A periodic density functional theory study of the dehydrogenation of methanol over CuCl(1 1 1) surface

The decomposition of methanol on clean and oxygen-precovered CuCl(1 1 1) surface have been studied with the method of density functional theory-generalized gradient approximation (DFT-GGA) and the periodic slab models. The effects of different methanol coverages up to one monolayer are investigated. The activation of the O-H bond of methanol to form the methoxide intermediate, the activation of the C-H bond to form the hydroxymethyl intermediate and the activation of the C-O bond to form methyl are examined. These intermediates can subsequently react to form methoxide, hydroxymethyl, methyl, formaldehyde, formyl, and finally CO on the surface. The chemisorption energies of CH₃OH, CH₃O, H₂COH, CH₃, H₂CO, HCO, OH and CO at their most favorable adsorption sites are predicted to be −57.9, −235.3, −172.9, −170.5, −67.8, −192.4, −309.5 and −105.7 kJ/mol, respectively. We also confirm that the O-H bond-breaking paths have lower energy barrier, compared to the C-O and C-H bond-breaking paths. However, these reactions need a lower energy barrier when precovered oxygen atoms participate in these reactions.     

Solvent effects for CO and H2 adsorption on Cu2O (1 1 1) surface: A density functional theory study

To investigate solvent effects, CO and H₂ adsorption on Cu₂O (1 1 1) surface in vacuum, liquid paraffin, methanol and water are studied by using density functional theory (DFT) combined with the conductor-like solvent model (COSMO). When H₂ and CO adsorb on Cu_cus of Cu₂O (1 1 1) surface, solvent effects can improve CO and H₂ activation. The H-H bond increases with dielectric constant increasing as H₂ adsorption on O_suf of Cu₂O (1 1 1) surface, and the H-H bond breaks in methanol and water. It is also found that both the structural parameters and Mulliken charges are very sensitive to the COSMO solvent model. In summary, the solvent effects have obvious influence on the clean surface of Cu₂O (1 1 1) and the adsorptive behavior.     

Carbon monoxide adsorption on the metastable fcc-Co/Cu(1 0 0) surface

The adsorption properties of CO on the epitaxial five-monolayer Co/Cu(1 0 0) system, where the Co overlayer has stabilized in the metastable fcc-phase, are reported. This system is known to exhibit metallic quantum well (MQW) states at energies 1 eV or greater above the Fermi level, which may influence CO adsorption. The CO/fcc-Co/Cu(1 0 0) system was explored with low energy electron diffraction (LEED), inverse photoemission (IPE), reflection-absorption infrared spectroscopy (RAIRS) and temperature programmed desorption (TPD). Upon CO adsorption, a new feature is observed in IPE at 4.4 eV above E_F and is interpreted as the CO 2π^∗ level. When adsorbed at room temperature, TPD exhibits a CO desorption peak at ∼355 K, while low temperature adsorption reveals additional binding configurations with TPD features at ∼220 K and ∼265 K. These TPD peak temperatures are correlated with different C-O stretch vibrational frequencies observed in the IR spectra. The adsorption properties of this surface are compared to those of the surfaces of single crystal hcp-Co, as well as other metastable thin film systems.     

Adsorption and dissociation of O2 on CuCl(1 1 1) surface: A density functional theory study

The adsorption and dissociation of O₂ on CuCl(1 1 1) surface have been systematically studied by the density functional theory (DFT) slab calculations. Different kinds of possible modes of atomic O and molecular O₂ adsorbed on CuCl(1 1 1) surface and possible dissociation pathways are identified, and the optimized geometry, adsorption energy, vibrational frequency and Mulliken charge are obtained. The calculated results show that the favorable adsorption occurs at hollow site for O atom, and molecular O₂ lying flatly on the surface with one O atom binding with top Cu atom is the most stable adsorption configuration. The O-O stretching vibrational frequencies are significantly red-shifted, and the charges transferred from CuCl to oxygen. Upon O₂ adsorption, the oxygen species adsorbed on CuCl(1 1 1) surface mainly shows the characteristic of the superoxo (O₂⁻), which primarily contributes to improving the catalytic activity of CuCl, meanwhile, a small quantity of O₂ dissociation into atomic O also occur, which need to overcome very large activation barrier. Our results can provide some microscopic information for the catalytic mechanism of DMC synthesis over CuCl catalyst from oxidative carbonylation of methanol.     

An IRAS study of CO bonding on Sn/Pt(1 1 1) surface alloys at maximal pressures of 10 Torr

The adsorption of CO on Pt(1 1 1), (2 × 2) and (√3 × √3)R30° Sn/Pt(1 1 1) surface alloys has been studied using temperature programmed desorption (TPD), low energy electron diffraction (LEED) and infrared reflection adsorption spectroscopy (IRAS). The presence of Sn in the surface layer of Pt(1 1 1) reduces the binding energy of CO by a few kcal/mol. IRAS data show two C-O stretching frequencies, ∼2100 and ∼1860 cm⁻¹, corresponding to atop and bridge bonded species, respectively. Bridge bonded stretching frequencies are only observed for Pt(1 1 1) and (2 × 2) Sn/Pt(1 1 1) alloy surfaces. A slight coverage dependence of the vibrational frequencies is observed for the three surfaces. High pressure IRAS experiments over a broad temperature range show no indication of bridge bonded CO on any of the three surfaces. Direct CO adsorption on Sn sites is not observed over the measured temperature and pressure ranges.     

Adsorption of carbon monoxide on Pd(3 1 1) and (2 1 1) surfaces

Adsorption of carbon monoxide on Pd(3 1 1) and (2 1 1) stepped surfaces has been investigated by the extended London-Eyring-Polyani-Sato (LEPS) method constructed using a 5-parameter Morse potential. The calculated results show that there exist common characteristics of CO adsorption on the two surfaces. At low coverage, CO occupies threefold hollow site of the (1 1 1) terrace and is tilted with respect to the surface normal. Among the threefold hollow sites on the (1 1 1) terrace, the nearer the site is to the step, the greater is the influence of the step. The twofold bridge site on the (1 0 0) step is also a stable adsorption site at high coverage. Because of the different lengths of the (1 1 1) terraces, the (3 1 1) and (2 1 1) stepped surfaces have different characteristics. A number of new sites are exposed on the boundary regions, including the fourfold hollow site (H₄) of the (3 1 1) surface and the fivefold hollow site (H₅) of the (2 1 1) surface. At high coverage, CO resides in the H₅ site of the (2 1 1) surface, but the H₄ site of the (3 1 1) surface is not a stable adsorption site. This study further shows that the on-top site on the (1 0 0) step of Pd(3 1 1) is a stable adsorption site, but the same type of site on Pd(2 1 1) is not.     

Formamide reactions on rutile TiO2(0 1 1) surface

The reaction of formamide over the (0 1 1) faceted TiO₂(0 0 1) surface has been studied by Temperature Programmed Desorption (TPD) and X-ray Photoelectron Spectroscopy (XPS). Two main reactions were observed: dehydration to HCN and H₂O and decomposition to NH₃ and CO. The dehydration reaction was found to be three to four times larger than the decomposition at all coverages. Each of these reactions is found to occur in two temperature domains which are dependent upon surface coverage. The low temperature pathway (at about 400 K) is largely insensitive to surface coverage while the high temperature pathway (at about 500 K) shifts to lower temperatures with increasing surface coverage. These two temperature pathways may indicate two adsorption modes of formamide: molecular (via an η¹(O) mode of adsorption) and dissociative (via an η²(O,N) mode of adsorption). C1s and N1s XPS scans indicated the presence of multiple species after formamide absorption at 300 K. These occurred at ca. 288.5 eV (-CONH-) and 285 eV (sp³/sp² C) for the C1s and 400 eV-(NH₂), 398 eV (-NH) and 396 eV (N) for the N1s and result from further reaction of formamide with the surface.     

Chemistry of Alanine on Pd(1 1 1): Temperature-programmed desorption and X-ray photoelectron spectroscopic study

The adsorption of alanine is studied on a Pd(1 1 1) surface using X-ray photoelectron spectroscopy (XPS) and temperature-programmed desorption (TPD). It is found that alanine adsorbs into the second and subsequent layers prior to completion of the first monolayer for adsorption at ∼250 K, while at ∼300 K, alanine adsorbs almost exclusively into the first monolayer with almost no second-layer adsorption. Alanine adsorbs onto the Pd(1 1 1) surface in its zwitterionic form, while the multilayer contains about 30-35% neutral alanine, depending on coverage. Alanine is thermally stable on the Pd(1 1 1) surface to slightly above room temperature, and decomposes almost exclusively by scission of the CCOO bond to desorb CO₂ and CO from the COO moiety, and the remaining fragment yields ethylamine and HCN.     

Ga-induced superstructures on the Si(1 1 1) 7 × 7 surface

Monolayer Ga adsorption on Si surfaces has been studied with the aim of forming p-delta doped nanostructures. Ga surface phases on Si can be nitrided by N₂⁺ ion bombardment to form GaN nanostructures with exotic electron confinement properties for novel optoelectronic devices. In this study, we report the adsorption of Ga in the submonolayer regime on 7 × 7 reconstructed Si(1 1 1) surface at room temperature, under controlled ultrahigh vacuum conditions. We use in-situ Auger electron spectroscopy, electron energy loss spectroscopy and low energy electron diffraction to monitor the growth and determine the properties. We observe that Ga grows in the Stranski-Krastanov growth mode, where islands begin to form on two flat monolayers. The variation in the dangling bond density is observed during the interface evolution by monitoring the Si (LVV) line shape. The Ga adsorbed system is subjected to thermal annealing and the residual thermal desorption studied. The difference in the adsorption kinetics and desorption dynamics on the surface morphology is explained in terms of strain relaxation routes and bonding configurations. Due to the presence of an energetic hierarchy of residence sites of adatoms, site we also plot a 2D phase diagram consisting of several surface phases. Our EELS results show that the electronic properties of the surface phases are unique to their respective structural arrangement.     

CO2 adsorption on Cr(1 1 0) and Cr2O3(0 0 0 1)/Cr(1 1 0)

We attempt to correlate qualitatively the surface structure with the chemical activity for a metal surface, Cr(1 1 0), and one of its surface oxides, Cr₂O₃(0 0 0 1)/Cr(1 1 0). The kinetics and dynamics of CO₂ adsorption have been studied by low energy electron diffraction (LEED), Aug er electron spectroscopy (AES), and thermal desorption spectroscopy (TDS), as well as adsorption probability measurements conducted for impact energies of E_i = 0.1-1.1 eV and adsorption temperatures of T_s = 92-135 K. The Cr(1 1 0) surface is characterized by a square shaped LEED pattern, contamination free Cr AES, and a single dominant TDS peak (binding energy E_d = 33.3 kJ/mol, first order pre-exponential 1 × 10¹³ s⁻¹). The oxide exhibits a hexagonal shaped LEED pattern, Cr AES with an additional O-line, and two TDS peaks (E_d = 39.5 and 30.5 kJ/mol). The initial adsorption probability, S₀, is independent of T_s for both systems and decreases exponentially from 0.69 to 0.22 for Cr(1 1 0) with increasing E_i, with S₀ smaller by ∼0.15 for the surface oxide. The coverage dependence of the adsorption probability, S(Θ), at low E_i is approx. independent of coverage (Kisliuk-shape) and increases initially at large E_i with coverage (adsorbate-assisted adsorption). CO₂ physisorbs on both systems and the adsorption is non-activated and precursor mediated. Monte Carlo simulations (MCS) have been used to parameterize the beam scattering data. The coverage dependence of E_d has been obtained by means of a Redhead analysis of the TDS curves.     

The dissociative adsorption of borane on the Ge(1 0 0)-2 × 1 surface: A density functional theory study

By means of cluster models coupled with density functional theory, we have studied the hydroboration of the Ge(1 0 0)-2 × 1 surface with BH₃. It was found that the Ge(1 0 0) surface exhibits rather different surface reactivity toward the dissociative adsorption of BH₃ compared to the C(1 0 0) and Si(1 0 0) surfaces. The strong interaction still exists between the as-formed BH₂ and H adspeices although the dissociative adsorption of BH₃ on the Ge(1 0 0) surface occurs readily, which is in distinct contrast to that on the C(1 0 0) and Si(1 0 0) surfaces. This can be understood by the electrophilic nature of the down Ge atom, which makes it unfavourable to form a GeH bond with the dissociating proton-like hydrogen. Alternatively, it can be attributed to the weak proton affinity of the Ge(1 0 0) surface. Nevertheless, the overall dissociative adsorption of BH₃ on group IV semiconductor surfaces is favourable both thermodynamically and kinetically, suggesting the interesting analogy and similar diversity chemistry of solid surface in the same group.     

Density functional theory study of selenium adsorption on Fe(1 1 0)

The adsorption of atomic Se on a Fe(1 1 0) surface is examined using the density functional theory (DFT). Selenium is adsorbed in high-symmetry adsorption sites: the -short and long-bridge, and atop sites at 1/2, 1/4, and 1 monolayer (ML) coverages. The long bridge (LB) site is found to be the most stable, followed by the short bridge (SB) and top sites (T). The following overlayer structures were examined, p(2 × 2), c(2 × 2), and p(1 × 1), which correspond to 1/4 ML, 1/2 ML, and 1 ML respectively. Adsorption energy is −5.23 eV at 1/4 ML. Se adsorption results in surface reconstruction, being more extensive for adsorption in the long bridge site at 1/2 ML, with vertical displacements between +8.63 and −6.69% -with regard to the original Fe position-, affecting the 1st and 2nd neighbours. The largest displacement in x or y-directions was determined to be 0.011, 0.030, and 0.021 Å for atop and bridge sites. Comparisons between Se-adsorbed and pure Fe surfaces revealed reductions in the magnetic moments of surface-layer Fe atoms in the vicinity of the Se. At the long bridge site, the presence of Se causes a decrease in the surface Fe d-orbital density of states between 4 and 5 eV below Fermi level. The density of states present a contribution of Se states at −3.1 eV and −12.9 eV. stabilized after adsorption. The Fe-Fe overlap population decrease and a Fe-Se bond are formed at the expense of the metallic bond.     

Dissociative adsorption and thermal evolution of dichloroethylenes on Ni(1 0 0)

The room temperature (RT) adsorption and thermal evolution of cis- and trans-dichloroethylene (DCE) and their structural isomer, iso-DCE, on Ni(1 0 0) have been studied by vibrational electron energy loss spectroscopy (EELS), Auger electron spectroscopy (AES) and thermal desorption spectrometry (TDS). For RT adsorption, both cis- and trans-DCE exhibit very similar EELS features that are different from those found for iso-DCE. These differences indicate the formation of different fragments upon RT adsorption. In particular, the primary adspecies for cis- and trans-DCE are ethane-1,1,2,2-tetrayl () and acetylide-like () adspecies along with a small amount of chlorovinyl adspecies, while ethylylidyne () is the more plausible adspecies for iso-DCE. The differences in the adstructures upon dissociative adsorption at RT underline the important isomeric effects. Furthermore, both AES and TDS results for all three DCE isomers show that most of the Cl atoms produced by dechlorination remain on the surface and its surface concentration remains unchanged upon annealing the samples above 500 K. Upon further annealing to 550 K, the EELS spectra of all three isomers exhibit a broad feature near 1600 cm⁻¹, which suggests the formation of carbon clusters on the surface. The presence of surface Cl atoms therefore appears to prevent the CC bond cleavage during thermal evolution of the adspecies on Ni(1 0 0).     

DFT study of NH3 dissociation on Si(1 1 1)-7 × 7. The role of intermolecular interactions

The adsorption of NH₃ molecule on the Si(1 1 1)-7 × 7 surface modelled with a cluster has been studied using density functional theory (DFT). The results indicate the existence of a precursor state for the non-dissociative chemisorption. The active site for the molecular chemisorption is the adatom; while the NH₃ molecule adsorbs on the Si restatom via this preadsorbed state, the adsorption on the Si adatom is produced practically without an energy barrier. The ammonia adsorption on the adatom induces an electron transfer from the dangling bond of this atom to the dangling bond of the adjacent Si restatom, hindering this site for the adsorption of a second NH₃ incoming molecule. However, this second molecule links strongly by means of two H-bonds. The dissociative chemisorption process was studied considering one and two ammonia molecules. For the dissociation of a lonely NH₃ molecule an energy barrier of ∼0.3 eV was calculated, yielding NH₂ on the adatom and H on the restatom. When two molecules are adsorbed, the NH₃-NH₃ interaction yields the weakening of a N-H bond of the ammonia molecule adsorbed closer the Si surface. As a consequence, the dissociation barrier practically disappears. Thus, the presence of a second NH₃ molecule at the adatom-restatom pair of the Si(1 1 1)-7 × 7 surface makes the dissociative reaction self-assisted, the total adsorption process elapsing with a negligible activation barrier (less than 0.01 eV).     

The reaction of vinyl acetate with Pd(1 1 0) studied with TPD and molecular beams

The adsorption and reaction of vinyl acetate with the clean Pd(1 1 0) surface has been investigated using temperature programmed desorption and molecular beam reaction measurements. These show that, under low pressure conditions, the main reaction pathway above 400 K is total dehydrogenation to yield hydrogen and carbon dioxide in the gas phase, and surface carbon. This occurs at a steady state, notwithstanding the fact that carbon is being deposited continuously onto the surface. The reaction continues because the vast majority of this carbon is lost from the surface to the bulk of the sample. Between about 320-380 K the reaction profile is somewhat different; the molecule dissociates at the CH₃COOCHCH₂ bond, producing the most stable intermediate, the acetate, and the reaction stops after the build-up of adsorbed acetate and surface carbonaceous species. At ∼300 K, the products are very similar to those for acetaldehyde adsorption (namely, methane, CO and some surface carbon), and they evolve in a non-steady state manner due to the build up of adsorbed CO on the surface. Thus the mechanism is dominated here by dissociation at the CH₃COOCHCH₂ bond, and formation of the acetyl intermediate. Consideration is given to the connection between these data and vinyl acetate synthesis.     

Study of ammonia molecule adsorbing on diamond (1 0 0) surface

The diamond (1 0 0) surface with amino terminations is investigated based on density function theory within the generalized gradient approximation. Our calculated negative electron affinity of diamond (1 0 0) surface with hydrogen termination provides a necessary condition for initiating radical reaction. The results display that the ammonia molecule can form stable C-N covalent bonds on the diamond surface. In addition, due to the lower adsorption energy of one amino group binding on diamond surface, single amino group (SAG) model is easy to be realized in experiment with the comparison of double amino group (DAG) model. The adsorbed ammonia molecule will induce acceptor-like gap states with little change of the valence and conduction band of diamond in SAG model. The adsorption mechanism in the formation of ammonia monolayer on H-terminated diamond (1 0 0) surface, and two possible adsorption structures (SAG and DAG) were especially studied.     

Photoelectron spectroscopy for probing surface reactions at the CO/K/Cu(1 1 5) interface

The adsorption of carbon monoxide on the potassium modified Cu(1 1 5) surface was investigated using photoelectron spectroscopy based on synchrotron radiation. From detailed analysis of the 1s core levels in combination with existing knowledge, the assignment of surface species is performed. It is demonstrated that in dependence of the alkali coverage, several adsorption states of CO are present on the interface at 135 K. From the temperature dependence of the C 1s and O 1s profiles it is established that surface reactions based on CO dissociation start from 223 K over an interface with a potassium coverage close to half a complete K overlayer. The role of potassium as a reordering environment of adsorbed CO, leading to molecule dissociation and disproportionation is proposed. It is observed that a higher density of potassium on the substrate surface blocks adsorption sites for incoming CO molecules and no dissociation takes place.     

Atomic and electronic structure of methanol on Ge(1 0 0)

We have performed density-functional theory (DFT) calculations to investigate the adsorption structures of methanol on a Ge(1 0 0) surface. Among many possible adsorption configurations, the most favorable configurations at room temperature were found to be those in which the OH-dissociated methanol molecule forms O-Ge bonds, with the methoxy group either parallel or perpendicular to the Ge surface. The spatial arrangement of methoxy group relative to the Ge(1 0 0) surface is not critical. The dissociated H is bonded to an adjacent up-Ge atom, passivating the dangling bond. The possibility of H diffusion to other Ge atoms is also investigated. The corresponding simulated images explain well the adsorption features observed experimentally. The reaction pathways explain the feasibility of OH-dissociative structures at room temperature. The two OH-dissociative configurations where methoxy groups are either parallel or perpendicular to Ge surfaces are similar in thermodynamic and kinetic aspects.     

Adsorption and reactivity of SO2 on Ir(1 1 1) and Rh(1 1 1)

The adsorption and reactivity of SO₂ on the Ir(1 1 1) and Rh(1 1 1) surfaces were studied by surface science techniques. X-ray photoelectron spectroscopy measurements showed that SO₂ was molecularly adsorbed on both the Ir(1 1 1) surface and the Rh(1 1 1) surface at 200 K. Adsorbed SO₂ on the Ir(1 1 1) surface disproportionated to atomic sulfur and SO₃ at 300 K, whereas adsorbed SO₂ on the Rh(1 1 1) surface dissociated to atomic sulfur and oxygen above 250 K. Only atomic sulfur was present on both surfaces above 500 K, but the formation process and structure of the adsorbed atomic sulfur on Ir(1 1 1) were different from those on Rh(1 1 1). On Ir(1 1 1), atomic sulfur reacted with surface oxygen and was completely removed from the surface, whereas on Rh(1 1 1), sulfur did not react with oxygen.     

A theoretical study of c-C5H8 adsorption on Ge (0 0 1)-2 × 1 and on dimer vacancies on the surface: Electronic structure and bonding

In this work we analyzed the geometry and the chemical interactions for c-C₅H₈ adsorption on Ge (0 0 1), using density functional theory calculations (DFT). We examined the changes in the atomic interactions using a slab model. We considered two cases, the cyclopentene adsorption on Ge(0 0 1) and on dimer vacancies on the surface. We found an average distance H-Ge, -C-Ge and C-Ge of 1.50, 1.70 and 1.65 Å, respectively, on dimer vacancies; and an average C-Ge distance of 2.05 Å on Ge-Ge dimer. We also computed the density of states (DOS) and the DOS weighted overlap populations (OPDOS) corresponding to C-C, C-Ge, C-H, and Ge-Ge bonds. During adsorption the main contribution are the CC double bond in both cases, and the next C and the H's belonging to this bonds in the case of adsorption on dimer vacancies. The orbital contribution includes participation of the 2p_y and 2p_z orbitals corresponding to unsaturated C atoms, 2p_z corresponding to side saturated C, and the 4p orbitals of Ge for the adsorption on dimer vacancies; 2s and 2p_z orbitals corresponding to double bond C atoms, 4s and 4p_z orbitals of Ge for the adsorption on Ge(0 0 1).