影响.结果表明,随着激发功率密度的增加,PL的峰值波长会出现不同程度的蓝移,且阱层越厚,蓝移的越明显.PL的峰值波长随着激发功率密度和阱厚的变化关系可以用光生载流子对极化场的屏蔽效应和带隙填充效应来解释.阱最薄的样品(1.8 nm)由于其极化效应最弱,电致发光谱具有最高的发光强度,但其发光波长较短仅有430 nm.     

Photoconduction and transport mechanisms in polycrystalline zincphthalocyanine thin films

Zincphthalocyanine (ZnPc) thin films were prepared by the vacuum evaporation method under a pressure of 10^‐6 mbar. The X‐ray diffraction analysis of vacuum evaporated ZnPc films reveals that the structure of the films is polycrystalline in nature. The photoconduction properties have been studied in the wavelength range 400 –800nm using suitable masks. The Photoconductivity of the films as a function of light intensity and applied voltage were studied and results were discussed in detail. The photoconduction was found to increase with higher light illumination and maximum at the band edge of the ZnPc thin film. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of substrate temperature on the optical constants of zincphthalocyanine thin films

The influence of the film thickness and substrate temperature on optical constants of the vacuum evaporated ZincPhthalocyanine (ZnPc) thin films have been reported in this paper. The direct and allowed optical band gap energy has been evaluated from the (αhυ)² vs. (hυ) plots. The optical constants such as extinction coefficient (k_f) and refractive index (n) have been evaluated from the transmittance values and the observed results strongly dependent on substrate temperature and film thickness. The low values of the refractive index have been observed for the films prepared at T_s=200°C. The change in crystallanity and phase transformation affect the optical constants and the lower values of the optical constants will leads to the good quality of the ZnPc thin films. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Features of Light Transmission and Stark Effect in a Plasmonic Nanostructure Comprising Organic Semiconductor and Subwavelength Aluminum Grating

Crystallography Reports - Specific features of light transmission and electroabsorption in a plasmonic nanostructure with organic semiconductor (zinc phthalocyanine, ZnPc) and subwavelength...     

Spectral Features of Zinc Phthalocyanine: Optics,Stark Spectroscopy,and Photovoltaics

Crystallography Reports - The results of spectral analysis of organic semiconductor, zinc phthalocyanine (ZnPc), which is one of the best donor materials for solar power engineering but is...     

Complex Refractive Indices of Zinc Phthalocyanine,Fullerene C70, and Their Mixed Composition

Crystallography Reports - Spectral properties of organic semiconductors (zinc phthalocyanine (ZnPc), fullerene C70, and their mixture (ZnPc : C70) have been studied. The...     

Influence of the dipping coating procedure on the mechanical strength of soda-lime glass rods

In order to investigate the effect of sol-gel coatings on the mechanical behavior of a high strength glass substrate, HF etched glass rods were used.

Coatings with different compositions (SiO₂, ZrO₂ and 20%ZrO₂---80%SiO₂) and different thicknesses were produced to study the influence of these parameters on strength.

Functions of integral probability versus strength were used to analyze data.

Coated glass rods exhibit higher strength in comparison with uncoated control rods that have undergone the same treatment. It seems evident that there is an effect of composition on strengthening. SiO₂ coated rods displayed higher strength.

A lowering in strength at thickness higher than 0.2 μ was observed, independently of composition.

The effect of a saturated Ca(OH)₂ solution was also studied.     

Study of the effect of neutron damage on anodic oxidation of monocristalline silicon solar cells for the purpose of determining phosphorus concentration depth profile using neutron activation analysis

Neutron activation analysis for the determination of phosphorus concentration depth profile in monocristalline silicon solar cells, requires known thicknesses of silicon oxide grown on the irradiated silicon sample by anodic oxidation. These are then etched by an HF solution which is measured for the β radioactivity of P³². The thickness of silicon oxide formed by anodic oxidation is known by establishing the linear calibration curve giving the thickness versus the voltage used. Neutron damage on silicon samples modify their resistivity and consequently the thicknesses of silicon oxide formed by anodic oxidation will vary according to the resistivity of irradiated silicon samples. To study this effect, samples were irradiated at different neutron doses in a 1 MW nuclear research reactor at a position where the thermal neutron flux is in the order of 10¹³ n cm⁻² s⁻¹. For each dose, the resistivity of the irradiated silicon samples was measured using the four points probe method; for the doses considered a linear relationship between neutron dose and resistivity has been observed. The samples where then treated by anodic oxidisation to establish the calibration curve (thickness of silicon oxide versus voltage) for each dose and the thicknesses were measured by Rutherford backscattering with a Van de Graaf accelerator and α particles of 2 MeV. Finally, the oxide growing rate (Å/V) was determined versus the neutron fast fluence.     

GeS/MoS2异质结电子结构及光学性能的第一性原理研究

以MoS₂、GeS为代表的二维层状材料在光学、电学等方面表现出优异的物理性能。如何将两者的优良性能结合,同时获得具有新的协同功能的复合材料对电子器件的发展和应用具有重要意义。本文采用密度泛函理论的第一性原理计算方法,对GeS/MoS₂异质结的电子结构及光学性质进行了系统研究,并探索了界面间距、应变和电场对异质结电子结构和光学性能的影响。研究结果表明,GeS/MoS₂异质结是Ⅱ型能带排列,该能带排列有利于光生电子-空穴对的分离。进一步研究发现,通过应变和电场等手段可以实现对GeS/MoS₂异质结能带排列及光吸收系数的有效调控。该研究结果表明GeS/MoS₂异质结在光催化、光电器件等领域具有潜在的应用,为设计与制备GeS/MoS₂相关的光电器件提供了理论指导。