Rubrene薄层的位置对器件发光性能的影响及器件内激子复合区域的分析

通过在主体材料上蒸镀一层荧光染料超薄层的方法,研究了有机小分子5,6,11,12-tetraphenyl-naphthacene(rubrene)薄层在器件中不同位置时,有机电致发光器件(OLED)的电致发光光谱及发光性能.实验发现当rubrene薄层位于NPB/AlQ界面处时,器件的发光几乎都来自rubrene的发光...     

DPVBi为激子阻挡层的亚单层有机发光器件的制备与光电性能研究

结合亚单层的有机发光技术,制备了一种多层有机电致发光器件,其结构为ITO/m-MTDATA (50nm)/ C545T (0.05nm) /DPVBi (d nm)/DCM2(0.05nm)/ Alq (60nm) /LiF(1nm) /Al.荧光材料C545T和DCM2以亚单层的方式插入DPVBi前后,通过改变DPVBi的厚度,观察器件性能的变化,当DPVBi为4 nm时,器件在4V电压下最大发光效率是4.19 cd/A,在13 V电压下最大亮度是17050 cd/m2.分析对比了四种不同厚度器件的电流密度-电压曲线、亮度-电压曲线、电致发光光谱图和色坐标,发现选择合适厚度的激子阻挡层,可以得到效率较高的器件.激子阻挡层一般选择载流子传输能力较差,HOMO能级较低的材料.所得结果对有机发光器件尤其是采用亚单层有机白光器件的设计和制作有一定的指导作用.     

窄谱带绿色有机电致发光器件

以Tb³⁺:水杨酸(Tb³⁺:(SA)₃)为空穴传输层兼发光层、高荧光材料Alq₃为电子传输层,得到了窄谱带的绿色有机薄膜电致发光双层结构器件.实验证实,双层器件的电致发光是电荷载流子隧穿内界面(Tb³⁺:(SA)₃/Alq₃)之后分别在两有机层内的复合发光,是两有机层本征发光的叠加.其光谱随着电子传输层厚度而改变,因而减少电子传输层厚度能得到亮度高、稳     

三波段白光有机电致发光器件及其色稳定性的控制

制备并研究了基于3种小分子荧光材料的白光有机电致发光器件。发光层采用红色发光材料DCJTB掺杂绿光材料Alq3构成混合发光层,与OXD-7构成的蓝色发光层形成异质结的结构,并以NPB为空穴注入层。通过改变结构参数详细研究了发射光谱及其色坐标的电场依赖性。通过分析载流子注入/传输特性,控制激子的复合区域等措施得到了色坐标稳定性好、光谱丰富的高性能白光电致发光器件。经过优化的器件结构可以覆盖更大的可见光区域,当电压从9 V增加到13 V时,色坐标仅从CIE(x,y)=(0.364,0.314)偏移到CIE(x,y)=(0.332,0.291),具有较好的色稳定性。     

高效率和色稳定性的双超薄发光层的黄光有机电致发光器件

主要对rubrene黄光发光材料制作0.1nm厚度的超薄发光层的有机电致发光器件作了研究,并配合BCP空穴阻挡层探讨了对器件效率和色坐标稳定性的影响。双超薄rubrene发光层配合BCP空穴阻挡层的有机电致发光器件的性能得到了很好的改善,外加电压6V时,器件电流效率为6.35cd.A-1;外加电压10V时,器件发光亮度达到了7068cd.m-2。另外,在较大的外加电压驱动范围内,器件的色坐标一直保持在(0.49,0.49)。增加的发光效率和良好的色坐标稳定性主要是取决于空穴与电子的注入与输运平衡以及激子在超薄rubrene发光层中稳定性的复合平衡。     

有机电致发光器件的封装热特性研究

有机电致发光器件的稳定性与其封装结构密切相关,封装技术的优劣直接影响有机电致发光二极管器件的寿命.本文采用热阻抗模型对三种常用有机电致发光二极管器件封装结构进行热阻抗分析,并利用ANSYS有限元分析软件的热分析模块对热特性进行研究,得出各种器件封装结构的温度场分布,根据温度场分布比较得出各种封装结构散热性能的差异.分析得出,传统后盖式封装结构与混合封装结构散热效果相差不大,Barix封装结构具有最好的散热性能.模拟仿真结果显示,当玻璃厚度从0.5 mm增加至0.9 mm时,传统封装结构的发光层温度升高了0.124℃,Barix封装结构的发光层温度升高了0.262℃,表明玻璃层厚度的增减对有机电致发光二极管器件的散热影响较小.改变器件表面空气流动速度,使对流系数从25W/(m²·K)变为85W/(m²·K)时,传统封装结构有机电致发光二极管发光层的温度由42.911℃递减到26.85℃,可见增大表面空气流动速度对降低有机电致发光二极管有源层的温度作用显著.     

有机电致发光白光器件的研究进展

在十多年的时间里,有机电致发光二极管(Organic Lightemitting Diodes,OLEDs)的研究和应用取得了长足的进展。有机电致发光器件具有许多优点,例如:自发光、视角宽、响应快、发光效率高、温度适应性好、生产工艺简单、驱动电压低、能耗低、成本低等,因此有机电致发光器件极有可能成为下一代的平板显示终端。有机电致发光白光器件因为可以用于全彩色显示和照明,已成为OLED研究中的热点。介绍了有机电致发光白光器件的研究进展,按发光的性质将白光器件分为荧光器件和磷光器件两类,按发光层数将白光器件分为单层和多层器件,对相关材料、器件结构、发光机理等方面进行了讨论。     

利用色彩转换法制备高色稳定性的柔性白色有机电致发光器件

本文利用色转换方法,将高效的蓝色柔性有机电致发光器件(flexible organic light emitting devices, FOLEDs)与色转换材料(color conversion material, CCM)相结合,制备了柔性白色有机电致发光器件(white organic light emitting devices, WOLEDs).首先利用2, 3, 5, 6-Tetrafluoro-7, 7, 8, 8-tetracyano-quinodimethane (F4-TCNQ)和4, 4', 4"-tris-(N-3-methylphenyl-N-phenylamino) tripheny-lamine (m-MTDATA)组成的多量子阱(multiple quantum well, MQW)结构作为空穴注入层(hole injection layer, HIL)结合新型蓝光材料N⁶, N⁶, N¹², N¹²-tetrap-tolylchrysene-6, 12-diamine (NCA)制备出高效的蓝光FOLEDs,然后将其与色转换材料4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) 结合,通过沉积不同厚度的CCM来优化白光器件的发光光谱,获得了色稳定性较高的白光. 实验结果表明:在驱动电压为7 V, DCJTB的厚度为120 nm时得到较接近白光等能点的色坐标 (0.33, 0.27),且当驱动电压由6 V升至11 V 时,器件的色坐标变化仅为(±0.02, ±0.02), 表现出高色稳定性.     

一种高电流密度下效率不降低的绿光有机电致发光器件

为了提高有机电致发光器件(OLED)在高电流密度下的发光效率, 在以C545T掺杂Alq₃为发光层的有机小分子绿光器件中的发光层与电子传输层之间插入超薄LiF绝缘层.结果表明, 器件的外量子效率随着电流密度的增加始终没有降低, 直至600 mA/cm²时达到最大值 4.79%, 是相同电流密度下的参考器件的外量子效率的7倍.     

利用LiF/Al作为电极的有机电致发光器件

本文报道了利用LiF/Al作为负电极的有机电致发光器件,器件结构为ITO/TPD/Alq3/LiF/Al,LiF层的加入增强了电子注入,当其厚度为0.4nm时,器件的性能最好,与单层Al和Mg/Al电极的同类器件相比,此时器件的开启电压由Al电极时的4.3V和Mg/Al电极时的3.0V降低到了2.0V,器件的最大亮度分别由4000cd/m²、14000cd/m²提高到19600cd/m²,器件的发光效率也分别增加了5倍和2倍,达到2.66lm/W.     

Oxovanadium (IV) complexes of bidentate [N,O] donor Schiff-base ligands: synthesis and mesomorphism

A series of new oxovanadium(IV) Schiff-base complexes of the type [VO(L)₂], [L?=?N-(4-n-alkoxysalicylaldimine)-4′-dodecyloxyaniline, n?=?6, 8, 16, and 18] have been synthesized. The compounds were characterized by FT-IR, ¹H-NMR, ¹³C-NMR, UV-Vis, FAB-mass, and magnetic susceptibility measurements. The mesomorphic behavior of the compounds was studied by polarized optical microscopy and differential scanning calorimetry. The compounds are all highly thermally stable exhibiting smectic mesomorphism. Non-electrolytic nature of the complexes was ascertained by solution electrical conductance measurements. Cyclic voltammetry revealed a quasireversible single-electron response for VO(V)/VO(IV) couple. A ν_V=O stretching mode at ～970?cm^?1 indicates absence of any intermolecular V=O?···?V=O interactions. Density functional theory study was carried out using DMol3 at BLYP/DNP level to determine energy optimized structure revealed a distorted square pyramidal geometry for the vanadyl complexes.     

Preparation of UV curing crosslinked polyviologen film and its photochromic and electrochromic performances

Polyether urethane diacrylate matrix (PEUDA) and acrylate-functional viologen (ACV²⁺) were successfully synthesized and characterized in detail by FTIR and ¹H NMR spectra, respectively. Subsequently, they were used to prepare UV curing crosslinked polyviologen film in combination with 2-hydroxyethyl methacrylate (HEMA), trimethylolpropane ethoxylate triacrylate (TMPTA) and diphenyl (2, 4, 6-trimethylbenzoyl) phosphine oxide (TPO). UV curing approach confined the polyviologen film on ITO electrode, which imparted the film excellent adhesion ability to ITO glass, good solvent resistance, excellent chemical stability, excellent optical and electrochemical properties. The crosslinked PACV²⁺ film exhibited excellent photochromic and electrochromic performances. After UV illumination for 60 s, the crosslinked PACV²⁺ film can swiftly change its color from pale yellow to deep blue, while the optical transmission of crosslinked PACV²⁺ film at 610 nm did not change significantly and still retained about 63.6% after 30 cycles. Simultaneously, the cyclic voltammetry experiment showed the PACV²⁺ film can undergo repeatable electrochemical redox reactions with good reversibility beyond the 10th scan. Furthermore, the electrochromic device composed of the PACV²⁺ film and gel electrolyte film can undergo reversible color change in response to the external voltages of −2.0 V and 2.0 V, respectively, while the contrast of EC device at 610 nm did not change significantly and still retained about 39.5% after 10 cycles. This UV curing approach to preparing viologen-functional film offers a method to preparing large-scale photo- and electrochromic device, which is relatively simple, high productivity, energy saving, and environmental protection.     

Superior performance characteristics for the poly(2,5-dimethoxyaniline)–poly(styrene sulfonic acid)-based electrochromic device

We have fabricated an electrochromic (EC) device with poly(2,5-dimethoxyaniline), PDMA, entrapped in poly(styrene sulfonic acid) (PSS) as an electrochromic layer. The device showed improved performances like stability, optical contrast, etc., over the device with a PDMA layer doped by H₂SO₄. In the process of fabrication of the EC device with a sandwich configuration, indium tin oxide (ITO)/PDMA–PSS||poly(ethyleneimine) (PEI)/orthophosphoric acid (H₃PO₄)/WO₃/ITO, electrochemical polymerization of 2,5-dimethoxyaniline (DMA) was performed with PSS as electrolyte and ITO coated glass as working electrode. The performance characteristics of EC device, like optical contrast, stability, switching time, etc., were followed by cyclic voltammetry, double potential step chronoamperometry and in-situ spectroelectrochemistry. The device was operated in between − 1 V and + 1 V, and absorption characteristics were followed by in-situ UV–visible spectroscopy. A visible contrast in color upon switching the potential from − 1 V to + 1 V was noticed for the device. The device was pale yellow at − 1 V and dark green at + 1 V. Incorporation of PSS into PDMA resulted enhancement in the performance of the complementary electrochromic device. The optical contrast of the device was improved by incorporating PSS into PDMA matrix. The device retained nearly 50% of their optical contrast after 10,000 double steps informing the superior performance of PDMA–PSS in the EC device.     

Monolithic integration technology between microlens arrays and infrared charge coupled devices

In this paper, we develop an integration technology between Si microlens and 256(H)×256(V) element PtSi Schottky-barrier infrared charge coupled device (IR-CCD) to improve the optical responsivity of CCD sensor. The refractive microlenses with the pixel size of approximately 28×28 μm² is directly fabricated on the backside of CCD substrate to focus the incident irradiation onto the active area. For the integration device the fill factor is improved by a factor of 2.1. As a result, the IR-CCD image sensors operating at 77 K indicate an approximate 0.06–0.4 increase in relative optical responsivity in the spectral range of from 1 to 5 μm. CCD imaging quality with microlens has been improved comparing to that without microlens to a great extent.     

Flexible integration of optical switch with optical power splitting and attenuating functions for optical fiber-based networking applications

A flexible integration of optical switch with optical power splitting and attenuating functions has been proposed to optimally serve optical fiber-based networking applications. In this switch, an etched binary-slope sidewall reflector is electrostatically actuated in and out of the plane to manipulate optical signals between input and output optical fibers. The fabrication process is a simple combination of a bulk-silicon micromachining process and silicon-to-glass anodic bonding where fiber alignment grooves, reflectors and actuators are fabricated on the same silicon substrate. Ball-lensed fibers are assembled with the device to achieve high coupling efficiency. Performances of the fabricated devices are measured and discussed. The switching time is less than 9 ms at 31 V. The excess loss of the device is less than 3 dB and the controllable attenuation range is up to 38 dB at 139 V, respectively. Moreover, polarization-dependent loss is less than 0.7 dB in the whole attenuation and splitting range.     

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

High performance integrated optical modulators are highly desired for future optical interconnects. The ultra‐high bandwidth and broadband operation potentially offered by graphene based electro‐absorption modulators has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electro‐absorption modulator capable of broadband 10 Gb/s modulation speed. The measured results agree very well with theoretical predictions. A low insertion loss of 3.8 dB at 1580 nm and a low drive voltage of 2.5 V combined with broadband and athermal operation were obtained for a 50 μm‐length hybrid graphene‐Si device. The peak modulation efficiency of the device is 1.5 dB/V. This robust device is challenging best‐in‐class Si (Ge) modulators for future chip‐level optical interconnects.     

Third-order optical nonlinearities of α,ω-dithienylpolyenes and oligo(thienylvinylene)

α,ω-Dithienylpolyenes and oligo(thienylvinylene) are interesting third-order nonlinear optical materials for a variety of device applications. To better understand the third-order nonlinear response of these materials, the third-order susceptibilities (χ⁽³⁾) and nonlinear absorption behaviors of two α,ω-dithienylpolyenes with different conjugation length and two oligo(thienylvinylene) with different substituents on the thiophene rings have been studied using degenerate four wave mixing (DFWM) and nonlinear transmission techniques at 532 nm. The χ⁽³⁾ values of 1×10⁻³ mol/l solutions are all of the order of 10⁻¹³ esu. The χ⁽³⁾ values increase with the increase of the linear absorption coefficient. In addition, these compounds exhibit reverse saturable absorption for nanosecond laser pulses. The strength of reverse saturable absorption varies when the conjugation length and substituents change. Moreover, the nonlinear absorption characteristics of these compounds in the picosecond regime differ from those in the nanosecond regime. The different nonlinear absorption behavior is due to the relative contributions from excited singlet–singlet and triplet–triplet absorption. The strong reverse saturable absorption characteristics of two of the compounds suggest that they could be potential candidates for optical limiting applications in the nanosecond regime.     

Irradiation effects in II-VI compounds

Abstract

A summary of published results on electron energy threshold measurements in II–VI compounds, and their interpretation in terms of damage on the metal and chalcogenide sublattices, is given. EPR results in irradiated II–VI compounds are also reviewed. These include the F⁺ center in ZnS; ZnO, and BeO and new results on the zinc vacancy (V) in ZnSe. For the zinc vacancy, optical absorption bands at 4680Å and 8850Å are identified with V^? and a band at 5000Å is tentatively assigned to V^?. The activation energy for anneal of the vacancy is measured to be 1.26±.06 eV, and this is tentatively identified as the activation energy for vacancy motion. An EPR spectrum produced in a 20.4 °K irradiation is tentatively identified as a zinc vacancy-interstitial pair. Complete annealing occurs for this defect in the range 60–100 °K.     

High-brightness white light-emitting organic electroluminescent devices using poly(N-vinylcarbazole) as a hole-transporter

A white light-emitting organic electroluminescent (EL) device with multilayer thin-film structure, which shows high-brightness and high-efficiency, is demonstrated. The device structure of glass substrate/indium–tin oxide/poly(N-vinylcarbazole) (PVK)/1,1,4,4-tetraphenyl-1,3-butadiene/8-(quinolinolate)-aluminum (Alq) doped with 5,6,11,12-tetraphenylnaphthacene/Alq/Mg/Al was employed. The turn-on voltage is as low as 2.5 V. The white light emission covers a wide range of the visible region, and the Commission Internationale de 1' Eclairage coordinates of the emitted light are (0.319, 0.332) at 10 V. Bright white light, over 20 000 cd/m², was successfully obtained at about 18 V, and the maximum efficiency reaches to 1.24 lm/W at 9 V. The reasons of obtaining high level EL properties of our device have been discussed.     

Third-order nonlinear optical response of newly synthesized accepter/donor substituted propylidene aryloxy acet hydrazide

A class of organic compounds namely propylidene aryloxy acet hydrazide derivatives were synthesized. The third-order nonlinear optical properties and optical limiting studies of the compounds were investigated using the single beam Z-scan technique at 532 nm. The Z-scan study reveals that the compounds exhibit a self-defocusing effect at 532 nm. The calculated values of nonlinear refractive index, third-order nonlinear optical susceptibility and second order molecular hyperpolarizability are of the order of 10^?11 esu, 10^?13 esu and 10^?31 esu, respectively. The compounds exhibit good optical limiting properties at the wavelength used.