Effect of swift (∼100 MeV) heavy ion irradiation on surface morphology and electronic transport in Fe film on Si substrate

Fe film (∼50 nm) have been deposited on pSi substrate by electron beam evaporation technique. The bilayers have been irradiated by 100 MeV Fe⁷⁺ ions having fluences of 1 × 10¹³, 1 × 10¹⁴ and 5 × 10¹⁴ ions cm⁻². SEM study of the unirradiated devices show surface modifications having a annular structures. From XRD study of the bilayer, it is observed that grain size has reduced from 70 to 25 nm after the irradiation for a fluence of 1 × 10¹⁴ ions cm⁻². Moreover electronic transport data of the bilayer show practically no effect on the current flow for a fluence of 1 × 10¹³ ions cm⁻² irradiation whereas for 1 × 10¹⁴ ions cm⁻² fluence, there is very significant change in current flow (by two orders in magnitude) across the bilayer. However, for a higher fluence of irradiation 5 × 10¹⁴ ions cm⁻², the bilayer becomes highly resistive. It has been found from the above observations that the fluence of 1 × 10¹⁴ ions cm⁻² of swift heavy ion irradiation is a optimum fluence.     

Polyethylene terephthalate (PET) bulk film analysis using C60, Au3, and Au primary ion beams

The damage characteristics of polyethylene terephthalate (PET) have been studied under bombardment by C₆₀⁺, Au₃⁺ and Au⁺ primary ions. The observed damage cross-sections for the three ion beams are not dramatically different. The secondary ion yields however were significantly enhanced by the polyatomic primary ions where the secondary ion yield of the [M + H]⁺ is on average 5× higher for C₆₀⁺ than Au₃⁺ and 8× higher for Au₃⁺ than Au⁺. Damage accumulates under Au⁺ and Au₃⁺ bombardment while C₆₀⁺ bombardment shows a lack of damage accumulation throughout the depth profile of the PET thick film up to an ion dose of ∼1 × 10¹⁵ ions cm⁻². These properties of C₆₀⁺ bombardment suggest that the primary ion will be a useful molecular depth profiling tool.     

Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

Metal-semiconductor diode of Au/n-GaAs is studied under the irradiation of swift heavy ion (SHI) beam (80 MeV ¹⁶O⁶⁺), using in situ current-voltage characterization technique. The diode parameters like ideality factor, barrier height, and leakage current are observed to vary with irradiation fluence. Significantly, the diode performance improves at a high fluence of 2 × 10¹³ ions cm⁻² with a large decrease of reverse leakage current in comparison to the original as deposited sample. The Schottky barrier height (SBH) also increases with fluence. At a high irradiation fluence of 5 × 10¹³ ions cm⁻² the SBH (0.62 ± 0.01 eV) is much larger than that of the as deposited sample (0.55 ± 0.01 eV). The diode parameters remain stable over a large range of irradiation up to fluence of 8 × 10¹³ ions cm⁻². A prominent annealing effect of the swift ion beam owing to moderate electronic excitation and high ratio of electronic energy loss to the nuclear loss is found to be responsible for the improvement in diode characteristics.     

Evolution of surface morphology of NiO thin films under swift heavy ion irradiation

NiO nanoparticle thin films grown on Si substrates were irradiated by 107 MeV Ag⁸⁺ ions. The films were characterized by glancing angle X-ray diffraction and atomic force microscopy. Ag ion irradiation was found to influence the shape and size of the nanoparticles. The pristine NiO film consisted of uniform size (∼100 nm along major axis and ∼55 nm along minor axis) elliptical particles, which changed to also of uniform size (∼63 nm) circular shape particles on irradiation at a fluence of 3 × 10¹³ ions cm⁻². Comparison of XRD line width analysis and AFM data revealed that the particles in the pristine films are single crystalline, which turn to polycrystalline on irradiation with 107 MeV Ag ions.     

MeV Au ion induced modifications at Co/Si interface

We report on room temperature MeV Au ion induced modifications at the Co/Si interfaces. Nanometers size thin film of Co and Si were grown by ultra high vacuum (UHV) electron beam evaporation technique on Si(1 1 1) surface and were irradiated by 1.5 MeV Au²⁺ ions at a fluence of 5 × 10¹⁴ ions cm⁻². High-resolution transmission electron microscopy (HRTEM) along with energy filter imaging technique has been employed to study the formation of Co-Si alloy at the interface. Formation of such surface alloy has been discussed in the light of ion-matter interaction in nanometer scale regime.     

Ar irradiation of Si nanocrystal-doped SiO2: Evolution of photoluminescence

We report the evolution of photoluminescence (PL) of Si nanocrystals (nc-Si) embedded in a matrix of SiO₂ during Ar⁺ ion bombardment. The integrated intensity of nc-Si PL falls down drastically before the Ar⁺ ion fluence of 10¹⁵ ions cm⁻², and then decreases slowly with the increasing ion fluence. At the meantime, the PL peak position blueshifts steadily before the fluence of 10¹⁵ ions cm⁻², and then changes in an oscillatory manner. Also it is found that the nc-Si PL of the Ar⁺-irradiated sample can be partly recovered after annealing at 800 °C in nitrogen, but can be almost totally recovered after annealing in oxygen. The results confirm that the ion irradiation-induced defects are made up of oxygen vacancies, which absorb light strongly. The oscillatory peak shift of nc-Si can be related to a size-distance distribution of nc-Si in SiO₂.     

Swift heavy ion induced photoluminescence studies in Aluminum oxide

Aluminum oxide, a promising material for high temperature applications, is synthesized by combustion route and characterized by X-ray diffraction technique. Photoluminescence of aluminum oxide bombarded with 120 MeV swift Au⁹⁺ ions have been studied at room temperature. The observed PL emission with peak at ～420 nm is attributed to F-center while the two more weak emissions with peaks at ～482 and ～525 nm are attributed to aggregates of F-centers. It is found that PL intensity increases with increase in Au⁹⁺ ion fluence up to ～1×10¹³ ions cm^?2 and thereafter it reaches saturation. The Fourier transform Infrared spectroscopy results show the destruction of Al?O?H bonds whereas the XRD results indicate the surface amorphization of Al₂O₃.     

Effect of Nd concentration on structural and optical properties of Nd:Y2O3 transparent ceramic

Y₂O₃ transparent ceramics with different Nd concentration (0.1-7.0at%) were fabricated using ZrO₂ as additive. All the samples exhibit high transparency over a broad spectral region. The elements (Y, O and Nd) are uniformly distributed in the ceramic body, and the average grain size increases with Nd content. Based on the absorption spectrum, the Judd-Ofelt intensity parameters are calculated (Ω₂=4.364×10⁻²⁰ cm², Ω₄=3.609×10⁻²⁰ cm² and Ω₆=2.919×10⁻²⁰ cm²). The absorption coefficients increase linearly with Nd³⁺ doping concentration. The absorption cross-section at 804 nm and stimulated emission cross-section at 1078 nm are calculated to be 1.54×10⁻²⁰ and 7.24×10⁻²⁰ cm², respectively. All the emission bands exhibit the highest emission intensities with 1.0at% Nd³⁺ ion content, while the lifetime decreases dramatically from 321.5 μs (0.1at% Nd) to 17.9 μs (7.0at% Nd). According to the emission spectra and measured lifetime, the optimum doping concentration of Nd³⁺ ion in Y₂O₃ transparent ceramic might be around 1.0at%.     

Formation of nanodots on oblique ion sputtered InP surfaces

Using a field emission gun based scanning electron microscopy, we report the formation of nanodots on the InP surfaces after bombardment by 100 keV Ar⁺ ions under off-normal ion incidence (30° and 60° with respect to the surface normal) condition in the fluence range of 1 × 10¹⁶ to 1 × 10¹⁸ ions cm⁻². Nanodots start forming after a threshold fluence of about 1 × 10¹⁷ ions cm⁻². It is also seen that although the average dot diameter increases with fluence the average number of dots decreases with increasing fluence. Formation of such nanostructured features is attributed due to ion-beam sputtering. X-ray photoelectron spectroscopy analysis of the ion sputtered surface clearly shows In enrichment of the sputtered InP surface. The observation of growth of nanodots on the Ar⁺-ion sputtered InP surface under the present experimental condition matches well with the recent simulation results based on an atomistic model of sputter erosion.     

Swift ion irradiations of Fe/Fe/Si trilayers

We report here on changes in magnetism and microstructure when implanting, at 92 or 300 K, up to 5 × 10¹⁵ Au²⁶⁺-ions cm⁻² of 350 MeV into ^natFe(45 nm)/⁵⁷Fe(20 nm)/Si trilayers. This choice of ions and energy allowed to test the irradiation effects in the regime of pure electronic stopping. The samples were analysed before and after irradiation by Rutherford back-scattering spectroscopy, X-ray diffraction, conversion electron Mössbauer spectroscopy, and magneto-optical Kerr effect. Up to 1 × 10¹⁵ ions cm⁻², there was interface broadening at a mixing rate of Δσ²/Φ = 55(5) nm⁴, followed by full Fe-Si inter-diffusion. The Mössbauer spectra revealed fractions of α-Fe and amorphous ferromagnetic and paramagnetic iron silicides, but no crystalline Fe-Si phase. The magnetic remanence in the as-deposited Fe-layer showed small components of uniaxial and four-fold magnetization. For increasing ion fluence, the component with four-fold symmetry grew at the expense of the uniaxial component. For the highest fluences, an isotropic magnetization was found.     

Luminescence of Ce and Pr doped Sr2Mg(BO3)2 under VUV-UV and X-ray excitation

This report presents the luminescence properties of Ce³⁺ and Pr³⁺ activated Sr₂Mg(BO₃)₂ under VUV-UV and X-ray excitation. The five excitation bands of crystal field split 5d states are observed at about 46 729, 44 643, 41 667, 38 314 and 29 762 cm⁻¹ (i.e. 214, 224, 240, 261 and 336 nm) for Ce³⁺ in the host lattice. The doublet Ce³⁺ 5d→4f emission bands were found at about 25 840 and 24 096 cm⁻¹ (387 and 415 nm). The influence of doping concentration and temperature on the emission characteristics and the decay time of Ce³⁺ in Sr₂Mg(BO₃)₂ were investigated. For Pr³⁺ doped samples, the lowest 5d excitation band was observed at about 42017 cm⁻¹ (238 nm), a dominant band at around 35714 cm⁻¹ (280 nm) and two shoulder bands were seen in the emission spectra. The excitation and emission spectra of Ce³⁺ and Pr³⁺ were compared and discussed. The X-ray excited luminescence studies show that the light yields are ∼3200±230 and ∼1400±100 photons/MeV of absorbed X-ray energy for the samples Sr_1.86Ce_0.07Na_0.07Mg(BO₃)₂ and Sr_1.82Pr_0.09Na_0.09Mg(BO₃)₂ at RT, respectively.     

Photoluminescent and thermal behavior of 120 MeV silicon and 84 MeV oxygen ion irradiated PVDC

Photoluminescent, structural and thermal changes induced in polyvinylidenechloride (PVDC) films by irradiation with energetic silicon and oxygen ions have been determined using different techniques viz PL, FTIR, UV-vis, XRD, TGA and AFM. Noticeable photoluminescence was observed in PVDC after irradiation with 84 MeV oxygen ions at fluence 3.2×10¹¹ ions cm⁻², which is attributed to the small carbon cluster formed in the polymer due to irradiation. Quenching and shifting in the position of the PL band towards the longer wavelength side of the spectrum was observed with the increase in ion fluence. UV-vis and FTIR analysis have strongly corroborated the results of PL spectroscopy. X-ray diffractograms and TGA curves show decrease in crystallinity and weight loss, respectively, of PVDC films after irradiation. The strong correlation between the behaviors of different properties were analyzed and discussed in the present paper.     

Ionoluminescence and photoluminescence studies of Ag ion irradiated kyanite

Ionoluminescence (IL) of kyanite single crystals bombarded with 100 MeV swift Ag⁸⁺ ions with fluences in the range 1.87-7.5×10¹¹ ions/cm² has been studied. A pair of sharp IL peaks at ∼689 and 706 nm along with broad emission in the region 710-800 nm are recorded in both crystalline and pelletized samples. Similar results are recorded in Photoluminescence (PL) of pelletized kyanite bombarded with same ions and energy with fluences in the range 1×10¹¹-5×10¹³ ions/cm² with an excitation of 442 nm laser beam. The characteristic pair of sharp emission peaks at 689 and 706 nm in both IL and PL is attributed to luminescence centers activated by Fe²⁺ and Fe³⁺ ions. The reduction in IL and PL bands intensity with increase of ion fluence might be attributed to degradation of Si-O (2ν₃) bonds, present on the surface of the sample.     

Effect of 160 MeV Ni ion irradiation on PbS quantum dots

PbS quantum dots of average size 10 nm are encapsulated in a matrix (polyvinyl alcohol (PVA)) following chemical route. They are irradiated with 160 MeV Ni¹²⁺ ion beam with fluences 10¹²-10¹³ ions/cm². Red shift in the absorption response in the optical absorption spectra reveal size enhancement of the quantum dots after irradiation and was confirmed by transmission electron microscopy (TEM). Photoluminescence (PL) study was carried out with excitation wavelength 325 nm on both unirradiated and irradiated samples at different fluences and fluence-dependent surface states and excitonic emission is observed in the PL study. The Huang-Rhys coupling constant decreases significantly after swift heavy ion (SHI) irradiation and shows a decreasing trend with increase in ion fluence.     

Ionoluminescence studies of combustion synthesized Dy doped nano crystalline forsterite

Ionoluminescence (IL) of nano crystalline Mg₂SiO₄:Dy³⁺ pellet samples bombarded with 100 MeV Si⁺⁸ ions with fluences in the range (1.124–22.480) × 10¹² ions cm⁻² have been studied. Two prominent IL bands with peaks at ∼480 nm and ∼580 nm and a weak band with peak at ∼670 nm are recorded. The characteristic peaks are attributed to luminescence center activated by Dy³⁺ ions due to the transitions ⁴F_9/2→⁶H_15/2,⁶H_13/2 and ⁶H_11/2. It is found that IL intensity initially decreases rapidly and then continuous to decrease slowly with further increase in ion fluence. The reduction in the Ionoluminescence intensity with increase of ion fluence might be attributed to degradation of Si–O ( 2ν₃) bonds present on the surface of the sample and/or due to lattice disorder produced by dense electronic excitation under heavy ion irradiation.     

Ion beam modification of porous silicon using high energy Au ions and its impact on photoluminescence spectra

This paper presents investigation of impact of high-energy ion-irradiation on properties of light emitting porous silicon (PS) through photoluminescence (PL) spectroscopy. Irradiation was performed with 100 MeV Au⁺⁷ ions from a pelletron accelerator at ion doses in 10¹⁰-10¹⁴ cm⁻² range. The effect was associated with a blueshift (∼40 nm) and an enhancement of the PL intensity, in general. The efficiency and stability of PL with respect to ambients was seen to be relatively improved. The PL properties of PS were found to be stable against low to medium dose irradiation (<10¹³ cm⁻²), whereas, higher dose led to further degradation of the optical properties. The effects have been explained in terms of a decrease in the non-radiative recombination probability of electron-hole pairs due to chemical restructuring of the surface and a reduced crystallite size as a result of irradiation.     

Growth and spectroscopic characterization of Er: Sr3Y(BO3)3 crystal

This paper reports the growth and spectroscopic characterization of Er³⁺:Sr₃Y(BO₃)₃ crystal. Er³⁺:Sr₃Y(BO₃)₃ crystal with dimensions up to ∅20×35 mm³ has been grown by Czochralski method. The polarized spectroscopic properties of Er³⁺:Sr₃Y(BO₃)₃ crystal were investigated. Based on the Judd-Ofelt theory, the effective intensity parameters Ω_t were obtained: Ω₂=1.71×10⁻²⁰ cm², Ω₄=1.39×10⁻²⁰ cm², Ω₆=0.74×10⁻²⁰ cm² for π-polarization, and Ω₂=1.77×10⁻²⁰ cm², Ω₄=1.44×10⁻²⁰ cm², Ω₆=0.65×10⁻²⁰ cm² for σ-polarization. The emission cross-section σ_em was calculated to be 4.75×10⁻²¹ cm² for π-polarization at 1536 nm and 6.30×10⁻²¹ cm² for σ-polarization at 1537 nm. The investigated results showed that Er³⁺:Sr₃Y(BO₃)₃ crystal may be regarded as a potential laser host material for 1.55 μm IR solid-state lasers.     

Role of Ti in the luminescence process of Al2O3:Si,Ti

Al₂O₃:Si,Ti, prepared under oxidizing condition at high temperature, gives PL emission around 430 nm when excited with 240 nm. The Al₂O₃:C, TL/OSL phosphor, also shows emission around 430 nm, which corresponds to characteristic emission of F-center. Thus, to identify the exact nature of luminescent center in Al₂O₃:Si,Ti, fluorescence lifetime measurement studies were carried out along with the PL,TL and OSL studies. The PL and TL in Al₂O₃:Si,Ti show emission around 430 nm and the time-resolved fluorescence studies show lifetime of about 43 μs for the 430 nm emission, which is much smaller than the reported lifetime of ∼35 ms for the 430 nm emission (F-center emission) in Al₂O₃:C phosphor. Therefore, the emission observed in Al₂O₃:Si,Ti phosphor was assigned to Ti⁴⁺ charge transfer transition. Fluorescence studies of Al₂O₃:Si,Ti do not show any traces of F and F⁺ centers. Also, Ti⁴⁺ does not show any change in the charge state after gamma-irradiation. On the basis of the above studies, a mechanism for TSL/OSL process in Al₂O₃:Si,Ti is proposed.     

Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1×10¹⁵, 2×10¹⁵ and 3×10¹⁵ electrons/cm². The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of ∼1×10⁻⁸ mbar. The values of the threshold field, required to draw an emission current density of ∼1 μA/cm², are found to be ∼0.52, 1.9, 1.3 and 0.8 V/μm for untreated, irradiated with fluence of 1×10¹⁵, 2×10¹⁵ and 3×10¹⁵ electrons/cm². The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.     

The effects of xenon ion irradiation on the photoluminesce behavior of poly(p-cresolformaldeyde)/diazonaphtoquinone thin films

In the present paper, we investigate the origin of photoluminescence (PL) and the changes in the optical properties: refractive index and absorption coefficient, in poly(p-cresolformaldeyde) and diazonaphtoquinone thin films irradiated with Xe ions. Films 400 nm thick have been irradiated with 800 keV Xe²⁺ ions in a fluence range from 10¹³ to 6 × 10¹⁵ Xe cm⁻². The structural modifications were followed by the techniques of nuclear reaction analysis, elastic recoil detection analysis, Rutherford backscattering, Fourier transform infrared and Raman spectroscopies. The PL behavior was characterised with 488 nm excitation wavelength. The pristine films show emission with maxima of the main bands located at 635, 720 and 830 nm. For fluences up to 10¹⁴ Xe cm⁻², the photoluminescence intensity increases with the irradiation fluence. The chain mobility lowering, characterized by the crosslinked structure, explains this behavior in organic systems. Other possible contribution for increasing of PL intensity, at these fluences, is the presence of oxygen trapped in the polymer chains by the dangling bonds. At intermediate and higher fluences, the photoluminescence starts to decrease. At fluences higher than 10¹⁴ Xe cm⁻², irreversible changes of the organic structure occur and they are characterized by large losses of oxygen and hydrogen, transforming the material into amorphous carbon films. The loss of photoluminescent behavior is associated with the light absorption characteristics of the amorphous carbon structure. This conclusion is supported by the observed increase of the refractive indexes and absorption coefficients, obtained in the infrared region, as well as by the Raman results. Also, the effect of irradiation modifying the refractive index in the infrared region suggests the application of these films as waveguide in this region of wavelength.