Magnetism of alloyed models of Cr(Mn) V and Mn Cr overlayers on V (001) substrates

The magnetism is calculated for substitutional alloyed of Cr_x(Mn_x)V_1-x monolayers (MLs) and Cr_xMn_1-x on V (001) surface with a variety of concentrations (x = 0.25, 0.50 and 0.75). The substitutional surface alloys were treated by an artificial super cell construction. Parallel magnetic ordering is obtained for all the considered structures. The surface net magnetization increases in terms of Cr (Mn) concentration in Cr_x(Mn_x)V_1-x/V (001) system, while no serious variations occur in Cr_xMn_1-x/V (001). Vanadium atoms at the interfacial layers acquire appreciable magnetic moments antiferromagneticlly (AF) coupled with the surface moments. Received 25 February 2002 / Received in final form 13 May 2002 Published online 14 October 2002 RID="a" ID="a"e-mail: jkalifa@sci.ju.edu.jo     

Martensitic transformations: first-principles calculations combined with molecular-dynamics simulations

Results are presented of first-principles total-energy calculations and molecular-dynamics simulations of structural transformations in magnetic transition metal alloys like Fe_1-xNi_x. While first-principles calculations allow to identify those structures having the lower total energy, molecular-dynamics simulations can be used to trace out the dependence of the transformation on temperature, composition, concentration of defects etc. We have used the method of the semi-empiric embedded-atom potential in the molecular-dynamics simulations which yields remarkable good results for the structural changes. Received: 3 February 1998 / Revised: 4 May 1998 / Accepted: 24 June 1998     

The magnetic properties of diluted CoFe2O4 nanomaterials

The magnetic properties of （Cox Fe1-x）A （Zn1-x Fe1＋x）B O4 are studied using mean-field theory and the probability distribution law to obtain the saturation magnetization, the coercive field, the critical temperature, and the exchange interactions with different values of D （nm） and x. High-temperature series expansions （HTSEs） combined with the Pade approximant are used to calculate the critical temperature of （CoxFe1-x）A（Znl-xFe1＋x）BO4, and the critical exponent associated with magnetic susceptibility is obtained.     

Structural features of the La-Sr-Fe-Co-O system

A structural study has been performed on the La_0.8Sr_0.2Fe_xCo_1-xO₃ (x = 0.025 to 0.3) system displaying large magnetoresistance (MR) at room temperature. A detailed analysis of the crystal structure and microstructure was done by X-ray diffraction (XRD), transmission and scanning electron microscopy (TEM and SEM). The atomic resolution TEM images and the appearing superreflections in the corresponding SAED patterns revealed that a superstructure is formed due to the presence of iron. The correlation between the ordered microstructure and the observed large MR ratio is discussed. ⁵⁷Fe M?ssbauer spectroscopy was utilized to gain information on the valence state of iron in the sample with x = 0.3. The lattice parameters of Fe- doped La_0.8Sr_0.2Fe_xCo_1-xO₃ compounds were found to increase monotonously with increasing Fe content. The valence state of iron was found to be Fe³⁺. Received 22 January 2001     

Ce2-xDyxFe17合金的磁熵研究

研究了Ce_2-xDy_xFe₁₇(x=0.0,0.3,0.5,1.0)系列合金在77—298K温区范围磁熵变,发现Ce_2-xDy_xFe₁₇系列合金有较大的磁熵变,居里温度可通过离子替代而改变,是一种可供选择的室温磁致冷材料.     

热处理对非晶态合金Nd4Fe96-xBx磁性的影响

本文研究了用单辊急冷方法制备的非晶态合金Nd₄Fe_96-xB_x的晶化,以及热处理对其硬磁性和相组成的影响,发现非晶态合金Nd₄Fe_96-xB_x的晶化温度比相同B含量的非晶态合金Fe_100-xB_x高120—190K,X射线衍射和热磁测量表明,15≤x≤25的样品晶化相是由Nd₂Fe₁₄B(T 关键词：     

机械合金化Fe100-xCux体系的X射线吸收精细结构研究

利用X射线吸收精细结构(XAFS)方法研究机械合金化制备的Fe_100-xCu_x(x=0,10,20,40,60,70,80,100,x为原子百分比)合金中Fe和Cu原子的局域环境结构.对于Fe_100-xCu_x(x≥40)二元混合物,球磨160h后,Fe原子的近邻配位结构从bcc转变为fcc,但Cu原子的近邻结构保持其fcc不变.与之相反,在Fe₈₀Cu₂₀和Fe₉₀Cu₁₀(x≤20)合金中,Fe原子的近邻配位保持其bcc结构而Cu原子的近邻配位结构从fcc转变为bcc结构.XAFS结果还表明,fcc结构的Fe_100-xCu_x样品中Fe的无序因子σ(0.0099nm)比bcc结构的Fe_100-xCu_x中的σ(0.0081nm)大得多;并且在机械合金化Fe_100-xCu_x(x≥40)样品中Fe原子的σ(0.0099nm)比其Cu原子的σ(0.0089nm)大.这表明机械合金化Fe_100-xCu_x样品中Fe和Cu原子可以有相同的局域结构环境但不是均匀的过饱和固溶体,而是由Fe富集区和Cu富集区组成的合金.我们提出互扩散和诱导相变机理来解释在球磨过程中Fe_100-xCu_x合金产生从bcc到fcc和从fcc到bcc变化的结构相变 关键词： XAFS 100-xCu_x合金')" href="#">Fe_100-xCu_x合金 机械合金化     

Superconducting and magnetic properties of Nb/Pd 1-xFex/Nb triple layers

The superconducting and magnetic properties of Nb/Pd_1-xFe_x/Nb triple layers with constant Nb layer thickness d_Nb=200 ? and different interlayer thicknesses 3 ?≤ d_PdFe ≤ ? are investigated. The thickness dependence of the magnetization and of the superconducting transition temperature shows that for small iron concentration x the Pd_1-xFe_x layer is likely to be in the paramagnetic state for very thin films whereas ferromagnetic order is established for x ≥ 0.13. The parallel critical field B_c2||(T){B_{c2||}}(T) exhibits a transition from two-dimensional (2D) behavior where the Nb films are coupled across the interlayer, towards a 2D behavior of decoupled Nb films with increasing d_PdFeand/or x. This transition allows a determination of the penetration depth x_F{\xi _F} of Cooper pairs into the Pd_1-xFe_x layer as a function of x. For samples with a ferromagnetic interlayer x_F{\xi _F} is found to be independent of x.     

Evidence of bcc Mn epitaxial growth in Mn/M<Subscript>x</Subscript>V<Subscript>1–x</Subscript>(001) (M = Fe,Nb) superlattices

This study is dedicated to the growth of bcc Mn by molecular beam epitaxy, in order to look at the magnetic properties of bcc Mn near room temperature. For this purpose, Mn is deposited on bcc M_xV_1-x(001) alloy lattices (M = Fe or Nb) for which the lattice spacing is tunable by varying the concentration x. We first show that the parameter of the M_xV_1-x alloy's buffer layers can be adjusted from 2.95 ? to 3.3 ? depending on x and M. Three different structures in Mn films grown on these buffer layers are observed depending on the in-plane spacing of the initial M_xV_1-x lattice. Thick Mn films are always found to grow epitaxially in the Mnstructure. For moderate thicknesses larger than 4 atomic planes, Mn grows in an unidentified structure. Finally, up to four deposited atomic planes, Mn is found to grow in a tetragonal structure close to a bcc one on Fe(001), Fe_xV_1-x(001) and Nb_xV_1-x(001) for . This tetragonal structure is shown to be a distorsion of a Mn bcc structure with . Except for ultra-thin Mn films deposited on Fe(001), no macroscopic magnetization is detected in our strained bcc Mn samples. These results are compared to theoretical predictions. Received 21 June 1999     

Influence of vacancies on the electronic structure of Co ZrSn Heusler alloys

The electronic structure of the Co_2-xZrSn Heusler alloys has been studied by X-ray photoelectron spectroscopy (XPS). XPS valence band spectra can be compared with ab initio electronic structure calculations using the linearized muffin-tin orbital (LMTO) method. The calculated magnetic moments per Co atom agree well with the moments obtained from experiment. The LMTO calculations also show the energy shifts of the Co, Zr and Sn valence electron states towards the Fermi level when the concentration of vacancies increases in these alloys. Received 9 March 1999 and Received in final form 6 May 1999     

Moment-volume instabilities in alloys with compositions around the C14 laves phase

We measured the thermal expansion and the specific heat of Ti_xFe_100-x alloys with x = 30.5, 32.5 and 35, all with hexagonal C14 laves phase structure (MgZn₂) like TiFe₂, and determine the temperature dependence of the magnetic contributions to the thermal expansion and the specific heat c_mag. For fixed composition and c mag ( T ) show the same type of behavior, demonstrating that both anomalies are of the same microscopic nature. They originate from moment-volume fluctuations (antiferromagnetic Invar-effect) as a comparison with total energy calculations as a function of atomic volume and moment for TiFe₂ reveals. Received: 26 January 1998 / Accepted: 17 April 1998     

FexMn1-x合金在GaAs(001)表面外延的结构和磁性

报道了对于0≤x≤1的Fe_xMn_1-x合金在GaAs(001)表面上分子束外延的结构与磁性的实验结果,当x>0.8时,Fe_xMn_1-x合金以单晶体心立方结构生长;当x<0.35时,则以单晶面心立方结构生长;对于0.35xMn_1-x生长的结构比较复杂,而正是在这一区域中,该合金发生了从铁磁相到反铁磁相的转变. 关键词：     

MAGNETIC PROPERTIES AND CRYSTALLIZATION OF THE RAPIDLY QUENCHED (Fe1-xNdx) 81.5B18.5 ALLOYS

Magnetic properties and crystallization behaviors of amorphous (Fe_1-xNd_x) _81.5B_18.5 alloys were studied. The crystallization temperature is found to rise at first and then drop monotonically with x, having a maximum value of 976K at x=0.11 (9at% Nd). The (Fe_1-xNd_x) _81.5B_18.5 alloys prepared at a quenching rate of v_s = 6.6m /s are amorphous, and exhibit good glass formability. Both the coercive field H_c and energy product (BH)_max depend strongly on Nd concentration. Amorphous (Fe_1-xNd_x) _81.5B_18.5 alloys with higher Nd concentration have a high coercive field at low temperature, due to the large random uniaxial anisotropy of Nd. The room-temperature H_c and (BH)_max obtained on optimal annealing con-ditions show two maxima as a function of Nd concentration x. The highest room-temperature coercive field H_c =22 kOe within the Nd concentrations around x=0.368 and the maximum energy product(RH)_max= 13.3 MG·Oe at x =0.055 are observed. The hard magnetic properties of these crystallized samples are related to the presence of the bard magnetic Nd₂Fe₁₄B phase.     

Band gaps and charge distribution in quasi-binary (GaSb) (InAs) crystals

Pseudopotential investigation of energy band gaps and charge distribution in quasi-binary (GaSb)_1-x(InAs)_x crystals has been reported. To the best of our knowledge, there had been no reported theoretical work on these materials. In agreement with experiment, the quasi-binary crystals of interest showed a significant narrowing of the optical band gap compared to the conventional Ga_xIn_1-xAs_ySb_1-y quaternary alloys (with x = 1 - y). Moreover, the absorption at the optical gaps indicated that (GaSb)_1-x(InAs)_x is a direct Γ to Γ band-gap semiconductor within a whole range of the x composition. The information derived from the present study predicts that the band gaps cross very important technological spectral regions and could be useful for thermophotovoltaic applications. Received 30 August 2002 Published online 1st April 2003 RID="a" ID="a"Present address: Physics Department, University of M'sila, 28000 M'sila, Algeria e-mail: N_Bouarissa@yahoo.fr     

Hardness anomalies on Cr 1−x Fe x (0.05<x<0.323) alloys: Mössbauer effect study

The hardness of Cr_1-xFe_x α solid solutions presents an anomalous behaviour in the range 0.10<xFe<0.30, that has been explained either by magnetic or electronic effects. In order to verify wether the anomalies were intrinsic to that phase or were induced by impurities, measurements of microhardness and isomer shift of samples of high purity Cr_1-xFe_x α solid solutions (0.05<xFe<0.323) were carried out. We found that the hardness presents a maximum and a minimum for xFe-0.19 and xFe-0.17, respectively, which are inferior to the amplitudes of the anomalies found by previous authors using lower purity alloys. Within the limit of experimental error, the isomer shift at room temperature varies linearly with the composition. These results suggest that impurities play a major role in determining the magnitude of the hardness anomalies and that electron transfer varies smoothly in the concentration range studied.     

Asymmetry and separation of spin tunneling time in ZnSe/Zn1-xMnxSe multilayers

We investigate characteristics of spin tunneling time in ZnSe/Ze_1-xMn_xSe multilayers under the influence of both an electric field and a magnetic field. The results indicate that the tunneling time shows complicated oscillations and significant spin separation for electrons with different spin orientations traversing semimagnetic semiconductor heterostructures. It is also shown that the tunneling time exhibits obvious asymmetry in opposite tunneling directions for electrons tunneling through asymmetric heterostructures, which mainly occurs in resonant regions. The degree of the asymmetry of the tunneling time is not only spin-polarization dependent but also external-field induced. Received 10 July 2001     

Size dependence of dielectric properties and structural metastability in ferroelectrics

The size effect of the dielectric properties and the barrier height was investigated in the ferroelectric solid solution Ba_xSr_1-xTiO₃ system. The decrease of the grain size causes the suppression of the ferroelectricity, and the increase of the relaxation frequency. Barrier heights increase with increasing grain size. The result is analogous to magnetic phase transitions in nanocrystals and other solid-solid phase transitions in nanocrystals. It suggests a general rule that may be of use in the discovery of new metastable phases. An explanation of this phenomenon was given by an electric potential model that agrees well with the experimental results. For Ba_xSr_1-xTiO₃ system, the decrease of xcauses the decrease of the barrier height. Received 3 August 1998 and Received in final form 22 November 1998     

Frequency dependence of aging, rejuvenation and memory in a disordered ferroelectric

We characterize in details the aging properties of the ferroelectric phase of KTa_1-xNb_x O₃ (KTN), where both rejuvenation and (partial) memory are observed. In particular, we carefully examine the frequency dependence of several quantities that characterize aging, rejuvenation and memory. We find a marked subaging behaviour, with an a.c. dielectric susceptiblity scaling as ω, where t _w is the waiting time. We suggest an interpretation in terms of pinned domain walls, much along the lines proposed for aging in a disordered ferromagnet, where both domain wall reconformations and overall (cumulative) domain growth are needed to rationalize the experimental findings. Received 10 November 2000 and Received in final form 20 February 2001     

Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction

We have studied the effect of the strain relaxation on the band-edge alignments in a Pt/p-Si_1-xGe_x Schottky junction with x=0.14 by internal photoemission spectroscopy and current–voltage measurements. We have shown that the variations in the band-edge alignments can be observed directly by measuring the optical and electrical properties of a simple Schottky junction. The strain in the Si_1-xGe_x layer has been partially relaxed by thermal treatments at two different temperatures. The degree of relaxation and other structural changes have been determined by a high-resolution X-ray diffractometer. Both optical and electrical techniques have shown that the barrier height of the Pt/Si_0.86Ge_0.14 junction increases with the amount of relaxation in the Si_1-xGe_x layer. This shows that the valence-band edge of the Si_1-xGe_x layer moves away from the Fermi level of the Pt/Si_1-xGe_x junction. The band-edge movement results from the increase in the band gap of the Si_1-xGe_x layer after the strain relaxation. This result agrees with the theoretical predictions for the strain-induced effects on the Si_1-xGe_x band structure. Received: 18 October 2000 / Accepted: 19 December 2000 / Published online: 23 March 2001     

Co1-xMnx合金电子结构和磁性的理论研究

Co_1-xMn_x合金的磁性强烈地依赖于其结构以及Mn的相对含量.从第一性原理出发,用线性缀加平面波(LAPW)方法,分别计算了x=0.00,0.25,0.50,0.75,1.00的情况下,面心立方(fcc)和体心立方(bcc)结构的Co_1-xMn_x合金的电子结构和基态磁性.随x的增大,fcc结构的Co_1-xMn_x合金的磁性从铁磁性和亚铁磁性变为反铁磁性;bcc结构Co相似文献