Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Low-threshold diode-pumped CW passively mode-locked Nd:YVO4 laser

A low-threshold passively continuous-wave (CW) mode-locked Nd:YVO₄ solid-state laser was demonstrated by use of a semiconductor saturable absorber mirror (SESAM). The threshold for continuous-wave mode-locked is relatively low, about 2.15 W. The maximum average output power was 2.12 W and the optical to optical conversion efficiency was about 32%. The pulse width was about 15 ps with the repetition rate of 105 MHz.     

Self-Q-switched and mode-locked 946 nm Cr,Nd:YAG laser

A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 10⁶ W/cm². Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM₀₀-mode in the simultaneous self-Q-switched and mode-locked experiment.     

Reflective carbon nanotube as the saturable absorber for mode-locked 1064 nm laser

With a reflective single-walled carbon nanotube as the saturable absorber, a laser diode-pumped passively mode-locked Nd:YVO₄ laser at 1064 nm was realized for the first time. The pulse duration of 12 ps was produced with a repetition rate of 83.7 MHz. The peak power and the single pulse energy of the mode-locking laser were 1.28 kW and 15.4 nJ, respectively.     

A comparative study of continuous laser operation on the F3/2-I9/2 transitions of Nd:GdVO4 and Nd:YVO4 crystals

A comparative study of Nd:GdVO₄ and Nd:YVO₄ crystal lasers pumped by a fiber-coupled diode array has been conducted at the ⁴F_3/2-⁴I_9/2 transitions wavelengths of 912 nm and 914 nm, as well as when intracavity frequency-doubled to 456 nm and 457 nm, respectively. At the fundamental wavelength of 912 nm and second harmonic wavelength of 456 nm, maximum output powers from the Nd:GdVO₄ crystal laser were 7.85 W and 4.6 W at a pump power of 29 W. All the results obtained from Nd:GdVO₄ were superior to those of Nd:YVO₄, indicating that Nd:GdVO₄ is a more efficient laser crystal than Nd:YVO₄ for laser operation on the ⁴F_3/2-⁴I_9/2 transitions.     

Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd:YVO₄ laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%.     

Diode-pumped passively mode-locked Nd:CLNGG laser

Passive mode-locking of a diode-pumped Nd:CLNGG laser was demonstrated for the first time to our knowledge. The laser operated at a central wavelength of 1061.2 nm with a maximum average output power of 101 mW. The mode-locked pulses have pulse duration of 2.0 ps, a spectral bandwidth of 1.2 nm and a repetition rate of 88.4 MHz. The mode locking of the laser was enabled by a semiconductor saturable absorber mirror (SESAM).     

Self-Q-switched and mode-locked Nd,Cr:YAG laser with 6.52-W average output power

Simultaneous self-Q-switched and mode-locked have been demonstrated in a diode-pumped Nd,Cr:YAG laser. For the first time as we know, almost 100% modulation depth has been achieved at an intracavity intensity of 5.6 × 10⁵ W/cm². The maximum average output power of 6.52 W corresponding to a slope efficiency of 30% is obtained at 1064 nm. The laser produces high-quality pulses in a TEM₀₀-mode at the pump power of 16.5 W. The pulse duration of the mode-locked pulses is about 600 ps with 136 MHz repetition rate.     

494.5 nm generation by sum-frequency mixing of diode pumped neodymium lasers

We report a coherent radiation at 494.5 nm by intra-cavity sum-frequency generation of 912 nm Nd:GdVO₄ laser and 1080 nm Nd:CaYAlO₄ laser. Blue laser is obtained by using a doubly folded cavity, type-II critical phase matching KTP (KTiOPO₄) crystal sum-frequency mixing. With total pump power of 33 W (13.8 W pump power for 1080 nm Nd:CaYAlO₄ laser and 19.2 W pump power for 912 nm Nd:GdVO₄ laser), TEM₀₀ mode blue laser at 494.5 nm of 1.6 W is obtained. The power stability in 30 min is better than 3.5%.     

Compact 7.8-W 1-GHz-repetition-rate passively mode-locked TEM00 Nd:YVO4 laser under 880 nm diode direct-in-band pumping

We demonstrate a compact high-power passively mode-locked TEM₀₀ Nd:YVO₄ laser with 1 GHz repetition rate by 880 nm diode direct-in-band pumping. At the absorbed pump power of 19.9 W, a stable mode-locked output power of 7.8 W was obtained with the pulse width of 21.4 ps and a beam quality factor of M² < 1.5, corresponding to an optical-optical conversion efficiency of 39.2%.     

800 mW/1484 nm highly efficient two-cascaded phosphosilicate Raman fiber laser pumped by Nd:YVO4 solid-state laser

Using 1064 nm CW Nd:YVO₄ solid-state laser as a pump, 1-km phosphosilicate fiber and cascaded cavities with two pairs of fiber Bragg grating mirrors for 1239 and 1484 nm, we obtained a CW 800 mW/1484 nm Raman fiber laser (RFL) for an actual incident pump power of about 2 W (Nd:YVO₄ power of 6.90 W). The conversion efficiency is as high as 40%. To the best of our knowledge, this is the highest conversion efficiency of RFL pumped by solid-state laser. The output power instability at 1484 nm in half an hour is less than 3%. In addition, the numerical simulations are also performed. Good agreement between the results of numerical simulation and the results of the experiment has been demonstrated.     

Passive stabilization of a passively mode-locked Nd:GdVO4 laser by inverse saturable absorption

A diode-pumped Nd:GdVO₄ laser mode-locked by a semiconductor saturable absorber and output coupler (SESAOC) is passively stabilized to suppress Q-switched mode-locking. A phase mismatched BIBO second-harmonic generation (SHG) crystal is used for passive stabilization. The continuous wave mode-locking (CWML) threshold is reduced and the pulse width is compressed. The pulse width is 6.5 ps as measured at the repetition rate of 128 MHz.     

Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO₄ laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 μJ, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz.     

Diode-pumped passively mode-locked Nd:GdVO4 laser at 912 nm

We have demonstrated the stable mode-locked Nd:GdVO₄ laser operating on the ⁴F_3/2-⁴I_9/2 transition at 912 nm. With a four-mirror-folded cavity and a semiconductor saturable absorber mirror for passive mode-locking, we have gained 6.5 ps laser pulses at a repetition rate of 178 MHz. The laser is diode-end-pumped, and the total output power from the out coupler is 128 mw at an incident pump power of 19.7 W.     

41 mW high average power picosecond 177.3 nm laser by second-harmonic generation in KBBF

We report on the generation of high average power, high repetition rate, and picosecond (ps) deep-ultraviolet (DUV) 177.3 nm laser. The DUV laser is produced by second-harmonic generation of a frequency-tripled mode-locked Nd: YVO₄ laser (<15 ps, 80 MHz) with KBBF nonlinear crystal. The influence of different fundamental beam diameters on DUV output power and KBBF-SHG conversion efficiency are investigated. Under the 355 nm pump power of 7.5 W with beam diameter of 145 μm, 41 mW DUV output at 177.3 nm is obtained. To our knowledge, this is the highest average power for the 177.3 nm laser. Our results provide a power scaling by three times with respect to previous best works.     

Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber

We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW.     

High energy and short pulses generation by Nd:yttrium aluminum garnet laser mode-locked using frequency-doubling nonlinear mirror

The generation of laser pulses with energies of >40 mJ at 25 Hz and durations variable from 15 ps to 45 ps using an Nd:yttrium aluminum garnet laser mode-locked with a Stankov nonlinear mirror is demonstrated. This laser is used to pump an optical parametric generator-amplifier, which is tunable in the visible spectral range.     

Growth and characterization of Nd:Lu3ScxGa5 − xO12 series laser crystals

A new series Nd:Lu₃Sc_xGa_5 − xO₁₂ (x = 0.5, 0.8, 1, 1.2 and 1.5) laser crystals have been successfully grown by the optical floating zone method. Their absorption and luminescence spectra were measured at room temperature and spectral parameters were systemically calculated using Judd-Ofelt (JO) theory. The fluorescence τ_f lifetimes were experimentally measured and compared with the theoretical results. Diode-pumped continuous-wave (CW) laser performance at 1.06 μm with mixed crystals was demonstrated. The influence of different x values on laser performance and spectral parameters was also discussed. All the results show that Nd:Lu₃Sc_xGa_5 − xO₁₂ series crystals should be suitable for laser application.     

Experiments of all-optical switching due to cross-phase modulation in fiber grating coupler by lock-in amp. detection scheme

We report results of experiments examining cross-phase modulation effect on fiber grating coupler (FGC). All-optical switching are observed in both cases of high pump pulses emitted from high-power Nd:YAG laser and mode-locked EDF laser. Based on coherent detection using a lock-in amplifier, the red-shift of the Bragg wavelength for a FGC was estimated to be 0.04-0.06 nm/1.5-1.7 kW peak power of EDF pump light at 1.55 μm. To avoid mixture of pump pulse and signal light at 1.55 μm, we have also performed the experiment using high power Nd:YAG laser as a pump power. For a Nd:YAG laser, the red-shift of Bragg wavelength is estimated to be 0.06 nm at maximum pump power of 2.1 kW. A simple model for the proposed detection scheme is given and the resultant red-shift is analyzed numerically.     

Simultaneous dual-wavelength laser operation at 1342 and 946 nm in two laser crystals and their sum-frequency mixing

A sum-frequency yellow-green laser at 554.9 nm is reported by this paper, 946 nm wavelength is obtained from ⁴F_3/2-⁴I_9/2 transition in Nd:YAG and 1342 nm wavelength is obtained from ⁴F_3/2-⁴I_13/2 transition in Nd:YVO₄. Using a doubly folded-cavity type-II critical phase matching KTP crystal intra cavity to make 946 nm laser from Nd:YAG and 1342 nm laser from Nd:YVO₄ frequency summed, with incident pumped power of 30 W in Nd:YAG and 20 W in Nd:YVO₄, TEM₀₀ mode yellow-green laser at 554.9 nm at 1.15 W is obtained and its M² factor is less than 1.22. The experimental results show that the Nd:YAG and Nd:YVO₄ crystals intra-cavity sum-frequency mixing is an effective method for yellow-green laser and it can be applied to other two laser crystals to obtain more all-solid-state lasers with different wavelengths.