Generation of broadly tunable picosecond mid-infrared laser and sensitive detection of a mid-infrared signal by parametric frequency up-conversion in MgO:LiNbO3 optical parametric amplifiers

Picosecond optical parametric generation and amplification in the near-infrared region within 1.361-1.656 μm and the mid-infrared region within 2.976-4.875 μm is constructed on the basis of bulk MgO：LiNbO 3 crystals pumped at 1.064 μm.The maximum pulse energy reaches 1.3 mJ at 1.464 μm and 0.47 mJ at 3.894 μm,corresponding to a pumpto-idler photon conversion efficiency of 25%.By seeding the hard-to-measure mid-infrared radiation as the idler in the optical parametric amplification and measuring the amplified and frequency up-converted signal in the near-infrared or even visible region,one can measure very week mid-infrared radiation with ordinary detectors,which are insensitive to mid-infrared radiation,with a very high gain.A maximum gain factor of about 7 脳 10 7 is achieved at the mid-infrared wavelength of 3.374 μm and the corresponding energy detection limit is as low as about 390 aJ per pulse.     

Synchronously pumped mid-infrared optical parametric oscillator with an output power exceeding 1?W at 4.5?��m

The generation of tunable mid-infrared picosecond laser radiation in a synchronously pumped optical parametric oscillator (OPO) based on periodically poled lithium niobate (PPLN) is reported. Numerical calculations were used to optimize the crystal length in order to balance the parametric gain and the absorption losses in the high-absorption regime of lithium niobate. Due to the numerical results, the system was systematically optimized for the mid-infrared output power. An output power of 1.1?W at 4.5???m and of more than 3?W at 3???m were achieved for 6-ps-long pulses with a repetition rate of 160?MHz and an M²<2.     

中红外波段地表发射率特性分析

陆表温度(LST)在地-气相互作用过程中扮演着重要的角色,是全球变化研究的关键参数。陆表发射率是陆表温度反演的关键输入参数之一。中红外谱区(3~5 μm)介于可见光-近红外谱区(0.38~2.5 μm)与热红外谱区(8~14 μm)之间,地物的发射率在该谱区表现出独特的光谱特性,可用于霜冻监测、矿物成分分析等研究。由于传感器在中红外谱区探测到的能量既有来自于地物自身发射的热辐射能量,又有反射的太阳辐射能量,这两部分的能量分离机理比较复杂,因此中红外谱区发射率特性分析的相关文献较少。本文针对单一均匀地表和具有混合像元的复杂地表计算了MODIS红外通道的有效发射率,发现通道有效发射率在单一均匀地表下与温度的耦合效应不强烈;但在复杂地表下,通道有效发射率与混合像元内的成分比例以及成分的地表温度具有耦合效应。在误差允许的范围内,混合像元的有效发射率可以忽略成分地表温度的影响。发射率误差对陆表温度反演精度的敏感性随着波长的变化而变化。在热红外波段,敏感性是其在中红外波段的2倍左右,说明利用中红外波段进行陆表温度反演具有一定的优势。     

基于差频中红外激光的痕量气体高分辨光谱检测研究

研究了基于差频光源的高分辨中红外激光光谱检测系统,差频中红外光源使用两台近红外半导体激光器作为种子光源,采用PPLN晶体作为非线性混频器件,结合准相位匹配技术实现了3.2~3.7 μm中红外相干光源输出,最大差频输出功率约为1 μW.以CH₄为例检验了系统的高分辨红外光谱检测特性,选择CH₄分子3 028.751 cm^-1 v₃基频吸收线作为分析谱线,10 cm光程的检测限为0.8 ppm.光谱数据分析表明,系统检测限主要受到标准具光学噪音的限制.     

Multifunctional Sulfur-Hyperdoped Silicon Nanoparticles with Engineered Mid-Infrared Sulfur-Impurity and Free-Carrier Absorption

Si nanoparticles (NPs), which are innovative promising light-harvesting components of thin-film solar cells and key-enabling biocompatible theranostic elements of infrared-laser and radiofrequency hyperthermia-based therapies of cancer cells in tumors and metastases, are significantly advanced in their near/mid-infrared band-to-band and free-carrier absorption via donor sulfur-hyperdoping during high-throughput facile femtosecond-laser ablative production in liquid carbon disulfide. High-resolution transmission electron microscopy and Raman microscopy reveal their mixed nanocrystalline/amorphous structure, enabling the extraordinary sulfur content of a few atomic percents and very minor surface oxidation/carbonization characterized by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. A 200-nm thick layer of the nanoparticles exhibits near−mid-infrared absorbance, comparable to that of the initial 380-micron thick n-doped Si wafer (phosphor-dopant concentration ≈10¹⁵ cm⁻³), with the corresponding extinction coefficient for the hyperdoped NPs being 4–7 orders higher over the broadband spectral range of 1–25 micrometers. Such ultimate, but potentially tunable mid-IR structured, multi-band absorption of various sulfur-impurity clusters and smooth free-carrier absorption are break through advances in mid-infrared (mid-IR) laser and radiofrequency (RF) hyperthermia-based therapies, as envisioned in the RF-heating tests, and in fabrication of higher-efficiency thin-film and bulk photovoltaic devices with ultra-broad (UV−mid-IR) spectral response.     

Fabrication and implementation of large-area organic light-emitting-diode devices on direct patterned backplanes

In this paper, we report on a new cost-effective fabrication technology for large-area organic light-emitting diode (OLED) devices that we have developed. We fabricated OLED lighting devices on a directly patterned backplane using a dry process without employing conventional photolithography patterning technology. The indium–tin-oxide (ITO) anode, metal cathode, insulator, and emissive organic layer patterns were all formed directly on the substrates during the sputtering and evaporation steps by using a shadow mask without using etching or lift-off methods. We fabricated and characterized green phosphorescent emission OLED devices with an emission area of 30 × 120 mm², based on backplanes formed by direct patterning technology. Application of direct patterning technology reduced the total number of processing steps to 4 from the 26 steps required by conventional photo-patterning technology, making it possible to reduce large-scale production cost. Although the process steps were reduced considerably, the typical characteristics were comparable to those of photo-patterned OLEDs. Furthermore, the lifetime of the OLEDs based on direct patterned backplane was observed to be 27,200 h, which is approximately 97% of the lifetime of conventionally patterned OLEDs.     

Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO₂ and Al₂O₃ high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO₂/Si and Al₂O₃/Si interface was studied using 45?MeV Li³⁺ ions. The devices were irradiated with Li³⁺ ions at various fluences ranging from 5?×?10⁹ to 5?×?10¹²?ions/cm². Capacitance–voltage and current–voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.     

Patterning and morphology of nonlinear optical Gd<Subscript>x</Subscript>Bi<Subscript>1-x</Subscript>BO<Subscript>3</Subscript> crystals in CuO-doped glass by YAG laser irradiation

Dots and lines consisting of nonlinear optical Gd_xBi_1-xBO₃ crystals were patterned on the surface of CuO-doped Gd₂O₃-Bi₂O₃-B₂O₃ glass by heat-assisted (200 °C) Nd:YAG laser irradiations with a wavelength of λ=1064 nm, where the laser energy absorbed by Cu²⁺ is converted to the local heating of the surrounding Cu²⁺. The surface morphology and orientation of crystals in the patterned lines were clarified from confocal scanning laser microscope observations and polarized micro-Raman scattering spectra. Crystal lines with periodic bumps (i.e., ladder-shape like lines) were patterned by laser irradiations with a power of 0.79 W and a scanning speed of 60 μm/s, and the orientation of Gd_xBi_1-xBO₃ crystals in the lines was proposed. The present study demonstrates that the combination of Cu²⁺ and continuous wave Nd:YAG laser with λ=1064 nm is effective in inducting crystallization of oxide glasses. The mechanism of laser-induced crystallization in glass has also been discussed. PACS 61.43.Fs; 42.70.Mp; 68.35.Bs; 78.30.-j; 79.20.Ds     

Generation of tunable infrared radiation in rubidium titanyl phosphate crystal for the optical measurement of number density, absorption cross-section of methane gas

Tunable near-infrared radiation has been generated in a rubidium titany1 phosphate (RTP) crystal by employing non-collinear difference-frequency mixing (DFM) technique. The input radiation sources are Nd:YAG laser radiation and its second harmonic pumped dye laser radiation. For the generation of 2.0 radiation, the maximum value of the conversion efficiency (quantum) obtained in the process is 49% from the dye (0.6945 μm) to the infrared (2.0 μm) radiation in the 7.9-mm-long crystal. The generated tunable mid-infrared radiation has been used to measure the number density, absorption cross-section and minimum detectable concentration of methane gas in its 2ν₃ band in a multi-pass cell at 30.075 Torr pressure. The number density and column density of the methane molecules are found to be 1.068×10¹⁸ cm⁻³ and 3.02×10²¹ cm⁻², respectively, whereas the minimum still-detectable concentration at 1.658 μm wavelength is estimated to be 4.523×10¹⁷/cm³.     

On-line monitoring of cyclotron target-gas output by means of tunable lead salt diode laser absorption spectroscopy

We demonstrate what is, to our knowledge, the first use of mid-infrared laser absorption spectroscopy for trace-gas measurements of cyclotron target outputs used for the generation of radioactive carbon-11 in positron emission tomography (PET). The spectrometer was based upon a liquid-nitrogen-cooled lead salt diode laser generating single-mode radiation in the wavenumber range of 2230–2240 cm^?1. The sample flowed to a multiple-pass optical cell with a total path length of 15.23 m and the laser radiation was detected by two liquid-nitrogen-cooled InSb photodetectors. We present the results of CO, N₂O and CO₂ measurements on PET trace cyclotron output and discuss future work on ¹¹CO and ¹¹CO₂ detection.     

Electron field emission from a patterned array of diamond-like carbon on anodic aluminum oxide template

A patterned array of diamond-like carbon (DLC) was grown on anodic aluminum oxide (AAO) template by filtered cathodic arc plasma (FCAP) technique at room temperature. The diameters of patterned array of DLC were ∼150 nm, and the patterned array density was estimated to ∼10⁹ cm⁻². A broad asymmetric band ranging from 1000 cm⁻¹ to 2000 cm⁻¹ was detected by Raman spectrum attributed to characteristic band of DLC. The fraction of sp³ bonded carbon atoms of the patterned array of DLC was measured by X-ray photoelectron spectrum (XPS) and the ratio was about 62.4%. Field emission properties of the patterned array of DLC were investigated. A low turn-on field of 3.4 V/μm at 10 μA/cm² with an emission area of 3.14 mm² was achieved. The results indicated that the electrons were emitted under both the effect of enhanced field because of the geometry and the work function of the DLC sample. Based on Fowler-Nordheim plot, the values of work function for the patterned array of DLC were estimated in range of 0.38 to 1.75 from a linearity plot.     

Observation of ferri-nonmagnetic boundary in CrPt3 line-and-space patterned media using a dark-field transmission electron microscope

Ion beam patterned CrPt₃ films were prepared by Kr⁺ ion irradiation at a dose of 2×10¹⁴ ions/cm² onto L1₂-ordered CrPt₃ whose surface was partially masked by electron beam patterned resists. Cross-sectional observation using transmission electron microscopy was carried out to study the patterning boundary of the CrPt₃ film. Dark-field imaging showed a distinct contrast between non-irradiated (L1₂ phase) and irradiated (A1 phase) regions. The transition width between the two phases was estimated to be about 5 nm, which agreed well with the value simulated by a transport ion in matter (TRIM) code simulation.     

Study of boron and molybdenum plasmas on multipulse interaction of femtosecond radiation with a target

Laser plasmas generated by femtosecond radiation on the surface of boron and molybdenum targets are investigated by the shadowgraph method. The modes of single-pulse and multipulse interaction of laser radiation with a target are compared. The occurrence of plasma bullets is discussed, which were observed on both single-pulse and multipulse interaction with the same area of a target. The wavefront velocities of expanding boron and molybdenum plasmas were measured to be 5 × 10⁴ and 6 × 10³ m s^?1, respectively. The electron density measured by interferometry using a time delay of 800 ps in a boron plasma excited by 795-nm radiation with an intensity of 10¹⁶ W cm^?2 amounted to 8 × 10¹⁹ cm^?3. The correlation between some specific features of the plasma and the generation of the 3/2 harmonic, observed on multipulse interaction of femtosecond radiation with a boron target, is discussed.     

Partly tunable mid-infrared NH3 laser

Using a continously tunable pulsed 20-atmosphere CO₂ laser as a pump source, we generated pulses of mid-infrared radiation, partly tunable in frequency intervals in the range between 200 and 900 cm^–1 via stimulated Raman scattering in gaseous ammonia. As a Raman cell we used a multiple pass cell. We observed for¹⁴NH₃ and¹⁵NH₃ laser lines at 52 different frequencies with 39 lines observed for the first time. Tuning ranges up to 150 GHz and peak powers of several MW were achieved. The quantum efficiency reached 40 %.     

Review on recent progress on mid-infrared fiber lasers

We present review on recent progress on mid-infrared fiber lasers. The relevant glass fiber host materials and different kinds of doped rare-earth ions are introduced. Lasers operating from 1.9 to 3 ??m in the rare-earth ions Tm³⁺, Ho³⁺, Er³⁺, and Dy³⁺ in the recent two years are discussed. Three interesting research issues, i.e., supercontinuum generation based on mid-infrared fiber laser, mid-infrared Raman fiber laser, and coherent beam combining in the mid-infrared wavelength band are classified and analyzed. Some discussions and prospective predictions are proposed at the end of this paper.     

Generation of broadly tunable picosecond mid-infrared laser and sensitive detection of a mid-infrared signal by parametric frequency up-conversion in MgO:LiNbO₃ optical parametric amplifiers

Picosecond optical parametric generation and amplification in the near-infrared region within 1.361-1.656 μm and the mid-infrared region within 2.976-4.875 μm is constructed on the basis of bulk MgO:LiNbO 3 crystals pumped at 1.064 μm.The maximum pulse energy reaches 1.3 mJ at 1.464 μm and 0.47 mJ at 3.894 μm,corresponding to a pumpto-idler photon conversion efficiency of 25%.By seeding the hard-to-measure mid-infrared radiation as the idler in the optical parametric amplification and measuring the amplified and frequency up-converted signal in the near-infrared or even visible region,one can measure very week mid-infrared radiation with ordinary detectors,which are insensitive to mid-infrared radiation,with a very high gain.A maximum gain factor of about 7 × 10 7 is achieved at the mid-infrared wavelength of 3.374 μm and the corresponding energy detection limit is as low as about 390 aJ per pulse.     

Dy3+掺杂Ge-Ga-S-CsI玻璃中红外发光特性研究

用熔融淬冷法制备了系列掺杂浓度的Dy³⁺:Ge-Ga-S-CsI硫卤玻璃样品,测试了样品拉曼光谱、折射率、吸收光谱、近红外及中红外荧光谱.应用Judd-Ofelt理论计算了Dy³⁺离子的强度参数 (Ω_i, i=2,4,6)、自发辐射跃迁概率(A)、荧光分支比(β)、以及辐射寿命(τ_rad)等光谱参数.研究了810 nm激光抽运下样品中红 关键词： 硫系玻璃 中红外发光 3+掺杂')" href="#">Dy³⁺掺杂 多声子弛豫     

Realization of wide-angle and wideband absorber using metallic and graphene-based metasurface for mid-infrared and low THz frequency

This article presents a study on mid-infrared and low-THz absorbers based on metallic and graphene metasurface. The absorber is constructed of a periodic array of patterned elements in patch form placed on a quarter-wavelength dielectric film terminated by a metallic reflector. A simple analytical circuit model equivalent to patch array is used for employing the matching impedance approach to realize the wideband absorber. This absorber is polarization independent for normal incident waves owing to its symmetric structure. Simulation and analytical circuit model results show that the graphene and metallic-based absorbers proposed in this paper can operate with an absorption value above 90% in a normalized bandwidth of 100% in the low terahertz (THz) and the mid-infrared regime, respectively. The proposed absorber is wide-angle for both TM and TE polarizations and polarization-insensitive for small incident angles.     

Narrow bandgap mid-infrared photodetectors based on InAsSbP quantum dots

The results of investigations of mid-infrared photodetectors based on InAsSbP quantum dot (QD) grown on InAs(100) substrate by modified liquid phase epitaxy are presented. The atomic force microscope measurements have shown that the surface density of grown QDs is (4–8) × 10⁹ cm^?2. Also, the morphology and crystalline quality of grown QDs are investigated by a scanning tunneling microscope. Photodetectors based on n-InAs(100) substrate with InAsSbP QDs on its surface were fabricated in the form of a photoconductor cell. The photoresponse spectrum extended up to 4 μm was observed. The optical properties of fabricated structures were investigated under He–Ne laser irradiation with wavelength of 1.15 μm. It was found that the relative surface conductance increases by 16% at power density of 0.15 W/cm². Capacitance hysteresis with maximal remnant capacitance of 2.17 nF at 10³ Hz was observed as well.     

Milliwatt-level mid-infrared (10.5-16.5 μm) difference frequency generation with a femtosecond dual-signal-wavelength optical parametric oscillator

We demonstrate the generation of mid-infrared radiation using a femtosecond dual-signal-wavelength optical parametric oscillator and difference frequency generation in an extracavity gallium selenide or silver gallium diselenide crystal. This system generates up to 4.3?mW of average mid-infrared power. Its spectra can be tuned to between 10.5?μm and 16.5?μm wavelength (952 cm^-1-606 cm^-1) with more than 50 cm^-1 spectral bandwidth. We demonstrate that the power and spectra of this system are temporally very stable.