芯片表面的冷极性分子静电阱与微阱阵列

提出一种利用三根载荷金属杆来实现在芯片表面陷俘冷极性分子的静电阱.给出空间静电场等高线分布.通过调节电极电压操控阱中心距离芯片表面的高度.用经典的蒙特卡罗方法模拟冷分子被装载和囚禁的动力学过程.方案对中心速度为11 m·s^-1的冷分子束,最大装载效率可以达到40%,阱中分子的温度大约为25 mK.方案可以进一步微型化、集成化,形成一维和二维静电微阱阵列,在量子计算、低维物理等方面有应用价值.     

囚禁冷原子或冷分子的可控制光学八阱及其光学晶格

提出了一种利用单束平面光波照明二元订相位板与透镜组合系统实现冷原子或冷分子囚禁的可控制光学八阱的新方案，计算与分析了该方案产生的势阱光强分布和八阱的特征参数、强度梯度及其曲率，讨论了从光学八阱到四阱或到双阱的演化过程。研究表明通过相对移动二元订相位板可实现光学八阱到四阱或到双阱的连续双向演化。该方案在超冷原子物理、冷分子物理、原子光学、分子光学与量子光学甚至量子计算与信息处理等领域中有着广阔的应用前景。     

一种新颖的表面空心微光阱阵列

提出了采用四台阶相位光栅与微透镜阵列组合产生一种新颖的表面空心微光阱阵列的方案，研究了表面空心微光阱阵列的光强分布，计算了相应的光学囚禁势，并讨论了该微光阱阵列在原子分子光学中的潜在应用.研究表明当用1W的YAG激光照射时，在1cm²面积上可产生近10⁴个空心光阱，每个光阱具有较小的囚禁体积和较大的有效光强及其强度梯度，对⁸⁵Rb原子的光学囚禁势可达190μK.如此深的光阱足以囚禁冷原子或冷分子，并可用于实现全光型原子或分子玻色-爱因斯坦凝聚，甚至制备新颖的光学晶格等. 关键词： 空心光阱 冷原子或冷分子 光学晶格     

一种针对弱场搜寻态冷极性分子的可控静电表面囚禁方案

提出一种使用带电金属环和六个球电极和一个外加偏置电场实现对冷极性分子静电囚禁的新方案.计算装载和囚禁时空间电场分布.囚禁中心距离芯片表面的高度可以通过外电场和环形电极所加电压来操控.蒙特卡罗模拟表明对于中心速度为15 m·s^-1的ND₃分子束,装载效率可以达到70%,得到冷分子的温度大约为45 mK.当继续增加偏置电场强度时,单阱分裂为对称的两个阱.如果同时改变球形电极上所加电压,得到不对称的两个阱,可以借此来调节两个阱中所囚禁的冷分子数目的比例.为了易于理解,用蒙特卡罗方法模拟了装载、囚禁、分裂冷分子波包的动力学过程.     

实现冷原子、冷分子光学囚禁的组合三光学势阱方案

提出了一种利用单束平面光波照明液晶空间光相位调制器与透镜组合系统实现在透镜焦平面上的可演化组合三光学势阱方案.分析了该组合三光学势阱的形成原理,计算了势阱的相关特征参数,研究了从组合三光学势阱到双阱或到单阱的双向演化过程.最后,探讨了该组合三光学势阱及其新颖三阱光学晶格方案在实现物质波四波混频、三原子样品冷碰撞性质研究等领域中潜在应用前景. 关键词： 原子光学 原子分子囚禁 液晶空间光相位调制器 组合三光学势阱     

实现冷原子或冷分子囚禁的可控制光学四阱

提出了一种利用单光束照明二元π相位板与透镜组合系统实现冷原子或冷分子囚禁的可控制光学四阱新方案.计算了四阱的光强分布，讨论了从光学四阱到双阱或到单阱的演化过程，并导出了四阱和双阱几何参数、光强分布、强度梯度及其曲率与光学透镜系统参数间的解析关系.研究表明，通过相对移动二元π相位板可实现光学四阱到双阱或到单阱的连续双向演化，获得了四阱或双阱间距与相位板移动距离的关系.该方案在超冷原子物理、冷分子物理、原子光学、分子光学和量子光学，甚至量子计算及信息处理等领域中有着广阔的应用前景. 关键词： 二元π相位板 可控制光学四阱 原子分子囚禁 原子光学     

芯片表面上极性冷分子的静电囚禁

提出了采用芯片表面上方形载荷导线框产生的静电场实现极性冷分子芯片表面囚禁的新方案,计算了方形载荷导线框周围的电场分布,分析了囚禁中心位置和导线框几何参数之间的依赖关系,并研究了过囚禁中心在x和z方向的电场强度和其对应的CO分子的Stark囚禁势与几何参数之间的关系.研究表明,对于CO分子,该方案的有效势阱深度可达130...     

利用原子芯片上Z形磁阱囚禁中性87Rb原子

利用解析和数值方法计算了Z形磁阱的囚禁势,发现当囚禁中心和芯片表面距离较远时(该距离和Z形线中部导线的一半长度相差不超过一个量级),势阱的深度不能近似表示成偏置磁场By对应的能量,而要减去囚禁中心的势能高度;而增加By进行磁阱压缩到一定值时,势阱深度反而会下降.此外介绍了原子芯片的制作方法,以及利用原子芯片上Z形磁阱囚禁中性87Rb原子的实验装置和实验过程.最终有2×106个87Rb原子被转移到Z形磁阱中.     

一种新颖的全光型表面原子(分子)漏斗

提出了一种产生全光型表面原子(分子)漏斗的新方案.采用红失谐高斯激光束照明由柱面透镜组成的光学系统，可在透镜焦平面附近产生横向漏斗形光强分布，以构成一表面光波导型原子漏斗.计算了漏斗的光强分布及其光学偶极势与偶极力分布.研究结果表明：该原子漏斗可用于冷原子(分子)的表面光波导、分束器和干涉仪以及微阱囚禁的有效装载，因而在集成原子光学及其原子芯片的研究中有着重要的应用. 关键词： 原子漏斗 分子漏斗 光学偶极势 原子芯片     

超冷单原子分子阵列

用光镊形成光阱囚禁单个原子、用激光将单个原子冷却到基态形成超冷原子、将超冷原子相干合成单个超冷分子、将单原子分子重排串成丰富多样的超冷单原子分子阵列,这就构成了精密相干可控的多粒子量子系统,为多种前沿科学研究与技术发展提供难得的量子平台.文章介绍近年来在单原子量子态高保真操控、异核原子量子纠缠、原子一分子耦合态相干控制...     

Electrostatic microtrap on the surface of the chip

As is well known in atomic optics, the nonadiabatic transitions induce the loss of atoms trapped in a magnetic well which seriously affects the formation of the Bose-Einstein condensates. Electrostatic traps have widespread applications in molecular optics. While, for most existing electrostatic traps, the electric field strength in the trap center is nearly zero which may cause the nonadiabatic transitions. Especially for a chip-based microtrap, ingenious design is need to overcome this problem. In the paper, we propose a novel electrostatic microtrap composed of four arc-shaped electrodes. The influences of the voltages and the geometrical parameters of the electrodes on the electric field strength as well as the height of the potential well are studied. The distributions of electrostatic field are numerically calculated. We firstly simulate the trajectory of one molecule in the processes of loading and trapping. After that, we simulate the movements of a large number of molecules using the method of Monte Carlo. Then we calculate the temperature of trapped cold molecules. After that, we analyze the impacts of voltages and the geometrical parameters on the efficiency of our microtrap. At last, we show that our scheme can evolve into electrostatic microtrap arrays which should be a powerful tool for a variety of basic research and applications.     

Improved method to retrieve aerosol optical properties from combined elastic backscatter and Raman lidar data

Two methods to load a microtrap consisting of two concentric microwire loops of radii 300 and 660 μm carrying oppositely oriented currents are demonstrated. Atoms can be directly loaded into the microtrap from a surface magneto-optical trap or alternatively using a far-off resonance optical dipole trap (FORT) as an intermediate step. About 1 × 10^{5 87}Rb atoms can be loaded into the microtrap using either technique although the FORT achieves a lower temperature. The FORT is well suited to loading a linear array of 3 microtraps that are aligned with the propagation direction of the infrared laser. Atoms can be trapped in either the $5S_{1/2}\;F=1$ or 2 ground state hyperfine level. The position of the microtrapped atom cloud can be precisely adjusted using a bias magnetic field over a distance of 350 to slightly <50 μm from the atom chip surface.     

从聚酰亚胺单分子链电荷陷阱特性的改变探讨体材料的沿面放电现象

沿面放电是破坏绝缘系统性能的原因之一.聚酰亚胺常用于高频电力设备的气-固绝缘中,为此利用密度泛函理论,从原子分子层面探讨了在外电场下聚酰亚胺及其受极性基团OH~–影响后的单分子链结构、能级与态密度、静电势、激发态等微观参数对陷阱形成以及沿面放电的影响.结果表明,外电场下,聚酰亚胺分子结构卷曲,偶极矩增加,易于积聚电荷形成空间电荷中心,尤属引入极性基团OH~–后变化较明显;聚酰亚胺分子中,苯环区域形成空穴陷阱,酰亚胺环区域形成电子陷阱,且电子陷阱能级的数量较多,其中空间电荷陷阱深度随外电场的增加逐渐变深;聚酰亚胺分子在引入极性基团OH~–后激发能降低,使得分子内部的电子变得容易被激发;电子与空穴的空间分离度随电场增加而降低,利于空穴与电子的复合而发出光子.     

Surface Planar Ion Chip for Linear Radio-Frequency Paul Traps

We propose a surface planar ion chip which forms a linear radio frequency Paul ion trap. The electrodes reside in the two planes of a chip, and the trap axis is located above the chip surface. Its electric field and potential distribution are similar to the standard linear radio frequency Paul ion trap. This ion trap geometry may be greatly meaningful for quantum information processing.     

A compact UHV package for microfabricated ion-trap arrays with direct electronic air-side access

We have demonstrated a new apparatus for operating microfabricated ion-trap arrays in a compact ultra-high-vacuum setup with excellent optical and electrical access. The approach uses conventional components, materials and techniques in a unique fashion. The microtrap chip is mounted on a modified ceramic leadless chip carrier, the conductors of which serve as the vacuum feedthrough. The chip carrier is indium-sealed to stainless-steel components to form vacuum seals, resulting in short electrical path lengths of ≤20 mm from the trap electrodes under vacuum to air side. The feedthrough contains conductors for the radio-frequency trap drive, as well as 42 conductors for DC electrodes. Vacuum pressures of ～1 × 10^?11 mbar are achieved, and ions have been confined and laser cooled in a microtrap chip. The apparatus enables accurate measurements of radio-frequency voltage amplitudes on the trap electrodes, yielding an excellent agreement between measured and modelled trap efficiencies. This feature is of significant use in establishing initial operation of new devices. The principle of the connectivity scheme presented here is applicable to larger ceramic chip carriers containing many more conductors.     

基于有限元方法的离子俘获装置模拟计算

利用有限元程序ANSYS,开展潘宁离子俘获装置的电场模拟计算。基于电场数据,结合Runge_Kutta_Fehlberg方法进行潘宁装置在多种模式下的离子俘获过程模拟工作,得到了准确的离子俘获结果。并对实际条件下具有偏离理想情况电极分布的俘获装置进行了优化计算及电场分析,同样实现了离子俘获过程的准确模拟。有限元方法用于离子俘获装置的电场计算以及后续离子俘获过程模拟流程的建立,为类似的电势阱离子俘获装置建造运行提供有效的技术支持。     

Planar ion chip design for scalable quantum information processing

We investigate a planar ion chip design with a two-dimensional array of linear ion traps for scalable quantum information processing. Qubits are formed from the internal electronic states of trapped ^40Ca^＋ ions. The segmented electrodes reside in a single plane on a substrate and a grounded metal plate separately, a combination of appropriate rf and DC potentials is applied to them for stable ion confinement. Every two adjacent electrodes can generate a linear ion trap in and between the electrodes above the chip at a distance dependent on the geometrical scale and other considerations. The potential distributions are calculated by using a static electric field qualitatively. This architecture provides a conceptually simple avenue to achieving the microfabrication and large-scale quantum computation based on the arrays of trapped ions.     

A Single-Layer Magnetic Atom Chip for Trapping an Array of Bose-Einstein Condensate

We propose a simple single-layer magnetic microtrap configuration which can trap an array of magneticallytrapped Bose-Einstein condensate. The configuration consists of two series of parallel wires perpendicular to each other and all of the crossing points are cut off for maintaining the uniformity of the current. We analyse the trapping potential, the position of trapping centres and the uniformity of the array of the traps. The trapping depth and trapping frequency with different parameters are also calculated. Lastly, the effect of the cut-off crossing points, dissipate power, chip production are introduced concisely.