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1.
The formation mechanism of CH3O by the adsorption and decomposition of CH3OH on clean and oxygen-precovered Cu2O(1 1 1) surface has been investigated with density functional theory method together with the periodic slab models. Two possible formation pathways of CH3O by CH3OH decomposition on oxygen-precovered (Opre) Cu2O(1 1 1) surface were proposed and discussed. One is the O-H bond-cleavage of CH3OH with H migration to Opre to form CH3O; the other is the C-O bond-scission of CH3OH with CH3 migration to Opre leading to CH3Opre. The calculated results show that the O-H bond-breaking path has the lowest activation barrier 26.8 kJ mol−1, the presence of oxygen-precovered on Cu2O(1 1 1) surface exhibits a high surface reactivity toward the formation of CH3O by the O-H bond-cleavage of CH3OH, and reduce the activation barrier of O-H bond-cleavage. The C-O bond-breaking path was inhibited by dynamics, suggesting that the O atom of CH3O is not from the oxygen-precovered, but comes from the O of CH3OH. Meanwhile, the calculated results give a clear illustration about the formation mechanism of CH3O in the presence of oxygen and the role of oxygen at the microscopic level.  相似文献   

2.
DFT calculations have been performed to investigate the effect of dielectric responses of the solvent environment on the CO adsorption over CuCl(1 1 1) surface by using COSMO (conductor-like solvent model) model in Dmol3. Different dielectric constants, including vacuum, liquid paraffin, methylene chloride, methanol and water solution, are considered. The effects of solvent model on the structural parameters, adsorption energies and vibrational frequency of CO adsorption over CuCl(1 1 1) surface have been investigated. The calculation results suggest that solvent effects can improve the stability of CO adsorption and reduce the intensity of C-O bond, which might mean that solvent is in favor of C-O bond activation and improve the reaction activity of oxidative carbonylation in a slurry reactor.  相似文献   

3.
The covalent attachment of alkyl groups to silicon surfaces, via carbon-silicon bond formation, has been attempted using gas-surface reactions starting from Cl-terminated Si(1 1 1) or H:Si(1 1 1) under ultraviolet light irradiation. The formation of Cl-terminated Si(1 1 1) and its resulting stability were examined prior to deposition of organic molecules. High-resolution electron energy loss spectroscopy (HREELS) was utilized for detecting surface-bound adsorbates. The detection of photo-deposited organic species on Cl:Si(1 1 1) from gas-phase CH4 or CH2CH2 was not significant. On H:Si(1 1 1), it was evident that after the photoreaction with gas-phase C2H5Cl, C2H5 groups were chemically bonded to the surface Si atoms through single covalent bonds. The C2H5 groups were thermally stable at temperatures below 600 K. Alkyl monolayers prepared on silicon surfaces by dry process will lead to a new prospective technology of nanoscale fabrication and biochemical applications.  相似文献   

4.
Temperature-programmed reaction/desorption, X-ray photoelectron spectroscopy, and reflection-absorption infrared spectroscopy have been employed to investigate the reactions of ICH2CH2OH on Cu(1 0 0) under ultrahigh-vacuum conditions. ICH2CH2OH can dissociate on Cu(1 0 0) at 100 K, forming a -CH2CH2OH surface intermediate. Density functional theory calculations predict that the -CH2CH2OH is most probably adsorbed on atop site. -CH2CH2OH on Cu(1 0 0) further decomposes to yield C2H4 below 270 K. No evidence shows the formation of -CH2CH2O- intermediate in the reactions of ICH2CH2OH on Cu(1 0 0) in contrast to the decomposition of BrCH2CH2OH on Cu(1 0 0) and ICH2CH2OH on Ag(1 1 1) and Ag(1 1 0), exhibiting the effects of carbon-halogen bonds and metal surfaces.  相似文献   

5.
Ethylene adsorption was studied by use of DFT/B3LYP with basis set 6-31G(d,p) in Gaussian’03 software. It was found that ethylene has adsorbed molecularly on all clusters with π adsorption mode. Relative energy values were calculated to be −50.86 kcal/mol, −20.48 kcal/mol, −32.44 kcal/mol and −39.27 kcal/mol for Ni13 nanocluster, Ni10(1 1 1), Ni13(1 0 0) and Ni10(1 1 0) surface cluster models, respectively. Ethylene adsorption energy is inversely proportional to Ni coordination number when Ni10(1 1 1), Ni13(1 0 0) and Ni10(1 1 0) cluster models and Ni13 nanocluster are compared with each other.  相似文献   

6.
The adsorption properties of CO on the epitaxial five-monolayer Co/Cu(1 0 0) system, where the Co overlayer has stabilized in the metastable fcc-phase, are reported. This system is known to exhibit metallic quantum well (MQW) states at energies 1 eV or greater above the Fermi level, which may influence CO adsorption. The CO/fcc-Co/Cu(1 0 0) system was explored with low energy electron diffraction (LEED), inverse photoemission (IPE), reflection-absorption infrared spectroscopy (RAIRS) and temperature programmed desorption (TPD). Upon CO adsorption, a new feature is observed in IPE at 4.4 eV above EF and is interpreted as the CO 2π level. When adsorbed at room temperature, TPD exhibits a CO desorption peak at ∼355 K, while low temperature adsorption reveals additional binding configurations with TPD features at ∼220 K and ∼265 K. These TPD peak temperatures are correlated with different C-O stretch vibrational frequencies observed in the IR spectra. The adsorption properties of this surface are compared to those of the surfaces of single crystal hcp-Co, as well as other metastable thin film systems.  相似文献   

7.
F. Gou  A.W. Kleyn 《Surface science》2007,601(18):3965-3969
Molecular dynamics simulations of the CH3 interaction with Si(1 0 0) were performed using the Tersoff-Brenner potential. The H/C ratio obtained from the simulations is in agreement with available experimental data. The results show that H atoms preferentially react with Si. SiH is the dominant form of SiHx generated. The amount of hydrogen that reacts with silicon is essentially energy-independent. H atoms do not react with adsorbed carbon atoms. The presence of C-H bonds on the surface is due to molecular adsorption.  相似文献   

8.
Chemisorption of 1,1-dichloroethene (Cl2CCH2) to a Si(1 1 1)-7 × 7 surface was studied by means of X-ray photoelectron spectroscopy using synchrotron radiation, recording chlorine 2p and carbon 1s spectra. For carbon 1s, spectral assignment of the chemisorbed species is based on quantum chemical calculations of chemical shifts in model compounds.The results confirm the identity of covalently bonded 1-chlorovinyl (-CClCH2) and vinylidene (CCH2) adspecies. Upon chemisorption at room temperature it was found that about one-third of the molecules break one C-Cl bond while about two-thirds of the adsorbates break two C-Cl bonds. We do not, however, find evidence for isomerization of CCH2 to di-bonded vinylene (-CHCH-).  相似文献   

9.
The adsorption and reaction of vinyl acetate with the clean Pd(1 1 0) surface has been investigated using temperature programmed desorption and molecular beam reaction measurements. These show that, under low pressure conditions, the main reaction pathway above 400 K is total dehydrogenation to yield hydrogen and carbon dioxide in the gas phase, and surface carbon. This occurs at a steady state, notwithstanding the fact that carbon is being deposited continuously onto the surface. The reaction continues because the vast majority of this carbon is lost from the surface to the bulk of the sample. Between about 320-380 K the reaction profile is somewhat different; the molecule dissociates at the CH3COOCHCH2 bond, producing the most stable intermediate, the acetate, and the reaction stops after the build-up of adsorbed acetate and surface carbonaceous species. At ∼300 K, the products are very similar to those for acetaldehyde adsorption (namely, methane, CO and some surface carbon), and they evolve in a non-steady state manner due to the build up of adsorbed CO on the surface. Thus the mechanism is dominated here by dissociation at the CH3COOCHCH2 bond, and formation of the acetyl intermediate. Consideration is given to the connection between these data and vinyl acetate synthesis.  相似文献   

10.
Infrared reflection absorption (IRA) spectra measured for dimethyl ether (DME) adsorbed at 80 K on Cu(1 1 1) and Ag(1 1 1) give IR bands belonging only to the A1 and B2 species, indicating that the adsorbate takes on an orientation in which the C2 axis bisecting the COC bond angle tilts away from the surface normal within the plane perpendicular to the substrates. The DFT method was applied to simulate the IRA spectra, indicating that the tilt angles of DME on Cu(1 1 1) and Ag(1 1 1) are about 50° and 55°, respectively, at submonolayer coverages. The results are in contrast to the case of DME on Cu(1 1 0) and Ag(1 1 0), where the C2 axis is perpendicular to the substrates [T. Kiyohara et al., J. Phys. Chem. A 106 (2002) 3469]. Methyl ethyl ether (MEE) adsorbed at 80 K on Cu(1 1 1) gives IRA bands mainly ascribable to the gauche (G) form, whereas the IRA spectra measured for MEE on Ag(1 1 1) are characterized by the trans (T) form. The rotational isomers are identical with those on Cu(1 1 0) and Ag(1 1 0); i.e., MEE on Cu(1 1 0) takes the G form and the adsorbate on Ag(1 1 0) the T form [T. Kiyohara et al., J. Phys. Chem. B 107 (2003) 5008]. The simulation of the IRA spectra indicated that (i) the G form adsorbate on Cu(1 1 1) takes an orientation, in which the axis bisecting the COC bond angle tilts away from the surface normal by ca. 30° within the plane perpendicular to the surface to make the CH3-CH2 bond almost parallel to the surface, and (ii) the T form adsorbate on Ag(1 1 1) takes an orientation, in which the bisecting axis tilts away by ca. 60° from the surface normal within the perpendicular plane. Comparison of these adsorption structures of MEE on the (1 1 1) substrates with those of MEE on Cu(1 1 0) and Ag(1 1 0) indicates that the structures are mainly determined by a coordination interaction of the oxygen atom to the surface metals and an attractive van der Waals interaction between the ethyl group of MEE and the substrate surfaces. The coordination interaction plays an important role on Cu(1 1 1) and Cu(1 1 0), which makes the adsorbate on the Cu substrates to take the orientations with the bisecting axis near parallel to the surface normal and to assume the G form in order to make the ethyl group parallel to the surface, which is favorable for the van der Waals interaction. In the case of MEE on the Ag substrates the attractive van der Waals interaction plays a dominant role, resulting in the T form which is more favorable for the interaction than the G form.  相似文献   

11.
To investigate solvent effects, CO and H2 adsorption on Cu2O (1 1 1) surface in vacuum, liquid paraffin, methanol and water are studied by using density functional theory (DFT) combined with the conductor-like solvent model (COSMO). When H2 and CO adsorb on Cucus of Cu2O (1 1 1) surface, solvent effects can improve CO and H2 activation. The H-H bond increases with dielectric constant increasing as H2 adsorption on Osuf of Cu2O (1 1 1) surface, and the H-H bond breaks in methanol and water. It is also found that both the structural parameters and Mulliken charges are very sensitive to the COSMO solvent model. In summary, the solvent effects have obvious influence on the clean surface of Cu2O (1 1 1) and the adsorptive behavior.  相似文献   

12.
Zhenhua He 《Surface science》2006,600(3):514-526
The room-temperature adsorption and thermal evolution of iso-, cis- and trans-dichloroethylene (DCE) on Si(1 1 1)7 × 7 have been studied by vibrational electron energy loss spectroscopy and thermal desorption spectrometry (TDS). The presence of the Si-Cl stretch at 510 cm−1 suggests that, upon adsorption, all three isomers dissociate via C-Cl bond breakage on the 7 × 7 surface to form mono-σ bonded chlorovinyl , which could, in the case of iso-DCE, further dechlorinate to vinylidene (:CCH2) upon insertion into the back-bond. The higher saturation exposure for the Si-Cl stretch at 510 cm−1 observed for cis- and trans-DCE than iso-DCE suggests that Cl dissociation via the CHCl group in the cis and trans isomers is less readily than the CCl2 group in iso-DCE. Our TDS data show remarkable similarities in both molecular desorption near 360 K and thermal evolution of the respective adstructures for all three isomers on Si(1 1 1)7 × 7. In particular, upon annealing to 450 K, the mono-σ bonded chlorovinyl adspecies is found to further dechlorinate to either vinylene di-σ bonded to the Si surface or acetylene to be released from the surface. Above 580 K, vinylene could also become gaseous acetylene or undergo H abstraction to produce hydrocarbon or SiC fragments. All three DCE isomers also exhibit TDS features attributable to an etching product SiCl2 at 800-950 K and recombinative desorption products HCl at 700-900 K and H2 at 650-820 K. The stronger Cl-derived TDS signals and Si-Cl stretch at 510 cm−1 over 450-820 K for trans-DCE than those for cis-DCE indicate stronger dechlorination for trans-DCE than cis-DCE, which could be due to less steric hindrance resulting from the formation of the chlorovinyl adspecies for trans-DCE during the initial adsorption/dechlorination process. Finally, our density functional calculations qualitatively support the thermodynamic feasibility and relative stabilities of the proposed adstructures involving chlorovinyl, vinylidene, and vinylene adspecies.  相似文献   

13.
The chemisorption of CH3 on Rh(1 1 1) is studied to understand the origin of the weakened symmetric stretch mode. A few different explanations for this weakened mode have been suggested in previous studies. These include C-H bond depletion and donation into C-H anti-bond orbitals either in an upright or tilted geometry. We investigate these possibilities by performing first-principles density functional calculations. Our results show strong adsorption at all high-symmetry sites with methyl in two possible orientations. A thorough analysis of the adsorption geometry shows that C3v symmetry is preferred over a tilted species, ruling out tilting as a mechanism for C-H mode softening. Evidence of a multi-center bond between methyl and the surface rhodium atoms (similar to the kind shown recently by Michaelides and Hu for methyl on Ni(1 1 1)) is presented, showing that C-H bond depletion is the cause of mode-softening for methyl on Rh(1 1 1). Experimental results have shown that mode-softening diminishes when an electronegative species is coadsorbed, suggesting that donation into C-H anti-bonding orbitals is the mechanism for mode-softening. We therefore examine the coadsorption of oxygen and methyl on Rh(1 1 1). Our results suggest a new model for the effect of O on CH3. Analysis of charge density differences shows that the dominant initial effects of O coadsorption are the removal of charge from the C-surface bond and the transfer of charge to the C-H bond. Subsequent increase of the H-Rh distance further reduces mode softening.  相似文献   

14.
The dehydrogenation of CH4 on the Co(1 1 1) surface is studied using density functional theory calculation (DFT). It is found that CH4 is favored to dissociate to CH3 and then transforms to CH2 and CH by sequential dehydrogenation, and CH4 activation into CH3 and H is the rate-determining step on the Co(1 1 1) surface. CH2 is quite unstable on Co(1 1 1) surface. CH dehydrogenation into C and H is difficult. CH3 and H prefer to adsorb on 3-fold hollow hcp and fcc sites, and CH2, CH and C prefer to adsorb on hcp sites.  相似文献   

15.
n-Si(1 1 1) crystalline electrode was modified by carboxyl acid groups and sulfonic groups. The flat band potential (Ufb), relation between flat band potential and the carbon numbers to the modified samples and relation between photocurrent density and potential of the modified electrodes were studied. ATR-IR spectra and XPS analysis show that the organic compounds were connected to n-Si(1 1 1) wafer by SiC bond. Calculation indicates that the surface modification ratio increased with the carbon number of organic groups decreased. Mott-Schottky plots gives the flat band potential of the samples to shift to negative positions with the carbon number decreased in both of the two different systems and the flat band potential of the sample with the group of (CH2)3SO3H reaches to −0.82 V, which is more negative than reported, and the flat band potential of all the samples in this paper are more negative than the sample with methyl group [B. Ashish, N.S. Lewis, J. Phys. Chem. B 102 (1998) 1067; S. Takabayashi, M. Ohashi, K. Mashima, Y. Liu, S. Yamazaki, Y. Nakato, Langmuir 21 (2005) 8832]. The photocurrent and photovoltage of the modifications are stable enough under solar illumination for a long time.  相似文献   

16.
In this work we analyzed the geometry and the chemical interactions for c-C5H8 adsorption on Ge (0 0 1), using density functional theory calculations (DFT). We examined the changes in the atomic interactions using a slab model. We considered two cases, the cyclopentene adsorption on Ge(0 0 1) and on dimer vacancies on the surface. We found an average distance H-Ge, -C-Ge and C-Ge of 1.50, 1.70 and 1.65 Å, respectively, on dimer vacancies; and an average C-Ge distance of 2.05 Å on Ge-Ge dimer. We also computed the density of states (DOS) and the DOS weighted overlap populations (OPDOS) corresponding to C-C, C-Ge, C-H, and Ge-Ge bonds. During adsorption the main contribution are the CC double bond in both cases, and the next C and the H's belonging to this bonds in the case of adsorption on dimer vacancies. The orbital contribution includes participation of the 2py and 2pz orbitals corresponding to unsaturated C atoms, 2pz corresponding to side saturated C, and the 4p orbitals of Ge for the adsorption on dimer vacancies; 2s and 2pz orbitals corresponding to double bond C atoms, 4s and 4pz orbitals of Ge for the adsorption on Ge(0 0 1).  相似文献   

17.
Adsorption of carbon monoxide on Pd(3 1 1) and (2 1 1) stepped surfaces has been investigated by the extended London-Eyring-Polyani-Sato (LEPS) method constructed using a 5-parameter Morse potential. The calculated results show that there exist common characteristics of CO adsorption on the two surfaces. At low coverage, CO occupies threefold hollow site of the (1 1 1) terrace and is tilted with respect to the surface normal. Among the threefold hollow sites on the (1 1 1) terrace, the nearer the site is to the step, the greater is the influence of the step. The twofold bridge site on the (1 0 0) step is also a stable adsorption site at high coverage. Because of the different lengths of the (1 1 1) terraces, the (3 1 1) and (2 1 1) stepped surfaces have different characteristics. A number of new sites are exposed on the boundary regions, including the fourfold hollow site (H4) of the (3 1 1) surface and the fivefold hollow site (H5) of the (2 1 1) surface. At high coverage, CO resides in the H5 site of the (2 1 1) surface, but the H4 site of the (3 1 1) surface is not a stable adsorption site. This study further shows that the on-top site on the (1 0 0) step of Pd(3 1 1) is a stable adsorption site, but the same type of site on Pd(2 1 1) is not.  相似文献   

18.
The adsorption of NH3 molecule on the Si(1 1 1)-7 × 7 surface modelled with a cluster has been studied using density functional theory (DFT). The results indicate the existence of a precursor state for the non-dissociative chemisorption. The active site for the molecular chemisorption is the adatom; while the NH3 molecule adsorbs on the Si restatom via this preadsorbed state, the adsorption on the Si adatom is produced practically without an energy barrier. The ammonia adsorption on the adatom induces an electron transfer from the dangling bond of this atom to the dangling bond of the adjacent Si restatom, hindering this site for the adsorption of a second NH3 incoming molecule. However, this second molecule links strongly by means of two H-bonds. The dissociative chemisorption process was studied considering one and two ammonia molecules. For the dissociation of a lonely NH3 molecule an energy barrier of ∼0.3 eV was calculated, yielding NH2 on the adatom and H on the restatom. When two molecules are adsorbed, the NH3-NH3 interaction yields the weakening of a N-H bond of the ammonia molecule adsorbed closer the Si surface. As a consequence, the dissociation barrier practically disappears. Thus, the presence of a second NH3 molecule at the adatom-restatom pair of the Si(1 1 1)-7 × 7 surface makes the dissociative reaction self-assisted, the total adsorption process elapsing with a negligible activation barrier (less than 0.01 eV).  相似文献   

19.
Adsorption, decomposition and oxidation of benzene on Ir(1 1 1) was studied by high resolution (synchrotron) XPS, temperature programmed desorption and low energy electron diffraction. Molecular adsorption of benzene on Ir(1 1 1) is observed between 170 K and 350 K. Above this temperature both desorption and decomposition of benzene take place. An ordered adsorbate structure was observed upon adsorption around 335 K. Decomposition involves C-C bond breaking as the formation of CHad is observed. The presence of a saturated Oad layer (0.5 ML) weakens molecular benzene adsorption and suppresses decomposition.  相似文献   

20.
By means of cluster models coupled with density functional theory, we have studied the hydroboration of the Ge(1 0 0)-2 × 1 surface with BH3. It was found that the Ge(1 0 0) surface exhibits rather different surface reactivity toward the dissociative adsorption of BH3 compared to the C(1 0 0) and Si(1 0 0) surfaces. The strong interaction still exists between the as-formed BH2 and H adspeices although the dissociative adsorption of BH3 on the Ge(1 0 0) surface occurs readily, which is in distinct contrast to that on the C(1 0 0) and Si(1 0 0) surfaces. This can be understood by the electrophilic nature of the down Ge atom, which makes it unfavourable to form a GeH bond with the dissociating proton-like hydrogen. Alternatively, it can be attributed to the weak proton affinity of the Ge(1 0 0) surface. Nevertheless, the overall dissociative adsorption of BH3 on group IV semiconductor surfaces is favourable both thermodynamically and kinetically, suggesting the interesting analogy and similar diversity chemistry of solid surface in the same group.  相似文献   

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