Cs2 23△1g态碰撞线归属和超精细结构解释

根据最新的Cs₂分子中间态A¹∑⁺_u -b³Πu全局解微扰获得的能级数据, 归属了通过微扰增强红外-红外光学双共振中间态A¹∑⁺_u 到上态2³△_1g的140条碰撞线, 包含之前实验观测到的221条2³△_1g←A¹∑⁺_u← X¹∑⁺_g 双共振跃迁[J. Chem. Phys. 128, 204313 (2008)], 重新计算了2³△_1g态的分子常数和势能曲线(排除54个微扰能级). 本次拟合得到的离心畸变常数和从经验公式计算得到的值相符合. 在亚多普勒激发光谱中,没有分辨出2³△_1g态的超精细结构. 对2³△_1g态的超精细结构进行初步计算,比较实验结果给出解释和说明.     

Cl2+离子R支跃迁光谱的理论研究

从双原子分子能级的物理表达式出发进行多次微分,建立了预测双原子分子体系R支高振转跃迁谱线的新解析公式. 使用新解析公式预测双原子体系R支高阶跃迁谱线的数据时,最多只需15条精确的实验跃迁谱线和该跃迁带中对应的上下 振动态的转动光谱常数B′_v 和 B″_v.将该解析公式用于预测Cl₂⁺ 离子 A²∏_u---X²∏_g跃迁系(3,7)带和(4,8)带的跃迁谱线,不仅精确的重复了实验给出的较低阶的跃迁光谱数据值, 而且正确预言了所研究体系中缺失的振转跃迁谱线,尤其是高阶的跃迁谱线数据.     

N2O+离子A2Σ+电子态高振动能级的转动结构分析

利用一束波长为36055nm的激光，通过(3+1)共振多光子电离方法制备纯净的且处于X²Π_1/2，3/2(000)态的N₂O⁺离子，用另一束激光激发所制备的离子到第一电子激发态A²Σ⁺的不同振动能级，然后解离，通过检测解离碎片NO⁺强度随光解光波长的变化，得到了转动分辨的N₂     

Yb3+:Gd2SiO5晶体的结构和光谱性能

采用提拉法成功生长尺寸为φ30 mm× 75 mm的15at.%Yb³⁺:Gd₂SiO₅单晶, 并用Reitveld全谱拟合方法确定了其晶格常数、原子坐标和温度因子等参数. 用吸收光谱计算了Yb³⁺离子²F_7/2↔ ²F_5/2能级跃迁的振子强度、谱线强度、跃迁概率、 能级寿命和积分发射截面等光谱参数, 并根据激光性能评估得出结论: 表明该晶体具有较大的阈值特性, 有望采用大功率激光二极管泵浦实现可调谐或超快激光输出.     

La2Zr2O7:Eu3+纳米棒的合成、表征及其荧光性能

采用传统固相法和水热法成功地制备出棒状La₂Zr₂O₇:Eu³⁺荧光粉. 利用X射线粉末衍射仪、透射电镜和荧光光谱仪等分析了产物的结构、形貌和发光特性. 结果表明红色荧光粉La₂Zr₂O₇:Eu³⁺有良好的晶相,属于立方结构,空间点群为Fd3m; 其形貌主要为纳米棒, 平均直径约47 nm, 长度为50～700 nm. 并对纳米棒的生长机理进行了探讨. 在466 nm蓝光激发下,La₂Zr₂O₇:Eu³⁺荧光粉能发射出Eu³⁺的特征红色荧光,发射主峰位于616 nm处,归属于Eu³⁺的⁵DO_→⁷F2_{超灵敏电偶极跃迁.此外,在产物的发射光谱中能够观察到⁵D}1_→⁷FJ _{(J=0, 1, 2)跃迁和⁵D}1_→⁷FJ _{(J=1, 2, 4)跃迁的劈裂峰,这说明Eu³⁺处在低对称性的晶体场格位中.}     

双共价因子在半磁半导体HgS:Co2+光谱中的应用

本文采用一种适用于共价晶体的含双共价因子(N_t≠N_e)的能量矩阵计算方法,研究了Co²⁺离子在HgS中的光学吸收谱,并对结果进行了讨论.研究结果表明,对于共价性强的晶体,Racah参量A对能级跃迁的贡献不能忽略.     

氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO₂层,在载玻片衬底上制备出了SnO₂/Ag/SnO₂多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10^-2 Ω^-1;此时,薄膜的电阻率为9.8×10^-5 Ω·cm,方电阻为9.68 Ω/sq,在400~800 nm可见光区的平均光学透射率达85%;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO₂层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10^-4 Ωcm,方电阻为12.05 Ω/sq.     

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction

In this paper, we propose the near-infrared p-type β-FeSi₂/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi₂) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi₂/4H-SiC detector, which consists of a p-type β-FeSi₂ absorption layer with a doping concentration of 1×10¹⁵ cm^-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi₂ side. The results illustrate that the β-FeSi₂/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.     

Cl+HN3产生NCl(a1Δ)和NCl(b1∑)的实验研究

 对利用微波放电直接解离Cl₂生成Cl, Cl与HN₃反应生成NCl(a^1Δ )和NCl(b^1∑)的过程进行了实验研究。得到了较强的NCl(a^1Δ 和NCl(b^1∑)自发辐射光谱,考察了Cl₂流量和He/Cl₂配比对NCl(a^1Δ 和NCl(b^1∑)生成的影响。发现对于一定的He流量,Cl₂流量对NCl(a^1Δ 和NCl(b^1∑)生成的影响存在一最佳范围,而最佳He/Cl₂配比不是一定值,而是随He流量升高而变大,在实验所考察的He流量范围（5~40 L/min）内,最佳He/Cl ₂配比在30∶1~100∶1之间。     

15N216O在1650-3450 cm-1的高分辨红外光谱

采用傅里叶变换红外光谱仪记录了富含¹⁵N₂¹⁶O同位素的一氧化二氮样品在1650-3450 cm^-1波段的高分辨振转光谱,得到了该同位素分子超过7300吸收谱线位置的实验值,经分析实验精确度好于5.0×10^-4 cm^-1. 基于有效哈密顿量模型预测和带带转动分析,确定了所有吸收线的归属;获得了29个新吸收带的振转光谱参数,并优化了其他44个吸收带的光谱参数值. 并且发现有效哈     

Band ordering in PbTe

Two possible conduction band orderings, I, L^-₆(L_2'), L^-₆(L_3'), L^-₄₅(L_3') and II, L^-₆(L_3'), L^-₄₅(L_3'), L^-₆(L_2') are considered for PbT e using the Empirical Pseudopotential method. Various properties (i.e. optical reflectivity temperature and pressure dependence of the band gap and effective masses) are considered for the two possible orderings.     

Effect of Band Nonparabolicity on the Inter Band Tunneling in Semiconductors

A simple yet generalized theory is developed to study inter band tunneling property of narrow band gap III–V compound semiconductors. The band structures of these low band gap semiconductors with sufficiently separated split-off valance band are usually described by the three energy band model of Kane, so this has been adopted here for the analysis of interband tunneling property in the case of InAs, InSb, and In_1-xGa_xAs_yP_1-y lattice matched to InP as representative direct band gap semiconductors having varied split-off valence band compared to their bulk state band gap energy. It has been found that the magnitude of tunneling rate from heavy hole decreases with increasing band nonparabolicity and the impact is more significant at high electric field in the three-band model of Kane than those with simple parabolic energy band approximations reflecting the direct influence of energy band parameters on inter band tunneling transitions. With proper consideration of band nonparabolicity, the results of the analysis of tunneling rate of these narrow gap materials show significant deviations from the results when simple parabolic band approximation is considered. The exact physical basis of the sources of deviation in the nonparabolic case from the corresponding parabolic band approximations is discussed in association to band coupling effect, transverse energy dependence, and the interplay between them. Moreover, under certain limiting conditions, our results reduce to the well-known results of parabolic band approximation and thus providing an indirect test to the accuracy of our generalized formulations.     

146Ce核的八级形变带和准γ带

通过测量²⁵²Cf自发裂变所产生的瞬发γ射线, 对¹⁴⁶Ce核的高自旋结构进行了重新研究, 结果更新了以前报道的能级纲图, 把八级形变集体带扩展到更高的自旋, 并且重新构建了可能的准γ带结构. 此外, 用反射不对称壳模型(RASM)对¹⁴⁶Ce核的八级形变带进行了计算, 低自旋处的计算结果与实验数据符合得很好.     

Band filters-spectrodividers

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 2, pp. 295–298, February, 1991.     

Band structures in 108In

High spin states in ¹⁰⁸In have been established upto ∼ 8 MeV in excitation energy and to a tentative spin of (23⁻). The data were obtained by in-beam γ-ray spectroscopy using the reaction ⁹³Nb(¹⁹F, p3n)¹⁰⁸In at a beam energy of 86 MeV. Four sequences of dipole bands and a normal rotational band of E2 γ-transitions have been placed in the level scheme. Received: 16 June 1998     

Band structure in104Ag

The level structure of¹⁰⁴Ag has been studied through the¹⁰³Rh (α, 3nγ) reaction at E_α=40 and 45 MeV. The principal features of the proposed level scheme are in agreement with those obtained earlier through heavy ion reaction. Two quasiparttcle-plus-rotor model calculation has been performed, and the results are compared with experimental data.     

Band structures in134Nd

The decay scheme for¹³⁴Nd has been extended to high spin and a new negative parity band discovered. These results are discussed in terms of particle alignments.     

Band structures in73Se

Excited states of⁷³Se have been investigated up to spin, 21/2 using techniques of in-beamγ-ray spectroscopy in connection with the⁷⁰Ge(α, n) reaction. Mean lifetimes of 12 levels have been determined applying Doppler-shift andγ-RF-methods. Five different bands have been identified that reflect a variety of different excitation modes. The decoupled 9/2⁺ band is likely to correspond to an oblate deformation while the 5/2⁺ band is interpreted as a strongly coupled prolate band built on the Nilsson configuration [422] 5/2⁺. The 3/2^? band is a strongly coupled band built on the [301] 3/2^} configuration.Nuclear reactions:⁷⁰Ge(α,n),E=14, 16, 18, 19, 20MeV; measuredE _γ,I _γ,σ(E _γ,θ),γγ-coin, linear polarization, DSA,γ(t).⁷⁵Se deduced levels,I, π, τ, δ(E2/M1), B(σλ). Enriched targets, Ge detectors.     

Band hybridization in rotational motion

The back-bending behaviour of the moment of inertia as a function of the square of the angular velocity, for the ground-, and ß-rotational trajectories in ₆₆¹⁵⁶Dy₉₀, is described in terms of band hybridization.