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Multifunctional Sulfur-Hyperdoped Silicon Nanoparticles with Engineered Mid-Infrared Sulfur-Impurity and Free-Carrier Absorption
Authors:Alena A Nastulyavichus  Irina N Saraeva  Andrey A Rudenko  Roman A Khmelnitskii  Alexander L Shakhmin  Demid A Kirilenko  Pavel N Brunkov  Nikolay N Melnik  Nikita A Smirnov  Andrey A Ionin  Sergey I Kudryashov
Institution:1. Quantum Electronics Division, Lebedev Physical Institute, Leninskiy Prospect 53, Moscow, 119991 Russia;2. Quantum Electronics Division, Lebedev Physical Institute, Leninskiy Prospect 53, Moscow, 119991 Russia

Institute of Engineering Physics for Biomedicine, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Shosse 38, Moscow, 115409 Russia;3. Chemistry Department, Peter the Great Politechnic University, Politekhnicheskaya Street 29, St. Petersburg, 195251 Russia;4. Photonics Faculty, ITMO University, Kronverkskiy Prospect 49, St. Petersburg, 197101 Russia

Ioffe Institute, Politekhnicheskaya Street 26, St. Petersburg, 194021 Russia

Abstract:Si nanoparticles (NPs), which are innovative promising light-harvesting components of thin-film solar cells and key-enabling biocompatible theranostic elements of infrared-laser and radiofrequency hyperthermia-based therapies of cancer cells in tumors and metastases, are significantly advanced in their near/mid-infrared band-to-band and free-carrier absorption via donor sulfur-hyperdoping during high-throughput facile femtosecond-laser ablative production in liquid carbon disulfide. High-resolution transmission electron microscopy and Raman microscopy reveal their mixed nanocrystalline/amorphous structure, enabling the extraordinary sulfur content of a few atomic percents and very minor surface oxidation/carbonization characterized by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. A 200-nm thick layer of the nanoparticles exhibits near?mid-infrared absorbance, comparable to that of the initial 380-micron thick n-doped Si wafer (phosphor-dopant concentration ≈1015 cm?3), with the corresponding extinction coefficient for the hyperdoped NPs being 4–7 orders higher over the broadband spectral range of 1–25 micrometers. Such ultimate, but potentially tunable mid-IR structured, multi-band absorption of various sulfur-impurity clusters and smooth free-carrier absorption are break through advances in mid-infrared (mid-IR) laser and radiofrequency (RF) hyperthermia-based therapies, as envisioned in the RF-heating tests, and in fabrication of higher-efficiency thin-film and bulk photovoltaic devices with ultra-broad (UV?mid-IR) spectral response.
Keywords:biomedical applications  engineered mid-IR impurities  free-carrier absorption  optoelectronic applications  radiofrequency hyperthermia  sulfur-hyperdoped Si nanoparticles
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