氧化锌掺钡的电子结构及其铁电性能研究

运用基于密度泛函理论的第一性原理方法计算了不同原子百分比含量的Ba掺杂Zn0半导体体材料超晶胞的能带结构、电子态密度、极化率和相对介电值.计算结果表明:Ba掺杂的Zn0体系为直接带隙半导体材料,其禁带宽度随着Ba原子掺杂百分比的增加呈现出逐渐增大的趋势.体系铁电性能的计算表明:与纯Zn0相比,Zn0掺入Ba原子后的极化率与相对介电值发生了较为明显的变化,其极化率随着Ba原子掺杂百分比的增加而增大,相对介电值随着Ba原子掺杂百分比的增加而减小.对角化后的极化率分量的数值结果表明:在电场作用下超胞中可能存在微畴结构,并且由于畴间电偶极矩的强相互作用,使得超胞宏观上表现为几乎具有各向同性的极化率特征.     

自旋注入有机物的扩散理论

根据自旋注入半导体的相关理论， 考虑到有机体内可能同时含有带自旋的单极化子和不带自旋的双极化子两种载流子，从扩散 理论和欧姆定律出发，建立了自旋注入有机体的唯象模型.通过计算发现，适当选择铁磁层极化率或两层的电导率可以使得有机层内电流具有高的自旋极化.进一步研究了单极化子浓度等因素对注入电流极化的影响. 关键词： 自旋电子学 自旋注入 有机聚合物 极化子     

半导体超晶格系统中的磁电调控电子自旋输运研究

通过采用转移矩阵方法求解自旋电子隧穿过程,理论研究了半导体超晶格系统中电子自旋输运的磁电调控行为.结果表明：仅对超晶格系统施以磁调制,隧穿系数将出现自旋分裂,随磁场增强,电导自旋极化率变大且展宽于费米能区;若选取不变磁场情况,同时施以间隔周期电场调制,超晶格的电子极化率将有更为显著地提高.进一步发现,随电场强度的改变,电子自旋输运行为显然存在两个明显不同区域,下自旋电子将在不同调制区域表现为不同的变化趋势.然而,若对周期磁超晶格施加间隔两周期的电调制,自旋电导输运的临界行为消失,电导极化率在高能区的共振峰 关键词： 半导体超晶格 自旋输运 磁电调控     

电阻式核磁共振测量的最新进展

电阻式核磁共振(RDNMR)测量是1988年由德国马普所的von Klitzing研究小组针对GaAs二维电子气中少量核自旋的探测而提出的一种具有超高灵敏度的实验技术. 目前, RDNMR已经成为研究单层或双层GaAs二维电子气核自旋和电子自旋特性的重要手段. 由于为实现电阻式核磁共振测量所建立的动态核极化方法强烈依赖于GaAs特有的材料属性, 至今这一技术一直没有扩展应用到其他半导体低维系统中. 最近,本研究小组发展了一种动态核极化新方法,成功实现了对典型窄带半导体锑化铟(InSb) 二维电子气的电阻式核磁共振测量.本文在介绍电阻式核磁共振测量工作原理及已建立的典型动态核极化方法的基础上,着重讨论所提出的动态核极化新方法的机理、 实验结果以及对今后研究的展望.     

Rashba自旋-轨道耦合调制的单层半导体纳米结构中电子的自旋极化效应

利用现代材料生长技术纳米厚的半导体可以沿着良好的方向有序生长,形成层状半导体纳米结构.在这种半导体纳米结构中由于结构反演对称性破缺出现较强的自旋-轨道耦合,能有效消除半导体中电子的自旋简并,导致电子自旋极化效应,在自旋电子学领域中具有重要的应用.本文从理论上研究了单层半导体纳米结构中由Rashba型自旋-轨道耦合引起的电子自旋极化效应.由于Rashba型自旋-轨道耦合,相当强的电子自旋极化效应出现在该单层半导体纳米结构中.自旋极化率与电子的能量和平面内波矢有关,尤其是其可通过外加电场或半导体层厚度进行调控.因此,该单层半导体纳米结构可作为半导体自旋电子器件应用中的可控电子自旋过滤器.     

GaAs量子阱半导体微腔中腔极化激元的动态行为

GaAs量子阱半导体微腔中, 光子同时与重空穴激子、轻空穴激子耦合形成腔极化激元. 本文采用三谐振子耦合模型, 计算了腔极化激元的三支的色散关系、线宽、有效质量及其群速度; 结果表明, 由于腔极化激元的三支中光子、重空穴激子、轻空穴激子所占的权重随着平面波矢（或入射角度）变化, 腔极化激元三支的线宽、有效质量及其群速度呈现出不同的动态行为.     

咔唑分子拉曼激发虚态的相关研究

根据键极化率与拉曼峰强之间的关系,得到咔唑分子拉曼激发虚态随时间演化的键极化率. 将得到的键极化率的末态与用密度泛函理论得到的基态键电荷密度进行了对比,讨论并分析了拉曼激发虚态键极化率随时间弛豫的特征. 研究表明:咔唑分子在拉曼激发初态时,电子由两个骨架六元环向连通两六元环的连通键上流动,而并非向外围的C–H键上流动. 拉曼激发末态键极化率分布趋势与基态键电荷密度分布很相似,说明激发的电子又流回到分子骨架,即弛豫到基态. 通过对拉曼激发虚态键极化率弛豫过程特征时间的研究,发现连通两六元环的C–C键以及靠近连通键的C–C键的键极化率的弛豫时间较其他键的极化率弛豫时间都长,进一步说明了拉曼激发虚态电子弛豫特征. 这些结果反映了咔唑这类具有连通键的多元环分子在拉曼激发虚态所具有的特征与性质,这对拉曼激发虚态的研究有重要意义. 关键词： 拉曼峰强 键极化率 拉曼激发虚态     

铁磁、肖特基金属和半导体纳米自旋过滤器中的量子尺寸效应

采用转移矩阵法,研究了结构尺度对自旋过滤器中电子自旋极化特性的影响.该自旋过滤器可以通过在半导体异质结上沉积纳米足度的铁磁条带和肖特基金属条带来实现.计算结果表明,电子的自旋极化特性强烈依赖于铁磁条带和肖特基金属条带的结构尺度和位置,即该器件中存在量子足寸效应.此外,我们的计算结果还表明,电子的自旋极化特性还与施加在肖特基金属条上的电压所诱发的电垒高度密切相关.因此,我们可以通过改变施加在肖特基金属条上的电压来调控该器件中电子的自旋极化特性,制造一个电压可调的电子自旋过滤器.     

利用WBEPM模型和稳定变分法计算氦原子的极化率和色散系数

以最弱受约束电子势模型(WBEPM)理论为基础,建立了计算氦原子多极动态极化率和相互作用色散系数的稳定变分方法.导出了该方法中所涉及的矩阵元和线性方程组的解析表达式.作为应用,具体计算了基态氦原子的极化率和两体色散系数,将计算结果与用其他方法所得到的结果进行了比较, 数据基本一致.     

利用WBEPM模型和稳定变分法计算氦原子的极化率和色散系数

以最弱受约束电子势模型(WBEPM)理论为基础,建立了计算氦原子多极动态极化率和相互作用色散系数的稳定变分方法 .导出了该方法中所涉及的矩阵元和线性方程组的解析表达式.作为应用,具体计算了基态氦原子的极化率和两体色散系数,将计算结果与用其他方法所得到的结果进行了比较,数据基本一致.     

一维反铁磁光子晶体光学双稳态效应研究

基于传递矩阵方法和光局域化原理, 本文研究了一维反铁磁光子晶体共振频率附近光学双稳态效应随电磁波入射角、 外磁场强度及电介质层数的变化.研究发现, 当外磁场为1.0 kG(1 G=10^-4 T)、电磁波小角度入射时, 反铁磁材料高低共振频率附近均可探测到光学双稳态效应; 当电磁波大角度入射时, 仅在高共振频率附近探测到光学双稳态效应. 然而, 当外磁场强度增加到2.0 kG时, 由于反铁磁材料的高低共振频率向两侧移动, 低共振频率附近缺失的光学双稳态频率窗口又被有效激发. 此外, 电磁波小角度入射时, 电介质层数在低共振频率附近对双稳态效应影响较明显.     

Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells

We proposed a new model for controlling the optical bistability(OB) and optical multistability(OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al_(0.3)Ga_(0.7)As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.     

First-order polarization-activated optical transitions in smecticC and planar nematic liquid crystals

Summary It is shown that polarization-activated intrinsic optical bistability (OB) may be obtained in smecticC or planar nematic liquid crystals without external feed-back resonator. First-order transitions for twist are proved to occur, in principle, irrespective of the liquid-crystal material constants. The light intensity, needed to obtain OB, ranges from 10 kW/cm² to 1 MW/cm². To speed up publication, the authors of this paper have agreed to not receive the proofs for correction.     

Optical bistability in defective photonic multilayers doped by graphene

We study the optical bistability (OB) in photonic multilayers doped by graphene sheets, stacking two Bragg reflectors with a defect layer between the reflectors. OB stems from the nonlinear effect of graphene, so the local field of defect mode (DM) could enhance the nonlinearity and reduce the thresholds of bistability. The structure achieves the tunability of bistability due to that the DM frequency and transmittance could be modulated by the chemical potential. Bistability thresholds and interval of the two stable states could be remarkably reduced by decreasing the chemical potential. A lager Bragg periodic number could increase the localizing of field, but the graphene loss may decrease the intensity of transmission light. We have concluded an appropriate periodic number to achieve OB. The study suggests that the tunable bistability of the structure could be used for all-optical switches in optical communication systems.     

Theoretical Investigation of Optical Bistability and Multistability Via Spontaneously Generated Coherence in Four-Level Rydberg Atoms

In this paper, we have suggested a configuration based on Rydberg atoms for adjusting properties of optical bistability (OB) and optical multistability (OM) via spontaneously generated coherence (SGC) in a unidirectional ring cavity. The Rydberg atoms consist of four energy levels interacts by a weak probe and a strong coupling fields, respectively. We have found that due to presence of SGC, threshold of OB and OM can be controlled when the strong light coupled the intermediate levels to the Rydberg state.

     

Effect of Quantum Interference from Incoherent Pumping Field and Spontaneous Emission on Controlling the Optical Bistability and Multi-Stability

Optical bistability (OB) and optical multi-stability (OM) of a four-level Λ-type atomic system with two fold lower levels inside a unidirectional ring cavity is investigated. The effect of quantum interference arising from spontaneous emission and incoherent pumping on OB and OM is discussed. It is found that the threshold of OB and OM can be controlled by quantum interference mechanisms. In addition intensity of coupling field and the rate of an incoherent pumping field on behavior of OB and OM are then discussed.     

Optical bistability and multi-stability via voltage-controlled and the rate of incoherent pump in a quantum dot nanostructure

The optical bistability (OB) and optical multi-stability (OM) in a four-level quantum dot molecule are investigated. The effect of tunnel coupling and the rate of incoherent pump on OB are then discussed. It is found that the OB threshold can be controlled via tunnel coupling and the rate of incoherent pump. We demonstrate that the voltage-controlled detuning can significantly affect the behavior of OB and OM, therefore the OM converts to OB only by the rate of incoherent pump. The results obtained can be used for the development of new types of nanoelectronic devices for realizing switching process.     

Laser-polarization-dependent and magnetically controlled optical bistability in diamond nitrogen-vacancy centers

We explore laser-polarization-dependent and magnetically controlled optical bistability (OB) in an optical ring cavity filled with diamond nitrogen-vacancy (NV) defect centers under optical excitation. The shape of the OB curve can be significantly modified in a new operating regime from the previously studied OB case, namely, by adjusting the intensity of the external magnetic field and the polarization of the control beam. The influences of the intensity of the control beam, the frequency detuning, and the cooperation parameter on the OB behavior are also discussed in detail. These results are useful in real experiments for realizing an all-optical bistate switching or coding element in a solid-state platform.     

VPE生长CdS外延膜的光学性质与光学双稳态

本文报导了在透明的CaF2衬底上采用气相外延(VPE)方法生长的高质量CdS薄膜。通过对其发射和吸收光谱以及光双稳特性的研究,表明这种外延膜的性质与体单晶相似。     

Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells

The effects of optical field on the phenomenon of optical bistability(OB) are investigated in a K-type semiconductor double quantum well(SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing.