Porous Si/TiO2 nanowire photoanode for photoelectric catalysis under simulated solar light irradiation

Porous Si/TiO₂ nanowire photoanodes were prepared by a combination of hydrothermal synthesis and metal‐assisted chemical etching. Characterization of samples was conducted using scanning electron microscopy and X‐ray diffraction, the results showing that a porous Si/TiO₂ heterojunction structure was synthesized. Diffuse reflection spectra show that the porous Si/TiO₂ nanowire photoanodes have a strong absorption. Photocurrent measurement shows that the photocurrent of the porous Si/TiO₂ nanowire photoanodes at 6 h is higher than that of others in the measuring region. The photoelectric catalysis (PEC) activities of porous Si/TiO₂ nanowire photoanodes were evaluated in degradation experiments of methylene blue under simulated solar light irradiation, and the sample at 6 h shows the highest PEC activity. Meanwhile, the PEC activity of the porous Si/TiO₂ nanowire photoanode is higher than that of the single direct photocatalysis process or electric catalysis. The mechanism of the PEC of the porous Si/TiO₂ nanowire photoanodes has been explained.     

Time-resolved photoluminescence spectra of Si species encapsulated in zeolite supercages

Photoluminescence (PL) spectra of Si species encapsulated in zeolite supercages are studied. It is reported that the chained Si species terminated partially with phenyl groups and with some unsaturated bonds are formed in zeolite supercages by the reaction with phenylsilane and they show PL around 4 eV (J. Phys. Chem. 2004, 108, 2501-2508). In the present paper they are reduced with hydrogen to prepare Si chained species terminated and saturated with hydrogen atoms. The PL spectra are deconvoluted to be four components at 1.9, 2.2, 2.6, and 3.7 eV, which can tentatively be assigned to Si nanocrystals and Si quantum wires in addition to defects in SiO2 and uncontrolled organic impurities in zeolite, respectively. At elevated temperatures the Si quantum wires in zeolite pores seem to change the Si nanocrystals with the size larger than that of the zeolite pore diameter. It is the first case in which the PL decay lifetime of oxygen vacancies in zeolite can be detected to be quite short to be about 16 ns. The detected lifetimes of Si quantum wires are significantly very short, about 12 ns. The Si species encapsulated zeolite is solvated with hydrofluoric acid solution to separate the Si quantum wires by dissolving zeolite lattice. The Si quantum wires in the HF solution show intense PL spectra peaked at 2.33 eV and broad UV spectra around 2.8-3.5 eV. They will have different shapes and lengths. The HF solvated zeolite shows still PL spectra characteristic of oxygen vacancies and the absorption edge at 3.6 eV. The result means that zeolite lattice is solvated in HF solution as clusters with a band gap of 3.6 eV and they can still have some oxygen vacancies. Oxygen vacancies situate about 1.0 eV below the zeolite conduction band minimum, and the absorbed energy can be dissipated as PL between the valence band maximum and the oxygen vacancies. It is concluded that the excitation photon energy can be absorbed in zeolite and the Si quantum wires and then the absorbed energies are competitively relaxed in zeolite and the Si quantum wires.     

Li2B12Si2: the first ternary compound in the system Li/B/Si: synthesis, crystal structure, hardness, spectroscopic investigations, and electronic structure

We present the synthesis, crystal structure, hardness, IR/Raman and UV/Vis spectra, and FP-LAPW calculations of the electronic structure of Li(2)B(12)Si(2), the first ternary compound in the system Li/B/Si. Yellow, transparent single crystals were synthesized from the elements in tin as solvent at 1500 degrees C in h-BN crucibles in arc-welded Ta ampoules. Li(2)B(12)Si(2) crystallizes orthorhombic in the space group Cmce (no. 64) with a=6.1060(6), b=10.9794(14), c=8.4050(8) A, and Z=4. The crystal structure is characterized by a covalent network of B(12) icosahedra connected by Si atoms and Li atoms located in interstitial spaces. The structure is closely related to that of MgB(12)Si(2) and fulfils the electron-counting rules of Wade and Longuet-Higgins. Measurements of Vickers (H(V)=20.3 GPa) and Knoop microhardness (H(K)=20.4 GPa) revealed that Li(2)B(12)Si(2) is a hard material. The band gap was determined experimentally and calculated by theoretical means. UV/Vis spectra revealed a band gap of 2.27 eV, with which the calculated value of 2.1 eV agrees well. The IR and Raman spectra show the expected oscillations of icosahedral networks. Theoretical investigations of bonding in this structure were carried out with the FP-LAPW method. The results confirm the applicability of simple electron-counting rules and enable some structural specialties to be explained in more detail.     

Photoassisted tuning of silicon nanocrystal photoluminescence

Silicon is a rather inefficient light emitter due to the indirect band gap electronic structure, requiring a phonon to balance the electron momentum during the interband transition. Fortunately, momentum requirements are relaxed in the 1-5 nm diameter Si crystals as a result of quantum confinement effects, and bright photoluminescence (PL) in the UV-vis range is achieved. Photoluminescent Si nanocrystals along with the C- and SiC-based nanoparticles are considered bioinert and may lead to the development of biocompatible and smaller probes than the well-known metal chalcogenide-based quantum dots. Published Si nanocrystal production procedures typically do not allow for the fine control of the particle size. An accepted way to make the H-terminated Si nanocrystals consists of anodic Si wafer etching with the subsequent breakup of the porous film in an ultrasound bath. Resulting H-termination provides a useful platform for further chemical derivatization and conjugation to biomolecules. However, a rather polydisperse mixture is produced following the ultrasonic treatment, leading to the distributed band gap energies and the extent of surface passivation. From the technological point of view, a homogeneous nanoparticle size mixture is highly desirable. In this study, we offer an efficient way to reduce the H-terminated Si nanocrystal diameter and narrow size distribution through photocatalyzed dissolution in a HF/HNO3 acid mixture. Si particles were produced using the lateral etching of a Si wafer in a HF/EtOH/H2O bath followed by sonication in deaerated methanol. Initial suspensions exhibited broad photoluminescence in the red spectral region. Photoassisted etching was carried out by adding the HF/HNO3 acid mixture to the suspension and exposing it to a 340 nm light. Photoluminescence and absorbance spectra, measured during dissolution, show the gradual particle size decrease as confirmed by the photoluminescence blue shift. The simultaneous narrowing of the photoluminescence spectral bandwidth suggests that the dissolution rate varies with the particle size. We show that the Si nanoparticle dissolution rate depends on the amount of light adsorbed by the particle and accounts for the etching rate variation with the particle size. Significant improvement in the PL quantum yield is observed during the acid treatment, suggesting improvement in the dangling bond passivation.     

Chemical surface passivation of 3C‐SiC nanocrystals: A first‐principle study

The effect of the chemical surface passivation, with hydrogen atoms, on the energy band gap of porous cubic silicon carbide (PSiC) was investigated. The pores are modeled by means of the supercell technique, in which columns of Si and/or C atoms are removed along the [001] direction. Within this supercell model, morphology effects can be analyzed in detail. The electronic band structure is performed using the density functional theory based on the generalized gradient approximation. Two types of pores are studied: C‐rich and Si‐rich pores surface. The enlargement of energy band gap is greater in the C‐rich than Si‐rich pores surface. This supercell model emphasizes the interconnection between 3C‐SiC nanocrystals, delocalizing the electronic states. However, the results show a clear quantum confinement signature, which is contrasted with that of nanowire systems. The calculation shows a significant response to changes in surface passivation with hydrogen. The chemical tuning of the band gap opens the possibility plenty applications in nanotechnology. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem 110:2455–2461, 2010     

硅晶片上超薄氧化硅层厚度纳米尺寸效应的XPS研究

用X射线光电子能谱(XPS)测定了一系列厚度经过国际比对准确已知的硅晶片上的超薄(1.45nmd7.2nm)氧化硅膜的Si2p电子能谱和价带谱.结果表明:SiO2膜厚d2nm时,Si2p结合能最低,其原因可归结于此时光电离空穴既有来自SiO2中的原子极化对空穴的原子外弛豫,也有来自衬底Si的电荷移动对空穴的屏蔽(有效屏蔽距离大约是(2.5±0.6)nm);当d3nm时Si2p结合能增大,此时只有来自SiO2的原子外弛豫,d较小者的Si2p结合能较高.SiO2的价带电子结构也与其厚度纳米尺寸效应有关:当d2nm时价带中SiO2的O2p非成键电子峰的相对强度较强,O2p—Si3p和O2p—Si3s成键电子峰较弱.     

Surface-enhanced Raman scattering of single- and few-layer graphene by the deposition of gold nanoparticles

Surface-enhanced Raman scattering (SERS) of graphene on a SiO(2)(300 nm)/Si substrate was investigated by depositing Au nanoparticles using thermal evaporation. This provided a maximum enhancement of 120 times for single-layer graphene at 633 nm excitation. SERS spectra and scan images of single-layer and few-layer graphene were acquired. Single-layer graphene provides much larger SERS enhancement compared to few-layer graphene, while in single-layer graphene the enhancement of the G band was larger than that of the 2D band. Furthermore, the D bands were identified in the SERS spectra; these bands were not observed in a normal Raman spectrum without Au deposition. Appearance of the D band is ascribed to the considerable SERS enhancement and not to an Au deposition-induced defect. Lastly, SERS enhancement of graphene on a transparent glass substrate was compared with that on the SiO(2)(300 nm)/Si substrate to exclude enhancement by multiple reflections between the Si substrate and deposited Au nanoparticles. The contribution of multiple reflections to total enhancement on the SiO(2)(300 nm)/Si substrate was 1.6 times out of average SERS enhancement factor, 71 times.     

Hard X-ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

We present a study of buried GaP/Si(001) heterointerfaces by hard X-ray photoelectron spectroscopy. Well-defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested.     

Interfacial bonding of gold nanoparticles on a H-terminated Si(100) substrate obtained by electro- and electroless deposition

Dome-shaped gold nanoparticles (with an average diameter of 10.5 nm) are grown on H-terminated Si(100) substrates by simple techniques involving electro- and electroless deposition from a 0.05 mM AuCl3 and 0.1 M NaClO4 solution. XPS depth profiling data (involving Au 4f core-level and valence band spectra) reveal for the first time the formation of gold silicide at the interface between the Au nanoparticles and Si substrate. UV-visible diffuse reflectance spectra indicate that both samples have surface plasmon resonance maxima at 558 nm, characteristic of an uniform distribution of Au nanoscale particles of sufficiently small size. Glancing-incidence XRD patterns clearly show that the deposited Au nanoparticles belong to the fcc phase, with the relative intensity of the (220) plane for Au nanoparticles obtained by electroless deposition found to be notably larger than that by electrodeposition.     

Formation of indium nitride nanorods within mesoporous silica SBA-15

We report the first formation of arrays of InN nanorods inside the nanoscale channels of mesoporous silica SBA-15. In(NO3)3 dissolved in methanol was incorporated into SBA-15 powder without prior pore surface functionalization. Formation of InN nanorod arrays was carried out by ammonolysis at 700 degrees C for 8 h. The final products have been characterized by FT-IR spectra, (29)Si MAS NMR spectra, Raman spectra, XRD patterns, TEM images, nitrogen adsorption-desorption isotherm measurements, and optical spectroscopy. The freestanding InN nanorods observed after silica framework removal with HF solution show diameters of 6-7.5 nm and lengths of 25-50 nm. Formation of a trace amount of In2O3 was also verified. The InN nanorods exhibit a broad band centered at around 550-600 nm, and a band gap energy of 1.5 eV was determined. No light absorption in the near-IR region was measured. The nanorods give a weak emission band centered at around 600 nm. These optical properties are believed to be related to the possible incorporation of oxygen during InN nanorod synthesis.     

Ab initio simulation of the vibrationally resolved photoelectron spectrum of Si3-

Electron photodetachment spectra provide a wealth of information about the electronic and vibrational level structures of neutral molecules that form stable anions. Experiments carried out for the smallest polyatomic silicon cluster anion (Si3-+hupsilon-->Si3*+e-) show vibrational progressions in six observed electronic bands (X-E) of the neutral species. The authors have performed ab initio calculations using the MRCI+D/aug-cc-pVQZ level for the corresponding electronic states followed by variational calculations of the vibronic levels associated with these adiabatic potential energy surfaces. In contrast to previous approaches, the authors treat the nonadiabatic dynamics on the potential energy surfaces, which allows for a vastly improved reproduction of the experimental level structure and a corrected assignment for band A.     

Unidirectional Pt silicide nanowires grown on vicinal Si(100)

We investigated the structure and electronic properties of unidirectional Pt(2)Si nanowires (NWs) grown on a Si(100)-2 degrees off surface. We found that Pt(2)Si NWs were formed along the step edges of the Si(100)-2 degrees off surface with c(4x6) reconstructions that occurred on the terraces of Si(100) using scanning tunneling microscopy and the structure of formed NWs was found to be Pt(2)Si by core-level photoemission spectroscopy. Moreover, we confirmed that the electronic band structures of the NWs along the NW direction are different from those perpendicular to the NWs and the surface state induced by the Pt(2)Si NWs was observed with a small density of state using the angle-resolved photoemission spectra.     

Highly luminescent silicon nanocrystals with discrete optical transitions.

A new synthetic method was developed to produce robust, highly crystalline, organic-monolayer passivated silicon (Si) nanocrystals in a supercritical fluid. By thermally degrading the Si precursor, diphenylsilane, in the presence of octanol at 500 degrees C and 345 bar, relatively size-monodisperse sterically stabilized Si nanocrystals ranging from 15 to 40 A in diameter could be obtained in significant quantities. Octanol binds to the Si nanocrystal surface through an alkoxide linkage and provides steric stabilization through the hydrocarbon chain. The absorbance and photoluminescence excitation (PLE) spectra of the nanocrystals exhibit a significant blue shift in optical properties from the bulk band gap energy of 1.2 eV due to quantum confinement effects. The stable Si clusters show efficient blue (15 A) or green (25-40 A) band-edge photoemission with luminescence quantum yields up to 23% at room temperature, and electronic structure characteristic of a predominantly indirect transition, despite the extremely small particle size. The smallest nanocrystals, 15 A in diameter, exhibit discrete optical transitions, characteristic of quantum confinement effects for crystalline nanocrystals with a narrow size distribution.     

Macroporous-mesoporous C-,S-,N-doped titania microspheres via the polyHIPE microspheres templates

Doping and increasing specific surface area by forming highly porous structures are two effective ways to enhance the photocatalytic performances of TiO_2 particles.He re for the first time,we report a new facile method to prepare the macroporous-mesoporous C-,S-,N-doped TiO_2(C/S/N-TiO_2) microspheres via polyHIPE microsphe res as templates.The chemical and crystalline structure s of these hierarchical porous TiO_2 microspheres are analyzed with FTIR,XPS,EDS,and XRD.The macroporous-mesoporous structures are confirmed with SEM observation and BET analysis.UV-vis DRS spectra analysis shows that the band gaps of C doped TiO_2,C/N doped TiO_2,C/S doped TiO_2 and C/S/N doped TiO_2 are estimated to be 3.07,3.01,2.94 and 2.81 eV,respectively,which are significantly narrower than that of TiO_2 nanoparticles(3.23 eV).Photoluminescence spectra demonstrate that the recombination of electrons and holes in these macroporous-mesoporous TiO_2 microspheres is also suppressed.The hierarchical porous C/S/N-TiO_2 microspheres show high visible-light catalytic efficiency and excellent cycling stability to degrade RhB dye.     

Luminescence in Organic Silicons Prepared from Organic Precursors in Plasma Discharges

Summary.  The photoluminescence of plasma-prepared polysilanes during the change from linear 1D Si chains to an amorphous 3D Si network was studied. The excitonic absorption band with a maximum at 353 nm in 1D Si experiences a blue shift and broadening upon introduction of branching and networking defects. With the gradual transition from 1D to 3D structure, an extensive redistribution of oscillator intensity along the absorption edge, accompanied by a decrease of the resolution of the σ-σ^* band, was observed. In the short wavelength region of the excitation spectra there is an enormous increase of excitonic emission at 328 nm. This effect is tentatively attributed to the excitation of the phenyl group or to the phenyl-silicon bond as confirmed by effusion spectra of the phenyl species. Received July 10, 2000. Accepted (revised) September 8, 2000     

Super water- and oil-repellent surfaces on intrinsically hydrophilic and oleophilic porous silicon films

We demonstrate that porous Si films fabricated by a convenient gold-assisted electroless etching process, which possess a hierarchical porous structure consisting of micrometer-sized asperities superimposed onto a network of nanometer-sized pores, are able to induce a superhydrophobic phenomenon on an intrinsically hydrophilic hydrogen-terminated Si surface and a superoleophobic phenomenon on an intrinsically oleophilic self-assembled monolayer-coated Si surface. Through comparison with porous Si films consisting of vertically aligned straight pores, which are hydrophilic and oleophilic, we show that an overhang structure resulting from the hierarchical porous structure is essential to preventing water and oil from penetrating the texture of the films and inducing the observed macroscopic superhydrophobic and superoleophobic phenomena.     

Time-dependent density functional theory predictions of the vertical excitation energies of silanones as models for the excitation process in porous silicon

Time-dependent density functional theory calculations with a proper treatment of the asymptotic form of the exchange-correlation potential have been performed on R(R')Si=O to predict vertical excitation energies. The species R(R')Si=O is used as a model for the binding of the -(R)Si=O chromophore to a porous silicon surface. The calculated vertical excitation energies are substantially lower than those determined previously and show that vertical excitation of the lone chromophore is possible for all types of substituents including electronegative ones with KrF laser excitation in contrast to other predictions. If the substituents are electropositive, the chromophore can also be excited by a nitrogen laser. These results, in concert with the effect of the porous silicon surface on the R(R')Si=O excited states, confirm our previous explanation of the photoluminescence of porous silicon as being due to the presence of Si=O chromophores and provide new insights into the photoexcitation process. The results show that the differences in the vertical and adiabatic excitation energies are strongly dependent on whether the substituents are electronegative or electropositive with the former leading to larger differences and the latter leading to smaller differences. The results for the energy differences are explained in terms of the changes in the Si=O bond length on vertical excitation and on the changes in bond angles, which are related to the ability of the Si center in the excited state to undergo an inversion process.     

Development of two new approaches for preparation of zirconium silicate systems at low temperature

Homogeneous and stable zirconium silicate sols and gels were prepared via the sol-gel process. Two synthesis procedures were explored based on using acetylacetone (acac) and acetic acid (HOAc) as modifying agents. The homogeneous sols were characterized by small angle x-ray scattering (SAXS) and ²⁹Si NMR in the early stages of polymerization. Zr addition to the Si sols caused significant modification of the extent of condensation of the Si species as determined by ²⁹Si NMR. TGA and DTA of the two types of xerogels revealed differences attributed to the modifying agents. Fourier Transform Infrared (FTIR) spectroscopy of acac xerogels showed a band at 1600 cm^–1, assigned to acac bonded to Zr. FTIR spectra of the HOAc xerogels were consistent with OAc bidentate ligands bonded to Zr. UV-Vis spectroscopy results of the HOAc2.3 thin film presented a band assigned to OAc singly coordinated to Zr.     

Microstructure-controlled aerosol-gel synthesis of ZnO quantum dots dispersed in SiO2 nanospheres

ZnO quantum dots dispersed in a silica matrix were synthesized from a TEOS:Zn(NO(3))(2) solution by a one-step aerosol-gel method. It was demonstrated that the molar concentration ratio of Zn to Si (Zn/Si) in the aqueous solution was an efficient parameter with which to control the size, the degree of agglomeration, and the microstructure of ZnO quantum dots (QDs) in the SiO(2) matrix. When Zn/Si ≤ 0.5, unaggregated quantum dots as small as 2 nm were distributed preferentially inside SiO(2) spheres. When Zn/Si ≥ 1.0, however, ZnO QDs of ～7 nm were agglomerated and reached the SiO(2) surface. When decreasing the ratio of the Zn/Si, a blue shift in the band gap of ZnO was observed from the UV/Visible absorption spectra, representing the quantum size effect. The photoluminescence emission spectra at room temperature denoted two wide peaks of deep-level defect-related emissions at 2.2-2.8 eV. When decreasing Zn/Si, the first peak at ～2.3 eV was blue-shifted in keeping with the decrease in the size of the QDs. Interestingly, the second visible peak at 2.8 eV disappeared in the surface-exposed ZnO QDs when Zn/Si ≥ 1.0.